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SPUX3N60S5

Target data sheet


SPDX3N60S5

Cool MOS Power Transistor


Worldwide best RDS(on) in D-Pack
N-Channel
Enhancement mode

Ultra low gate charge


Avalanche rated
dv/dt rated 1 2 3
150C operating temperature G D S

Type VDS ID RDS(on) Marking Package Ordering Code


SPUX3N60S5 600 V 7.3 A 600 m X3N60S5 P-TO251-3-1 -
SPDX3N60S5 P-TO252 -

Maximum Ratings, at Tj = 25 C, unless otherwise specified


Parameter Symbol Value Unit
Drain source voltage VDSS 600 V
Continuous drain current ID A
TC = 25 C 7.3
TC = 100 C 4.6
Pulsed drain current ID puls 14.6
TC = 25 C
Avalanche energy, single pulse EAS 230 mJ
ID = 7.3 A, VDD = 50 V, RGS = 25
Avalanche current (periodic, limited byTjmax) IAR tbd A
Avalanche energy (10 kHz, limited byTjmax) EAR tbd mJ
Reverse diode dv/dt dv/dt 6 KV/s
IS = 7.3 A, VDS<VDSS , di/dt = 100 A/s,
Tjmax = 150 C
Gate source voltage VGS 20 V
Power dissipation, TC = 25 C Ptot 83 W
Operating temperature Tj -55 ...+150 C
Storage temperature Tstg -55 ... +150
IEC climatic category; DIN IEC 68-1 55/150/56

Semiconductor Group 1 04 / 1998


SPUX3N60S5
Target data sheet
SPDX3N60S5

Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25 C, unless otherwise specified min. typ. max.
Thermal Characteristics
Thermal resistance, junction - case RthJC - - 1.5 K/W
Thermal resistance, junction - ambient RthJA - 100 -
(Leaded and through-hole packages)
SMD version, device on PCB: RthJA
@ min. footprint - tbd -
@ 6 cm2 cooling area 1) - tbd -

Static Characteristics
Drain- source breakdown voltage V(BR)DSS 600 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage,VGS = V DS VGS(th)
ID = 350 A, T j = 25 C 3.5 4.5 5.5
ID = 350 A, T j = 150 C tbd - -
Zero gate voltage drain current,V DS=V DSS IDSS A
VGS = 0 V, Tj = -40 C - - 0.1
VGS = 0 V, Tj = 25 C - 0.5 1
VGS = 0 V, Tj = 150 C - - tbd
Gate-source leakage current IGSS - 10 100 nA
VGS = 20 V, V DS = 0 V
Drain-Source on-state resistance RDS(on) - tbd 600 m
VGS = 10 V, ID = 4.6 A

1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain
connection. PCB is vertical without blown air.

Semiconductor Group 2 04 / 1998


SPUX3N60S5
Target data sheet
SPDX3N60S5
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25 C, unless otherwise specified min. typ. max.
Characteristics
Transconductance gfs - tbd - S
VDS 2 * ID * RDS(on)max , ID = 4.6 A
Input capacitance Ciss - 980 tbd pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance Coss - 630 tbd
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance Crss - 33 tbd
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time td(on) - tbd tbd ns
VDD = 350 V, V GS = 10 V, I D = 7.3 A,
RG = 12
Rise time tr - tbd -
VDD = 350 V, V GS = 10 V, I D = 7.3 A,
RG = 12
Turn-off delay time td(off) - tbd tbd
VDD = 350 V, V GS = 10 V, I D = 7.3 A,
RG = 12
Fall time tf - tbd -
VDD = 350 V, V GS = 10 V, I D = 7.3 A,
RG = 12

Semiconductor Group 3 04 / 1998


SPUX3N60S5
Target data sheet
SPDX3N60S5
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25 C, unless otherwise specified min. typ. max.
Gate Charge Characteristics
Gate-source charge Qgs - tbd - nC
ID = 7.3 A, VDD = 400 V
Gate-drain charge Qgd - tbd -
ID = 7.3 A, VDD = 400 V
Total gate charge QG - 32 tbd
VDD = 400 V, ID = 7.3 A, VGS = 0 to 10 V

Reverse Diode
Continuous source current IS - - 7.3 A
TC = 25 C
Pulsed source current ISM - - 14.6
TC = 25 C
Inverse diode forward voltage VSD - tbd 1.2 V
VGS = 0 V, IF = 7.3 A
Reverse recovery time trr - tbd - ns
VR = 100 V, IF=IS , diF/dt = 100 A/s
Reverse recovery charge Q rr - tbd - C
VR = 100 V, IF=lS , diF/dt = 100 A/s

Semiconductor Group 4 04 / 1998


SPUX3N60S5
Target data sheet
SPDX3N60S5

Edition 7.97
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstrae 73,
81541 Mnchen
Siemens AG 1997
All Rights Reserved.
Attention please!
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not for applications, processes and circuits implemented within components or assemblies.
The information describes a type of component and shall not be considered as warranted characteristics.
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For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany
or the Siemens Companies and Representatives worldwide (see address list).
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in question please contact your nearest Siemens Office, Semiconductor Group.
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i i d i d/ fh lif f h f il i i bl h h h lh f h

Semiconductor Group 5 04 / 1998