Table of Content

Content Page
Introduction 2
Characteristic of ETO 3
Application of ETO 3
Results 4
Conclusion 6
Reference 6

1. Introduction

1
High-power converters are increasingly used in drives for heavy-duty traction, power quality
management and magnetic energy storage systems. To meet the demand for advanced high
power semiconductor devices, renewed efforts have been made to improve a Gate Turn-off
Thyristor (GTO) oriented device in the past few years. Based on fundamental analysis
regarding the RBSOA and control of the GTO, The Emitter Turn-off Thyristor (ETO) is
developed.
ETO is a new high power semiconductor device which has the highest power level in
silicon power devices. It is major stride in the development of GTO technology based
superior high power semiconductor devices. It uses MOSFET to turn on and turn off the
device. With the technology nowadays, ETO is the combination of GTO and power MOSFET
that suitable for use in high-frequency and high-power converters.
As ETO is a hybrid combination device between p-n-p-n GTO and two n-channel
MOSFET with four terminals having anode, cathode, gate 1 and gate 2; so the gate MOSFET
Qg is connected to GTOs gate whereas the n-channel MOSFET Q c is in series with GTO
structure. Figure 1 (a) and (b) shows the basic structure of ETO and circuit symbol
respectively.

(a) (b)
Figure 1 ETO: (a) basic structure; (b) circuit symbol.

In this report, I will explain about the ETO V-I characteristics, the application of ETO
device and the result of graph which shows the input-output circuit for energizing ETO (V-I
characteristic) by using MATLAB Coding.

2. Characteristic of ETO

ETO has the combined advantages of both GTO and MOSFET as it has high voltage or
current ratings with low forward voltage drop, high switching speed, large RBSOA and small

2
voltage controlled turn-off capability. As we know, inside the ETO the GTO is connected in
series with the MOSFETs so when ETO is conducting current, the total current will go
through both the GTO and the MOSFETs. In this situation, the MOSFETs act as a small
linear resistor whose voltage drops is proportional to the current through it.
An injection current from gate 1 terminal can turn ON the ETO by keeping the gate
MOSFET Qg OFF and the series MOSFET Qc ON. When turning on Qg and turning off Qc,
the cathode current path of GTO that commutates with MOSFETs gate via GTOs gate is cut
off, and eventually commutates the ETO. It is called voltage-controlled process. However,
instead of external gate driver, GTO itself can turn off the current required by GTO. The
MOSFETs are not dependant on any high voltage but high voltage is applied on ETO.
When ETO is in OFF state, the applied voltage is blocked by the GTOs junction J 2,
which is reverse biased. The leakage current is bypassed by the gate MOSFET which is
switched ON. On the other hand, when ETO is ON state, the series of MOSFET is also in the
ON state and thus the gate MOSFET voltage cannot exceed the series MOSFET and the GTO
gate-cathode p-n junction forward voltage drop.

3. Application of ETO

Since ETO is based on recent technology of both GTO and power MOSFET, it provides
superior device to handle megawatt power applications. New generation ETO also has
features that built-in device voltage, current and temperature sensors and protection function.
Besides that, it can control power self-generation capability to remove external auxiliary
power supply system for control.
The ETO built-in current sensor is a low cost, high precision, and convenient to use
function. This function can be easily used for the current control purpose. The ETO can shut
down the fault over-current within a very short time due to its built-in current sensor, fast
switching speed, and high current turn off capability. The ETOs built-in current sensor and
over-current protection function can be used to improve the performance, and reliability, as
well as to reduce the cost of the high power electronics systems.

4. Results

Figure 2 (a) shows the V-I characteristic graph of ETO power device, theoretically while
Figure 2 (b) and 2 (c) shows the MATLAB Coding and its result respectively. From the
graph, the voltage-current characteristic is high because some part of current flows out from
GTOs gate while another part of current flows through the GTOs cathode terminal. The

3
reasons for high voltage capability are the blocking action at junction J 2 and there are two
transistors work in the active region instead of saturation region in the GTO structure.

Figure 2 (a) ETO forward V-I characteristic.

4
 (b)

(c)

Figure 2 ETO: (b) MATLAB Codes for I-V Characteristic; (c) simulation result when
Vgs = 200 V

5. Conclusion

Solid state power electronics technology plays an important roles in todays electric power
system and the demand for mega-watt level power ratings is increasing. The development of
megawatt power converters strongly depends on the power semiconductor technology, in the
development of the Emitter Turn-Off (ETO) Thyristor which is an emerging power
semiconductor switch for high power applications.
The ETO is a hybrid power semiconductor device that turns off the Gate Turn-off
Thyristor (GTO) under the unity turn-off gain condition. The unity gain for the devices turn-
off is realized with the combination of two independent MOSFET switches, thus avoiding the
usage of capacitors and thus lifting the temperature limitations of the IGCT concept. The

5
ETO also requires a low inductance and low resistance commutation path at the gate terminal,
leading to bulky driver stages comparable to the IGCTs.
Due to its fast switching speed, voltage control and built-in current sensing, it is
superior high power semiconductor device. However the ETO are still in experimental status
and are not introduced to the market yet. ETO based power electronics systems are very
attractive for various applications which are packed with advanced features as well as
superior performance.

6. Reference

Moorthi, V. R. (2005). Power electronics: Devices, circuits and industrial applications.

Delhi: Oxford University Press.
Huang, A., Liu, Y., Chen, Q., Li, J., & Song, W. (2009). Emitter turn-off (ETO) thyristor,
ETO light converter and their grid applications. 2009 IEEE Power & Energy Society General
Meeting. doi:10.1109/pes.2009.5275226