SILICON DRIFT DETECTOR: FEATURES,

APPLICATION AND SIMULATION WITH KDETSIM

DANIELA CIRRINCIONE
UNIVERSITY OF UDINE

FLASH TALK
XXVI GIORNATE DI STUDIO SUI RIVELATORI COGNE, 13-17/02/2017
SEMICONDUCTOR AND P-N JUNCTION
SOLID STATE SENSORS

Microstrip sensor p-n

Depletion zone of p-n junction junction with segmented
with reverse bias electrode
SILICON DRIFT DETECTOR
divider
metal

anodes depletion
potential
-U

n-side

cathodes
holes
p-side

oxide (SiO2)

drift
potential

anode drift distance

 MAIN POTENTIAL FEATURES OF SDD

Large sensitive area

Excellent spatial resolution
Excellent temporal resolution
Good energy resolution
High efficiency, even at low energies
Customizable design, specifically for the project
Fast data acquisition and analysis
Good radiation hardness
Excellent signal to noise ratio due to the small size and capacity of the anode
Optimization for fast high precision X spectroscopy
REDSOX2

REDSOX REsearch Drift for SOft X-rays

Development of high energy resolution SDD for soft X-rays

Evolution of SDD technology in collaboration with FBK CMM Trento

Evolution of SDD FE electronics in collaboration with PoliMI

Development of large surface SDD for X-ray astrophysics

Development of SDD detection systems for Advanced Light Sources

 REDSOX2

Involved external institutions: FBK-CMM (Trento),

Sincrotrone Trieste Elettra, LABEC, IASF-BO, INAF-IASF-
ROMA, Politecnico di Milano, ICTP Trieste.
INFN groups:Trieste, TIFPA, Bologna, ROMA2, Milano,
Firenze, Pavia
Principal Investigator:Andrea Vacchi, INFN - Trieste
SCIENTIFIC AND TECHNOLOGICAL
APPLICATIONS

Astrophysics
X-ray Astrophysics
Advanced Light Sources
Biophysics
Medicine
Nanotechnology
Materials science
Industry
 SECTION OF SDD SENSOR AND
POTENTIAL ENERGY OF THE ELECTRONS

G. Bertuccio, et al., IEEE TRANSACTIONS ON NUCLEAR SCIENCE,VOL. 63, NO. 1, 02/2016

SIMULATION WITH KDETSIM

Simulation 2D and 3D
It is compatible with all operative
systems that run ROOT, and it is
generally fast to solve the geometries
KDetSim is a library based on ROOT,
written by Gregor Kramberger of
Jozef Stefan Institute of Ljubljana
(Slovenia) during his PhD
Simulates the behavior of charge
transport inside semiconductor
detector
KDETSIM

This type of simulator doesn't

solve continuity equation in silicon
but takes Neff as an input.

Electrodes and mesh are defined

and the boundary conditions are
set at borders of simulated
volume. With this information the
differential equation are solved in
every node of the mesh.
STRUCTURE OF THE SIMULATION LIBRARY
ES. SILICON DRIFT DETECTOR 3D WITH KDETSIM
TEST SIMULATOR
SQUARE CELL OF TRAPEZOIDAL SHAPE SDD
TEST SIMULATOR
SQUARE CELL OF TRAPEZOIDAL SHAPE SDD

2D map of a quarter of the square cell: the plot of amplitude, drift

time and rise time [A. Castoldi, et al., 2-D Mapping of the Response
of SDD Cells of Different Shape in Monolithic Arrays for XRF
Spectroscopy - IEEE NSS/MIC (2016)]
PURPOSE: TIME RESOLUTION

Time resolution t of a time of flight

STEP:
system rise time tr divided by the signal Simulation detector
to noise ratio (S/N).
Project
(The larger S/N, the smaller t)
Improve dedicate electronic
Production
t
t r Testing
S/N
Application
THANK YOU!

DANIELA CIRRINCIONE - DANIELA.CIRRINCIONE@TS.INFN.IT

UNIVERSITY OF UDINE

FLASH TALK
XXVI GIORNATE DI STUDIO SUI RIVELATORI COGNE, 13-17/02/2017