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1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
BSN20 in SOT23.
2. Features
TrenchMOS technology
Very fast switching
Logic level compatible
Subminiature surface mount package.
3. Applications
Relay driver
c
High speed line driver
c
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
3 d
2 source (s)
3 drain (d)
g
03ab44
03ab30
1 2 s
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 C 50 V
VDGR drain-gate voltage (DC) Tj = 25 to 150 C; RGS = 20 k 50 V
VGS gate-source voltage (DC) 20 V
ID drain current (DC) Tsp = 25 C; VGS = 10 V; 173 mA
Figure 2 and 3
Tsp = 100 C; VGS = 10 V; Figure 2 110 mA
IDM peak drain current Tsp = 25 C; pulsed; tp 10 s; 0.7 A
Figure 3
Ptot total power dissipation Tsp = 25 C; Figure 1 0.83 W
Tstg storage temperature 65 +150 C
Tj operating junction temperature 65 +150 C
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 C 173 mA
ISM peak source (diode forward) current Tsp = 25 C; pulsed; tp 10 s 0.7 A
9397 750 07213 Philips Electronics N.V. 2000. All rights reserved.
03aa17 03aa25
120 120
Ider (%)
P 100 100
der
(%)
80 80
60 60
40 40
20 20
0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Tsp (oC)
Tsp (oC)
P tot VGS 5 V
P der = ---------------------- 100%
P
ID
tot ( 25 C ) I der = ------------------- 100%
I
D ( 25 C )
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a
function of solder point temperature. function of solder point temperature.
03aa49
1
ID Tsp = 25oC tp = 10 s
(A) RDSon = VDS/ ID
100 s
1 ms
10-1
tp 10 ms
P =
T
D.C.
100 ms
tp t
T
10-2
1 10 VDS (V) 102
9397 750 07213 Philips Electronics N.V. 2000. All rights reserved.
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-sp) thermal resistance from junction to solder mounted on a metal clad substrate; 150 K/W
point Figure 4
Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; 350 K/W
minimum footprint
03aa47
103
Zth(j-sp)
(K/W)
102
= 0.5
0.2
0.1
tp
P =
T
10
0.05
0.02
single pulse tp t
T
9397 750 07213 Philips Electronics N.V. 2000. All rights reserved.
8. Characteristics
Table 5: Characteristics
Tj = 25 C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown ID = 10 A; VGS = 0 V
voltage Tj = 25 C 50 75 V
Tj = 55 C 46 V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
Tj = 25 C 0.4 1 V
Tj = 150 C 0.3 V
Tj = 55 C 3.5 V
IDSS drain-source leakage current VDS = 40 V; VGS = 0 V
Tj = 25 C 0.01 1.0 A
Tj = 150 C 10 A
IGSS gate-source leakage current VGS = 20 V; VDS = 0 V 10 100 nA
RDSon drain-source on-state VGS = 10 V; ID = 100 mA;
resistance Figure 7 and 8
Tj = 25 C 2.8 15
Tj = 150 C 28
VGS = 5 V; ID = 100 mA;
Figure 7 and 8
Tj = 25 C 3.8 20
Dynamic characteristics
gfs forward transconductance VDS = 10 V; ID = 100 mA; 40 170 mS
Figure 11
Ciss input capacitance VGS = 0 V; VDS = 10 V; 17 25 pF
Coss output capacitance f = 1 MHz; Figure 12 7 15 pF
Crss reverse transfer capacitance 4 8 pF
ton turn-on time VDD = 20 V; RD = 180 ; 1.7 8 ns
toff turn-off time VGS = 10 V; RG = 50 ; 8 15 ns
RGS = 50
Source-drain diode
VSD source-drain (diode forward) IS = 180 mA; VGS = 0 V; 0.9 1.5 V
voltage Figure 13
trr reverse recovery time IS = 180 mA; 30 ns
Qr recovered charge dIS/dt = 100 A/s; 30 nC
VGS = 0 V; VDS = 25 V
9397 750 07213 Philips Electronics N.V. 2000. All rights reserved.
03aa51
03aa53
0.7
0.8
ID
Tj = 25oC V = 10V ID VDS > ID X RDSon
(A) GS
0.6 (A) 0.7
0.5
0.6
Tj = 25oC
0.5
0.4
150oC
0.4
0.3
4.5 V
0.3
0.2
4 V
0.2
3.5 V
0.1
0.1
3 V
0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1 2 3 4 5 6 7 8 9 10
VDS (V) VGS (V)
03aa52 03aa28
10 2.2
4V a
RDSon 3.5V 2
9 4.5 V Tj = 25oC
()
8 1.8
1.6
7
1.4
6
1.2
5
1
4
VGS = 10V 0.8
3
0.6
2 0.4
1 0.2
0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -60 -20 20 60 100 140 180
ID (A) Tj (oC)
Tj = 25 C R DSon
a = ---------------------------
-
R DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance
of drain current; typical values. factor as a function of junction temperature.
9397 750 07213 Philips Electronics N.V. 2000. All rights reserved.
03aa89
2
03aa38 10-1
VGS(th) ID
(V) 1.8 (A)
1.6 10-2
1.4
min typ
1.2 10-3
1
typ
0.8 10-4
0.6
min
0.4 10-5
0.2
0 10-6
-60 -20 20 60 100 140 180 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Tj (oC) VGS (V)
03aa54
0.3
03aa56
gfs
VDS > ID X RDSon
102
(S)
0.25
Ciss, Coss,
Crss
Tj = 25oC (pF)
0.2
Ciss
0.15
150oC 10
Coss
0.1
0.05
Crss
0
9397 750 07213 Philips Electronics N.V. 2000. All rights reserved.
03aa55
1
IS VGS = 0 V
0.9
(A)
0.8
0.7
150oC
0.6
0.5
0.4
0.3 Tj = 25oC
0.2
0.1
VSD (V)
9397 750 07213 Philips Electronics N.V. 2000. All rights reserved.
9. Package outline
Plastic surface mounted package; 3 leads SOT23
D B E A X
HE v M A
A1
1 2 c
e1 bp w M B Lp
e
detail X
0 1 2 mm
scale
97-02-28
SOT23 TO-236AB 99-09-13
9397 750 07213 Philips Electronics N.V. 2000. All rights reserved.
9397 750 07213 Philips Electronics N.V. 2000. All rights reserved.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
9397 750 07213 Philips Electronics N.V. 2000 All rights reserved.
For all other countries apply to: Philips Semiconductors, Internet: http://www.semiconductors.philips.com
Marketing Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825 (SCA70)
9397 750 07213 Philips Electronics N.V. 2000. All rights reserved.
Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1 Transient thermal impedance . . . . . . . . . . . . . . 4
8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11