Product Profile: 60 V, 360 Ma N-Channel Trench MOSFET

2N7002P
60 V, 360 mA N-channel Trench MOSFET

Rev. 02 29 July 2010 Product data sheet
1. Product profile
1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits

AEC-Q101 qualified Trench MOSFET technology
Logic-level compatible Very fast switching
1.3 Applications
High-speed line driver Relay driver
Low-side loadswitch Switching circuits
1.4 Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source Tamb = 25 C - - 60 V
voltage
VGS gate-source -20 - 20 V
voltage
ID drain current VGS = 10 V; Tamb = 25 C [1] - - 360 mA
Static characteristics
RDSon drain-source VGS = 10 V; ID = 500 mA; - 1 1.6
on-state Tj = 25 C; pulsed; tp 300 s;
resistance 0.01
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors 2N7002P
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
3 D
2 S source
3 D drain
G
1 2
SOT23 (TO-236AB) mbb076 S
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
2N7002P TO-236AB plastic surface-mounted package; 3 leads SOT23
4. Marking
Table 4. Marking codes
Type number Marking code[1]
2N7002P LW%
[1] % = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tamb = 25 C - 60 V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tamb = 25 C [1] - 360 mA
VGS = 10 V; Tamb = 100 C [1] - 280 mA
IDM peak drain current Tamb = 25 C; single pulse; tp 10 s - 1.2 A
Ptot total power dissipation Tamb = 25 C [2] - 350 mW
[1] - 420 mW
Tsp = 25 C - 1140 mW
Tj junction temperature - 150 C
Tamb ambient temperature -55 150 C
Tstg storage temperature -65 150 C
Source-drain diode
IS source current Tamb = 25 C [1] - 360 mA
2N7002P All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 29 July 2010 2 of 15

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa001 017aaa002
120 120
Pder Ider
(%) (%)
80 80
40 40
0 0
75 25 25 75 125 175 75 25 25 75 125 175
Tamb (C) Tamb (C)
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a
function of ambient temperature function of ambient temperature
017aaa014
10
ID
(A)
1
(1)
(2)
101
(3)
(4)
(5)
102
(6)
103
101 1 10 102
VDS (V)
IDM = single pulse

(1) tp = 100 s
(2) tp = 1 ms
(3) tp = 10 ms
(4) tp = 100 ms
(5) DC; Tsp = 25 C
(6) DC; Tamb = 25 C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage

6. Thermal characteristics
Table 6. Thermal characteristics
Rth(j-a) thermal resistance in free air [1] - 310 370 K/W
from junction to [2] - 260 300 K/W
ambient
Rth(j-sp) thermal resistance - - 115 K/W
from junction to solder
point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa015
103
Zth(j-a) duty cycle = 1

(K/W) 0.75
0.5
0.33
102 0.25
0.2
0.1 0.05
0.02
10 0.01
0
1
103 102 101 1 10 102 103
tp (s)
FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa016
103
Zth(j-a)
duty cycle = 1
(K/W)
0.75
0.5
102 0.33
0.25
0.2
0.1 0.05
0 0.02
10 0.01
1
103 102 101 1 10 102 103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

7. Characteristics
Table 7. Characteristics
Static characteristics
V(BR)DSS drain-source ID = 10 A; VGS = 0 V; Tj = 25 C 60 - - V
breakdown voltage
VGSth gate-source threshold ID = 250 A; VDS = VGS; Tj = 25 C 1.1 1.75 2.4 V
voltage
IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 C - - 1 A
VDS = 60 V; VGS = 0 V; Tj = 150 C - - 10 A
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 C - - 100 nA
VGS = -20 V; VDS = 0 V; Tj = 25 C - - 100 nA
RDSon drain-source on-state VGS = 5 V; ID = 50 mA; pulsed; - 1.3 2
resistance tp 300 s; 0.01 ; Tj = 25 C
VGS = 10 V; ID = 500 mA; pulsed; - 1 1.6
tp 300 s; 0.01 ; Tj = 25 C
gfs forward VDS = 10 V; ID = 200 mA; pulsed; - 400 - mS
transconductance tp 300 s; 0.01 ; Tj = 25 C
Dynamic characteristics
QG(tot) total gate charge ID = 300 mA; VDS = 30 V; VGS = 4.5 V; - 0.6 0.8 nC
QGS gate-source charge Tj = 25 C - 0.2 - nC
QGD gate-drain charge - 0.2 - nC
Ciss input capacitance VGS = 0 V; VDS = 10 V; f = 1 MHz; - 30 50 pF
Coss output capacitance Tj = 25 C - 7 - pF
Crss reverse transfer - 4 - pF
capacitance
td(on) turn-on delay time VDS = 50 V; RL = 250 ; VGS = 10 V; - 3 6 ns
tr rise time RG(ext) = 6 ; Tj = 25 C - 4 - ns
td(off) turn-off delay time - 10 20 ns
tf fall time - 5 - ns
Source-drain diode
VSD source-drain voltage IS = 115 mA; VGS = 0 V; Tj = 25 C 0.47 0.75 1.1 V

