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Abstract | The issues in scaling the Complementary Metal Oxide Semiconductor (CMOS)
transistors in sub-100 nm regime are reviewed. The non-classical CMOS device technologies
such as high-k gate dielectrics, strained silicon channel, Silicon On Insulator, multi-gate
transistors, and metal gate electrodes, are discussed in detail. These techniques are expected to
scale the CMOS devices to an ultimate limit of 5 nm physical gate length. The system level
Associate Professor, issues of growing power dissipation and increasing device to device variability in the chips
Department of Electrical should be overcome for the successful realization of complex systems in nanoelectronics
Communication
Engineering, Indian
technologies. A brief overview of the non-CMOS memory and logic device architecture is
Institute of Science, provided. The opportunities in building hybrid systems on chips by combining sensors and
Bangalore-560012
navakant@ece.iisc.ernet.in
actuators along with the compute and storage functions on a single chip are described.
Journal of the Indian Institute of Science VOL 87:1 JanMar 2007 journal.library.iisc.ernet.in 61
REVIEW Navakanta Bhat
62 Journal of the Indian Institute of Science VOL 87:1 JanMar 2007 journal.library.iisc.ernet.in
Nanoelectronics Era : Novel Device Technologies Enabling Systems on Chips REVIEW
Performance
and the electrons will be tunneling from the gate
Novel Materials and electrode). Typically, the conduction across the
Device
Devicestructures
structures
SiO2 insulator layer is negligible due to very large
Silicon CMOS
band offset (3.1eV) between the conduction
band of gate/substrate and the conduction band
1960 2000 2020
Traditional Scaling Path (shrinking feature size) of the oxide. However, for an ultra-thin gate
Technology Drivers: Memory and Logic Technology Drivers: Memory and Logic oxide with T ox < 5 nm, carriers can quantum
Materials : Silicon and its derivatives Materials : Silicon coexisting with variety mechanically tunnel through the oxide and result
such as SiO2, Si3N4 etc. of materials to enable new devices
Device Architecture: Non Classical CMOS
in large gate leakage current. Furthermore, the
Device Architecture: Classical CMOS
(short term) and Non CMOS (long term) tunneling probability increases exponentially with
decrease in T ox . Figure 6 shows the gate leakage
current density for different gate oxide thickness.
electrical field set-up by the gate to source voltage The gate leakage current density of 100 A/cm2
Fermi level: The Fermi level is (Vg s ), and not by the lateral electric field set-up by indicates that, the transistor with 50 nm gate length
the top of the collection of the drain to source voltage (Vds ). In other words, results in a gate leakage of 50 nA per unit micron
electron energy levels at zero
Vds should only influence the drift velocity of the width (50 nA/m). This is more than 20% of
degree kelvin. In a
semiconductor, the position carriers in the channel. However, with decreasing the total off state leakage current budget of the
of the Fermi level in the L g , drain and source electrodes come into close transistor. Hence it is not possible to scale T ox any
energy band-gap is governed proximity. Hence, the drain electric field starts further. This calls for replacement of SiO2 with an
by the relative concentration
influencing the height of the barrier at the source for alternate gate insulator which has higher dielectric
of electrons and holes.
the injection of free carriers into the channel. As a
constant (k). The high-k dielectric of thickness
result, the drain electric field starts competing with
of T k is equivalent to effective oxide thickness of
the gate electrode to gain control over the channel
EOT = 3.9 k T k , where SiO2 dielectric constant
conductivity. The transistor will no longer be an
ideal gate controlled device. This phenomenon is is 3.9. Hence, it is possible to use thicker insulator
referred to as Short Channel Effect (SCE). The and reduce the gate tunneling current (Fig. 7),
immediate consequence of SCE is lowering of while maintaining capacitive coupling of the gate
the threshold voltage (Vt ) of the transistor with electric field to the channel that is equivalent to
decreasing L g as shown in Fig. 4. The short channel thinner oxide. Table 2 lists the properties of some
transistor needs to be designed properly so that potential gate insulators that are being explored.
