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Abstract-A low-voltage (LV) pulse-width modulated cur reverse blocking power devices which would traditionally
rent-source converter (CSC) using reverse-blocking insulated need the series connection of a normal insulated-gate bipolar
gate bipolar transistor (RB-IGBT) devices is proposed in this transistor (IGBT) and a diode, a combination that introduces
paper for megawatt wind energy conversion systems (WECSs) extra conduction and switching power losses. However, with
with a permanent magnet synchronous generator. Benefiting
recent technology advancement of power semiconductors
from using the latest generation of reverse-blocking power
semiconductors, the presented configuration is able to push the
showing significant improvements in reverse-blocking IGBT
switching frequency to a higher range and overcome the tradi (RB-IGBT), there is now a strong opportunity for CSC to
tional drawback of low efficiency in LV CSCs. Design of the emerge as a competitive candidate for low-voltage
configuration, switching scheme, and system control are briefly high-power wind energy conversion systems (WECSs). In
introduced. Semiconductor and converter loss models are de
this paper, a low-voltage PWM CSC using the latest genera
veloped for detailed efficiency study of the proposed system. The
tion RB-IGBT devices is proposed for megawatt WECSs
overall high-efficiency performance of the LV CSC based
WECS is verified by simulation results and comparison with the
using a permanent magnet synchronous generator (PMSG).
state-of-the-art solution using voltage-source converters. Design and analysis of the system configuration is introduced.
Detailed loss analysis based on the device characteristics
I. INTRODUCTION reveals that the proposed solution is able to achieve high
s one of the most promising forms of renewable energy, efficiency over the entire range of operation.
Awind power has grown dramatically worldwide over the II. PROPOSED SYSTEM CONFIGURATION
past two decades. The industry has seen significant technol
ogy developments, where the state-of-the-art in terms of Fig. 1 shows the proposed solution of a high-power
turbine generator/power converter combination is to use low-voltage PMSG WECS using a PWM CSC with
variable-speed full-converter based solutions [1]. While the RB-IGBT devices. Similar to the medium-voltage CSC
once dominant solution of doubly-fed induction generator WECS presented in [J], the system employs a back-to-back
(DFIG) with partial-converter is still very popular, configuration consisting of a generator-side rectifier and a
full-converter based configurations that possess many ad grid-side inverter. The converters are designed to use the
vantages by comparison are increasingly chosen for new latest generation RB-IGBT device with a rating of 1700V and
installations. In this category, although medium-voltage so 1600A [f1, [2]. To share the large rated load current each
lutions have been developed and are now available from a switch in the figure is realized by putting two devices / sem
few manufacturers, the most popular choices are by far the iconductor chips in parallel. A low-voltage multi-pole PMSG
highly mature low-voltage two-level voltage-source con is chosen to interface with the wind turbine and the rectifier to
verters (VSCs) with either induction or synchronous gener form a direct drive configuration. Filter capacitors are needed
ators. Such configurations normally require putting power on both ac sides of the converter to assist commutation and
semiconductors or converters in parallel to share the large filter out high order harmonic currents.
load current in a megawatt design []. Current source con Unlike a medium-voltage CSC employing SGCT devices
verters (CSCs), on the other hand, have been proposed and which can be switched at a maximum frequency of several
studied as possible medium-voltage solutions where sym hundred hertz, the RB-IGBT devices are capable of much
metrical gate-commutated thyristor (SGCT) devices are em higher switching frequencies. A PWM sampling frequency of
ployed [JJ They never made a potentially competitive can 3 kHz is employed here for both the generator- and grid-side
didate in the low-voltage category though, mainly due to lack converters and, when a typical space vector modulation
of power semiconductors with suitable ratings and limitations (SVM) strategy is adopted, the actual device switching fre
on efficiency. Pulse-width modulated (PWM) CSCs require quency is around 1.5 kHz considering the tri-Iogic nature of
such modulation schemes for CSC. Fig. 3 shows the SVM
This research work is sponsored in part by NSERC Canada, National Natural diagram and a few possible switching sequences for the CSC
Science Foundation of China (5150710 I), and Shanghai Science and Tech operation [6]. It has been revealed in [7] that the 3SVM
nology Committee Fund (15ZR1424000).
scheme is superior to the other modulation schemes when
Vder
-l
Fig. 1. PMSG wind energy conversion system using RB-IGBT based PWM CSC.
Rectifier Side
Controller
I--_,......
i'----r-....
