Nov 2002

AO4604
Complementary Enhancement Mode Field Effect Transistor

General Description Features

n-channel p-channel
The AO4604 uses advanced trench VDS (V) = 30V -30V
technology MOSFETs to provide excellent ID = 6.9A -5A
RDS(ON) and low gate charge. The RDS(ON) RDS(ON)
complementary MOSFETs may be used < 28m (VGS=10V) < 52m (VGS = 10V)
in power inverters, and other applications. < 42m (VGS=4.5V) < 87m (VGS = 4.5V)

D2 D1

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G2 G1
S2 S1
SOIC-8
n-channel p-channel

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS 20 20 V
Continuous Drain TA=25C 6.9 -5
Current A TA=70C ID 5.8 -4.2 A
B
Pulsed Drain Current IDM 30 -20
TA=25C 2 2
PD W
Power Dissipation TA=70C 1.44 1.44
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 C

Thermal Characteristics: n-channel and p-channel

Parameter Symbol Device Typ Max Units
Maximum Junction-to-Ambient A t 10s n-ch 48 62.5 C/W
A
RJA
Maximum Junction-to-Ambient Steady-State n-ch 74 110 C/W
C
Maximum Junction-to-Lead Steady-State RJL n-ch 35 40 C/W
A
Maximum Junction-to-Ambient t 10s p-ch 48 62.5 C/W
A
RJA
Maximum Junction-to-Ambient Steady-State p-ch 74 110 C/W
Maximum Junction-to-Lead C Steady-State RJL p-ch 35 40 C/W

Alpha & Omega Semiconductor, Ltd.

AO4604

Electrical Characteristics (TJ=25C unless otherwise noted): N-CHANNEL

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250A, VGS=0V 30 V
VDS=24V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current A
TJ=55C 5
IGSS Gate-Body leakage current VDS=0V, VGS=20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 1 1.9 3 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 20 A
VGS=10V, ID=6.9A 22.5 28
m
RDS(ON) Static Drain-Source On-Resistance TJ=125C 31.3 38
VGS=4.5V, ID=5.0A 34.5 42 m
gFS Forward Transconductance VDS=5V, ID=6.9A 10 15.4 S
VSD Diode Forward Voltage IS=1A 0.76 1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 680 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 102 pF
Crss Reverse Transfer Capacitance 77 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 13.84 nC
Qg(4.5V) Total Gate Charge 6.74 nC
VGS=10V, VDS=15V, ID=6.9A
Qgs Gate Source Charge 1.82 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 4.6 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.2, 4.1 ns
tD(off) Turn-Off DelayTime RGEN=3 20.6 ns
tf Turn-Off Fall Time 5.2 ns
trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/s 16.5 ns
Qrr Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/s 7.8 nC

2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.

AO4604

Electrical Characteristics (TJ=25C unless otherwise noted): P-CHANNEL

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250A, VGS=0V -30 V
VDS=-24V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current A
TJ=55C -5
IGSS Gate-Body leakage current VDS=0V, VGS=20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -1 -1.8 -3 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -10 A
VGS=-10V, ID=5.0A 39 52
m
RDS(ON) Static Drain-Source On-Resistance TJ=125C 54 70
VGS=-4.5V, ID=-4A 67 87 m
gFS Forward Transconductance VDS=-5V, ID=-5A 6 8.6 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.77 -1 V
IS Maximum Body-Diode Continuous Current -2.8 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 700 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 120 pF
Crss Reverse Transfer Capacitance 75 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 10
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V) 14.7 nC
Qg (4.5V) Total Gate Charge (4.5V) 7.6 nC
VGS=-10V, VDS=-15V, ID=-5A
Qgs Gate Source Charge 2 nC
Qgd Gate Drain Charge 3.8 nC
tD(on) Turn-On DelayTime 8.3 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=3, 5 ns
tD(off) Turn-Off DelayTime RGEN=3 29 ns
tf Turn-Off Fall Time 14 ns
trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/s 23.5 ns
Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/s 13.4 nC

A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The
SOA curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.

