8

81
82
821
822 PN
823
824
83
831
832
84 III-V
841 III-V
842 III-V
8421 GaAs
8422 GaAs/Ge
8423 III-V
8424 GaAs
843 III-V
8431 III-V
8432 III-V
8433 III-V
85
851
8511
8512
8513
8514
8515 /
8516 /
8517
852 CIGS
8521 CIGS
8522 CIGS
8523 CIGS
8524 CIGS
853
8531 CdTe
8532 CdTe/CdS
8533 CdTe/CdS

1
 854
8541
8542
8543
86
861
862
8621
8622 TPV
8623
8624
8625
87

2
 8

8. 1

pn

,
, 19
E.Becquerel 1Solar Cells
501954pn
6%2

AM0 8%
16-18%GaInP/GaAs/GeAM0
28-30%
1
1973 1980
30 MW2 80
90
13 100 MW
31997
35
2005 , 1.2GW
1520 0.100.20 /

30MW

3
 82

821

139
4 1
m4mHmHe
E=mC2 (C ) 25MeV 700
0.7 3.91026

5758K
1.5 ()
1366 W/m2
46 50

Van Allen

822 pn

pn pn
pn
pn n p P
N 8.1a b pn
n EFn p EFp

b = qVbi = E Fn E Fp 8.1

q Vbi pn pn
EF
pn Eg
pn
n p n
p pn pn
Voc
V I
EFe EFh
8.1b pn V

qV = E Fe E Fh 8.2

4
 8.1 abpn

pn J pn Jd
Jsc

J J d J sc

J s [exp(qV / kT ) 1] J sc 8.3

Js pn k Jsc
pn Jd

J 0

kT J sc
Voc = ln 8.4
q J s

I0

Voc J sc FF
= 8.5
I0
FF VmJm
8.2

J mVm
FF = 8.6
J scVoc

5
 8.2 J-V JscVoc VmJm

AM0
1366 W/m2 1.5 AM1.5
1000 W/m2
AM1.5GAM1.5D
8.3 AM0AM1.5G AM1.5D AM1.5
H2OO2CO2
, AM1.5 AM1.5G
25oC

8.3 AM0AM1.5GGlobal) AM1.5D (Direct)

823

6
 Jsc Eg pn

L g

J sc = q QN ph ddx 8.7
0 0

Nph Q

L g Eg

h c 1.24
g = ( m) (8.8)
q Eg Eg

h c Eg eV
pn Jsc

J sc = q ( Le + Lh + W ) QN ph d 8.9
0

W Le (Dee)1/2 Lh= (Dhh)1/2 p n

D(), D
:

kT
D= 8.10
q
Voc8.4 Jsc / Js
Js pn np0/e pn0/h
0 0
np pn
Js = q Le + q Lh 8.11
e h
np0 pn0 p n , e h p n
n+p p+n p NA
n+p

qLe Eg
Js = exp( ) (A/cm2) 8.12
e N A x10 20
kT
Js Eg
ShockleyRead
Hall

823

pn pn
pn
L

7
 Eg E0
NC NV xn
p EFe EFh

E c E Fe
n = N c exp( ) (8.13)
kT

E Fh E v
p = N v exp( ) (8.14)
kT
Jn Jp

dE Fe
J n = nq e ( )
dx

dn d kT dN c
= qDn + n n[q ] (8.15)
dx dx N c dx

dE Fh
J p = pq p ( )
dx

dp d ( + E g ) kT dN v
= qD p + p p[q + ] (8.16)
dx dx N v dx

J = Jn + J p (8.17)

EFeEFhEFJnJp0:

1 d ( + Ec E F )
0 = (8.18)
q dx

Voc
L
Voc = ( 0 )dx (8.19)
0

0 3

8
 L
q n n + q p p
Voc = 0 dx
0

L
n d p p d dE g p d n d
+ n + + kT p ln N V n ln N C dx
dx dx
0
dx dx dx
L
p dp n dn
+ kT dx (8.20)
dx
0
dx

np np qnnqpp
/
(8.20)Voc

1pn
2Effective force field
3Dember potential

pn
pn

9
 83

831

20
15%4
p pn Al
8.4 p

8.4 PN

70
56

7 17

80

PESC 208
PERC 249
PERC P
0.5 cm
PERTPERL
8.5 PERL

24.7AM1.525 oC) 10

10
 8.5 24.7

832

1999 7

AM1.5 49%

32.8%
11 Shockley-Queisser
29% 760mV 12 24.7
85% 720mV,
5%
5%

8 8.7
29% 80
250-350

Lambertian
2n2 n
8.6
1 24%

11
 8.6 AM1.5100mW/cm225oC)

