SAVEETHA UNIVERSITY

SAVEETHA COLLEGE OF ENGINEERING

EC 1301 Semiconductor Devices-II Year ECE A,B,C

NAME OF THE STAFF: S.ROJI MARJORIE

CHRISTEENA JOSEPH
R.PUVIARASI
UNIT I INTRODUCTION

PART A 2 MARKS QUESTIONS

1. Differentiate between insulators, conductors and semiconductors with the help of the
energy band diagram
2. Which electrons are mainly responsible for conduction and why?
3. What is the unit of measuring energy levels of electrons. Define it?
4. What is an energy band diagram. What are the different bands of the energy band
diagram. Explain each band?
5. Explain clearly about the conduction band.
6. What is work function
7. What is law of mass action?
8. Explain the term excess carriers in semiconductors
9. Explain the concept of electron-hole pair in semiconductors.
10. What is the energy required to break a covalent bond in Germanium and in Silicon.
11. What will be the relation between the number of electrons and holes in an intrinsic
semiconductor. Justify?
12. How does conduction occur in an intrinsic semiconductor. Explain.
13. What is Fermi level.
14. What is the position of Fermi level in an intrinsic semiconductor?
15. What is Fermi-Dirac distribution function?
16. With energy band diagrams explain the Fermi-Dirac distributions at T=0K, 300K and
1000K
17. What is current density. Give an expression for it.
18. Why are the n-type atoms called as donor impurities.
19. Draw the energy band diagram showing the donor energy level of n-type semiconductors.
20. Draw the crystal lattice structure of an n-type semiconductor.
21. Why are the p-type atoms called the acceptor impurities.
22. Draw the energy band diagram showing the acceptor energy level of p-type
semiconductors.
23. Draw the crystal lattice of a p- type semiconductor.
24. How does current flow occur by the diffusion mechanism
25. What is Volt equivalent of temperature.
26. Give an expression for the diffusion electron current density.
27. Give Einstein equation.
28. What is recombination
29. What is mean lifetime of a carrier?
30. What are recombination centers? Which metal is extensively used as a recombination
center?
31. How does conduction occur by the drift mechanism
PART B 16 MARKS QUESTIONS
1. Explain with crystal lattice structures how conduction occurs in an intrinsic
semiconductor.
2. Explain the variation of semiconductor parameters with temperature.
3. Derive expressions for the following
(a) Number of the electrons in the conduction band
(b) Number of holes in the valence band
(c) Fermi level in an in intrinsic semiconductor
(4) Explain with crystal lattice structures how conduction occurs in an n-type and p-type
semiconductor.
(5) (a) Explain how current flows by the diffusion mechanism.
(b) Derive the expression for Fermi level in an Extrinsic Semiconductor.
(6) (a)With necessary expressions explain the recombination process and carrier lifetime in
semiconductors
(b) Find the resistivity of intrinsic silicon when it is doped with a penta valent impurity of
1 impurity atom for each 60 million silicon atoms. Calculate the resistivity of doped
silicon. Let the no.of silicon atoms be 4.5x1028 /m3
(7) Derive an expression for the total current in a semiconductor
(8) Derive the continuity equation for various conditions of current and electric field

UNIT II - SEMICONDUCTOR THEORY & PN JUNCTION DIODES

PART A 2 MARKS QUESTIONS

1. What is meant by unbiased PN junction?

2. What is meant by depletion layer in unbiased PN junction?
3. Define forward static and dynamic resistances of diode.
4. Define diffusion capacitance and transition capacitance.
5. Compare the depletion regions in forward bias and reverse bias.
6. Draw the V-I characteristics of PN junction Diode.
7. Write down the expression for Diode Current.
8. How does the width of the depletion region of a p-n junction vary, if the reverse bias
applied to it increases?
9. Which biasing will make the resistance of p-n junction high?
10. The voltage across a silicon diode at room temperature of 300K is 0.71V when 2.5mA
current flows through it. If the voltage increases to 0.8V, calculate the new diode current.
11. Give the effects responsible for reverse breakdown.
12. What are the elements used in ideal diode model.
13. What is an ideal diode? Draw its characteristic.
14. List the various circuit models used for the diode.
15. Draw a basic series clipper circuit.
16. Define clipping region for basic parallel clipper with positive clipping.
17. What is forward resistance?
18. Distinguish hole and electron current.
19. Give the differences between forward and reverse bias.
20. What are the real time applications of diode?
.
21. Distinguish between clipper and a clamper.
22. Give the practical applications of clippers and clampers
23. What is the significance of barrier potential in a pn junction?
24. What are the breakdown mechanisms in a PN junction diode
25. Mention few applications of PN junction diode.

