SPUX3N60S5

Target data sheet

SPDX3N60S5

Cool MOS Power Transistor

Worldwide best RDS(on) in D-Pack
N-Channel
Enhancement mode

Ultra low gate charge

Avalanche rated
dv/dt rated 1 2 3
150C operating temperature G D S

Type VDS ID RDS(on) Marking Package Ordering Code

SPUX3N60S5 600 V 7.3 A 600 m X3N60S5 P-TO251-3-1 -
SPDX3N60S5 P-TO252 -

Maximum Ratings, at Tj = 25 C, unless otherwise specified

Parameter Symbol Value Unit
Drain source voltage VDSS 600 V
Continuous drain current ID A
TC = 25 C 7.3
TC = 100 C 4.6
Pulsed drain current ID puls 14.6
TC = 25 C
Avalanche energy, single pulse EAS 230 mJ
ID = 7.3 A, VDD = 50 V, RGS = 25
Avalanche current (periodic, limited byTjmax) IAR tbd A
Avalanche energy (10 kHz, limited byTjmax) EAR tbd mJ
Reverse diode dv/dt dv/dt 6 KV/s
IS = 7.3 A, VDS<VDSS , di/dt = 100 A/s,
Tjmax = 150 C
Gate source voltage VGS 20 V
Power dissipation, TC = 25 C Ptot 83 W
Operating temperature Tj -55 ...+150 C
Storage temperature Tstg -55 ... +150
IEC climatic category; DIN IEC 68-1 55/150/56

Semiconductor Group 1 04 / 1998

 SPUX3N60S5
Target data sheet
SPDX3N60S5

Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25 C, unless otherwise specified min. typ. max.
Thermal Characteristics
Thermal resistance, junction - case RthJC - - 1.5 K/W
Thermal resistance, junction - ambient RthJA - 100 -
(Leaded and through-hole packages)
SMD version, device on PCB: RthJA
@ min. footprint - tbd -
@ 6 cm2 cooling area 1) - tbd -

Static Characteristics
Drain- source breakdown voltage V(BR)DSS 600 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage,VGS = V DS VGS(th)
ID = 350 A, T j = 25 C 3.5 4.5 5.5
ID = 350 A, T j = 150 C tbd - -
Zero gate voltage drain current,V DS=V DSS IDSS A
VGS = 0 V, Tj = -40 C - - 0.1
VGS = 0 V, Tj = 25 C - 0.5 1
VGS = 0 V, Tj = 150 C - - tbd
Gate-source leakage current IGSS - 10 100 nA
VGS = 20 V, V DS = 0 V
Drain-Source on-state resistance RDS(on) - tbd 600 m
VGS = 10 V, ID = 4.6 A

1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain
connection. PCB is vertical without blown air.

Semiconductor Group 2 04 / 1998

 SPUX3N60S5
Target data sheet
SPDX3N60S5
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25 C, unless otherwise specified min. typ. max.
Characteristics
Transconductance gfs - tbd - S
VDS 2 * ID * RDS(on)max , ID = 4.6 A
Input capacitance Ciss - 980 tbd pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance Coss - 630 tbd
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance Crss - 33 tbd
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time td(on) - tbd tbd ns
VDD = 350 V, V GS = 10 V, I D = 7.3 A,
RG = 12
Rise time tr - tbd -
VDD = 350 V, V GS = 10 V, I D = 7.3 A,
RG = 12
Turn-off delay time td(off) - tbd tbd
VDD = 350 V, V GS = 10 V, I D = 7.3 A,
RG = 12
Fall time tf - tbd -
VDD = 350 V, V GS = 10 V, I D = 7.3 A,
RG = 12

Semiconductor Group 3 04 / 1998

 SPUX3N60S5
Target data sheet
SPDX3N60S5
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25 C, unless otherwise specified min. typ. max.
Gate Charge Characteristics
Gate-source charge Qgs - tbd - nC
ID = 7.3 A, VDD = 400 V
Gate-drain charge Qgd - tbd -
ID = 7.3 A, VDD = 400 V
Total gate charge QG - 32 tbd
VDD = 400 V, ID = 7.3 A, VGS = 0 to 10 V

Reverse Diode
Continuous source current IS - - 7.3 A
TC = 25 C
Pulsed source current ISM - - 14.6
TC = 25 C
Inverse diode forward voltage VSD - tbd 1.2 V
VGS = 0 V, IF = 7.3 A
Reverse recovery time trr - tbd - ns
VR = 100 V, IF=IS , diF/dt = 100 A/s
Reverse recovery charge Q rr - tbd - C
VR = 100 V, IF=lS , diF/dt = 100 A/s

Semiconductor Group 4 04 / 1998

 SPUX3N60S5
Target data sheet
SPDX3N60S5

Edition 7.97
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstrae 73,
81541 Mnchen
Siemens AG 1997
All Rights Reserved.
Attention please!
As far as patents or other rights of third parties are concerned, liability is only assumed for components,
not for applications, processes and circuits implemented within components or assemblies.
The information describes a type of component and shall not be considered as warranted characteristics.
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For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany
or the Siemens Companies and Representatives worldwide (see address list).
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in question please contact your nearest Siemens Office, Semiconductor Group.
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Critical components 1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or
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1)A critical component is a component used in a life-support device or system whose failure can reasonably be
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i i d i d/ fh lif f h f il i i bl h h h lh f h

Semiconductor Group 5 04 / 1998