Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 4
4.1
Eg
n i2 N c N exp (b)
kT


n i2 5 10 12 2
2.5 10 25
T
3
Eg
N cO N O exp
300 kT
1.12 300
3

2.912 10 38 T
exp
0.0259 T
300
where N cO and N O are the values at 300 K.
By trial and error, T 417.5 K
_______________________________________
(a) Silicon
T (K) kT (eV) n i (cm 3 ) 4.4
200 0.01727 7.68 10 4 200
400 0.03453 At T 200 K, kT 0.0259
2.38 1012 300
600 0.0518
9.74 10 14 0.017267
eV
(b) Germanium (c) GaAs 400
T (K) n i (cm 3 ) n i (cm 3 At T 400 K, kT 0.0259
) 300
200 2.16 10 10 1.38 0.034533
400 8.60 10 14 3.28 10 9 eV
600 5.72 1012
3.82 10 16
n i2 400

7.70 10 10 2
3.025 10 17
_______________________________________ n 2
i 200 1.40 10 2 2

4.2
Plot 400
3
Eg
_______________________________________ exp
300 0.034533

4.3 200
3
Eg
exp
Eg 300 0.017267
(a) n N c N exp
2
i
kT
Eg Eg
3 8 exp
5 10 11 2

2.8 1019 1.04 1019 T
0.017267 0.034533
300
3.025 10 17 8 exp E g 57.9139 28.9578
1.12 or
exp
0.0259 T 300
3 3.025 1017

2.5 10 23 2.912 10 38 T
E g 28.9561 ln 38.1714

300 8
1.12 300 or E g 1.318 eV
exp
0.0259 T Now
By trial and error, T 367.5 K 3

7.70 10 10 2
N co N o
400

300
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
Let E E c x
1.318 x
exp
0.034533 Then g c f F x exp
kT
To find the maximum value:
5.929 10 21 N co N o 2.370 2.658 10 17 d g c f F 1 1 / 2 x
x exp
so N co N o 9.41 10 cm 37 6
dx 2 kT
_______________________________________ 1 x
x 1 / 2 exp 0
kT kT
which yields
1 x1/ 2 kT
1/ 2
x
2x kT 2
4.5 The maximum value occurs at
kT
E Ec
1.10 2
exp
ni B kT 0.20
exp
n i A 0.90 kT
exp
kT
For T 200 K, kT 0.017267 eV
For T 300 K, kT 0.0259 eV (b)
For T 400 K, kT 0.034533 eV
EF E
(a) For T 200 K, g 1 f F E E exp
kT
ni B 0.20 6 E E
exp 9.325 10 E E exp
n i A 0. 017267 kT

(b) For T 300 K,
E F E
ni B 0.20 exp
exp 4.43 10
4
kT
n i A 0 . 0259 Let E E x
(c) For T 400 K,
x
Then g 1 f F x exp
ni B 0.20 3
kT
exp 3.05 10 To find the maximum value
n i A 0 . 034533
_______________________________________ d g 1 f F d x
x exp 0
4.6 dx dx kT
E EF Same as part (a). Maximum occurs at
(a) g c f F E E c exp kT
kT x
2
E Ec or
E E c exp
kT kT
E E
2
Ec E F _______________________________________
exp
kT 4.7
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
E1 E c 1 N
E1 E c exp E Fi E midgap kT ln
n E1 kT 2 Nc

n E 2 E2 Ec
E 2 E c exp
kT ln 1.04 1019
19
1
kT 0.4952 kT

where
2 2.8 10
kT
E1 E c 4kT and E 2 E c T (K) kT (eV) ( E Fi E midgap )
2
Then (eV)
n E1 4kT E1 E 2 200 0.01727 0.0086
exp 0.0171
n E 2
400 0.03453
kT kT 600 0.0518 0.0257
2
_______________________________________
1
2 2 exp 4 2 2 exp 3.5 4.12
2
3 m *p
or (a) E Fi E midgap kT ln
m n*
n E1
4
0.0854
n E 2 3
0.0259 ln
0.70