PART B 16 MARKS QUESTIONS

1. (i) Derive the diode current equation.
 (ii) A diode operating at 300K at a forward voltage of 0.4V carries a current of 10mA.
When voltage is changed to 0.42 V, the current becomes twice. Calculate the value of
reverse leakage current and emission coefficient for the diode.
2. (i) Explain about the V-I characteristics of the diode.
(ii) Explain about the effect of temperature on diode characteristics.
3. (a) Explain in detail the operation of PN junction diode under forward and reverse biased
condition.
(b) Explain the energy band diagram of the PN junction diode under open circuited condition.
4. Write a short notes on
(i) Series clippers
(ii) Parallel clippers
5. Explain in detail for a PN diode i)Dynamic resistance ii))Diffusion capacitance
6. Derive the expressions for

(i)Reverse saturation current (ii) Transition capacitance

(7) Write a short notes on
(i) Positive clampers
(ii) Negative clampers

UNIT III - BIPOLAR JUNCTION TRANSISTORS

PART A 2 MARKS QUESTIONS

1. What is a Bipolar junction Transistor? How are its terminals named?

2. What do you mean by early effect? What are its consequences?
3. Derive the relationship between and .
4. What are the types of breakdown in transistors?
5. Define , and of a transistor. Show how they are related to each other.
6. Define avalanche breakdown
7. Define reach through or punch through
8. A transistor has =100. If the collector current is 40mA, find the value of emitter current.
9. What do you mean by current amplification factor? Write it expression in CE, CB and CC
values.
10. What are the types of transistor configuration?
11. What do you mean by transistor biasing?
12. What are the transistor parameters?
13. Draw the structure of PNP and NPN transistors.
14. Calculate IC and IE for a transistor that has ,=0.98 and IB=100A .Determine the value of
dc for the transistor [Ans= IC=4.9mA, IE = 5mA dc=49
15. Why are transistors called bipolar devices?
16. Calculate dc and dc for the transistor if IC is measured as 1mA and IB is 25 A.
Determine the base current to give IC=5mA
17. What are the applications of transistors?
18. Plot the two lines of CE transistor output characteristics from the following quantities
a. For IB is 25 A. IC=5mA when VCE=1V
IC=1.75mA when VCE=12V
b. For IB is 50 A. IC=3mA when VCE=1V
IC=3.5mA when VCE=12V
19. Calculate dc and IB for the transistor if IC equal to 2.5mA and IE is 2.55 mA. Determine
dc for the transistor.
20. What are the different modes of operation of transistors?
21. What are the characteristics of a transistor?
22. Draw the symbols of PNP and NPN transistors and label the terminals and conventional
direction of current.
23. Mention the various current components in a BJT.
24. What is thermal runaway?
25. Why is the transistor called a current controlled device?
26. When does a transistor act as a switch?

PART B 16 MARKS QUESTIONS

1. Explain in detail the construction, operation of the NPN and PNP transistors and hence
derive the transistor equation.
2. Write short notes on i) Early effect ii) Transistor breakdown
3. What are the types of transistor configuration? Explain in detail the operation and input
and output characteristics of Common Base configuration of transistors.
4. Explain in detail the operation and input and output characteristics of Common Emitter
configuration of transistors.
 5. Explain in detail the operation and input and output characteristics of Common collector
configuration of transistors
6. Explain in detail the different modes of operation of transistors?
7. Write short notes on i)Transistors parameters ii) Current components in a BJT