15 20
13
1 FZ () n-
PERT FZ n-
22 cm2
22.7% 14
2 Fraunhofer LFC
PERC
21.6% 15
3 SunPower BPC
23%SunPower
25 MW 19.9%
16
4 (HIT)

, 717 n- CZ HIT
100.4cm2 21.8% 17
1 4 AM1.5
30MW 20

12
 8.1 AM1.5

Voc Jsc FF Efficiency

(mV) (mA/cm2) (%) (%)

Re n-PERT n-FZ 702 40.1 80.5 22.7

LFC p-FZ 678 39.1 81.4 21.6

BPC n-PV-FZ 678 39.5 80.3 21.5

HIT n-CZ 718 38.5 79.0 21.8

13
 84 IIIV

841 III-V

GaAs III-V ,

GaAs Ga As
GaAs Eg1.42eV (300K) GaAs

GaAs
1GaAs Eg1.42eV, GaAs
8.2 2002
18 8.2
GaAs III-V

8.2 2002

2GaAs GaAs
104cm-1 8.7 , Eg GaAs
1 1/e
( e ), 3 95 GaAs
GaAs 3
Eg=1.12eV
GaAs 8.7
200300m ,
, Si 200~300m GaAs 35 m

14
 8.7 Si GaAs

3GaAs 1MeV
1x10 cm-2 GaAs 75
15

Si 66
BOL
18 13.8 GaAs Si
EOL 14.9 10.0 GaAs EOL Si 1.5

4GaAs
Voc
Isc
GaAs 0.23%/ Si
0.48%/GaAs
200GaAs 50
75 GaAs ,
GaAs , GaAs

GaAs :
GaAs Si

GaAs 1GaAs
3 3
5.32g/cm Si 2.33g/cm ;2GaAs
,; 3GaAs Si 10 GaAs

GaAs III-V

842 III-V

15
 GaAs 20 60 LPE
80 MOCVD MBE
GaAs MOCVD
III-V MOCVD
MOCVD GaAs
III-V
MOCVD GaAs III-V
III-V GaAs
InP

GaInP/GaAs/Ge

8421 GaAs

GaAs IIIV
LPE () n+-GaAs , n+-GaAs
Te Sn n GaAs 10m~1x1017/cm3
Zn Mg p+-AlxGa1-xAs 1m 1x1018/cm3
p+-AlxGa1-xAs p n GaAs n-GaAs
p+-AlxGa1-xAs p-GaAs p-GaAs n-GaAs
p n 5x1017/cm3 p
p+-AlxGa1-xAs Zn 700C
~2 m
p+-AlxGa1-xAs GaAs
GaAs 105cm-1
GaAs SiO2/Si
GaAs AlxGa1-xAs GaAs
10% GaAs AlxGa1-xAs GaAs
x=0.8 AlxGa1-xAs Eg2.1eV
, AlxGa1-xAs GaAs
Ec >> Ev, AlxGa1-xAs P Ec
()Ev
p AlxGa1-xAs/GaAs LPE-
GaAs 22%~23%1985
1995 SAC-B GaAs (1000 EOL
215W)LPE
(2x2 cm2 2x4 cm2) GaAs LPE-GaAs

1990 MOCVD GaAs MOCVD

MOCVD
GaAs 25%
GaAs

16
 n GaAs AuGeNi/Au
p+-GaAs Cr/AuTi/Au Ti/Pa/Ag 8.8
GaAs I-V 4cm2 AM0
21.95% 514

