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N-Channel
30V/8A,
RDS(ON) = 20m (typ.) @ VGS = 10V
RDS(ON) = 30m (typ.) @ VGS = 4.5V
P-Channel
Top View of DIP 8
-30V/-7A,
RDS(ON) = 40m (typ.) @ VGS = -10V
RDS(ON) = 62m (typ.) @ VGS = -4.5V D1 D1 S2
G1
Applications
S1 D2 D2
Power Management in Notebook Computer,
Portable Equipment and Battery Powered N-Channel P-Channel
Systems
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM4550J
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static Characteristics
Drain-Source Breakdown VGS=0V, IDS=250A N-Ch 30
BVDSS V
Voltage VGS=0V, IDS=-250A P-Ch -30
VDS=24V, VGS=0V 1
N-Ch
Zero Gate Voltage Drain TJ=85C 30
IDSS A
Current VDS=-24V, VGS=0V -1
P-Ch
TJ=85C -30
VDS=VGS, IDS=250A N-Ch 1 1.5 2
VGS(th) Gate Threshold Voltage V
VDS=VGS, IDS=-250A P-Ch -1 -1.5 -2
N-Ch 100
IGSS Gate Leakage Current VGS=20V, VDS=0V nA
P-Ch 100
VGS=10V, IDS=8A N-Ch 20 27.5
APM4550J
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Diode Characteristics
a ISD=2.5A, V GS=0V N-Ch 0.8 1.3
VSD Diode Forward Voltage V
ISD=-2A, V GS=0V P-Ch -0.8 -1.3
N-Channel N-Ch 16
trr Reverse Recovery Time ns
ISD=8A, dlSD/dt=100A/s P-Ch 15
Reverse Recovery N-Channel N-Ch 9
Q rr nC
Charge ISD=-7A, dlSD/dt=100A/s P-Ch 6
b
Dynamic Characteristics
N-Ch 2
RG Gate Resistance VGS=0V,V DS=0V,F=1MHz
P-Ch 8.3
N-Channel N-Ch 620
C iss Input Capacitance VGS=0V,
VDS=15V, P-Ch 600
Frequency=1.0MHz N-Ch 90
C oss Output Capacitance pF
P-Channel P-Ch 100
VGS=0V, N-Ch 70
Reverse Transfer VDS=-15V,
C rss
Capacitance Frequency=1.0MHz P-Ch 75
N-Ch 6 11
td(ON) Turn-on Delay Time N-Channel
VDD=15V, R L=15, P-Ch 8 14
IDS=1A, V GEN=10V, N-Ch 10 18
Tr Turn-on Rise Time R G=6
P-Ch 12 22
ns
N-Ch 22 40
td(OFF) Turn-off Delay Time P-Channel
VDD=-15V, R L=15, P-Ch 27 50
IDS=-1A, V GEN=-10V, N-Ch 3 6
Tf Turn-off Fall Time R G=6
P-Ch 14 25
b
Gate Charge Characteristics
N-Channel N-Ch 14 19
Qg Total Gate Charge
VDS=15V, V GS=10V, P-Ch 12 16
IDS=8A
N-Ch 1.3
Q gs Gate-Source Charge nC
P-Channel P-Ch 1.1
VDS=-15V, V GS=-10V,
IDS=-7A N-Ch 3.2
Q gd Gate-Drain Charge
P-Ch 2.8
Notes:
a : Pulse test ; pulse width 300s, duty cycle 2%.
b : Guaranteed by design, not subject to production testing.
Typical Characteristics
N-Channel
Power Dissipation Drain Current
3.0 10
2.5
8
1.5
4
1.0
2
0.5
o o
TA=25 C TA=25 C,VG=10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
1 Duty = 0.5
0.2
it
Lim
10
ID - Drain Current (A)
0.1
n)
s(o
Rd
0.05
300s 0.1
0.02
1ms
1 0.01
10ms
100ms
Single Pulse
1s 0.01
0.1
DC
2
Mounted on 1in pad
O
TA=25 C o
RJA : 50 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30
VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)
35
18
30
15 3.5V
25
12 VGS=10V
20
9
6 3V 15
3 10
2.5V
0 5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30
40 1.2
35 1.0
30 0.8
25 0.6
20 0.4
15 0.2
10 0.0
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
10
o
1.50 Tj=150 C
1.00 o
Tj=25 C
1
0.75
0.50
0.25
o
RON@Tj=25 C: 20m
0.00 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
700 8
7
C - Capacitance (pF)
Ciss
600
6
500
5
400
4
300
3
200
2
Coss
100 1
Crss
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14
7
2.5
1.5 4
3
1.0
2
0.5
1
o o
TA=25 C TA=25 C,VG=-10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
1 Duty = 0.5
0.2
it
Lim
10
-ID - Drain Current (A)
0.1
n)
s(o
Rd
0.05
300s 0.1
1ms 0.02
1
0.01
10ms
100ms
Single Pulse
0.01
1s
0.1
DC
2
Mounted on 1in pad
O o
TA=25 C RJA : 50 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30
-VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)
-4V 70
18
60
15 -3.5V
50 VGS=-10V
12
40
9 -3V
30
6
-2.5V 20
3
0 10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30
80 1.2
70 1.0
60 0.8
50 0.6
40 0.4
30 0.2
20 0.0
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
1.6
1.2 o
Tj=25 C
1.0 1
0.8
0.6
0.4
o
RON@Tj=25 C: 40m
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
8
600 Ciss
7
C - Capacitance (pF)
500
6
400 5
4
300
3
200
2
Coss
100
Crss 1
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12
Package Information
DIP-8
D
E1
E
A2
0.38
A1
D1 b e c eA
b2 eB
S DIP-8
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 5.33 0.210
A1 0.38 0.015
A2 2.92 4.95 0.115 0.195
b 0.36 0.56 0.014 0.022
b2 1.14 1.78 0.045 0.070
c 0.20 0.35 0.008 0.014
D 9.01 10.16 0.355 0.400
D1 0.13 0.005
E 7.62 8.26 0.300 0.325
E1 6.10 7.11 0.240 0.280
e 2.54 BSC 0.100 BSC
eA 7.62 BSC 0.300 BSC
eB 10.92 0.430
L 2.92 3.81 0.115 0.150
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
TP tp
Critical Zone
T L to T P
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
Ramp-down
ts
Preheat
t 25 C to Peak
25
Tim e
Classification Reflow Profiles
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
3C/second max. 3C/second max.
(TL to TP)
Preheat
100C 150C
- Temperature Min (Tsmin)
150C 200C
- Temperature Max (Tsmax)
60-120 seconds 60-180 seconds
- Time (min to max) (ts)
Time maintained above:
183C 217C
- Temperature (TL)
60-150 seconds 60-150 seconds
- Time (tL)
Peak/Classification Temperature (Tp) See table 1 See table 2
Time within 5C of actual
10-30 seconds 20-40 seconds
Peak Temperature (tp)
Ramp-down Rate 6C/second max. 6C/second max.
Time 25C to Peak Temperature 6 minutes max. 8 minutes max.
Notes: All temperatures refer to topside of the package. Measured on the body surface.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pao Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369