UNIT IV - FET & UJT

PART A 2 MARKS QUESTIONS

1. What is a FET? What are its types?

2. Draw the symbols of P channel and N channel FETs and label the terminals.
3. Why are FETs called unipolar devices?
4. What are the applications of FETs?
5. What are the differences between FETs and Transistors?
6. What do you mean by pinch off voltage?
7. Draw the drain characteristics of JFET and label the regions.
8. What are the advantages of FET?
9. Differentiate between depletion mode and enhancement mode MOSFET.
10. What are breakdown devices? Mention few examples of breakdown devices.
11. Why are breakdown devices called latching devices?
12. What do you mean by Interbase Resistance of a UJT?
13. What do you mean by UJT relaxation transistor?
14. A given silicon UJT has an inter base resistance of 10K. It has RB1=6K wit IE=0.Find
a. UJT current if VBB=20V and VE is less than VP
b. and VA
c. peak point voltage Vp
15. What are the applications of UJT?
16. Mention the characteristic parameters of the JFET
17. What are the precautions necessary to protect MOSFETs?
18. What are the advantages of MOSFETs compared to JFET?
19. Define drain resistance.
20. How can FET be used as a voltage controlled resistors?
21. Draw the low frequency equivalent circuit of JFET
22. What are the parameters that control the Pinch off voltage?
23. Give the drain current equation of JFET
24. Give the expression for peak point voltage for UJT?
 25. What is meant by negative resistance region of UJT?
26. Why MOSFET is called IGFET?
27. Why is the input impedance of FET very high?
28. Why E-MOSFET is called normally off MOSFET

PART B 16 MARKS QUESTIONS

1. Using neat sketches explain the operation of Depletion and enhancement MOSFET with
their characteristics.
2. Explain the construction, operation, equivalent circuit, volt ampere characteristics, and
application of UJT.
3. Explain the operation and characteristics of JFET with the help of neat sketches.
4. Write short notes on i) Programmable UJT ii) UJT Relaxation Oscillator
5. Draw and explain the equivalent circuit of FET at low frequencies and at high
frequencies
6. Write shot notes on
a. small signal JFET parameters
b. Handling precautions for MOSFET
c. FET applications and Advantages

UNIT V - SPECIAL SEMICONDUCTOR DEVICES

PART A 2 MARKS QUESTIONS

1. Explain the breakdown action in Zener diode

2. Compare zener and avalanche breakdown
3. List the applications of zener diode
4. Explain the term tunneling.
5. What is valley point?
6. Draw the V-I characteristics and show the negative resistance region for the tunnel diode
7. What is a varactor diode?
8. How is a zener diode different from a conventional diode?
9. Show how a zener diode can be used as a voltage regulator.
10. Give the comparison between PIN diode and P-N junction general purpose diode.
11. State the applications of schottky diodes.
12. SCR consists of 3 junctions. justify the statement.
13. Draw the symbol, construction structure, characteristics of an SCR.
14. What are the methods used for triggering the SCR.
15. Explain the term Latching .
16. Give the applications of SCR
17. Distinguish between a DIAC and a TRIAC
18. List the applications of UJT
19. Give the principal and working of LED.
20. List the advantages and disadvantages of LCD
21. What are the applications of LED?
22. What is an optocoupler?
23. Why the reverse recovery time of the schottky diode is is zero?
24. Draw the characteristics of Shockley diode
25. Match the following.
a. Tunnel diode Regulated power supplies
b. PIN Diode FM modulation

c. LED Relaxation oscillator

d. DIAC pulse and phase shifter
e. Varactor diode Triggering of TRIAC
f. SCR Saw tooth generators
g. UJT image sensing circuits

PART B 16 MARKS QUESTIONS

1. Draw and explain the V-I Characteristics of a Zener diode. What are the two breakdown
mechanisms in a zener diode? Give the applications of zener diode.
2. Explain the principle of a varactor diode along with its characteristics and symbol. State
its applications
3. Explain the working principle & characteristics of tunnel diode.
4. Explain the structure, characteristics and applications of Schottky diode.
5. Explain the working and characteristics of SCR and its applications.
6. Write short notes on LED, LCD and CCD
7. Briefly explain the following.
a. DIAC
b. TRIAC
c. Photo diodes