4 1.21
_______________________________________
10.63 meV
4.8 (b)
Plot
_______________________________________
E Fi E midgap
3
0.0259 ln 0.75
4 0.080
43.47 meV
_______________________________________

4.9
Plot
_______________________________________

4.10
4.13
m *p
3
E Fi E midgap kT ln Let g c E K constant
4 m n*
Then

Silicon: m p 0.56m o , m n 1.08m o
* *
E f F E dE
E Fi E midgap 0.0128 eV
no g
Ec
c

Germanium: m *p 0.37 m o , 1
m 0.55m o
*
K
E c 1 exp
E EF
dE
n

E Fi E midgap 0.0077 eV kT
E EF

Gallium Arsenide: m *p 0.48m o ,
K exp
Ec
kT dE

m n* 0.067 m o
Let
E Fi E midgap 0.0382 eV
E Ec
_______________________________________ so that dE kT d
kT
4.11 We can write
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
E E F Ec EF E Ec

so that
kT exp kT d
0

We find that
E EF Ec E F
exp exp exp

kT kT exp d exp 1 0
1
The integral can then be written as 0

So

Ec E F
Ec E F
n o C1 kT exp
2
n o K kT exp exp d kT
kT 0

which becomes _______________________________________

Ec EF 4.15
n o K kT exp
kT r1 m
We have r o*
_______________________________________ ao m
4.14 For germanium, r 16 , m * 0.55m o

Let g c E C1 E E c for E E c Then
1
Then r1 16 a o 29 0.53

0.55
no g c E f F E dE or
Ec
o

E Ec r1 15.4 A
C1
E c 1 exp
E EF
dE The ionization energy can be written as
2

kT E
m * o
13.6 eV

m o s
E EF
0.55
exp 13.6 E 0.029 eV
C1 E E
Ec
C
kT dE


16 2
_______________________________________
Let
E Ec 4.16
so that dE kT d
kT r1 m
We can write We have r o*
ao m
E E F E Ec Ec E F
For gallium arsenide, r 13.1 ,
m * 0.067m o
Then
Then 1 o
r1 13.1 0.53 104 A
Ec EF 0.067
n o C1 exp
kT
The ionization energy is
E Ec

E E c exp dE
kT m* o
2
0.067
Ec
E




13.6 13.6
or mo s 13.1 2
Ec EF or
n o C1 exp
kT E 0.0053 eV
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
po
4.17 (d) E Fi E F kT ln

Nc ni
(a) E c E F kT ln

no
2 10 16
2.8 10 19 0.0259 ln

0.0259 ln 1.5 10
10
15

7 10 0.365 eV
0.2148 eV _______________________________________
(b) E F E E g Ec E F
4.19
1.12 0.2148 0.90518
eV Nc
(a) E c E F kT ln

E F E no
(c) p o N exp
kT 2.8 10 19
0.0259 ln

2 10
5


1.04 10 19
exp
0.90518

0.8436 eV
0.0259 E F E E g E c E F
3
6.90 10 3 cm 1.12 0.8436
(d) Holes E F E 0.2764 eV
no (b)
(e) E F E Fi kT ln

ni
p o 1.04 1019 exp
0.27637

7 1015 0.0259
0.0259 ln
2.414 10 14 cm 3
1.5 10
10

(c) p-type
0.338 eV _______________________________________
_______________________________________
4.20
4.18
375
N (a) kT 0.0259 0.032375 e
(a) E F E kT ln 300

po V

3/ 2

0.0259 ln
1.04 1019

n o 4.7 1017 375
exp
0.28

300 0.032375
2 10
16
3
0.162 eV 1.15 10 14 cm
(b) E c E F E g E F E
E F E E g E c E F 1.42 0.28
1.12 0.162 0.958
1.14 eV
eV