017aaa017 017aaa018
0.7 103
ID VGS = 4.0 V
(A) 3.5 V
0.6 ID
(A)
0.5
104
3.25 V
(1) (2) (3)
0.4
0.3 3.0 V
105
0.2
2.75 V
0.1
2.5 V
0.0 106
0.0 1.0 2.0 3.0 4.0 0 1 2 3
VDS (V) VGS (V)
Tamb = 25 C Tamb = 25 C; VDS = 5 V

(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a Fig 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values gate-source voltage
017aaa019 017aaa020
10.0 6.0
RDSon
() RDSon
(1)
()
7.5
(2)
4.0
5.0
(1)
2.0
2.5
(2)
(3)
(4)
(5)
0.0 0.0
0.0 0.2 0.4 0.6 0.8 1.0 0.0 2.0 4.0 6.0 8.0 10.0
ID (A) VGS (V)
Tamb = 25 C ID = 500 mA
(1) VGS = 3.25 V (1) Tamb = 150 C
(2) VGS = 3.5 V (2) Tamb = 25 C
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
Fig 8. Drain-source on-state resistance as a function Fig 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values

017aaa021 017aaa022
1.0 2.4
ID
a
(A)
0.8
(1) (2) 1.8
0.6
1.2
0.4
0.6
0.2
(2) (1)
0.0 0.0
0.0 1.0 2.0 3.0 4.0 5.0 60 0 60 120 180
VGS (V) Tamb (C)
VDS > ID RDSon

(1) Tamb = 25 C
(2) Tamb = 150 C
Fig 10. Transfer characteristics: drain current as a Fig 11. Normalized drain-source on-state resistance as
function of gate-source voltage; typical values a function of ambient temperature; typical
values
017aaa023 017aaa024
3.0 102
VGS(th)
(V) (1) (1)
C
(pF)
2.0
(2) (2)
10
(3)
(3)
1.0
0.0 1
60 0 60 120 180 101 1 10 102
Tamb (C) VDS (V)
ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V

(1) maximum values (1) Ciss
(2) typical values (2) Coss
(3) minimum values (3) Crss
Fig 12. Gate-source threshold voltage as a function of Fig 13. Input, output and reverse transfer capacitances
ambient temperature as a function of drain-source voltage; typical
values

017aaa025
5.0
VDS
VGS
(V)
4.0 ID
VGS(pl)
3.0
VGS(th)
2.0 VGS
QGS1 QGS2
QGS QGD
1.0
QG(tot)
003aaa508
0.0
0.0 0.2 0.4 0.6 0.8
QG (nC)
ID = 300 mA; VDS = 30 V; Tamb = 25 C

Fig 14. Gate-source voltage as a function of gate Fig 15. Gate charge waveform definitions
charge; typical values
017aaa026
1.2
IS
(A)
0.8
(1) (2)
0.4
0.0
0.0 0.4 0.8 1.2
VSD (V)
VGS = 0 V
(1) Tamb = 150 C
(2) Tamb = 25 C
Fig 16. Source current as a function of source-drain voltage; typical values

8. Test information
P t1
duty cycle =
t2 t2
t1
t
006aaa812
Fig 17. Duty cycle definition

9. Package outline
Plastic surface-mounted package; 3 leads SOT23
D B E A X
HE v M A
A1
1 2 c
e1 bp w M B Lp
e
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)

A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
04-11-04
SOT23 TO-236AB
06-03-16
Fig 18. Package outline SOT23 (TO-236AB)

10. Soldering
3.3
2.9
1.9
solder lands
solder resist
3 1.7 2
solder paste
0.7 0.6 occupied area

(3) (3)
Dimensions in mm
0.5
(3)
0.6
(3)
1 sot023_fr
Fig 19. Reflow soldering footprint for SOT23 (TO-236AB)
2.2
1.2
(2)
1.4
(2)
solder lands
4.6 2.6 solder resist
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5 sot023_fw
Fig 20. Wave soldering footprint for SOT23 (TO-236AB)

11. Revision history

Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
2N7002P v.2 20100729 Product data sheet - 2N7002P_1
Modifications: Correction of thermal values.
Correction of various characteristics values including related graphs.
2N7002P_1 20100419 Product data sheet - -