8.8 GaAs I-V 19

8422 GaAs/Ge

GaAs GaAs/GaAs
GaAs
GaAs/GaAs
GaAs GaAs GaAs/Ge

Ge 5.646 GaAs 5.653

Ge GaAs Ge GaAs (Ga
), Ge GaAs
Ge GaAs MOCVD
MBE GaAs GaAs/Ge
LPE Ga Ge Ga
~700C Ge Ga
Ge Ga GaAs/Ge
MOCVD GaAs/Ge GaAs/Ge
p/n p/n GaAs p/n
Ge
Ga Ge p
, 600 630 (0.2m/h) Ge
(1000)GaAs 680 730(4m/h)(3.2m) GaAs Ge
(001) 6o Ge GaAs
Al0.16Ga0.84As (50nm)
GaAs/Ge Voc

17
 MBE GaAs/Ge MOCVD
MBE
4cm220AM1.5 GaAs P+GaAs
nGaAs GaAs P+ n
n+ GaAs/Ge
Mo GaAs 20

8423 III-V

Eg Eg

AlGaAs/GaAs GaInP/GaAs

V Vi I
Ii V V1 V2I I1 I2

Voc Voci Voc Voc1 Voc2

Isci Isc

V1 V2=0V1 V2

GaAs/GaSb

AlxGa1-xAs GaAs
GaAs AlxGa1-xAs/GaAs

B.Chung 1988 MOVPE Al0.37Ga0.63As/GaAs

AM0 AM1.5 23.0 27.6 0.5cm221
Al0.37Ga0.63As

NRELJ. Olson 80
GaInP/GaAs MOCVD p+-GaAs
GaInP/GaAs
GaInP Ga0.5In0.5P/GaAs

18
 Al0.4Ga0.6As/GaAs Al0.5In0.5P/GaAs
Ga0.5In0.5P/GaAs 1.5 cm/s Al0.4Ga0.6As/GaAs Al0.5In0.5P /GaAs
210 cm/s 900 cm/s Ga0.5In0.5P / GaAs
R. Kurtz J. Olson Ga0.5In0.5P
22Ga0.5In0.5P Eg 1.82eV 1.89eV

1990 J. Olson
P+-GaAs 0.25cm2Ga0.5In0.5P/GaAs AM1.5
27.3231994 K. Bertness J.Olson
Ga0.5In0.5P/GaAs AM1.5 AM0 29.5 25.724
8.9 AM0
0.6m 0.5m(BSF)
0.07m GaInPp 3x1017cm-3
0.05m GaInP Eg=1.88eV
5 1.9
420/
AlInP
Se-C Se-Zn

8.9 Ga0.5In0.5P/GaAs

T.Takamoto InGaP/GaAs
1997 p+-GaAs (4cm2) InGaP/ GaAs
AM1.5 30.2825
J.Olson
InGaP GaAs AlInP

19

GaAs/GaSb J.Fraas
GaAs GaSb GaAs GaSb

GaAs GaSb 1990

GaAs/GaSb 35%AM1.5, ~200xSun

8424 GaAs

Isc Voc
,

III-V
III-V
III-V
III-V Si
IoffeFraunhofer III-V
NREL
III-V III-V
1.9 / III-V
8.10 ,
26

8.10

20
 843 III-V

8431 III-V

8.11 ,
() 4

8.11

NRELM.Wanlass200627GaAs
GaInP/GaAs/GaInAs
1.9eV1.4eV 1.0eVnAlInP, GaInP
GaInPGaAs1.0eV GaInAsGaInP
AM1.510.137.9%8.128.13
I-VSpectrolabR. King
GaInP/GaInAs/Ge236AM1.5D3928,29

21
 8.12 GaInP/GaAs/GaInAs

8.13 37.9%GaInP/GaAs/GaInAsI-V

8432 III-V

GaAs III-V

III-V
20 80 GaAs lift-off

22

GaAs 3~5m GaAs
GaAs GaAs GaAs
GaAs 10%
Sharp 2005 10 PVSEC-15
Sharp 28.5%(AM1.5) III-V
0.38g/W, 2631.5W/Kg
III-V

8433 III-V

K. Barnham p-i-n (MQW)

30 p-i (MQW)-n
8.14 Eb
EaEa p-i(MOW)-n
( Lb Lz)

8.14 p-i-n

J = J d J sc (8.21)

JdShockley,

Eb eV
J d = A exp( ) exp 1 8.22
kT nkT
EbnA

J sc = QqN ( E a ) (8.23)