(c) n o 2.8 10 exp
19 0.958


p o 7 10 18 375
3/2
1.14
0.0259 exp
300 0.032375
2.41 10 3 cm 3 3
4.99 10 3 cm
(b)
4.7 10 17
E c E F 0.0259 ln

1.15 10
14

0.2154 eV
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

E F E E g E c E F 1.42 0.2154
1.04 10 19 exp
0.28

0.0259
1.2046 eV 2.10 10 14 cm 3

p o 7 10 18 exp
1.2046
E c E F E g E F E

0.0259 1.12 0.28 0.84 eV
4.42 10 2 cm 3 Ec E F
_______________________________________ n o N c exp
kT

2.8 10 19 exp
0.84

4.21 0.0259
375 2.30 10 5 cm 3
(a) kT 0.0259 0.032375 e _______________________________________
300
V

3/ 2

n o 2.8 10 19 375
300
exp

0 .
0.28
032375

3
6.86 10 15 cm 4.23
E F E Fi
E F E E g E c E F 1.12 0.28 (a) n o n i exp
kT
0.840 eV

1.5 10 10 exp
0.22

3/ 2
0.0259

p o 1.04 10 19

375
exp
0.840


300 .032375
0 7.33 10 13 cm 3
7.84 10 7 cm 3
E Fi E F
p o n i exp
Nc kT
(b) E c E F kT ln

no
1.5 10 10 exp
0.22

0.0259

2.8 10 19 3.07 10 6 cm 3
0.0259 ln

6.862 10
15
E F E Fi
(b) n o n i exp
0.2153 eV kT

E F E 1.12 0.2153 0.9047 eV

1.8 10 6 exp 0.22

.0259
0
3
8.80 10 9 cm

p o 1.04 10 19
exp
0.904668
0.0259 E Fi E F
p o n i exp
kT
7.04 10 3 cm 3
_______________________________________
1.8 10 6 exp 0.22

0.0259
4.22
(a) p-type 3.68 10 2 cm 3
_______________________________________
Eg 1.12
(b) E F E 0.28 eV
4 4 4.24
E F E N
p o N exp (a) E F E kT ln

kT p o
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
(b)
1.04 10 19 E c E F 1.12 0.27873 0.84127 e
0.0259 ln
V
5 10
15
(c)
0.1979 eV
(b) E E F E g E F E

n o 4.3109 10 19 exp
0.84127

c
0.034533
3
1.134 10 9 cm
1.12 0.19788 0.92212 eV
(d) Holes

(c) n o 2.8 10 exp
19
0.92212
po
0.0259 (e) E Fi E F kT ln

9.66 10 cm 3 3 ni
(d) Holes
po 5 10 15
(e) E Fi E F kT ln 0.034533 ln

2.381 10
12

ni
0.2642 eV
_______________________________________

5 10 15
0.0259 ln 10

1.5 10 4.26
0.3294 eV (a)
p o 7 1018 exp
0.25

_______________________________________ 0.0259
4.50 10 14 cm 3
E c E F 1.42 0.25 1.17 eV
4.25
400

n o 4.7 10 17 exp 1.17

kT 0.0259 0.034533 eV 0.0259
300 1.13 10 2 cm 3
3/ 2

N 1.04 10 19 400

300
3
1.601 10 19 cm
3/ 2

N c 2.8 1019 400
300
(b) kT 0.034533 eV

3/ 2
4.3109 1019 cm 3

N 7 1018 400


n i2 4.3109 1019 1.601 10 19 300
3
1.078 10 19 cm
3/ 2

exp
1.12
N c 4.7 10 17 400

0 .034533 300
3
5.6702 10 24 7.236 10 17 cm
n i 2.381 10 12 cm 3 N
E F E kT ln

N po
(a) E F E kT ln

po
1.078 10 19
1.601 1019 0.034533 ln 14

0.034533 ln
4.50 10
5 10 15 0.3482 eV
0.2787 eV E c E F 1.42 0.3482 1.072
eV
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
E F E c kT 2
F 0. 5

n o 7.236 10 17 exp
1.07177

kT kT
0.034533 Then F1 / 2 F 1.0
2.40 10 4 cm 3
_____________________________________ no
2
2.8 10 1.0
19

