EEC-751

CAD OF ELECTRONICS LAB

PSPICE Experiments

1. Transient Analysis of BJT inverter using step input.

2. DC Analysis (VTC) of BJT inverter with and without parameters.

3. Transient Analysis of NMOS inverter using step input.

4. Transient Analysis of NMOS inverter using pulse input.

5. DC Analysis (VTC) of NMOS inverter with and without parameters.

6. Analysis of CMOS inverter using step input.

7. Transient Analysis of CMOS inverter using step input with parameters.

8. Transient Analysis of CMOS inverter using pulse input.

9. Transient Analysis of CMOS inverter using pulse input with parameters.

10. DC Analysis (VTC) of CMOS inverter with and without parameters.

11. Transient & DC Analysis of NOR Gate inverter.

12. Transient & DC Analysis of NAND Gate.

VHDL Experiments

1. Synthesis and simulation of Full Adder.

2. Synthesis and Simulation of Full Subtractor.

3. Synthesis and Simulation of 3 X 8 Decoder.

4. Synthesis and Simulation of 8 X 1 Multiplexer.

5. Synthesis and Simulation of 9 bit odd parity generator.

6. Synthesis and Simulation of Flip Flop (D, and T).

 INTRODUCTION TO ORCAD

Objectives:
To Be familiar with the Orcad simulation.

To be familiar with types of analysis in Orcad program.

To make analysis to some examples on each analysis.

Equipments:
Computer Orcad software program.

Introduction to Orcad:
SPICE is a powerful general purpose analog and mixed-mode circuit simulator that is
used to verify circuit designs and to predict the circuit behavior. This is of particular
importance for integrated circuits.

Simulation Program for Integrated Circuits Emphasis.

SPICE can do several types of circuit analyses. Here are the most important ones:
1 Non-linear DC analysis: calculates the DC transfer curve.
2 Non-lineartransient and Fourier analysis: calculates the voltage and current as a function
of time when a large signal is applied; Fourier analysis gives the frequency spectrum.
3 Linear AC Analysis: calculates the output as a function of frequency. A bode plot is
generated.
4 Noise analysis
5 Parametric analysis
6 Monte Carlo Analysis

In addition, PSpice has analog and digital libraries of standard components (such as NAND, NOR,
flip-flops, MUXes, FPGA, PLDs and many more digital components ). This makes it a useful tool
for a wide range of analog and digital applications.
All analyses can be done at different temperatures. The default temperature is 300K.
The circuit can contain the following components:
1 Independent and dependent voltage and current sources
2 Resistors
3 Capacitors
4 Inductors
5 Mutual inductors
6 Transmission lines
7 Operational amplifiers
 8 Switches
9 Diodes
10 Bipolar transistors
11 MOS transistors
12 JFET
13 MOSFET
14 Digital gates

Algorithm of simulating a circuit

The following figure summarizes the different steps involved in simulating a circuit with Capture
and PSpice. We'll describe each of these briefly through a couple of examples.

Figure 1: Steps involved in simulating a circuit with PSpice.

The values of elements can be specified using scaling factors (upper or lower case):

T or Tera (= 1E12);
G or Giga (= E9);
MEG or Mega (= E6);
K or Kilo (= E3);
M or Milli (= E-3); U or Micro (= E-6);
N or Nano (= E-9);
P or Pico (= E-12)
F of Femto (= E-15)

Types of analysis in Orcad:

1) BIAS Point or DC analysis
1 1. Draw the circuit shown in figure 2 on the capture window
2 2.With the schematic open, go to the PSPICE menu and choose NEW SIMULATION
PROFILE.
3 3. In the Name text box, type a descriptive name, e.g. Bias.
4 4. From the Inherit From List: select none and click Create.
 5 5. When the Simulation Setting window opens, for the Analyis Type, choose Bias Point and
click OK.
6 6. Now you are ready to run the simulation: PSPICE/RUN
7 7. A window will open, letting you know if the simulation was successful. If there are errors,
consult the Simulation Output file.
8 8. To see the result of the DC bias point simulation, you can open the Simulation Output file
and it will be as shown below.
9

Results of the Bias simulation displayed on the schematic.