Vt roll-off is controlled to yield the required value In addition to high-k, the insulator should also
at the minimum L g for a given technology. In a have other important properties such as very good
classical CMOS, this has been typically achieved by a interface with Si resulting in minimal interface
combination of decrease in SiO2 gate insulator traps, thermodynamic stability, large band gap and
thickness to increase the vertical electric field band offset with Silicon. Among the various high-k
coupling to the channel, increase in substrate dielectrics, HfO2 and some of the rare earth metal
doping concentration to decrease the penetration of oxides are very promising at this time [1014]. The
drain electric field towards source, and decrease in
high-k gate dielectrics are expected to be introduced
source/drain junction depths to reduce the coupling
in the 45 nm CMOS technology node.
volume. However, these techniques will not be
sufficient to scale the device in the nanoelectrronics
era. Several non-classical approaches are required in 2.1.2. Transport enhanced FET
the immediate future to extend the scalability of The increase in substrate doping concentration
CMOS architecture. Table 1 summarizes the overall to suppress short channel effects has adversely
projections of nanoelectronics device technology affected the carrier mobility in the MOSFET
and the corresponding chip performance for the channel. Fig. 8 shows the electron mobility in the
high end microprocessor. channel of NMOS transistor for different technology
Journal of the Indian Institute of Science VOL 87:1 JanMar 2007 journal.library.iisc.ernet.in 63
REVIEW Navakanta Bhat
Table 1: Projected technology nodes from International Technology Roadmap for Semiconductors. The technology nodes are scaled by a factor of 0.7,
corresponding to doubling of device density (except the year 2020). Note that the transistor size in any given technology node is significantly smaller
than the node nomenclature.
nodes [15]. The significant decrease in mobility of source/drain regions. This induces a compressive
the scaled device is due to the increased impurity stress in the channel due to the lateral confinement
scattering in the channel, which gets worse with from the two directions of the channel, leading to
increased doping concentration. This necessitates a enhanced hole mobility.
new class of non-classical CMOS transistors, namely The other strain engineering technique relies
the transport enhanced FETs. The technique relies on gate stack capping with appropriate material
on material engineering to enhance the channel to induce stress in the underlying channel region.
mobility of the carriers. This class of devices includes For example, capping the gate stack with Si3 N4
strained-silicon MOSFETs and hetero epitaxially can induce tensile stress and enhance the electron
grown Germanium (Ge) or Gallium Arsenide mobility. The isolation oxide in shallow trench
(GaAs) channel MOSFETs on the silicon substrate. region has also been utilized to induce strain in the
The strained-silicon channel MOSFETs rely channel region. One of the issues in utilizing the
on a very well known phenomenon that the strain engineered MOSFETs in building the chips
carrier mobility in silicon can be enhanced by is to ensure that the NMOS and PMOS regions
introducing stress in the silicon lattice. The tensile in the chip get different processing steps to create
strain enhances the electron mobility and the the respective channel regions. The strained silicon
compressive strain enhances the hole mobility. channel MOSFETs have been successfully integrated
Several techniques have been employed for the with channel mobility improvement of more than
strain engineering in MOSFET. Figure 9 illustrates 30% [16,17]. The strained silicon MOSFETs are
the strain engineering using Si-Ge. The inter-atomic going through continuous improvement, and this
distance in Ge (2.45 nm) is more than that of Si technique will help scale the CMOS technology
(2.36 nm) and the technique exploits this difference for the next 5 years or so. However, more radical
to create tensile or compressive strain. Si-Ge thin techniques of transport enhancement will be
film is grown on a silicon substrate by grading the required beyond that. Some of the potential
Ge concentration from 0 to about 30%. This graded candidates include Ge and GaAs MOSFETs on
layer typically contains the defects and ensures that thin films grown hetero-epitaxially on the silicon
the defect-free films can be grown on top. Then substrate. The electron mobility in Ge is more
Si0.7 Ge0.3 thin film is grown with an effective lattice than twice that of silicon and the hole mobility
constant higher than that of silicon. The thin silicon is about four times that of silicon. Similarly the
channel layer (about 10 nm) is epitaxially grown on electron mobility in GaAs is about six times that of
Si0.7 Ge0.3 , thus leading to a strained silicon channel. Silicon. Historically, Ge and GaAs have never been
A very important consideration in creating this amenable for building MOSFETs. While Si has an
structure is to ensure that the strained silicon film is excellent insulator in terms of SiO2 , which results
defect-free, so that very high channel mobility can in an ideal interface with minimal trap density, Ge
be obtained. A variation of this technique has been and GaAs did not have this advantage. But now
used for PMOS transistor to create compressive that SiO2 is being replaced with alternate high-k