QNEasEa
Voc

23
 E A
qVoc = n b kT ln (8.24)
J sc
p-i(MQW)-n Jsc Ea, Voc
Eb A/Jsc p-i(MQW)-n
Voc MQW
AlGaAs/GaAs
InP/InGaAsGaAs/InGaAsInP/InAsP
M. YamaguchiMBE
GaAs/InGaAs p-i(MQW)-n31 11
8 nm72 nmInGaAs(20nm)
GaAsInGaAs
MQWAM1.518422
MQW
Emperial College LondonT. BushnellGaAs/InGaAs
MBEMOCVDGaAs
GaAsP/InGaAs GaAs InGaAs
GaAs/InGaAs21.9%AM1.532
GaAsP/InGaAs8.3
150VocFFJscAM018.4%
19.4%33

0.6m

8.3 GaAsP/InGaAs

24
 85

pn

851

a-Si
(a-Si:H)
1019cm-3 60
(a-Si:H)1975 Dundee W.E. Spear
a-Si:H p n pn 1976 RCA D.E.Carlson
34
2.4%35
// 13
2005 115MW2006
225MW

8511

(<20~30) x

a-Si:H 1-10cm2/Vs
0.1-0.01cm2/Vs 1-0.1

1-2

1.12eV
3.4eV

25


SiH4Si2H636
PECVD a-Si:H
520 a-Si:H
a-Si:H 1016cm-3
N P 10
a-Si:H
a-Si:H
150
250C
SiH2 SiHn

DCRF13.56 MHz
VHF30100 MHz2.45 GHz
VHF

Photo-CVD a-Si:H
253.7nm 184.9nm
CVD
a-Si:H
a-Si:H
a-Si:H CVD

HW-CVD
300 17001900
0.5mm
HWCVD a-Si:H
a-Si:H H 12
at.%HWCVD a-Si:H > 1 nm/s
PECVD 10

SiH4 GeH4 a-SiGe:H

Eg
SiH4 GeH4 GeH4 Ge
Si2H6 GeH4 Si2H6 GeH4
a-SiGe:H
SiH4 CH4 C a-SiC:H
Eg C 2 eV a-Si
a-SiC:H

26
 8512

1977 D.Staebler C.Wronski

, 160 ,
Staebler-Wronski SWE 37SWE
,

Si , Si-Si
3839 40

41

42

,

(Protocrystalline silicon)43

(Polymorphous silicon) 440.3

45
On the edge of
crystallinity
46
4748Hydrogen dilution
80 PECVD a-Si:H
c-Si:H

a-Si:H
c-Si:H

49

SiH4 H

8513

c-Si:H
80

27

PECVD
1017 cm-3

nanometer-sized crystalline siliconnanocrystalline silicon,

nc-Si 80

S.Veprek
1-100 50

nc-Si(nc-Si:H)

2.0eV

8514

pn
p-i-n n-i-p
pn p n
p p
(B)a-SiC:Hnc-Si:H
i
1m i
i

8.3
J-V
R.Crandall
J 51

d
J = qGl d 1 exp( i ) 8.25
ld
G di ld

l d =

28
 Vbi V
(8.26)
di
Vbi di ld J qGdi
di ld
J V 8.268.25
di di
300nm

8.15 AM1.5 n-i-p

25000
250-300nm 52

8.15

300nm

SnO2 ,
ZnO Al Ag ITO
ZnO Al Ag
ZnO Ag
1/3

T.Tiedje Eg 1.72eV p-i-n
a-Si:H Voc 1V0.1V 53
p n
p (proto-Si)54 p
n-i-p 8.4 55

29
 p (nc-Si) Voc 1.0221.042Vp (proto-Si)
Voc 0.973Vp (c-Si) Voc 0.6760.369V P

3-5 1.8-2.0eV 0.1eV

8.4 P n-i-p a-Si:H

12.513.0% 1000
10.4% a-SiGe:H
Ge p /56

8515 /

a-Si/a-Si

a-Si/a-SiGe pin a-Si:H i

1.8eV pin a-SiGe:H a-SiGe:H i
1.5 eV 8.5 a-Si/a-SiGe
SnO2 p1
a-SiC:H n2 ZnO2/Al
n1 p2
a-Si:H
a-SiGe:H140nm 150nm