2) Transient Analysis
1 1. Draw the circuit as shown in figure
2 2. Insert the Vsin source from the library Source. Double click on the source and make the
following changes FREQ = 1000, AMPL = 1, VOFF = 0.
3 3. Set up the Transient Analysis: go to the PSPICE/NEW SIMULATION PROFILE.
4 4. Give it a name (e.g. Transient). When the Simulation Settings window opens, select "Time
Domain (Transient)" Analysis. Enter also the Run Time. Lets make it 5 ms(5 periods since
FREQ = 1000). For the Max Step size, you can leave it blank or enter 10us.
5 5. Run PSpice.
6 6.The results is shown in figure
1.0V

0.5V

0V

-0.5V

-1.0V
0s 0.5ms 1.0ms 1.5ms 2.0ms 2.5ms 3.0ms 3.5ms 4.0ms 4.5ms 5.0ms
V(D1:2) V(V4:+)
Time

3) AC Sweep Analysis:
The AC analysis will apply a sinusoidal voltage whose frequency is swept over a specified range. The
simulation calculates the corresponding voltage and current amplitude and phases for each frequency.
When the input amplitude is set to 1V, then the output voltage is basically the transfer function. In
contrast to a sinusoidal transient analysis, the AC analysis is not a time domain simulation but rather a
simulation of the sinusoidal steady state of the circuit. When the circuit contains non-linear element
such as diodes and transistors, the elements will be replaced their small-signal models with the
parameter values calculated according to the corresponding biasing point.
 1 1. Create a new project and build the circuit as shown in figure
2 2. For the voltage source use VAC from the Sources library.
3 3. Make the amplitude of the input source 1V.
4 4. Create a Simulation Profile. In the Simulation Settings window, select AC Sweep/Noise.
5 5. Enter the start and end frequencies and the number of points per decade. For our example we
use 0.1Hz, 10 kHz and 11, respectively.
6 6. Run the simulation
7 7. In the Probe window, add the traces for the output voltage.
8 8. The results is as shown in figure

600mV

400mV

200mV

0V
100mHz 300mHz 1.0Hz 3.0Hz 10Hz 30Hz 100Hz 300Hz 1.0KHz 3.0KHz 10KHz
V(R4:2)
Frequency

4) DC Sweep Analysis:
The DC sweep is used to draw the voltage transfer characteristic
(VTC) between output and input.
1) we connect the circuit as shown in figure
2) from dc sweep analysis we choose primary sweep and we
put the name of the source V1 and start value (0),end value
(12) and increment (0.1).
3) Then choose secondary sweep and put the name of the current source I2 and start
value (-4u),end value (12u) and increment (4u).
4) we put the current marker above R2 as shown.
5) The result will be as shown in the figure 8.

Output Current
2.0mA

1.0mA

0A

-1.0mA
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V 11V 12V
-I(R2)
V_V1
EXPERIMENT :- 1

AIM:- Transient Analysis of BJT inverter using step input.

APPARATUS REQUIRED:- Multisim v.12.0/Orcad 16.

THEORY:- A BJT inverter is a simple CE switch as shown in Figure 1 (a). When the input voltage
Vi is LOW, the output voltage is VO is HIGH and vice-versa. Its voltage transfer characteristics are
such as shown in Figure 1 (b). The noise margins NM can be determined from the transfer
characteristics as follows: NMH=VOH VIH (Volts)
NML=VIL VOL (Volts)

The higher noise margins, the higher are the immunity of the logic gate to unwanted
signals(noise).

