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BFF1303 ELECTRICAL/ELECTRONICS ENGINEERING
Contents:
Outcomes
Semiconductor Diodes
Diode Characteristics
Semiconductor Material
P-N Junction
Diode Operating Conditions
Actual Diode Characteristics
Faculty of Manufacturing Zener Region
Universiti Malaysia Pahang Forward Bias Region
Kampus Pekan, Pahang Darul Makmur
Tel: +609-424 5800 Temperature Effects
Fax: +609-4245888
Resistance Levels
Diode Equivalent Circuit
http://fkp.ump.edu.my/
Reverse Recovery Time
Diode Specification Sheet
Diode Symbol & Packaging
Various Diode
Load-Line Analysis
Series-Parallel Configuration
Understand the
diode Learn the types of
characteristics and diodes
its model
Understand various
rectifiers and wave-
shaping circuits
The voltage across the diode is All of the voltage is across the
0V diode
The current is infinite The current is 0 A
The forward resistance is The reverse resistance is
defined as RF = VF / IF defined as RR = VR / IR
The diode acts like a short The diode acts like open
Doping
The electrical characteristics of silicon and germanium are
improved by adding materials in a process called doping.
p-type
The electrons in the n-type material migrate across the junction to the
p-type material (electron flow).
No Bias
No external voltage is applied: VD = 0 V
No current is flowing: ID = 0 A
Minority Carriers
Vd
rav pt. to pt.
I d
The point where the load line and the characteristic curve
intersect is the Q-point, which identifies ID and VD for a
particular diode in a given circuit.
V V VD I D R
V
ID
R VD 0
VD V I D 0
V 2 V, R 1k
Substituting iD 0 VD 2 V
I DQ 1.3mA
VDQ 0.7 V
V 2 V, R 100
V 15 V, R 1k
V 1V, R 20
Constants
Silicon Diode: VD = 0.7 V
Germanium Diode: VD = 0.3 V
V 8V 2.2 k
Then VD 0.7 V
VR
VR V VD ID IR
R
VR 8 0.7 7.3V
7.3
ID = 3.32 mA
2.2k
Then VD V 0.5 V
I D 0A VR I D R
VR 0 V
VD 0.7 V
VD VD Vo 0.7 V
1 2
VR 9.3 V
V - VD 10 V 0.7 V
IR 28 mA
R 0.33k
28 mA
I
D1
ID 14 mA
2 2