30
 8.5 a-Si/a-SiGe

8.16 a-Si/a-SiGe/a-SiGe
p
n
Ag ZnO a-Si:H a-SiGe:H
1.8eV~120nm1.6eV~150nm1.4 eV~200 nm
a-SiGe:H Ge a-Si/a-SiGe/a-SiGe
14.6% 13.057

8.16

8516 /

31


1.5 2
RF-PECVD 1 /
VHF-PECVD
10 torr1W/cm21cm

30 /
HW-CVD p-i
58
Uni Solar B. Yan 2006 4 59
VHF-PECVD a-Si:H/a-SiGe:H/nc-Si:H
15.07% 13.31% a-Si:H/nc-Si:H/nc-Si:H
14.14% 13.26% 8.17
a-Si:H/a-SiGe:H/nc-Si:H I-V QE

0.6-0.7

Kaneka K. Yamamoto 4
a-Si:H/a-SiGe:H/c-Si:H 15.0%
1cm2 4140.5cm2 13.4%

60

2
(a)
0

-2 Jsc=9.13 mA/cm2
J (mA/cm )

Voc=2.195 V
2

-4 FF=0.752
Eff=15.07%
Area=0.25 cm2
-6

-8

-10
-0.5 0.0 0.5 1.0 1.5 2.0 2.5
V (V)

32
 1.0 top
(b) middle
0.8 27.77
bottom
mA/cm2
total
0.6

QE
0.4
9.13 9.27
9.37
0.2

0.0
300 500 700 900 1100
Wavelength (nm)

8.17aa-Si:H/a-SiGe:H/nc-Si:H I-V b
a-Si:H/a-SiGe:H/nc-Si:H QE

2005 Canon K. Saito 801.6cm2

a-Si:H/c-Si:H/c-Si:H 13.1% 7.2%
30 /61TEM
8.18
/ 0.6-0.7

8.18 c-Si:H TEM

8517

550oC

33

Kaneka
62
Pacific Solar

PECVD n pp 1.6
7 /s
8.19
TCO
n p Al
p n SiN
660cm2 8.2%
20MW 63
IEC61646 10 1000

64

8.19

8.6 p-i-n
n-i-p

34
 8.6 p-i-n n-i-p

p-i-n Jsc Voc FF Effi(ini) Eff(sta) Area Inst. Note

2 2
(mA/cm ) (V) (%) (%) (cm )
a-Si 18.10 0.915 0.705 11.70 - 1 Sanyo
a-Si 107.7mA 12.560 0.710 9.60 - 100 Sanyo AM1.5
a-Si/a-Si - - - - 8.90 1200 Fuji
a-Si/a-SiGe 11.00 1.520 0.691 11.60 10.60 1 Sanyo
a-Si/a-SiGe 811.8mA 161.2 0.706 11.20 10.00 8252 Sanyo Rd=15A/s
a-Si/nc-Si 14.5 1.33 0.61 11.8 0.253 AM1.5
a-Si/nc-Si 10.29 13.36 0.71 9.72 100 AM1.5
a-Si/nc-Si 14.4 1.410 0.719 14.50 - 1 Kaneka AM1.5
a-Si/nc-Si 510 mA 136.7 0.737 13.40 - 4140.5 Kaneka
a-Si/a-SiGe/
nc-Si 8.93 2.280 0.735 15.00 - 1 Kaneka
n-i-p
a-SiGe 22.40 0.843 0.727 13.06 10.40 0.25 UT AM1.5
a-Si/a-SiGe 11.04 1.762 0.738 14.40 12.40 0.25 Uni.Solar AM1.5
a-Si/nc-Si 12.01 1.398 0.723 12.14 - 0.25 Uni.Solar
a-Si/nc-Si 502mA 1.424 0.720 11.30 10.24 45.5 Uni.Solar
a-Si/a-SiGe/
a-SiGe 8.57 2.357 0.723 14.60 13.00 0.25 Uni.Solar
a-Si/a-SiGe/
a-SiGe 3.78A 2.20 0.607 9.00 - 412 Uni.Solar AM0, polymer
a-Si/a-SiGe/
nc-Si 9.13 2.195 0.752 15.07 13.31 0.25 Uni.Solar Rd=0.8nm
a-Si/nc-Si/
nc-Si 9.11 1.965 0.790 14.17 13.26 0.25 Uni.Solar
a-Si/nc-Si/ 7.2%
nc-Si 9.87 1.890 0.701 13.10 deg 801.6 Canon Rd=3nm/s