3
4.27 3.16 10 19 cm

(a)
p o 1.04 1019 exp
0.25
(b) n o
2
N c F1 / 2 F
0.0259
6.68 10 14 cm 3
2
4.7 10 1.017

E c E F 1.12 0.25 0.870

eV 5.30 1017 cm 3

n o 2.8 10 19 exp 0.870

_______________________________________
0.0259
4.29
n o 7.23 10 4 cm 3
2
po N F1 / 2 F
(b) kT 0.034533 eV
3/ 2

N 1.04 10 19 400

300 5 10 19
2
1.04 10 F
19
1/ 2 F
1.601 10 19
cm 3
3/ 2
So F1 / 2 F 4.26

N c 2.8 1019 400

300 E E F
3
We find F 3.0
4.311 10 19
cm kT
N E E F 3.0 0.0259 0.0777
E F E kT ln
eV
po
_______________________________________

1.601 10 19 4.30
0.034533 ln

6.68 10
14
E F E c 4kT
(a) F 4
0.3482 eV kT kT
Then F1 / 2 F 6.0
E c E F 1.12 0.3482 0.7718 e 2
V no N c F1 / 2 F


2
2.8 10 6.0
19

3
1.90 10 20 cm

n o 4.311 10 19 exp
0.77175

0.034533
8.49 10 9 cm 3
_______________________________________ (b) n o
2
4.7 10 6.0
17

4.28 3.18 10 18 cm 3
2 _______________________________________
(a) n o N c F1 / 2 F

E c kT 2 , 4.31
For E F
For the electron concentration
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
n E g c E f F E
The Boltzmann approximation applies, so
p E

4 2m *p 3/2
E F E

* 3/2
exp
4 2m
3
h kT
n E 3
n
E Ec
h
E EF E E E E
exp kT exp
kT kT kT

Define
or
E E
x
n E

4 2m n
* 3/ 2
exp
Ec E F
Then
kT
3
kT
h p x K x exp x
To find maximum value of p E p x ,
E Ec E Ec
kT exp set
kT kT dp x
Define 0 Using the results from above,
E Ec
dx
x we find the maximum at
kT 1
Then E E
kT
2
n E n x K x exp x
_______________________________________
To find maximum n E n x , set
dn x 1 1 / 2 4.32
0 K x exp x (a) Silicon: We have
dx 2
Ec E F
n o N c exp
x 1 / 2 1 exp x kT

We can write
Ec E F Ec Ed Ed E F
or
1
0 Kx 1 / 2 exp x x For
2 E c E d 0.045 eV and
which yields
E d E F 3kT eV
1 E Ec 1
x E E c kT we can write
2 kT 2
For the hole concentration
n o 2.8 10 19 exp
0.045
3

p E g E 1 f F E 0. 0259

Using the Boltzmann approximation 2.8 10 exp 4.737

19

p E

4 2m *p 3/ 2

E E
or
n o 2.45 10 17 cm 3
3
h We also have
EF E E F E
exp p o N exp
kT kT

or Again, we can write
E F E E F E a E a E
For
E F E a 3kT and
E a E 0.045 eV
Then
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
n i 7.334 10 11 cm 3

p o 1.04 10 19
exp 3
0.045
0.0259
p o N a 4 10 15 cm 3


1.04 10 19 exp 4.737 no
7.334 10 11 2
1.34 10 8
or 4 1015
cm 3
p o 9.12 10 16 cm 3

(e)
3

(b) GaAs: assume E c E d 0.0058 eV

n i2 2.8 10 19 1.04 10 19 450
300


Then

n o 4.7 10 17 exp
0.0058
3
1.12 300
exp
0.0259 0.0259 450
4.7 10 exp 3.224
17
n i 1.722 10 13 cm 3
or
n o 1.87 1016 cm 3