CIRCUIT DIAGRAM:-

R 2

1k
V

V3
5Vdc
Q 1
R 1

1k
V Q 2N 2222
V4
5Vdc

Figure 1 : The BJT inverter and its transfer characteristics

TRANSIENT ANALYSIS PROCEDURE:-

1. Draw the circuit as shown in figure
2. Insert the Vdc source from the library.
3. Double click on the components and place the value.
4. Set up the Transient Analysis: go to the PSPICE/NEW SIMULATION PROFILE.
5. Give it a name (e.g. Transient). When the Simulation Settings window opens, select "Time
Domain (Transient)" Analysis.
6. Enter the Run Time. Lets make it 10000us. For the Max Step size, you can leave it blank or enter
10u
7. Run PSpice.
OBSERVATIONS:-

Vin (Input Voltage in Volts) Vout (Output Voltage in Volts)

0V 5V

0.5 V 4.996 V
1.0 V 4.616 V
1.5 V 4.141 V
2.0 V 3.656 V
2.5 V 3.168 V
3.0 V 2.679 V
3.5 V 2.616 V
4.0 V 2.770 V
4.5 V 2.931 V
5.0 V 0.094 V

OUTPUT:

CONCLUSION:- Study of transient analysis of BJT Inverter using step input has been done.

EXPERIMENT :-2

 AIM: DC Analysis (VTC) of BJT inverter with parameters.

APPARATUS REQUIRED:- Multisim v.12.0/Orcad 16.

CIRCUIT DIAGRAM:-
R 2

1k
V

V3
5Vdc
Q 1
R 1

1k
V Q 2N 2222
V4
5Vdc

DC Sweep Analysis Procedure:

The DC sweep is used to draw the voltage transfer characteristic (VTC) between output and input.
1. we connect the circuit as shown in figure
2. Set up the DC Sweep: go to the PSPICE/NEW SIMULATION PROFILE
3. From dc sweep analysis we choose primary sweep and we put the name of the
source V4 and start value (0),end value (5V) and increment (0.1).
4. Place the Voltage marker above R1 and R2 as shown.
5. The result will be as shown below.

RESULT:-

EXPERIMENT:- 3

AIM:- Transient Analysis of NMOS inverter using step input.

THEORY:-For any IC technology used in digital circuit design, the basic circuit element is the
logic inverter. Once the operation and characterization of an inverter circuits are thoroughly
understood, the results can be extended to the design of the logic gates and other more complex
circuits.

N-type metal-oxide-semiconductor logic uses n-type metal-oxide-semiconductor field effect

transistors (MOSFETs) to implement logic gates and other digital circuits. NMOS transistors have
four modes of operation: cut-off (or sub-threshold), triode, saturation (sometimes called active), and
velocity saturation.

The n-type MOSFETs are arranged in a so-called "pull-down network" (PDN) between the
logic gate output and negative supply voltage, while a resistor is placed between the logic gate
output and the positive supply voltage. The circuit is designed such that if the desired output is low,
then the PDN will be active, creating a current path between the negative supply and the output.

CIRCUIT DIAGRAM:-

VDD
10V
M 1
VDD
XMM1
R1 BSS129
10k
0
V
V2
1 M 2 5Vdc

Q1 C1 L2082
20pF V1
V

2 5Vdc
V1 MTD4N20E 0
3.3 V
0
0

Figure 2:-Resistive load NMOS inverter Figure 3:-Depletion type NMOS inverter

TRANSIENT ANALYSIS PROCEDURE:-

1. Draw the circuit as shown in figure
2. Insert the Vdc source from the library.
3. Double click on the components and place the value.
4. Set up the Transient Analysis: go to the PSPICE/NEW SIMULATION PROFILE.
5. Place the Voltage marker
6. Give it a name. When the Simulation Settings window opens, select "Time Domain (Transient)"
Analysis.
7.Enter the Run Time. Lets make it 10000us. For the Max Step size, you can leave it blank or enter
10us. and Run PSpice.

