PD -91522A

IRF9520NS/L
HEXFET Power MOSFET
l Advanced Process Technology D
l Surface Mount (IRF9520S) VDSS = -100V
l Low-profile through-hole (IRF9520L)
l 175C Operating Temperature RDS(on) = 0.48
l Fast Switching G
l P-Channel
ID = -6.8A
l Fully Avalanche Rated S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in D 2 Pak T O -26 2
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF9520L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ -10V -6.8
ID @ TC = 100C Continuous Drain Current, VGS @ -10V -4.8 A
IDM Pulsed Drain Current -27
PD @TA = 25C Power Dissipation 3.8 W
PD @TC = 25C Power Dissipation 48 W
Linear Derating Factor 0.32 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 140 mJ
IAR Avalanche Current -4.0 A
EAR Repetitive Avalanche Energy 4.8 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 3.1
C/W
RJA Junction-to-Ambient ( PCB Mounted,steady-state)** 40

5/13/98
IRF9520NS/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ.Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 V VGS = 0V, ID = -250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient -0.10
V/C Reference to 25C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance 0.48 VGS = 10V, ID = -4.0A
VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS = VGS, ID = -250A
gfs Forward Transconductance 1.4 S VDS = -50V, ID = -4.0A
-25 VDS = -100V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
-250 VDS = -80V, VGS = 0V, T J = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 27 ID = -4.0A
Qgs Gate-to-Source Charge 5.0 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge 15 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 14 VDD = -50V
tr Rise Time 47 ID = -4.0A
ns
td(off) Turn-Off Delay Time 28 RG = 22
tf Fall Time 31 RD = 12, See Fig. 10
Between lead,
LS Internal Source Inductance 7.5 nH
and center of die contact
Ciss Input Capacitance 350 VGS = 0V
Coss Output Capacitance 110 pF VDS = -25V
Crss Reverse Transfer Capacitance 70 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

-6.8
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
-27
(Body Diode) p-n junction diode. S

V SD Diode Forward Voltage -1.6 V TJ = 25C, IS = -4.0A, VGS = 0V

t rr Reverse Recovery Time 100 150 ns TJ = 25C, IF = -4.0A
Q rr Reverse Recovery Charge ___ 420 630 nC di/dt = -100A/s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%
max. junction temperature. ( See fig. 11 )
Starting TJ = 25C, L = 18mH Uses IRF9520N data and test conditions
RG = 25, IAS = -4.0A. (See Figure 12)
ISD -4.0A, di/dt -300A/s, VDD V(BR)DSS,
TJ 175C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
 IRF9520NS/L

100 VGS 100 VGS

TOP -15V TOP -15V
-10V -10V
-8.0V -8.0V
-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

-7.0V -7.0V
-6.0V -6.0V
-5.5V -5.5V
-5.0V -5.0V
BOTTOM -4.5V BOTTOM -4.5V
10 10

1 1

-4.5V
-4.5V
20s PULSE WIDTH 20s PULSE WIDTH
TJ = 25 C TJ = 175 C
0.1 0.1
0.1 1 10 100 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,

100 2.5
ID = -6.7A
R DS(on) , Drain-to-Source On Resistance
-I D , Drain-to-Source Current (A)

2.0
TJ = 175 C

10
(Normalized)

1.5
TJ = 25 C

1.0
1

0.5

V DS = 10V
20s PULSE WIDTH VGS = -10V
0.1 0.0
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
 IRF9520NS/L

800 20
VGS = 0V, f = 1MHz ID = -4.0 A
VDS =-80V
Ciss = Cgs + Cgd , Cds SHORTED
VDS =-50V
Crss = Cgd

-VGS, Gate-to-Source Voltage (V)

VDS =-20V
Coss = Cds + Cgd 16
600
C, Capacitance (pF)

Ciss

12

400 Coss
8
Crss
200
4

FOR TEST CIRCUIT

SEE FIGURE 13
0 0
1 10 100 0 5 10 15 20 25
-VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
-ISD , Reverse Drain Current (A)

TJ = 175 C
-II D , Drain Current (A)

10 10
100us

TJ = 25 C
1ms

1 1
10ms

TC = 25 C
TJ = 175 C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.8 1.4 2.0 2.6 1 10 100 1000
-VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF9520NS/L
RD
VDS
8.0
VGS
D.U.T.
RG -
+ V DD
6.0
-ID , Drain Current (A)