Assume E a E 0.0345 eV
Then
2
10 14

p o 7 10 18 exp
0.0345
3
no
10 14
2

2


1.722 10 13 2

0.0259
7 10 exp 4.332
18
1.029 10 14 cm 3

or
po
1.722 10 13 2
2.88 1012
p o 9.20 10 cm 3 16
1.029 10 14

_______________________________________
cm 3
4.33 _______________________________________
Plot
_______________________________________ 4.35
(a) p o N a N d 4 10 15 1015
4.34 3 10 15 cm 3

(a) p o 4 15 10 15
3 10 cm 15 3

no
1.5 10 10 2
7.5 10 cm 4
no
n i2


1.8 10 6 2

1.08 10 3 c
3 10 15 po 3 10 15
3 m 3

(b) n o N d 3 1016 cm 3 (b) n o N d 3 10 16 cm 3

po
1.5 10 10 2
7.5 10 cm 3
po
1.8 10 6 2
1.08 10 4 cm
3 1016 3 1016
3 3

(c) n o p o n i 1.5 10 10 cm 3 (c) n o p o n i 1.8 10 6 cm 3

(d) (d)
3 3

n i2 2.8 10 19 1.04 10 19 375

n i2 4.7 1017 7.0 1018 375

300 300

1.12 300 1.42 300

exp exp
0.0259 375 0.0259 375
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
n i 7.580 10 8 cm 3 (ii) p o N a N d 3 10 15 cm 3

p o N a 4 10 15 cm 3

no
1.8 10 6 2
1.08 10 3 cm
no
7.580 10 8 2
1.44 10 2
3 10 15

3
4 10 15

cm 3 (c) The result implies that there is only one

(e) minority carrier in a volume of 10 3 cm 3 .
3 _______________________________________

n i2 4.7 10 17 7.0 10 18 450
300

4.37
(a) For the donor level
1.42 300 nd 1
exp
0.0259 450 Nd 1 E EF
1 exp d
n i 3.853 10 cm 10 3 2 kT
n o N d 10 cm 14 3 1

po
3.853 10 10 2
1.48 10 7
1
1 exp
2
0.20

14 0.0259
10
or
cm 3
nd
_______________________________________ 8.85 10 4
Nd
4.36 (b) We have
(a) Ge: n i 2.4 10 13 cm 3 1
f F E
2 E EF
Nd N 1 exp
(i) n o d n i2 kT
2 2
Now
2
E E F E Ec Ec E F
2 10 15

2 10 15
2

2

2.4 10 13
2
or
E E F kT 0.245

or
n o N d 2 1015 cm 3

po
n i2


2.4 1013 2

no 2 10 15 Then
1
f F E
3
2.88 10 11 cm
(ii) p o N a N d 10 16 7 10 15 0.245
1 exp 1
3 0 .0259
3 10 15 cm
or
n2
no i

2.4 1013 2
f F E 2.87 10 5
po 3 10 15 _______________________________________
3
1.92 10 11 cm
4.38
(b) GaAs: n i 1.8 10 6 cm 3
(a) N a N d p-type
(i) n o N d 2 10 15 cm (b) Silicon:

po
1.8 10 6 2
1.62 10 3
cm 3
p o N a N d 2.5 1013 1 10 13
or
2 10 15
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
p o 1.5 10 13 cm 3

no
1.5 10 10 2
5.625 10 4
Then 4 10 15

n2
no i
1.5 1010 2

1.5 10 7 cm 3
po 1.5 1013 _______________________________________
cm 3
4.40
Germanium:

po
Na Nd N Nd
a


2

n i2 n2
no i
1.5 1010 2

1.125 10 15 cm
2 2 po 2 10 5
3
2
1.5 10 13 1.5 10 13 n o p o n-type

2



2


2.4 10 13 2

_______________________________________
or
4.41
p o 3.26 1013 cm 3

Then 3

n i2 1.04 10 19 6.0 1018 250

no
n i2


2.4 1013 2

1.76 1013 cm
300

po 3.264 10 13 0.66
exp
0.0259 250 300
3

Gallium Arsenide:
1.8936 10 24
p o N a N d 1.5 10 13 cm 3
n i 1.376 1012 cm 3
and
n2
no i
1.8 10 6
0.216 cm 3
2
no
n i2 n2 1
i n o2 ni2
po 1.5 1013 p o 4n o 4
_______________________________________ 1
no ni
2
4.39
So n o 6.88 10 11 cm 3 ,
(a) N d N a n-type
(b) Then p o 2.75 10 12
cm 3

n o N d N a 2 1015 1.2 10 15 Na N
2

3
po a n i2
8 10 14 cm 2 2
2
Na
po
n 2

i 1.5 10 10 2
2.81 10 5 cm
2.752 10 12
2


no 8 10 14 2
Na
3 1.8936 10 24
2

7.5735 10 24 2.752 1012 N a Na

2
(c) p o N a N a N d 2
Na
1.8936 10 24
4 10 15
N a 1.2 10 15
2 10 15 2
so that N a 2.064 10 12 cm 3
N a 4.8 10 cm 15 3
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
So N a 3.5 10 16 cm 3
4.42
Plot
no
1.5 10 10 2

4.5 10 3 cm
_______________________________________
5 10 16

3
4.43
Plot _______________________________________
_______________________________________

4.44
Plot
_______________________________________

4.45
2
N Na N Na
no d d n i2
2 2 4.47
(a) p o n i n-type
2 10 14
1.2 10 14
1.1 1014
2 n i2 n2
(b) p o no i
no po
2
2 10 14 1.2 10 14 no
n i2

2

1.5 10 10 2
1.125 10 16 cm 3
2 10 4

1.110 14
4 10 13 2

4 1013 2
n i2 electrons are majority carriers
4.9 10 27
1.6 10 27
n 2
i p o 2 10 4 cm 3
so n i 5.74 10 13 cm 3 holes are minority carriers
n i2 3.3 10 27 (c) n o Nd Na
po 3 1013 cm 1.125 1016 N d 7 10 15
no 1.1 10 14

3 so N d 1.825 1016 cm 3
_______________________________________ _______________________________________

4.46 4.48
(a) N a N d p-type po
Majority carriers are holes
E Fi E F kT ln

ni
For Germanium
p o N a N d 3 10 16
1.5 10 16
T (K) kT (eV) n i (cm 3 )
1.5 10 cm 3 16
200 0.01727 2.16 10 10
Minority carriers are electrons
400 0.03453 8.60 10 14
n2
no i

1.5 10 10 2

1.5 10 4
600 0.0518 3.82 10 16
po 1.5 10 16 2
cm 3 Na N
po a n i2 and
(b) Boron atoms must be added 2 2
p o N a N a N d N a 10 15 cm
3

5 10 N a 3 10 1.5 10 E Fi E F (eV)
16 16 16
T (K) p o (cm 3 )
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
200 1.0 10 15 0.1855
400 1.49 10 15 0.01898 1.12
exp
600
3.87 10 16
0.000674 0.0259 T 300
3

_______________________________________
5.25 10 28 2.912 10 38 T
300


4.49
12972.973
Nc exp
(a) E c E F kT ln
T
Nd By trial and error, T 536.5 K
2.8 10 19 (b) At T 300 K,
0.0259 ln

Nd Nc
E c E F kT ln

For 10 14 cm 3 , E c E F 0.3249 eV no
10 15 cm 3 , E c E F 0.2652 eV
, E c E F 0.2056 eV 2.8 1019
E c E F 0.0259 ln
3
10 16 cm
10 15
10 17 cm 3 , E c E F 0.1459 eV
0.2652 eV
Nd At T 536.5 K,
(b) E F E Fi kT ln

ni 536.5
kT 0.0259 0.046318 eV
300
Nd
0.0259 ln 3/ 2

1.5 10
10

N c 2.8 10 19 536.5

300
For 10 14
cm 3 , E F E Fi 0.2280 eV 6.696 1019 cm 3

10 15
cm 3 , E F E Fi 0.2877
eV
10 16 cm 3 , E F E Fi 0.3473
eV Nc
E c E F kT ln

10 17
cm 3 , E F E Fi 0.4070 no
eV
_______________________________________
6.696 1019
E c E F 0.046318 ln