OBSERVATIONS:-
 Sr.no. Input(V1) in volts Output(Vo) in
volts
1. 0V 9.99 V
2. 1V 9.991 V
3. 2V 9.992 V
4. 3V 9.993 V
5. 4V 1.876mV
6. 5V 936.64uV

RESULT:-

)( Result from fig3

EXPERIMENT:-4

AIM:- Transient Analysis of NMOS inverter using pulse input.

CIRCUIT DIAGRAM:- M 3

B S S 129

Transient Analysis Procedure: V

V 2
1. Draw the circuit as shown in figure O
O
F F T IM E = .5 u S D S T M 1
5V dc
N T I M E = . 5 u S CLK
M 2

2. Insert the digital clock and VDC D E LA Y =

L2082
S TA R TV A L = 0
from the library and give the value.
V
O P P V A L = 1

3. Set up the Transient Analysis: go to

the PSPICE/NEW SIMULATION
PROFILE.
4. Give it a name. When the Simulation 0
Settings window opens, select "Time
Domain (Transient)" Analysis.
5. Enter the Run Time. Lets make it 10000us. For the Max Step size, you can leave it blank or enter
10us. Place the Voltage marker.
6. Run PSpice.

OUTPUT:-

EXPERIMENT:-5

AIM:-DC Analysis (VTC) of NMOS inverter with PARAMETERS

CIRCUIT DIAGRAM:-
M 3

DC Sweep Analysis Procedure: B S S 129

The DC sweep is used to draw the voltage transfer

characteristic (VTC) between output and input. V
V 2
1. Connect the circuit as shown in figure M 2 5V dc
2. Set up the DC Sweep: go to the V 3 L2082
PSPICE/NEW SIMULATION PROFILE 5V dc V
3. From dc sweep analysis we choose
primary sweep and we put the name of
the source V3 and start value (0),end
value (5V) and increment (0.1).
4. Place the Voltage marker above R1 and
R2 as shown.
5. Run the circuit 0
6. The result will be as shown below.

OUTPUT:-

EXPERIMENT:-6

AIM:- Transient analysis of CMOS inverter using step input.

THEORY:-
V1
5Vdc
An inverter circuit outputs a voltage
representing the opposite logic-level to its
input. Inverters can be constructed using a 0
single NMOS transistor or a single PMOS M 1

transistor coupled with a resistor. Since this

M 2 S J 5 9 8 /N E C
'resistive-drain' approach uses only a single type
of transistor, it can be fabricated at low cost.
However, because current flows through the V V
V2
resistor in one of the two states, the resistive- 5 V d c
M 2
drain configuration is disadvantaged for power
consumption and processing speed. M 2 S K 3 2 9 5 /N E C
0
Alternatively, inverters can be constructed using
two complementary transistors in a CMOS
configuration. This configuration greatly
reduces power consumption since one of the 0
transistors is always off in both logic states.
Processing speed can also be improved due to the relatively low resistance compared to the NMOS-
only or PMOS-only type devices. Inverters can also be constructed with Bipolar Junction
Transistors (BJT) in either a resistor-transistor logic (RTL) or a transistor-transistor logic (TTL)
configuration.

Digital electronics circuits operate at fixed voltage levels corresponding to a logical 0 or 1

(see Binary). An inverter circuit serves as the basic logic gate to swap between those two voltage
levels. Implementation determines the actual voltage, but common levels include (0, +5V) for TTL
circuits.

CIRCUIT DIAGRAM:-

VCC
10V
VCC
R1
1k

Q2 XMM1

3 2N6804
0
1

V1 Q1
5 V

0 MTD4N20E
0

Transient Analysis Procedure:

1. Draw the circuit as shown in figure
2. Insert the VDC from the library and give the value.
3. Set up the Transient Analysis: go to the PSPICE/NEW SIMULATION PROFILE.
4. Give it a name. When the Simulation Settings window opens, select "Time Domain (Transient)"
Analysis.
5. Enter the Run Time. Lets make it 10000us. For the Max Step size, you can leave it blank or enter
10us. Place the Voltage marker. Run PSpice.