strain. The source/drain region is recessed into the gate dielectrics, similar technique can potentially be
substrate and the Si-Ge is selectively grown in the employed for Ge and GaAs as well. There are recent
64 Journal of the Indian Institute of Science VOL 87:1 JanMar 2007 journal.library.iisc.ernet.in
Nanoelectronics Era : Novel Device Technologies Enabling Systems on Chips REVIEW
Table 2: Comparison of potential high-k dielectrics with SiO2 thick insulator. In addition, C i is also significantly
lower, since the device density in SOI is typically
Material Dielectric constant (k or r ) Bandgap (eV) Conduction band offset (eV)
higher than the bulk technology. This is because
SiO2 3.9 9 3.15 the isolation between the transistors in the SOI
Si3 N4 7.9 5.3 2.4 technology is excellent because the transistors are in
Al2 O3 10 8.8 2.8 an island surrounded by an insulator. Hence the
latch-up issue is non existent in SOI, thus enabling
HfO2 1630 4.56 1.5
very close placement of neighbouring transistors,
ZrO2 1216 5.8 1.5 leading to shorter interconnect lengths between any
TiO2 80170 3.05 0 two nodes in a circuit. The SOI technology typically
ReO2 * 1230 2.55.5 13 offers a performance improvement equivalent to one
generation of bulk technology (i.e. n t h generation
*ReO2 : Rare earth metal oxides of SOI is equivalent to (n + 1) t h generation of
bulk) [19,20]. There are two variants of SOI
reports with high quality Germanium devices built device technologies: Partially Depleted SOI (PDSOI)
using high-k gate dielectrics [18]. These techniques and Fully Depleted SOI (FDSOI). In PDSOI, the
will potentially lead to enhanced silicon CMOS thickness of the silicon film is typically 100 nm
technologies, while continuing to exploit the silicon or more so that only part of the entire silicon
infrastructure. body is depleted when the transistor is turned
on. In contrast, the silicon film thickness for
2.1.3. Silicon On Insulator (SOI) FDSOI is typically 50 nm or less so that the
The SOI technology utilizes a very thin silicon entire silicon body is depleted when the transistor
film, on top of an insulator (typically SiO2 ), is turned on. Each of these devices have their
to build devices. The difference between the own advantages and disadvantages. The PDSOI
propagation delay: The time construction of bulk Silicon devices and the devices are relatively easy to fabricate. However,
required for a change in SOI devices is schematically shown in Fig. 10. they have a very unique problem of floating body
digital logic state at the input
node of a logic gate to
The insertion of SiO2 underneath the active induced threshold voltage (Vt ) instability i.e. the Vt
appear as the corresponding Silicon devices offers some unique advantages. In becomes a strong function of the charge stored in the
CMOS circuits, the propagation delay ( = CV I )
change in logic state at the floating body. This requires very challenging circuit
output node.
and the dynamic power (P d = CV 2 f ) are directly design techniques because the circuit behaviour
proportional the load capacitance (C) which is will have history dependence. On the other hand
charged and discharged to change the logic states. FDSOI devices have challenging fabrication process
The load capacitance consists of three components: requirements due to thin Silicon body. However
dynamic power: The power
dissipated in switching the the gate capacitance of the driven gate (C g ), they do not suffer from Vt instability. In addition
output digital logic state of a the source/drain capacitance of the driving gate FDSOI devices offer a very good platform for more
logic gate. (C ds ), and the interconnect capacitance (C i ) of exotic non-classical CMOS transistors, namely the
the line connecting these two nodes. In the SOI multi-gate MOSFETs.
technology C ds is almost equal to zero, since the
source/drain regions are placed directly on top of the
Figure 3: The cross section of NMOS transistor and typical dimensions in 65 nm CMOS technology.
Lg
n+ Poly
Gate Poly-Si gate length, Lg 50 nm
Journal of the Indian Institute of Science VOL 87:1 JanMar 2007 journal.library.iisc.ernet.in 65
REVIEW Navakanta Bhat
2.1.4. Multi Gate FETs of the devices and circuits is not compromised. The
The conventional technique of increasing the scaling of the supply voltage also necessitates the
substrate doping concentration to suppress the short scaling of the Vt , since the speed of the CMOS
channel effect cannot be continued indefinitely. circuit depends on the drive current available from
This is because the leakage at the drain/source to the transistor which is proportional to (V dd V t ).
substrate junction due to tunneling will adversely This has resulted in an exponential increase in
affect the transistors performance. An efficient off state current of the transistor over the last few
technique to restore the gate control of the channel, technology generations. This is because the sub-
without increasing the substrate doping, is essential. threshold conduction in a MOSFET is essentially
The scaling of MOSFETs has also been accompanied governed by the sub-threshold slope (S) which is
by the scaling of the operating voltages (V dd ). This a non-scalable quantity [21], as shown in Fig. 11.
is essential to ensure that the electric fields in the For any given V t the drive current can also be
MOSFET are acceptable and the long term reliability enhanced by preventing the mobility degradation.