852 CIGS

Cu(InGa)Se2 1
3 Cu(InGa)Se2
19.5%0.5cm2
13.4%3459cm2

CuInSe219501974
pCuInSe2nCdSCuInSe2651976
CuInSe2/CdS661981Boeing9.4%CuInSe2

35
67

8521 CIGS

CuInSe2pCuInSe2
Cu2224 at.%CuInSe28.768

8.7 CuInSe2

CuInSe2CuGaSe2Cu(InGa)Se2Ga/(In
+ Ga)0.2-0.31.02 eV 1.11.2 eV
Cu(InGa)Se2/CdSpn
Cu(InGa)Se2
Cu(InGa)Se2/CdS Soda
lime NaNaInCu
CuIn
CuInSe2 1.4eV105/cm

A(E E g )
2

= (8.27)
E
Cu(In1-xGax)Se2EgGa

E g = 1.010 + 0.626 x 0.167 x(1 x) (8.28)

CuInSe290-900cm2/Vs 50150cm2/Vsp
515cm2/Vs

8522 CIGS

Cu(InGa)Se2/CdS 8.20Soda lime

MoCu(InGa)Se213

36
CdS50nmMOCVD
ZnOZnO
MgF2
Soda lime Cu(InGa)Se28x10-6/K
Na

8.20 Cu(InGa)Se2/CdS

Cu(InGa)Se28.21CuInGaSe
Cu(InGa)Se2
Cu13001400oCIn10001100 oCGa11501250 oCSe
300 350 oC 20200 nm/min

8.21

37

Cu(InGa)Se2/CdS
Cu
Cu(InGa)Se2
Cu/In Cu/In/Se 400500 oC H2Se Se 30
60 CuInSe2
Ga Ga Mo
CuInSe2/CuGaSe2 Ga CuInSe2 Mo
69 1 Ga In
Cu(InGa)Se2 70 S
Cu(InGa)(SeS)2 71
Ga
H2Se
p Cu(InGa)Se2 CBD n CdS
Cd S NH3 NH4OHPH>9
Cu(InGa)Se2 6080oC
CdS /
TEMCuInSe2 (112) 0.334 nm CdS
(111) (002) 0.336 nm, 0.6 Ga
Cu(InGa)Se2 (112) CuIn0.7Ga0.3Se2 (112) 0.331 nm
1.5
CdS
Cu(InGa)Se2
Cu(InGa)Se2 CdS CdS

Cd
n Zn In CdS
72
ZnO ZnO MOCVD
ZnO CdS
50 ZnO

Ni/Al ZnO

8523 CIGS

8.22 Cu(InGa)Se2/CdS Cu(InGa)Se2CdS ZnO

1.2eV2.4eV 3.2eV
CdS Cu(InGa)Se2 Ec +0.3eV ZnO CdS
Ec 0.3eV73 8.22
74X-XPS
UPS Ec Ec -0.1-0.7eV
Cu(InGa)Se2
Cu(InGa)Se2 p n Cu(InGa)Se2 pn

38
 Cu(InGa)Se2/CdS
CdS Cu(InGa)Se2

8.22 Cu(InGa)Se2/CdS

8524 CIGS

Cu(InGa)Se2/CdS19.5(AM1.5)75
Cu(InGa)Se22.5
MoSoda limeSeInGa
InGa90250300oCSe
Se/(In + Ga) 3(InxGa1-x)2Se3
540oCCuSeSe/Cu3Cu/(In
+Ga)0.951.1540oC SeIn
GaCuxSeCu(InGa)Se2, Cu
Ga Se 350oCnCdS CBD
5060
Cu(InGa)Se28.23
19.5%Cu(InGa)Se21.14 eVCax0.3
1.151.37 eV

39
 8.23 CIGS Cu(InGa)Se2

Cu(InGa)Se2/CdS20CdS
2.4eV520nmCdS
ZnS(O,OH)CdS8.5
CdCdS
ZnO
Cu(InGa)Se2Ga>0.3
Cu(InGa)S2
Cu(InGa)Se28.8CIGS