12. Legal information
12.1 Data sheet status

Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions Suitability for use NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
Draft The document is a draft version only. The content is still under safety-critical systems or equipment, nor in applications where failure or
internal review and subject to formal approval, which may result in malfunction of an NXP Semiconductors product can reasonably be expected
modifications or additions. NXP Semiconductors does not give any to result in personal injury, death or severe property or environmental
representations or warranties as to the accuracy or completeness of damage. NXP Semiconductors accepts no liability for inclusion and/or use of
information included herein and shall have no liability for the consequences of NXP Semiconductors products in such equipment or applications and
use of such information. therefore such inclusion and/or use is at the customers own risk.
Short data sheet A short data sheet is an extract from a full data sheet Applications Applications that are described herein for any of these
with the same product type number(s) and title. A short data sheet is intended products are for illustrative purposes only. NXP Semiconductors makes no
for quick reference only and should not be relied upon to contain detailed and representation or warranty that such applications will be suitable for the
full information. For detailed and full information see the relevant full data specified use without further testing or modification.
sheet, which is available on request via the local NXP Semiconductors sales
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Limited warranty and liability Information in this document is believed to testing for the customers applications and products using NXP
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Limiting values Stress above one or more limiting values (as defined in
In no event shall NXP Semiconductors be liable for any indirect, incidental, the Absolute Maximum Ratings System of IEC 60134) will cause permanent
punitive, special or consequential damages (including - without limitation - lost damage to the device. Limiting values are stress ratings only and (proper)
profits, lost savings, business interruption, costs related to the removal or operation of the device at these or any other conditions above those given in
replacement of any products or rework charges) whether or not such the Recommended operating conditions section (if present) or the
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Notwithstanding any damages that customer might incur for any reason
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notice. This document supersedes and replaces all information supplied prior purchase of NXP Semiconductors products by customer.
to the publication hereof.

No offer to sell or license Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,
12.4 Trademarks
conveyance or implication of any license under any copyrights, patents or Notice: All referenced brands, product names, service names and trademarks
other industrial or intellectual property rights. are the property of their respective owners.
Export control This document as well as the item(s) described herein may Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
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QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
Quick reference data The Quick reference data is an extract of the TrenchMOS, TriMedia and UCODE are trademarks of NXP B.V.
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding. HD Radio and HD Radio logo are trademarks of iBiquity Digital
Corporation.
13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
13 Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section Legal information.
NXP B.V. 2010. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 July 2010
Document identifier: 2N7002P

Product Profile: 60 V, 360 Ma N-Channel Trench MOSFET

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2N7002P

60 V, 360 mA N-channel Trench MOSFET

1.1 General description

1.2 Features and benefits

1.4 Quick reference data

SOT23 (TO-236AB) mbb076 S

Product data sheet Rev. 02 29 July 2010 2 of 15

IDM = single pulse

Product data sheet Rev. 02 29 July 2010 3 of 15

Zth(j-a) duty cycle = 1

FR4 PCB, standard footprint

FR4 PCB, mounting pad for drain 1 cm2

Product data sheet Rev. 02 29 July 2010 4 of 15

Product data sheet Rev. 02 29 July 2010 5 of 15

Tamb = 25 C Tamb = 25 C; VDS = 5 V

Product data sheet Rev. 02 29 July 2010 6 of 15

VDS > ID RDSon

ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V

Product data sheet Rev. 02 29 July 2010 7 of 15

ID = 300 mA; VDS = 30 V; Tamb = 25 C

Product data sheet Rev. 02 29 July 2010 8 of 15

Fig 17. Duty cycle definition

Product data sheet Rev. 02 29 July 2010 9 of 15

Plastic surface-mounted package; 3 leads SOT23

DIMENSIONS (mm are the original dimensions)

OUTLINE REFERENCES EUROPEAN

Fig 18. Package outline SOT23 (TO-236AB)

Product data sheet Rev. 02 29 July 2010 10 of 15

0.7 0.6 occupied area

Fig 19. Reflow soldering footprint for SOT23 (TO-236AB)

4.6 2.6 solder resist

preferred transport direction during soldering

Fig 20. Wave soldering footprint for SOT23 (TO-236AB)

Product data sheet Rev. 02 29 July 2010 11 of 15

11. Revision history

Product data sheet Rev. 02 29 July 2010 12 of 15

12. Legal information

12.1 Data sheet status

Product data sheet Rev. 02 29 July 2010 13 of 15

No offer to sell or license Nothing in this document may be interpreted or

13. Contact information

For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 02 29 July 2010 14 of 15

NXP B.V. 2010. All rights reserved.

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