Hence, it is desirable to create a transistor with
virtually intrinsic channel doping, while ensuring
Figure 4: V t of NMOS decreases in the short the adequate gate control of the channel. These
channel regime. requirements are the motivation for creating muti-
gate FETs which include double-gate FET, tri-gate
FET, Fin-FET and surround-gate FET [2224].
By providing additional gates, the voltage on the
gate can effectively couple to the channel thereby
enhancing the FET performance. Figure 12 shows
the typical structure of FinFET, wherein the gate
wraps around the channel region. Fin-FETs with
very good characteristics have been experimentally
demonstrated. However, the manufacturable process
integration has a long way to go. All these multi-gate
devices require an ultra-thin silicon channel region
which can be efficiently controlled.
Figure 5: (a) Gate oxide thickness trend as a function of technology scaling; (b) Energy band diagram for
NMOS with positive gate voltage.
Tox
(a) (b)
Tox (nm)
TUNNELING
Ec
1.5
Ef
Ev
Ef
1.0
50 100
Lg (nm)
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REVIEW Navakanta Bhat
0.35m
300 defining the CNT based NMOS and PMOS
0.25m
250 transistors in giga-scale by growing the CNTs at
precise locations on the chip should be resolved.
200 The Resonant Tunneling Transistor (RTT) is
0.18m another alternative with a negative differential
150
resistance and very high switching speed [32].
100
Single Electron Transistors (SET) are structurally
0.09m
50 similar to the conventional MOSFET except that
0.12m
0 -0.2
the source to substrate and drain to substrate
-0.1 0 0.1 0.2 junctions are tunnel junctions and the channel
Towards Source Towards Drain
Distance along the channel (m) is ideally formed by a quantum dot [33]. A SET
can be potentially used to represent a binary bit
by a single electron, but alternate architectures
to modulate the resistance of memory cell [28]. such as Cellular Nonlinear Networks (CNN) will
Polymer memory relies on a memory cell with be required to realize such systems. Another class
Cellular Nonlinear Networks organic-metal-organic film stack, whose resistance of transistors exploits the spin of the electrons,
(CNN): Cellular neural can be programmed into high and low values leading to a field that is popularly referred to as
networks (CNN) are systems to store information [29]. Molecular memory is Spintronics. There are several concepts proposed
based on a parallel
computing architecture with
a very broad class of memory cell, which stores to build such devices. The spin MOSFET is a hybrid
an array of weak compute information on a single molecule connecting two
device which relies on gate control (electro static
elements, wherein the electrodes, by modulating the conductivity of the
communication is allowed molecule [30]. It is expected that some of these channel control) and drain control (spin dependent
only between the
alternate memory structures, especially the first scattering at the drain). However, this requires the
neighbouring compute units.
three options, may be integrated along with the efficient injection of spin polarized electrons into the
CMOS logic some time in the next decade. channel, necessitating half-metallic-ferromagnetic
contacts at the source and drain [34]. There are
2.2.2. Non-CMOS Logic architectures other concepts such as spin-torque transistor [35]
This class of devices attempts to realize the and spin-gain transistor [36]. However, all these
fundamental element of a Logic block, the transistor, concepts are still far from surpassing the capability
of the ultimately scaled CMOS.
The Optoelectronics or Photonics proposes
Figure 9: Strained silicon NMOSFET structure with tensile strain in the
channel.
to build digital computers by using photons for
information processing and transmission at the
speed of the light [37]. However, the component
size will be limited by the diffraction phenomenon.