OBSERVATIONS:-

Input (V1) in volts Output (Vo) in volts

0V 9.99 V
1V 9.991 V
2V 9.992 V
3V 9.993 V
4V 1.876mV
5V 936.64uV

RESULT:- Study of transient Analysis of CMOS inverter using

step input has been done.
EXPERIMENT:-7

AIM:- Transient Analysis of CMOS inverter using step input with parameters.

CIRCUIT DIAGRAM:-
VCC
XSC1
3.3V

Q3 Ext Trig
+
_
A B
+ _ + _
V2 0.5u
1.25u

5nsec Q1 Vo
C1
500fF
0.5u
1.25u

OUTPUT:-
EXPERIMENT:-8

AIM:- Transient Analysis of CMOS inverter using pulse input.

CIRCUIT DIAGRAM:-

V1
5Vdc

0
M 1

M 2 S J 5 9 8 /N E C

V V
V1 = 0 V2
V2 = 5 M 2
TD =
TR = 1ns
TF = 1ns M 2 S K 3 2 9 5 /N E C
PW = 1m s
PER = 2m s

0
0

Transient Analysis Procedure:

1. Draw the circuit as shown in figure

2. Insert the Vpulse input and VDC supply from the library and put the given value.
3. Set up the Transient Analysis: go to the PSPICE/NEW SIMULATION PROFILE.
4. Give it a name. When the Simulation Settings window opens, select "Time Domain (Transient)"
Analysis.
5. Enter the Run Time. Lets make it 10000us. For the Max Step size, you can leave it blank or enter
10us. Place the Voltage marker.
6. Run PSpice.

OUTPUT:-
EXPERIMENT:-9

AIM:- Transient Analysis of CMOS inverter using pulse input with parameters.

CIRCUITDIAGRAM:-

Transient Analysis with parameter Procedure: V1

5V dc
1. Draw the circuit as shown in figure
2. Insert the Vpulse input and VDC supply from the 0
library and put the given value. M 1

3. Set up the Transient Analysis: go to the PSPICE/NEW

M 2 S J 5 9 8 /N E C
SIMULATION PROFILE.
4. Give it a name. When the Simulation Settings window V

opens, select "Time Domain (Transient)" V1 = 0

V2 = 5
V2
M 2
Analysis. TD =
TR = 0
5. Enter the Run Time. Lets make it 10000us. For the Max TF = 0
PW = 10ns
M 2 S K 3 2 9 5 /N E C

Step size, you can leave it blank or enter PER = 30ns

10us. Place the Voltage marker on output.

6. Run PSpice. 0
0

OUTPUT:-
EXPERIMENT:-10

AIM:-DC Analysis (VTC) of CMOS inverter with and without parameters.

CIRCUIT DIAGRAM:-

DC Sweep Analysis Procedure:

V1
5Vdc
The DC sweep is used to draw the voltage transfer
characteristic (VTC) between output and input. 0
1. Connect the circuit as shown in figure M 1

2. Set up the DC Sweep: go to the PSPICE/NEW M 2 S J 5 9 8 /N E C

SIMULATION PROFILE
3. From dc sweep analysis we choose primary sweep V2
V V

and we put the name of the source V2 and start value 5Vdc M 2

(0),end value (5V) and increment (0.1).

M 2 S K 3 2 9 5 /N E C
4. Place the Voltage marker as shown in the figure .
5. Run the circuit
6. The result will be as shown below.
0
RESULT:- 0
EXPERIMENT:-11

AIM:-Transient & DC Analysis of NOR Gate inverter.

SOFTWARE USED:- Orcade lite-16.1/Multisim12.0

THEORY:-

The circuit below has two inputs and one output.

Whenever at least one of the inputs is high, the corresponding N-type transistor will be
closed while the P-type transistor will be open.
Consequently, the output voltage will be low.
Conversely, if both inputs are low, then both P-type transistors at the top will be closed
circuits and the N-type transistors will be open.
Hence, the output voltage is high.
The function of this gate can be summarized by the following table:
V1 V2 Output

Low Low High

Low High Low

High Low Low

High High Low

If logical 1's are associated with high voltages then the function of this gate is called NOR
for negated OR.
Again, there is never a conducting path from the supply voltage to ground.