8.8 CIGS

CIGS
10138.7CIGS
42005CIGS8MW
200644MWWurth Solar 20051.8MW CIGS
0.72 m2 200615MWCIGS
Cu(InGa)Se2 In4In1/4In
CIGSG
In

8.9 CIGS

853

CdTe II-VI
15

40
 CdTe1947
761959RCApCdTeInpn
2771979NCRSnCdTeAs
pCdTe710.5%781987pCdTe
In2O313.4% [19]1993nCdS
pCdTeCdS/CdTe15.8%792001NREL
CdS/CdTe16.5%80

8531 CdTe

Eg
1.5 eV825nm
CdTe5 105/cm, 2CdTe99

II-VICdTe

nppnCdTe
8.10

8.10 CdTe

41
 CdTeCSS
VTDCdTe
CdTeCdTe8.24(a) CdTe
550oC650750oC

CdTe10 torr

CdTe700oC
CdTe8.24(b)
CdTeCdTe0.1
1cm

CdTe First Solar CdTe

MOCVDCdTe

8.24 CdTe a
b

8 532 CdTe/CdS

CdTe/CdS8.25
TCOSnO2ITOCd2SnO4
CdSCdS
CdSTCOTCOCIGS
CdTe380450oC
CdCl1530

Tep CuCu

42
 8.25 CdTe/CdS

16.5%CdTe/CdS8.25TCO
Cd2SnO4Zn2SnO4CdS
CdS:OCdSCdTe
81

8533 CdTe/CdS

CdTe/CdS 1820
16.5%CdTe/CdS Voc = 845.0 mV, Jsc = 25.88 mA/cm2, FF =
75.51%GaAs
CdTe/CdS
1CdTeCdTe
23
CdTeIIVI
CdS1-yTey 1.492.45eV, CdTe
Hg1-xZnxTe0.15 -
2.25eVCdTeCu(InGa)Se2 CdTe
/Cu(InGa)Se2 2582
CdTe
CSSVTDEDScreen8.9
42005CdTe 50MW2006
75MWFirst Solar2005CdTe 21 MW
200640 MW70 MW CdTe 0.72m2
60W8.3%83

43
 8.11 CdTe/CdS

CdTe Cu CdTe
84
Cd

CdTe Cd
CdTe
Cd 2030 Cd

Te Te 200
CdTe CdTe 1.5GW

854

DSSCPSC

1960 85 70TiO2
Ru1991Graetzel
TiO2Ru
868788
11.1%89 100cm2 8.4%90

8541

8.26/SnO2
TiO2TiO2TiO2450500oC
10TiO25070
1000

GraetzelRuRuL2(NCS)2 RuL(NCS)3
RuL2(NCS)2 N3400 nm 800 nm

44
RuL(NCS)3900nmRu
TiO2TiO2
8.27 N3TiO2101
I-/I3-TiO2

Pt200nmTCO

Surlyn

8.26

8.27 N3TiO2101

8542

45
 8.28 pn

1 TiO2
2 SS*TiO2

8.29
HOMO
LUMORu d-
*
3 TiO2TCO

4 S I I I3

(8.30)

5 I3 I

(8.31)

8.28

pn

8.38
LUMOHOMOpn

46
EgpnLUMO
TiO2E1HOMOI-/I3-E2
(8.20)pn

pn(8.2)
TiO2
I-/I3-TiO2
I-/I3-

HOMO
LUMOHOMOHOMO
I-HOMOI3-I3-I-
HOMOI-/I3-
TiO2
TiO2TiO2TiO2/
TiO2I3-

8.32

I0KetI3 TiO2n0

8.33
I0 pn(8.4)

8.34
Iinj

(8.35)
0 8.38 N3
QEN3800 nm
950 nmQE80TCO
90100
TiO2/I0TBP
TiO2TiO2/
8.38 TiO2I-V
10.4%91

47
 8.38 N3

8.39 TiO2I-V

8543

TiO2TiO2
11.1%
H. Arakawa WCPEC-4 100cm2 8.4AM1.5
1000W/m290PVSEC-15, 2246 cm25.9
AM1.5874W/m2, 500W92

