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Types of Diodes
JANUARY 27, 2015 BY ADMINISTRATOR 7 COMMENTS
Contents [hide]
1 Introduction
1.1 1. Small Signal Diode
1.2 2. Large Signal Diode
1.3 3. Zener Diode
1.4 4.Light Emitting Diode (LED)
1.5 5. Constant Current Diodes
1.6 6. Schottky Diode
1.7 7. Shockley Diode
1.7.1 Shockley Diode Applications
1.8 8. Step Recovery Diodes
1.9 Tunnel Diode
1.9.1 Tunnel Diode Applications
1.10 10. Varactor Diode
1.10.1 Varactor Diode Applications
1.11 11. Laser Diode
1.11.1 Laser Diode Types:
1.12 12. Transient Voltage Suppression Diode
1.13 13. Gold Doped Diodes
1.14 14. Super Barrier Diodes
1.15 15. Peltier Diode
1.16 16. Crystal Diode
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Introduction
Diodes are electronic components functions as a one-way valve it means it allow current to
ow in one direction. These diodes are manufactured by the semiconductor materials
germanium, silicon and selenium. Operation of diode can be classi ed in two ways, if it allows
the current then it is forward biased otherwise it is reverse biased.
For silicon diodes the forward voltage is 0.7v and for germanium it is 0.3v. In silicon diode the
dark band indicates the cathode terminal and the other terminal is anode. Generally diodes
are used as reverse polarity protector and transient protector. There are many types of diodes
and some of these are listed as follows.
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The appearance of signal diode is very small when compared with the power diode. To
indicate the cathode terminal one edge is marked with black or red in color. For the
applications at high frequencies the performance of the small signal diode is very e ective.
With respect to the functional frequencies of the signal diode the carrying capacity of the
current and power are very low which are maximum nearly at 150mA and 500mW.
The signal diode is a silicon doped semiconductor diode or a germanium doped diode but
depending up on the doping material the characteristics of the diode varies. In signal diode
the characteristics of the silicon doped diode is approximately opposite to the germanium
doped diode.
The silicon signal diode has high voltage drop at the coupling about 0.6 to 0.7 volts so, it has
very high resistance but low forward resistance. On other hand germanium signal diode has
low resistance due to low voltage drop nearly at 0.2 to 0.3 volts and high forward resistance.
Due to small signal the functional point is not disrupted in small signal diode.
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3. Zener Diode
It is a passive element works under the principle of zener breakdown. First produced by
Clarence zener in 1934.It is similar to normal diode in forward direction, it also allows current in
reverse direction when the applied voltage reaches the breakdown voltage. It is designed to
prevent the other semiconductor devices from momentary voltage pulses. It acts as voltage
regulator.
Earlier they used in inductor lamps but now in recent applications they are using in
environmental and task handling. Mostly used in applications like aviation lighting, tra c
signals, camera ashes.
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It functions as a two terminal current limiter. In this JFET acts as current limiter to achieve high
output impedance. The constant current diode symbol is shown below.
6. Schottky Diode
In this type of diode the junction is formed by contacting the semiconductor material with
metal. Due to this the forward voltage drop is decreased to min. The semiconductor material is
N-type silicon which acts as an anode and the metal acts as a cathode whose materials are
chromium, platinum, tungsten etc.
Due to the metal junction these diodes have high current conducting capability thus the
switching time reduces. So, Schottky has greater use in switching applications. Mainly because
of the metal- semiconductor junction the voltage drop is low which in turn increase the diode
performance and reduces power loss. So, these are used in high frequency recti er
applications. The symbol of Schottky diode is as shown below.
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7. Shockley Diode
It was the invention of rst semiconductor devices it has four layers. It is also called as
PNPNdiode. It is equal to a thyristor without a gate terminal which means the gate terminal is
disconnected. As there is no trigger inputs the only way the diode can conduct is by providing
forward voltage.
It stays on ones it turned ON and stays o ones it turned OFF. The diode has two operating
states conducting and non-conducting. In non-conducting state the diode conducts with less
voltage.
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The applications of these diodes are in higher order multipliers and in pulse shaper circuits.
The cut-o frequency of these diodes is very high which are nearly at Giga hertz order.
As multiplier this diode has the cut-o frequency range of 200 to 300 GHz. In the operations
which are performing at 10 GHz range these diodes plays a vital role. The e ciency is high for
lower order multipliers. The symbol for this diode is as shown below.
Tunnel Diode
It is used as high speed switch, of order nano-seconds. Due to tunneling e ect it has very fast
operation in microwave frequency region. It is a two terminal device in which concentration of
dopants is too high.