Furthermore, the compatibility with the existing
computer architecture is unclear. On the other hand,
10 nm Strained Si
n+ n+
the integration of optical interconnects for chip level
wiring in the CMOS technology is considered to be
more promising. Organic electronics or plastic
Relaxed Si 0.7 Ge 0.3 electronics builds the transistors on organic thin
film substrate such as pentacene [38]. These devices
are extremely slow due to low channel mobility,
Relaxed Graded Si1-xGex
x = 0 to 0.3
and hence they do not compete with the ultimate
CMOS in building the conventional compute
architectures. However, these devices are expected to
Silicon substrate complement the CMOS technology and extend
the electronics applications into new domains
68 Journal of the Indian Institute of Science VOL 87:1 JanMar 2007 journal.library.iisc.ernet.in
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Nanoelectronics Era : Novel Device Technologies Enabling Systems on Chips REVIEW
23. H. Shang, Investigation of FinFET devices for 32nm Embedded Computing Systems (TECS), p. 321, 2006.
technologies and beyond, Proceedings of VLSI Technology 46. Marcel J. M. Pelgrom, Hans P. Tuinhout and Maarten Vertregt,
Symposium 2006 Transistor Matching in Analog CMOS Applications, IEDM
24. H. Lee, Sub-5nm All-Around Gate FinFET for Ultimate Tech. Dig., 1998, pp. 915918.
Scaling, Proceedings of VLSI Technology Symposium 2006 47. H. C. Srinivasaiah and Navakanta Bhat, Mixed Mode
25. P.F. Hsu, Advanced Dual Metal Gate MOSFETs with High- Simulation Approach to Characterize the Circuit Delay
k Dielectric for CMOS Application, Proceedings of VLSI Sensitivity to Implant Dose Variations, IEEE Transactions on
Technology Symposium 2006 CAD of Integrated Circuits and Systems, Vol. 22. No.6, June
26. S. Lai, Current status of the phase change memory and its 2003.
future, IEDM Technology Digest, 2001 48. H. C. Srinivasaiah and Navakanta Bhat, Monte Carlo Analysis
27. Y.M. Kang, World Smallest 0.34m2 COB Cell 1T1C 64Mb of the Implant Dose Sensitivity in 0.1m NMOSFET, Solid
FRAM with New Sensing Architecture, and Highly Reliable State Electronics, Volume 47, pp. 1379 1383, Aug. 2003.
MOCVD PZT Integration Technology, Proceedings of VLSI 49. B.P. Harish, Mahesh B. Patil and Navakanta Bhat, On A
Technology Symposium 2006 Generalized Framework for Modeling the Effects of Process
28. W.J. Gallagher, S.S.P. Parkin, Development of the Magnetic Variations on Circuit Delay Performance To appear in IEEE
Tunnel Junction MRAM at IBM : From first junctions to 16 Transactions on Computer Aided Design of Integrated Circuits
MB MRAM Demonstrator Chip, IBM Journal of Research and Systems
and Development, January 2006. 50. R. Singh and N. Bhat, An Offset Compensation Technique for
29. J. He, J., et.al. Three-terminal organic memory devices, Latch Type Sense Amplifier in High Speed Low Power SRAMs,
Journal of Applied Physics, 97, 2005. IEEE Transactions on VLSI Systems, pp. 652657, June 2004.
30. W. Wu, et.al. One-kilobit cross-bar molecular memorycircuits 51. N. Bhat and S. Mukherjee, Yield and Speed Enhancement of
at 30-nm half-pitch fabricated by nanoimprint lithography, Semiconductor Integrated Circuits using Post Fabrication
Applied Physics A. 80.6, p. 1173, 2005. Transistor Mismatch Compensation Circuitry, US patent
31. Lin, Y., et.al. Novel carbon nanotubes FET design with tunable #6934200 , 2005.
polarity, IEDM Technical Digest p.687, 2004. 52. S. Narendra, A. Keshavarzi, B. A. Bloechel, Shekhar Borkar,
32. Matsuo, N., H. Kihara, Y. Takami. Application of advanced and Vivek De, Forward Body Bias for Microprocessors in 130-
metal-oxide-semiconductor transistor in next generation, nm Technology Generation and Beyond, IEEE J. of Solid-State
silicon resonant tunneling MOS transistor, to new logic circuit, Circuits, p. 696, May 2003.