-10V
Pulse Width 1 s
Duty Factor 0.1 %
4.0

Fig 10a. Switching Time Test Circuit

2.0 td(on) tr t d(off) tf

VGS
10%

0.0
25 50 75 100 125 150 175
TC , Case Temperature ( C)
90%
VDS

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

10
Thermal Response (Z thJC )

D = 0.50

1
0.20

0.10

0.05
0.02 P DM
SINGLE PULSE
0.01 (THERMAL RESPONSE)
0.1
t1
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF9520NS/L

VD S L 400
ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP -1.7A
-2.8A
RG D .U .T
VD D BOTTOM -4.0A
IA S A 300
-2 0 V D R IV E R
tp 0 .0 1

200

15V

100
Fig 12a. Unclamped Inductive Test Circuit

0
25 50 75 100 125 150 175
IAS
Starting TJ , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V (BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K
QG 12V .2F
.3F
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRF9520NS/L
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-

RG dv/dt controlled by RG +
ISD controlled by Duty Factor "D" VDD
-
D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS
IRF9520NS/L
D2Pak Package Outline

1 0.54 (.4 15) -B - 1 0.16 (.4 00 )

1 0.29 (.4 05) 4.69 (.1 85) RE F.
1.4 0 (.055 ) 4.20 (.1 65)
-A- 1.3 2 (.05 2)
M AX. 1.2 2 (.04 8)
2
6.47 (.2 55 )
6.18 (.2 43 )

1.7 8 (.07 0) 15 .4 9 (.6 10) 2.7 9 (.110 )

1.2 7 (.05 0) 1 3 14 .7 3 (.5 80) 2.2 9 (.090 )

5 .28 (.20 8) 2.61 (.1 03 )

4 .78 (.18 8) 2.32 (.0 91 )

8.8 9 (.3 50 )
1.40 (.0 55) 1.3 9 (.0 5 5) R E F.
3X
1.14 (.0 45) 0 .93 (.03 7 ) 0.5 5 (.022 ) 1.1 4 (.0 4 5)
3X 0.4 6 (.018 )
0 .69 (.02 7 )
5 .08 (.20 0) 0 .25 (.01 0 ) M B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T

1 1.43 (.4 50 )

NO TE S: LE A D A SS IG N M E N TS 8.89 (.3 50 )
1 D IM EN S IO N S A FTER SO L D ER D IP. 1 - G A TE
2 - D R AIN 17 .78 (.70 0)
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 - S O U RC E
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
3 .8 1 (.15 0)

2.5 4 (.100 )
2 .08 (.08 2) 2X
2X

Part Marking Information

D2Pak

A
IN TE R N A TIO N A L PART NUM BER
R E C T IF IE R
F530S
LO G O
9 24 6
9B 1M DATE CODE
(Y YW W )
A S S E M B LY
YY = Y E A R
LO T C O D E
W W = W EEK
 IRF9520NS/L
Package Outline
TO-262 Outline

Part Marking Information

TO-262
IRF9520NS/L
Tape & Reel Information
D2Pak

TR R

1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3 )
4 .1 0 (.1 6 1 ) 1 .5 0 (.0 5 9 )
3 .9 0 (.1 5 3 ) 0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )

F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 1.6 0 (.4 57 )

1 .6 5 (.0 6 5 ) 1 1.4 0 (.4 49 ) 2 4 .3 0 (.9 5 7 )
1 5.4 2 (.6 0 9 )
2 3 .9 0 (.9 4 1 )
1 5.2 2 (.6 0 1 )
TR L
1 .7 5 (.0 6 9 )
1 0.9 0 (.4 2 9 ) 1 .2 5 (.0 4 9 )
1 0.7 0 (.4 2 1 ) 4 .7 2 (.1 3 6)
1 6 .1 0 (.6 3 4 ) 4 .5 2 (.1 7 8)
1 5 .9 0 (.6 2 6 )

F E E D D IRE CTIO N

13 .5 0 (.53 2) 27 .40 (1.0 79)

12 .8 0 (.50 4) 23 .90 (.94 1)

3 30 .0 0 60.00 (2.3 62)

(14.1 73) M IN .
MAX.

30 .40 (1.19 7)
NO TES : MAX.
1. C O M F O R M S T O E IA-4 18. 26 .40 (1 .03 9) 4
2. C O N TR O LL IN G D IM E N S IO N : M IL LIM E T E R . 24 .40 (.9 61 )
3. D IM E N S IO N M E A SU R E D @ H U B .
3
4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U TE R E D G E.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98