The transient response is being limited by junction capacitance plus stray wiring capacitance.
Mostly used in microwave oscillators and ampli ers. It acts as most negative conductance
device. Tunnel diodes can be tuned in both mechanically and electrically. The symbol of
tunnel diode is as shown below.
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1. Oscillatory circuits.
2. Microwave circuits.
3. Resistant to nuclear radiation.
They can able to vary capacitance up to high values. In varactor diode by changing the reverse
bias voltage we can decrease or increase the depletion layer. These diodes have many
applications as voltage controlled oscillator for cell phones, satellite pre- lters etc. The
symbol of varactor diode is given below.
1. Voltage-controlled capacitors.
2. Voltage-controlled oscillators.
3. Parametric ampli ers.
4. Frequency multipliers.
5. FM transmitters and Phase locked loops in radio, television sets and cellular telephone.
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The operation of these diodes is normal as p-n junction diodes but at the time of transient
voltage its operation changes. In normal condition the impedance of the diode is high. When
any transient voltage occurs in the circuit the diode enters in to the avalanche breakdown
region in which the low impedance is provided.
It is spontaneously very fast because the avalanche breakdown duration ranges in Pico
seconds. Transient voltage suppression diode will clamp the voltage to the xed levels, mostly
its clamping voltage is in minimum range.
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Leakage current
Maximum reverse stand-o voltage
Breakdown voltage
Clamping voltage
Parasitic capacitience
Parasitic inductance
Amount of energy it can absorb
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This heat is produced due to electric charge produced by the recombination of minority
charge carriers. This is mainly used in cooling and heating applications. This type of diodes
used as sensor and heat engine for thermo electric cooling.
In this a metal wire is present which is pressed against the semiconductor crystal. In this the
semiconductor crystal acts as cathode and metal wire acts as anode. These diodes are
obsolete in nature. Mainly used in microwave receivers and detectors.
These diodes are specially designed to undergo breakdown at speci c reverse voltage to
prevent the damage. The symbol of the avalanche diode is as shown below:
1. RF Noise Generation: It acts as source of RF for antenna analyzer bridges and also as
white noise generators. Used in radio equipments and also in hardware random number
generators.
2. Microwave Frequency Generation: In this the diode acts as negative resistance device.
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Modes of Operation:
1. Forward blocking mode (o state): In this j1 and j3 forward biased and j2 is reverse biased.
It o ers high resistance below breakover voltage and hence it is said to be o state.
2. Forward conduction mode (on state): By increasing the voltage at anode and cathode or
by applying positive pulse at the gate we can turn ON. To turn o the only way is to
decrease the current owing through it.
3. Reverse blocking mode (o state): SCR blocking the reverse voltage is named as
asymmetrical SCR. Mostly used in current source inverters.
If the cathode is coated with oxide material then the electrons emission capability is high.
Anode is a bit long in size and in some cases their surface is rough to reduce the temperatures
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When we apply forward bias voltage the holes and electrons will pushed into the intrinsic
layer. At some point due to this high injection level the electric eld will conduct through the
intrinsic material also. This eld made the carriers to ow from two regions. The symbol of PIN
diode is as shown below:
1. Rf Switches: Pin diode is used for both signal and component selection. For example pin
diodes acts as range-switch inductors in low phase noise oscillators.
2. Attenuators: it is used as bridge and shunt resistance in bridge-T attenuator.
3. Photo Detectors: it detects x-ray and gamma ray photons.
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In forward direction its operation is quite similar but in reverse bias condition the wire acts like
an insulator. Since this insulator is between the plates the diode acts as a capacitor. In general
the capacitor blocks the DC currents when the AC currents are owing in the circuit at high
frequencies. So, these are used to detect the high frequency signals.
It has two electrodes with Gallium Arsenide and Indium Phosphide due to these it has
negative di erential resistance. It is also termed as transferred electron device. It produces
micro wave RF signals so it is mainly used in Microwave RF devices. It can also use as an
ampli er. The symbol of Gunn diode is shown below:
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Comments
akash says
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NOVEMBER 24, 2015 AT 9:45 AM
Electronics Project Kits For Students ClickHere
Zener diode nai hai isme
Reply
naresh says
DECEMBER 31, 2015 AT 2:24 AM
Reply
Sdk says
FEBRUARY 9, 2016 AT 11:54 AM
Thank u frnd
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cutie says
FEBRUARY 16, 2016 AT 9:29 PM
Reply
Thank you very much. you help several people specially students
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Thank u
Reply
khan says
SEPTEMBER 29, 2016 AT 11:55 AM
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