NOR Circuit and Standard Symbol

CIRCUIT DIAGRAM:-
DC Sweep Analysis Procedure:
V1
5Vdc
The DC sweep is used to draw the
voltage transfer characteristic 0
(VTC) between output and input. M4

M TD 2 9 5 5 V /O N
1. Connect the circuit as shown in
figure M5

2. Set up the DC Sweep: go to M TD 2 9 5 5 V /O N

the PSPICE/NEW SIMULATION

PROFILE V

3. From dc sweep analysis we

choose primary sweep and we V1 = 0 V2 V M6 M7
V2 = 5
put the name of the source V2 TD =
TR =
M T D 2 N 5 0 /O N M TD 2 N 5 0 /O N

and start value (0),end value TF =

PW = 20ns
(5V) and increment (0.1). PER = 40ns

4. Place the Voltage marker as

0
shown in the figure .
5. Run the circuit
6. The result will be as shown 0
below.

Result
(A) DC Analysis of NOR gate Inverter.
(B)Transient Analysis of NOR Gate inverter.

Transient Analysis with parameter Procedure:

V1

1. Draw the circuit as shown in figure

5Vdc

2. Insert the Vpulse input and VDC supply M 4

0

from the library and put the given value. M T D 2 9 5 5 V /O N

3. Set up the Transient Analysis: go to the

PSPICE/NEW SIMULATION PROFILE. M T D 2 9 5 5 V /O N
M 5

4. Give it a name. When the Simulation

Settings window opens, select "Time V

Domain (Transient)"
Analysis. V1 = 0
V2 = 5
V2 V M6 M7

5. Enter the Run Time. Lets make it 20ms. TD =

TR = 1ns
TF = 1ns
M T D 2 N 5 0 /O N M T D 2 N 5 0 /O N

For the Max Step size, you can leave it PW = 1m s

PER = 2m s

blank or enter
10us. Place the Voltage marker on 0

output.
6. Run PSpice. 0

OUTPUT:-

(A) Transient Analysis of NOR Gate inverter:

EXERIMENT:-12

AIM:- Transient & DC Analysis of NAND Gate.

SOFTWARE USED- Orcade lite-16.1/Multisim12.0

THEORY:-

The circuit below has two inputs and one output.

Whenever at least one of the inputs is low, the corresponding P-type transistor will be
conducting while the N-type transistor will be closed.
Consequently, the output voltage will be high. Conversely, if both inputs are high, then both
P-type transistors at the top will be open circuits and both N-type transistors will be
conducting.
Hence, the output voltage is low.
The function of this gate can be summarized by the following table:
V1 V2 Output

Low Low High

Low High High

High Low High

High High Low

If logical 1's are associated with high voltages then the function of this
gate is called NAND for negated AND.
Again, there is never a conducting path from the supply voltage to
ground.

FIG 1: CMOS NAND GATE

CIRCUIT DIAGRAM:-

M 5

BS S129

V
V6
5Vdc
M 6

M 2N 6759

V
V5
5Vdc

M 7

0 M 2N 6759

OUTPUT:-

DC Analysis of NAND Gate.

(b )Transient Analysis of NAND Gate

CIRCUIT DIAGRAM:- M 5

B S S 129

V 6
5V dc
O F F T IM E = .5 u S D S T M 1 M 6
O N T I M E = . 5 u S CLK
D E LA Y =
S TA R TV A L = 0 M 2VN 6 7 5 9
O P P V A L = 1

O F F T IM E = .5 u S D S T M 2 M 7
O N T I M E = . 5 u S CLK
D E LA Y =
S TA R TV A L = 0 M 2 N V6 7 5 9
O P P V A L = 1

0
RESULT:-

Transient Analysis of NAND Gate.