Solid State Electronics, p.1969, 2003. 53. A. Gupta and N. Bhat, Asymmetric Cross-Coupled
33. Park, K-S., et al. SOI Single-electron transistor with low RC Differential Pair Configuration to Realize Neuron Activation
delay for logic cells and SET/FET hybrid ICs, IEEE Trans. Function and its Derivative, IEEE Transactions on Circuits
Nanotechnol. 4.2, p. 242, 2005. and Systems Part II: Express Briefs, Vol. 52, No. 1, pp. 10-13,
34. Sugahara, S. and M. Tanaka, A spin metaloxide January 2005
semiconductor field-effect transistor using half-metallic- 54. A. Gupta and N. Bhat, Back-Gate Effect to Generate
ferromagnet contacts for the source and drain, Applied Physics Derivative of Neuron Activation Function, Analog Integrated
Letters, 84.13, pp. 23072309, 2004). Circuits and Signal Processing, Kluwer 41 (1), pp. 89-92,
35. Bauer, G. E. W., A. Brataas, Y. Tserkovnyak, B. J. van Wees. October 2004
Spin Torque Transistor, Applied Physics Letters, p.3928 , 2003. 55. Heath, J. R., et al. A Defect Tolerant Computer Architecture:
36. Nikonov, D. E., G. I. Bourianoff. Spin-Gain Transistor in Opportunities for Nanotechnology, Science, p. 1716, 1998.
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M. Lutwyche, H. Rothuizen, R. Stutz, R. Widmer, G. Binnig,
H. Rohrer, and P. Vettiger. VLSI-NEMS Chip for Parallel Navakanta Bhat Navakanta Bhat received
AFM Data Storage, Sensors and Actuators, pp. 100107, 2000. his B.E. in Electronics and Communication
40. Quantum Information Science and Technology Roadmapping from University of Mysore in 1989, M.Tech.
Project, http://qist.lanl.gov/ 2005. in Microelectronics from I.I.T. Bombay in
41. Chen, Y., D. A. A. Ohlberg, X. Li, D. R. Stewart, R. S. Williams, 1992 and Ph.D. in Electrical Engineering from
J. O. Jeppesen, K. A. Nielsen, J. F. Stoddart, D. L. Olynick, E. Stanford University, Stanford, CA in 1996.
Anderson. Nanoscale molecular-switch devices fabricated by Then he worked at Motorolas Networking and
imprint lithography, Applied Physics Letters. p.1610, 2003. Computing Systems Group in Austin, TX until
42. J.T. Kao, A.P.Chandrakasan, Dual-threshold voltage 1999. At Motorola he worked on logic technology development
and he was responsible for developing high performance transistor
techniques for low-power digital circuits, IEEE Journal of
design and dual gate oxide technology. He joined the Indian
Solid-State Circuits, p. 1009, 2000.
Institute of Science, Bangalore in 1999 where he is currently an
43. C. Long and L. He, Distributed sleep transistor network Associate Professor in the Electrical Communication Engineering
for power reduction, IEEE Transactions on Very Large Scale department. His current research is focused Nano-CMOS
Integration (VLSI) Systems, p. 937, 2004. technology and Integrated CMOS-MEMS sensors. The work
44. Anantha P. Chandrakasan, Samuel Sheng, and Robert W. spans the domains of process technology, device design, circuit
Brodersen, Low-Power CMOS Digital Design, IEEE Journal of design and modeling. He has several research publications in
Solid-State Circuits, p. 473, 1992. international journals and conferences and 3 US patents to his
45. S. Hua, Gang Qu, and S. S. Bhattacharyya, Energy-efficient credit. He has received the Young Engineer Award (2003) from the
embedded software implementation on multiprocessor system- Indian National Academy of Engineering. He is also the recipient
on-chip with multiple voltages, ACM Transactions on of the Swarnajayanti fellowship (2005) from the Department of
Journal of the Indian Institute of Science VOL 87:1 JanMar 2007 journal.library.iisc.ernet.in 73
REVIEW Navakanta Bhat
Science and Technolgy, Govt. of India and Prof. Satish Dhavan society (2005). He has been on the program committees of several
award (2005) from the Govt. of Karnataka. He was the founding international conferences. He was the technical program chair
chair of the IEEE Electron Devices and Solid-State Circuits society, for the international conference on VLSI design and Embedded
Bangalore chapter which was recognized as the Outstanding systems (2007). He is a Distinguished Lecturer of the IEEE Electron
Chapter of the Year by the IEEE SSC society (2003) and IEEE EDS Devices Society.
74 Journal of the Indian Institute of Science VOL 87:1 JanMar 2007 journal.library.iisc.ernet.in