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D 02/02
10BQ100
SCHOTTKY RECTIFIER 1 Amp
SMB
TJ range - 55 to 175 C
2.15 (.085) 1 2
3.80 (.150)
1.80 (.071) 3.30 (.130)
0.30 (.012)
1.30 (.051) 0.15 (.006) 2.0 TYP.
0.76 (.030) 5.60 (.220) (.079 TYP.)
4.2 (.165)
5.00 (.197)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
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10BQ100
Bulletin PD-2.497 rev. D 02/02
Voltage Ratings
Part number 10BQ100
VR Max. DC Reverse Voltage (V)
100
VRWM Max. Working Peak Reverse Voltage (V)
IFSM Max. Peak One Cycle Non-Repetitive 780 A 5s Sine or 3s Rect. pulse Following any rated
load condition and
Surge Current 38 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non- Repetitive Avalanche Energy 3 mJ TJ = 25 C, IAS = 1.0A, L = 10mH
IAR Repetitive Avalanche Current 0.2 A Current decaying linearly to zero in 1 sec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Electrical Specifications
Parameters 10BQ Units Conditions
VFM Max. Forward Voltage Drop (1) 0.78 V @ 1A
TJ = 25 C
* See Fig. 1 0.89 V @ 2A
0.62 V @ 1A
TJ = 125 C
0.72 V @ 2A
IRM Max. Reverse Leakage Current (1) 0.5 mA TJ = 25 C
VR = rated VR
* See Fig. 2 1 mA TJ = 125 C
CT Typical Junction Capacitance 42 pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25C
LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 V/ s
(Rated VR)
(1) Pulse Width < 300s, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 10BQ Units Conditions
TJ Max.Junction Temperature Range (*) - 55 to 175 C
Tstg Max. Storage Temperature Range - 55 to 175 C
RthJL Max. Thermal Resistance Junction 36 C/W DC operation
to Lead (**)
RthJA Max. Thermal Resistance Junction 80 C/W
to Ambient
wt Approximate Weight 0.10(0.003) g (oz.)
Case Style SMB Similar DO-214AA
Device Marking IR1J
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB
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10BQ100
Bulletin PD-2.497 rev. D 02/02
10 10
Tj = 175C
1 150C
Tj = 175C 75C
0.01
Tj = 125C 50C
0.001
Instantaneous Forward Current - I F (A)
Tj = 25C 25C
0.0001
.00001
0 20 40 60 80 100
Reverse Voltage - VR (V)
1
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
100
T = 25C
J
Junction Capacitance - C T (p F)
0.1 10
0.2 0.4 0.6 0.8 1 0 20 40 60 80 100
Forward Voltage Drop - VFM (V) Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
100
(C/W)
D = 0.75
D = 0.50
thJC
10 D = 0.33
D = 0.25
Thermal Impedance Z
PDM
D = 0.20
t1
t2
1
Notes:
Single Pulse
(Thermal Resistance) 1. Duty factor D = t1/ t2 .
2. Peak Tj = Pdm x ZthJC + Tc .
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Leg)
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10BQ100
Bulletin PD-2.497 rev. D 02/02
180 1
D = 0.20
D = 0.20
D = 0.25
Allowable Lead Temperature (C)
170 DC D = 0.25
Fig. 4 - Maximum Average Forward Current Fig. 5 - Maximum Average Forward Dissipation
Vs. Allowable Lead Temperature Vs. Average Forward Current
1000
Non-Repetitive Surge Current - I FSM (A)
100
10
10 100 1000 10000
Square Wave Pulse Duration - Tp (Microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
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10BQ100
Bulletin PD-2.497 rev. D 02/02
16 (0.63)
330 (13)
Each device has 8 characters, configurated 4 digits on two 10BQ SERIES - TAPE AND REEL
rows, for identification. The first row designates the device
as manufactured by International Rectifier as indicated by
the letters "IR", and the Part Number ( indicates the current WHEN ORDERING, INDICATE THE PART NUMBER
rating and voltage/process). The second row indicates the AND THE QUANTITY ( IN MULTIPLES OF 3000
year and the week of manufacturing. PIECES).
YY WW (Date Code)
Week
Year
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10BQ100
Bulletin PD-2.497 rev. D 02/02
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 02/02
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