.". _--I
.:t Rectifier '---,'---1---1 Inverter 1-+--t'+-..rn'Y"'---i___'i'--+I Grid
icr ieo
Cr C
T T
Inverter
Gating
Inverter Side
Controller
f3 I,(S"S,)
3SVM1(FSM1) I 10 I I" I 1""1 I [0 I
3SVM2(FSM2) I 10 I 1""1 I I" I 10 I
5SVM1(HSM1) I I" 110 11M IMl l lo I I" I
Calculate:
5SVM2(HSM2) I IMl l lo I I" I" 110 11""11 Id, Ie, V" M at rated power and
5SYM3(HSM3) I I" 11""1110 10 I IMI I I" I unit power factor
I,(S"S,)
5SYM6(HSM6) 11""11 I" 1102 1021 I" I IMI I Vc,,, fL."
using (1) using (2)
Fig. 3. SVM scheme and switching sequences for PWM CSC.
tives of both sides, The overall control scheme diagram is Reducing pf of the converter's output by
given in Fig, 2 Q.], optimizing filter parameters
3 n
(11)
I To
ond(T) = T. L' vT(t,T)iT(t)dt where V is the maximum line-to-line voltage, and Ide is the
1 (8) m
magnitude of the dc-link current. It can be seen the switching
Em,x = :
vT t
",,) (A)T(tsw[1 +TCx(Tj -Tre/)] = ExvT(t".,)iT(tsw)
ref
losses in the CSC depends on a number of factors, including
the switching frequency, device characteristics, dc-link cur
rent and the magnitude of the maximum ac voltage.
In contrast, to estimate switching losses in a VSC with
where VT, iT are the instantaneous voltage and current of the
sinusoidal ac line current and linearly fItted loss model for
device as a function of time, t; 1j is the junction temperature,
IGBTs the following formula from [11] can be used
Peond represents the conduction loss and E slI' designates the
switching losses, including turning On and Off losses of both
the transistor (Ton, To}J) and the equivalent diode (mainly the
P'11',IOI_VSC = Is .; (Eon + EO)] + Err) 1m Vdc (12)
reverse recovery loss, DO}J), Acond, Bcond, Ccond are the fitting Device characteristics of the 1700VI1600A RB-IGBT
constants for conduction loss of a given RB-IGBT and IGBT, from Fuji Electric, assembled with the 1700V150A RB-IGBT
Ax, Bx are the fItting coefficients for each switching loss type chips [3], [4], indicates that the RB-IGBT has 120% Eon,
(turning-On loss on, turning-off loss off, and reverse recov 100% E off, and 115% Err of their counterparts for the V-series
ery loss rr) . TCcond, TCx are the temperature coefficients for 1700VI1600A IGBT module, IMBI1600VC-170E. Accord
conduction loss and each switching loss type. Vrejand Trejare ing to (11) and (12), it is not difficult to conclude that a CSC
the reference voltage and temperature for which the datasheet constructed with the new RB-IGBT devices produces less
loss function measure. switching loss than a VSC with the latest generation IGBT
Using the linearly fItted loss model, loss analysis for the device operating under the same modulation index and sam
PWM CSC can be derived. It can be seen from the equations pling frequency.
TABLE II CURVE-FITTING CONSTANTS
FOR RB-IGBT AND IGBT LOSS CALCULATION
Besides power semiconductors, inductors are the most
significant source of power loss in the system since capacitors IGBT
RB-IGBT (1700V/1600A
normally produce minimwn loss. Acccording to [12] and [13], (1700V/1600A) 1MBI1600VC
the inductor power losses can be estimated with -170E)
30
15 15
Loss(kw)
Loss(kw)
Loss(kw)
25
20
10 10
15
5 10
5
0 0 0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
Wind Speed(pu) Wind Speed(pu) Wind Speed(pu)
(b) Total Loss Of Gen-Side CSC and VSC (e) Total Loss Of Line-Side CSC and VSC (h) Total Loss Of CSC and VSC
30 30 60
CSC-Total Loss CSC-Total Loss CSC-Total Loss
VSC-Total Loss VSC-Total Loss VSC-Total Loss
25 25 50
20 20 40
Loss(kw)
Loss(kw)
Loss(kw)
Loss(kw)
15 15 30
10 10 20
5 5 10
0 0 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
Wind Speed(pu) Wind Speed(pu) Wind Speed(pu)
(c) (i)
Efficiency Of Gen-Side CSC and VSC (f) Efficiency Of Line-Side CSC and VSC Efficiency Of CSC and VSC
0.99 0.99 0.98
0.985 0.97
0.98
0.98
0.96
0.975 0.97
0.95
0.97 CSC-Efficiency CSC-Efficiency CSC-Efficiency
VSC-Efficiency 0.96 0.94
VSC-Efficiency VSC-Efficiency
0.965
0.93
0.96 0.95
0.955 0.92
0.94
0.95 0.91
10
4
Loss(kw)
Loss(kw)
8
3
6
2
4
2 1
0 0
0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 1.2
(l) Switching Off Loss Of Gen Side CSC and VSC (m) Reverse Recovery Loss Of Gen Side CSC and VSC
7 7
CSC-Toff Loss CSC-Drr Loss
6 VSC-Toff Loss 6 VSC-Drr Loss
5 5
Loss(kw)
Loss(kw)
4 4
3 3
2 2
1 1
0 0
0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 1.2
Wind Speed(pu) Wind Speed(pu)
Fig. 5. Simulated loss and efficiency of the proposed CSC and VSC WECS.
REFERENCES