TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/394

DEVICES LEVELS

2N4150 2N5237 2N5238 JAN

2N4150S 2N5237S 2N5238S JANTX
JANTXV
JANS

ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted)

2N4150 2N5237 2N5238

Parameters / Test Conditions Symbol Unit
2N4150S 2N5237S 2N5238S
Collector-Emitter Voltage VCEO 70 120 170 Vdc
Collector-Base Voltage VCBO 100 150 200 Vdc
Emitter-Base Voltage VEBO 10 Vdc
Collector Current IC 10 Adc
(1)
Total Power Dissipation @ TA = +25C 1.0
PT W
@ TC = +25C (2) 15
Operating & Storage Junction Temperature Range Tj , Tstg -65 to +200 C
Thermal Resistance, Junction-to Case RJC 10 TO-5
C/W 2N4150, 2N5237, 2N5238
Junction- to Ambient RJA 175
1) Derate linearly @ 5.7mW/C for TA > +25C
2) Derate linearly @ 100mW/C for TC > +25C
ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 0.1mAdc 2N4150, 2N4150S 70
2N5237, 2N5237S V(BR)CEO 120 Vdc
2N5238, 2N5238S 170

Collector-Emitter Cutoff Current

VBE = 0.5Vdc, VCE = 60Vdc 2N4150, 2N4150S 10
VBE = 0.5Vdc, VCE = 110Vdc 2N5237, 2N5237S ICEX 10 Adc
VBE = 0.5Vdc, VCE = 160Vdc 2N5238, 2N5238S 10
TO-39
Collector-Emitter Cutoff Current (TO-205AD)
VCE = 60Vdc 2N4150, 2N4150S 10 2N4150S, 2N5237S, 2N5238S
VCE = 110Vdc 2N5237, 2N5237S ICEO 10 Adc
VCE = 160Vdc 2N5238, 2N5238S 10

Emitter-Base Cutoff Current

10
VEB = 7.0Vdc IEBO Adc
0.1
VEB = 5.0Vdc

T4-LDS-0014 Rev. 4 (082192) Page 1 of 2

 TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/394

ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) (CONT.)

Parameters / Test Conditions Symbol Min. Max. Unit

Collector-Base Cutoff Current
VCB = 100Vdc 2N4150, 2N4150S 10
VCB = 150Vdc 2N5237, 2N5237S ICBO 10 Adc
VCB = 200Vdc 2N5238, 2N5238S 10
VCB = 80Vdc All Types 0.1
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0Adc, VCE = 5.0Vdc 2N4150, 2N4150S 50 200
2N5237, 2N5237S 50 225
2N5238, 2N5238S hFE 50 225
IC = 5.0Adc, VCE = 5.0Vdc All Types 40 120
IC = 10Adc, VCE = 5.0Vdc All Types 10 -
Collector-Emitter Saturation Voltage
IC = 5.0Adc, IB = 0.5Adc VCE(sat) 0.6 Vdc
IC = 10Adc, IB = 1.0Adc 2.5
Base-Emitter Saturation Voltage
IC = 5.0Adc, IB = 0.5Adc VBE(sat) 1.5 Vdc
IC = 10Adc, IB = 1.0Adc 25
DYNAMIC CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio |hfe| 1.5 7.5
IC = 0.2Adc, VCE = 10Vdc, f = 10MHz

Forward Current Transfer Ratio

IC = 50mAdc, VCE = 5.0V, f = 1.0kHz 2N4150, 2N4150S hfe 40 160
2N5237, 2N5237S 40 160
2N5238, 2N5238S 40 250
Output Capacitance
Cobo 350 pF
VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz

SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Delay Time VCC = 20Vdc, VBB = 5.0Vdc td 50 ns
Rise Time IC = 5.0Adc, IB1 = 0.5Adc tr 500 ns
Storage Time VCC = 20Vdc, VBB = 5.0Vdc ts 1.5 s
Fall Time IC = 5.0Adc, IB1 = -IB2 = -0.5Adc tf 500 ns
SAFE OPERATING AREA
DC Tests
TC = +25C, 1 Cycle, t = 1.0s
Test 1
VCE = 40Vdc, IC = 0.22Adc
Test 2
VCE = 70Vdc, IC = 90mAdc
Test 3
VCE = 120Vdc, IC = 15mAdc 2N5237, 2N5237S
VCE = 170Vdc, IC = 3.5mAdc 2N5238, 2N5238S
(3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%
T4-LDS-0014 Rev. 4 (082192) Page 2 of 2
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Microsemi:
JANTX2N4150S JANTXV2N5237S 2N4150 Jantx2N5237 JAN2N5237 Jantxv2N5237 2N5237S 2N5238S
JAN2N5237S Jantxv2N4150 2N4150S JANTX2N5237S 2N5237 JANTX2N4150 JAN2N4150 JAN2N4150S
Jantx2N5238 JANTX2N5238S 2N5238 JAN2N5238 JANTXV2N5238S JANTXV2N4150S JAN2N5238S
Jantxv2N5238