AO4604

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20
10V 6V
25 5V
16 VDS=5V
4.5V
4V
20
12
ID (A)

ID(A)
15
3.5V
8
10
125C
VGS=3V 4
5
25C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS (Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

60 1.6
VGS=10V
Normalized On-Resistance 1.5 ID=5A
50
1.4
VGS=4.5V
RDS(ON) (m)

40 VGS=4.5V 1.3

1.2
30
1.1

20 1
VGS=10V
0.9
10
0 5 10 15 20 0.8
0 50 100 150 200
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature ( C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

70 1.0E+01

60 1.0E+00
ID=5A
1.0E-01
50
IS Amps
RDS(ON) (m)

125C 1.0E-02
40 125C
1.0E-03
30
25C
1.0E-04
20 25C
1.0E-05
10 0.0 0.2 0.4 0.6 0.8 1.0
2 4 6 8 10 VSD (Volts)
Figure 6: Body diode characteristics
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AO4604

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1000
VDS=15V 900 f=1MHz
ID=6.9A VGS=0V
8 800
700

Capacitance (pF)
Ciss
VGS (Volts)

6 600
500
4 400
300
2 200 Coss
100
Crss
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge characteristics Figure 8: Capacitance Characteristics

100 40
TJ(Max)=150C
TJ(Max)=150C
RDS(ON) TA=25C
TA=25C
limited
100s 30
10 1ms 10s
ID (Amps)

Power W

10ms
20
0.1s

1
1s
10
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JA Normalized Transient

RJA=62.5C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4604

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 10
-10V -5V
-6V
-4.5V 8 VDS=-5V
15
-4V
6
-ID (A)

-ID(A)
10
-3.5V
4 125C

5 VGS=-3V
2 25C
-2.5V
0 0
0.00 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

100 1.60E+00
Normalized On-Resistance VGS=-4.5V

80 1.40E+00 VGS=-10V
VGS=-4.5V
RDS(ON) (m)

60 1.20E+00

VGS=-10V

40 1.00E+00 ID=-5A

20 8.00E-01
1 3 5 7 9 0 25 50 75 100 125 150 175
-ID (A) Temperature (C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

160 1E+01

140 ID=-5A 1E+00

120 1E-01 125C

RDS(ON) (m)

100 1E-02
-IS (A)

80 125C 1E-03
25C

60 1E-04

40 25C 1E-05

20 1E-06
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha and Omega Semiconductor, Ltd.

AO4604

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=-15V
ID=-5A 1000
8 Ciss

Capacitance (pF)
800
-VGS (Volts)

6
600
4
400
Coss
2
200
Crss
0 0
0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 TJ(Max)=150C 40
TA=25C TJ(Max)=150C
10s TA=25C
RDS(ON) 30
10 100s
limited
Power (W)
-ID (Amps)

1ms
20
0.1s 10ms
1
1s 10
10s
DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZJA Normalized Transient

RJA=62.5C/W
Thermal Resistance

PD
0.1

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

 ALPHA & OMEGA SO-8 Package Data
SEMICONDUCTOR, INC.

DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES

SYMBOLS
MIN NOM MAX MIN NOM MAX
A 1.45 1.50 1.55 0.057 0.059 0.061
A1 0.00 0.10 0.000 0.004
A2 1.45 0.057
b 0.33 0.51 0.013 0.020
c 0.19 0.25 0.007 0.010
D 4.80 5.00 0.189 0.197
E1 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
E 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050
aaa 0.10 0.004
0 8 0 8

NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE

PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN

NOTE:
LOGO - AOS LOGO
4604 - PART NUMBER CODE.
LOGO 4 6 0 4 F - FAB LOCATION
A - ASSEMBLY LOCATION
FAYWLC Y - YEAR CODE
W - WEEK CODE.
LC - ASSEMBLY LOT CODE

SOP-8 PART NO. CODE

UNIT: mm

PART NO. CODE

AO4604 4604

Rev. A
 ALPHA & OMEGA SO-8 Tape and Reel Data
SEMICONDUCTOR, INC.

SO-8 Carrier Tape

SO-8 Reel

SO-8 Tape
Leader / Trailer
& Orientation