1.05 10
15
4.50
Nd N
2
0.5124 eV
(a) n o d n i2
2 2
then E c E F 0.2472 eV
n o 1.05 N d 1.05 10 cm 15 3 (c) Closer to the intrinsic energy level.
_______________________________________
1.05 10 15
0.5 10 15 2

4.51

0.5 10
15 2
n i2 E Fi E F kT ln
po


so n i2 5.25 10 28 ni
Now At T 200 K, kT 0.017267 eV
T 400 K, kT 0.034533 eV
3 T 600 K, kT 0.0518 eV

n i2 2.8 10 19 1.04 10 19 T

300
At T 200 K,
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
For N a 1014 cm
3

3 ,
200
n i2 2.8 10 19 1.04 10 19
300 E Fi E F 0.4619 eV
1.12 N a 1015 cm 3 ,
exp
0.017267 E Fi E F 0.5215 eV
n i 7.638 10 4 cm 3 16
N a 10 cm 3 ,
At T 400 K,
E Fi E F 0.5811 eV
3
N a 1017 cm 3 ,
n 2
i
2.8 10 19
1.04 10 19 400

E Fi E F 0.6408 eV
300
1.12 (b)
exp
0 .034533 N 7.0 1018
E F E kT ln 0.0259 ln

n i 2.381 10 cm Na Na
12 3

At T 600 K, For N a 10 14
cm 3 ,
3
E F E 0.2889 eV
n 2
i
2.8 10 19
1.04 10 19 600
N a 1015 cm 3 ,
300
E F E 0.2293 eV
1.12
exp 16
0.0518 N a 10 cm 3 ,
n i 9.740 10 14 cm 3 E F E 0.1697 eV
At T 200 K and T 400 K, N a 1017 cm 3 ,
p o N a 310 15 cm 3 E F E 0.1100 eV
At T 600 K, _______________________________________
2
Na N 4.53
po a n i2
2 2 m *p
3
(a) E Fi E midgap kT ln
4 m n*
2
3 10 15

3 10 15
2

2


9.740 10 14 2
3
0.0259 ln 10

4
3
3.288 10 15
cm or
E Fi E midgap 0.0447 eV
Then, T 200 K, E Fi E F 0.4212 (b) Impurity atoms to be added so
eV E midgap E F 0.45 eV
T 400 K, E Fi E F 0.2465 (i) p-type, so add acceptor atoms
eV (ii)
T 600 K, E Fi E F 0.0630 E Fi E F 0.0447 0.45 0.4947 eV
eV Then
_______________________________________ E EF
p o n i exp Fi
4.52 kT
(a)

10 5 exp
0.4947

0.0259
Na Na
E Fi E F kT ln 0.0259 ln or

1.8 10
6
ni p o N a 1.97 10 13 cm 3
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

N d 4.7 1017 exp 0.13346

0.0259
4.54
Ec E F
3
2.718 10 15 cm
n o N d N a N c exp N d 10 15
kT
so N d 1.718 10 15 cm 3
Additional
donor atoms

N d 5 10 15 2.8 10 19 exp
0.215
_______________________________________
0.0259
5 10 15 6.95 10 15 4.56
or N
N d 1.2 1016 cm 3 (a) E Fi E F kT ln

