Application No.: 15/024,009 Docket No.: SYNP 2386-3 determining the Early voltage of the transistor due to substrate current; determining transient currents iD(t), iG(t) and iS(t) of the transistor; and determining flicker noise in the transistor. 25. (Currently Amended) A system for enhancing simulations of three-dimensional transistors, comprising a data processor, and storage accessible by the processor, the data processor configured to perform the steps of receiving at an API input data describing aspects of a transistor, the data including identification of surfaces of gate dielectric material adjacent to the semiconductor body; estimating the effective channel length of the transistor in dependence upon the input data; and outputting the estimated effective channel length, wherein estimating the effective channel length of the transistor in dependence upon the input data includes: identifying containing boundaries of the channel in dependence upon the surfaces of gate dielectric material adjacent to the semiconductor body as identified in the data estimating an effective volume V of the channel of the transistor in dependence upon the dopant profile within the containing boundaries as described in the data; determining a cross-sectional area A of the channel of the transistor, estimating the effective channel length of the transistor as the ratio of V to A; and providing the estimated effective channel length for simulation of an aspect of the three- dimensional transistor. 26. (New) The system of claim 1, wherein the dopant profile described by the data set indicates a continuum of source/drain dopant concentration within the semiconductor body. and wherein determining the effective volume in dependence upon the dopant profile comprises summing all sub-volumes of the semiconductor body which are within the containin: boundaries and whose source/drain dopant concentration is indicated by the continuum as beins below a predetermined value. (00s68285,D00x) 7