N3
7.3% 931Oligomer 1
8.194

48
 Ru
-*
Kohjiro HaraTiO2NKX-2883
7.6%95
35oC
7000100001000W/m2
3959697
MgI2
150098
80oC

49
 86

M. Green 99

Shockley-Queisser 32.8%

861

Ta
1 8.36
Ts
TsTaTs6000KTa300K95.0
Carnot
:
4
4T 1T
1 a + a 8.37
3 Ts 3 Ts
TsTa93.3Landsberg100
Eg
Voc Vbi Eg8.6
Jsc /q 1 Eg
Nph(Eg) Eg

E g N ph ( E g )
max = 8.11
I0
AM0 AM1.5 max Eg 8.40
Eg Eg
Eg

AM0 AM1.5 43.7

49.1% P. Rappaport AM0 101
AM0 1.07eV AM1.5
1.0-1.4eV 1.13eV 1.33eV

50
 0.6
AM1.5
0.5 AM0

0.4

Eff max
0.3

0.2

0.1

0
0 1 2 3 4 5
Band gap energy (eV)

8.40 AM0 AM1.5

Shockley-Queisser 11
8.41 ab 6000 K
AM0 cd AM1.5D
AM1.5G 6000 K
31.0 40.7% AM1.5G d
1.13eV 1.35eV 32.8%
AM1.5 8.40
1.12 eV 1.13eV 1.42 eV 1.33eV

C.Henry 102
ShockleyQueisser C.Henry AM1.5 31
1.33eV AM1.5
ShockleyQueisser

51
 8.41 Shockley-Queisser ab
6000 K cd
AM1.5D AM1.5G

862

Landsberg Shockley-Queisser 93.3

32.8
Eg

8621

pn

8.11 AM1.5 3
51.5% 62.5%5 58.0% 70.0%
86.8%
III-V
AM1.5GaInP/GaAs/GaInAs
1037.9%27GaInP/GaInAs/Ge236
3929

52


M.Green
103SiO2/SiOx
PECVDSiO2/SiOx x12SiOx
SiSiO28.42

8.42 SiO2/SiOxSI3N4/SiyNx SiC/SiCx (a)

Si (b)

SiOxSiSiO2
104 SiO2Si105
SiO2/SiOxxSi
2.0eV
1.5eV1.1eV
SI3N4/SiyNx SiC/SiCx
SI3N4 SiCSiO2

TiOx
106TiOxxx1.0691.087
TiOxAndersonx12
TiOx0 eV3.5 eVTiOx
x8.43
TiOx/TiOy/TiOz, , x>y>z TiO2

53
 8.43 TiOx/TiOy/TiOz

Si GaAs

8622 TPV

8.7/
9095
100

TPV

T
4
T
= 1 r 4 1 a 850
T s T r
Tr Ts = 6000 K Ta = 300 K
Tr 2544K 85.4%[40]
868
V.Andreev TPV 107
8.44 TPV
4000 1400-2000K
GaSb TPV TPV

TPV 20TPV 29

54
 8.44

8623

1.95 eV
0.71 eV 63.2%108
0.8 eV 1.54 eV54.5%

IIIVIVb /
Ti GaP TixGa1-xP (x = 0.25-0.3125) 109
Ti CuGaS2 Cu4TiGa3S8 110
/

IIVI
/ h1
8.45 h2
HOMO1 LUMO1
LUMO1 LUMO2 h3
SUMO2

55
 8.45

SUMO2 HOMO1
LUMO1 LUMO2

IIVI
ZnSe/F16ZnPc F16ZnPc
111

8624

-
-
Si 4eV3.6Eg,
105% 4.8eV4.4Eg 125%
,
,

-

R.Ellingson 112 PbSe PbS 300%

4 3
-

8625

56


InN N In In
Si
8.46 Si Si

5.7%/

8.46 Si

87

120,000 13 4.1x1020 /

3 46
10 0.38%
1993 GENESIS 113

10807 4 2000

10

15 20CIGS 10Si
8 13 Si
10

57


20 2819, 2643

8.47
70
1510%
Fraunhofer
GaInP/GaInAs96cm2
18.2%114
/

8.47

58


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