N a
_______________________________________
1.04 1019
4.55 0.0259 ln

2 10
16
(a) Silicon
0.1620 eV
Nc
(i) E c E F kT ln

Nd

2.8 1019 Nc
0.0259 ln 0.2188 (b) E F E Fi kT ln

N
6 10
15
d

eV
(ii) 2.8 1019
E c E F 0.2188 0.0259 0.1929 0.0259 ln 0.1876 e

2 10
16

eV
V
Ec E F (c) For part (a);
N d N c exp
kT p o 2 10 16 cm 3

n2
no i
1.5 1010 2

2.8 1019 exp 0.1929
po 2 10 16
0.0259 3
1.125 10 4 cm
N d 1.631 10 16 cm 3
For part (b):
N d 6 10 15
n o 2 1016 cm 3

N d 1.031 1016 cm 3 n2
po i
1.5 1010 2

Additional no 2 10 16
donor atoms
(b) GaAs 1.125 10 4 cm 3
4.7 1017 _______________________________________
E
(i) c E F 0 . 0259 ln



10 15 4.57
0.15936 eV E F E Fi
(ii) n o n i exp
kT
E c E F 0.15936 0.0259 0.13346
eV
1.8 10 6 exp
0.55

0.0259
3.0 1015 cm 3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
Add additional acceptor impurities
no N d N a 7.0 10 18
0.0259 ln 0.2009 e

3 10 15
7 10 15
Na 3 10
15

N a 4 10 cm 15 3 V
_______________________________________ (b)
7.0 10 18
4.58
E F E 0.0259 ln 4


1.08 10
po 1.360 eV
(a) E Fi E F kT ln

ni 7.0 10 18
(c) E F E 0.0259 ln

1.8 10
6


3 10 15

0.0259 ln 0.3161 e

0.7508 eV
1.5 10
10
375
V (d) E F E 0.0259
300
no
(b) E F E Fi kT ln
ni

ln

7.0 10 18 375 300 3 / 2

4 10 15
3 10 16 0.2526 eV
0.0259 ln 0.3758 e

1.5 10
10
450
(e) E F E 0.0259
V 300
(c) E F E Fi

ln

7.0 1018 450 300 3 / 2

1.48 10 7
1.068 eV
_______________________________________

po
(d) E Fi E F kT ln

ni

375 4 10 15
0.0259 ln

7.334 10
11
300
0.2786 eV
n
(e) E F E Fi kT ln
o

ni 4.60
n-type

1.029 10 14 no
450 E F E Fi kT ln
0.0259 ln

300 1.722 10
13
ni
0.06945 eV
_______________________________________ 1.125 10 16
0.0259 ln 0.3504 e


1.5 10 10
4.59
V
N ______________________________________
(a) E F E kT ln


po
4.61
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
2 donor
N N
p o a a n i2
2 2 N d 0.05 7 10 15 3.5 10 14 cm
5 10 15 3
5.08 10 15

2 Replace As atoms Silicon acts as an
5 10 15

2 acceptor

n i2
2

N a 0.95 7 10 15 6.65 10 15 cm
5.08 10 15
2.5 10 15
2
3

(b) N a N d p-type

2.5 10 15 2
n i2 (c)
6.6564 10 30 6.25 10 30 n i2 p o N a N d 6.65 10 15 3.5 10 14
n i2 4.064 10 29 6.3 10 15 cm 3

Eg
ni2 N c N exp
kT

no
n i2


1.8 10 6 2

5.14 10 4 c
po 6.3 10 15
350
kT 0.0259 0.030217 eV m 3
300
po
2 (d) E Fi E F kT ln

N c 1.2 10 19
350
1.633 10 19
c ni
300
m 3
6.3 10 15
0.0259 ln 0.5692 e

1.8 10
6
2

N 1.8 10 19 350
2.45 10 19 cm V
300 _______________________________________
3

Now

4.064 10 29 1.633 10 19 2.45 10 19
Eg
exp
0.030217
So

E g 0.030217 ln

1.633 10 19 2.45 1019

4.064 10 29
E g 0.6257 eV
_______________________________________

4.62
(a) Replace Ga atoms Silicon acts as a