PWRLITE LU1014D

High Performance N-Channel POWERJFETTM with PN Diode

Features
Superior gate charge x Rdson product (FOM)
Trench Power JFET with low threshold voltage Vth.
Device fully ON with Vgs = 0.7V
Optimum for Low Side Buck Converters
Excellent for high frequency dc/dc converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
Applications
DC-DC Converters
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
VRM Modules
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. A PN Diode is added for
applications where a freewheeling diode is required.
This product has tin plated leads.

IPAK Lead-free Pin Assignments

D
G

S
1
2 3 N Channel PowerJFET
Case TO251 (IPAK) with PN Diode
Pin Definitions
Pin Number Pin Name Pin Function Description Product Summary
1 Gate Gate. Transistor Gate VDS (V) Rdson () ID (A)
2, 4 Drain Drain. Transistor Drain 24V 0.0065 501
3 Source Source. Transistor Source
Absolute Maximum Ratings
Parameter Symbol Ratings Units
Drain-Source Voltage VDS 24 V
Gate-Source Voltage VGS -12 V
Gate-Drain Voltage VGD -28 V
Continuous Drain Current ID 501 A
Pulsed Drain Current ID 100 A
Single Pulse Drain-to-Source Avalanche Energy at 25C EAS 200 mJ
(VDD= 6VDC, IL=60APK, L=0.3mH, RG=100 )
Junction Temperature TJ -55 to 150C C
Storage Temperature TSTG -65 to 150C C
Lead Soldering Temperature, 10 seconds T 260C C
Power Dissipation (Derated at 25C) PD 69 W

LD1014D Rev 1.05 03-05

Thermal Resistance
Symbol Parameter DPAK Units
Ratings
RJA Thermal Resistance Junction-to-Ambient 90 C/W
RJC Thermal Resistance Junction-to-Case 1.8 C/W

Electrical Specifications
(TA = +25C, unless otherwise noted.)
The denotes a specification which apply over the full operating temperature range.
Symbol Parameter Conditions Min. Typ. Max. Units
Static
BVDSX Breakdown Voltage ID = 0.5 mA 24 28 V
Drain to Source VGS= -4 V
BVGDO Breakdown Voltage IG = -50A -32 -28 V
Gate to Drain
BVGSO Breakdown Voltage IG = -50A -14 -12 V
Gate to Source
RDS(ON) Drain to Source On IG = 40 mA, ID=10A 4.6 6.5 m
Resistance2 IG = 10 mA, ID=10A 4.8 7.0 m
IG = 5 mA, ID=10A 4.9
VGS(TH) Gate Threshold Voltage VDS=0.1 V, ID=250A -1 V
TCVGSTH Temperature Coefficient of VDS=0.1 V, ID=250A -2.6 mV/oC
Gate Threshold Voltage
Dynamic
QGsync Total Gate Charge Sync JFET VDrive =5V,VDS=0.1V (Fig. 2) 9.8 nC
QG Total Gate Charge VDrive =5V, ID=10A,VDS=15V 12.4 nC
QGD Gate to Drain Charge VDS=13.5V to VDS=1.5V 8.1 nC
QGS Gate to Source Charge VGS =-4.5V to VDS=13.5V 4.3 nC
QSW Switching Charge VGS =-2V to VDS=1.5V 9.1 nC
RG Gate Resistance 0.7
TD(ON) Turn-on Delay Time 5.5
TR Rise Time VDD=15V, ID=10A 12.6 ns
TD(OFF) Turn-off Delay VDrive = 5 V 10.3
TF Fall Time Resistive Load 6.6
CISS Input Capacitance 1147
COSS Output Capacitance 467
CGS Gate-Source Capacitance VDS=10V, VGS= -5 V, 1MHz. 784 pF
CGD Gate-Drain Capacitance (see Fig. 4) 363
CDS Drain-Source Capacitance 104

PN Diode
IR Reverse Leakage VR=20V, Vgs = -4V 0.3 mA
VF Forward Voltage IF = 1 A 812 mV
VF Forward Voltage IF = 10 A 932 mV
VF Forward Voltage IF = 20 A 1010 mV
Qrr Reverse Recovery Charge Is = 10 A di/dt = 100A/us, 7 nC
Trr Reverse Recovery Time Is = 10 A di/dt = 100A/us, 13.3 ns
Notes:
1. Current is limited by bondwire; with an Rthjc = 1.8 oC/W the chip is able to carry 80A.
2. Pulse width <= 500s, duty cycle < = 2%

2 Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA

Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1014D Product Specification
Typical Operating Characteristics
(TA = +25C, unless otherwise noted.)

LD1014D, Qg vs Vgs, VDS=0.1V.

8
1.0
7 0.5
RDS(mOhms)

0.0
6
-0.5
-1.0
5

Vgs(V)
-1.5

4 -2.0
-2.5
3 -3.0
-3.5
2 -4.0
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 -4.5
1 3 5 7 9 11 13 15
IG(A) Qg(nC)

Figure 1 RDSON vs Gate Current at ID 10A Figure 2 Gate Charge Qgsync for VDS=0.1V

50
LD1014D Capacitance vs. Vds, Vgs=-5v
45
1600
40
1400
35
1200 Ciss
30
ID (mA)

25 1000
C (pF)

20 800
15 600 Coss
10 400
5 Crss
200
0
0
0 5 10 15 20 25 30 0 5 10
10 15
15 20
20 25
25
V D S (V ) Vds (volts)

Figure 3 Breakdown Voltage Vds vs Id Figure 4 Capacitance vs Drain Voltage Vds

0.10 ID vs VGS, VDS=12V and VDS=0.1V

0.09 0.50
0.08 0.45
0.07 0.40 VDS = 12V
0.06 0.35
IG(A)

0.05 0.30
ID(A)

VDS = 0.1V
0.04 0.25
0.20
0.03
0.15
0.02
0.10
0.01
0.05
0.00
0.00
0.00 0.20 0.40 0.60 0.80
-5 -4 -3 -2 -1 0 1
VGS(V)
VGS(V)

Figure 5 IG vs Gate Voltage VGS Figure 6 Transfer Characteristic

Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA 3

Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1014D Product Specification
 Typical Operating Characteristics
(TA = +25C, unless otherwise noted.)
1.8 I G = 1mA ID vs VDS LD1014D, Tc = 25 o C
50
I G = 1A
1.7 45
V GS = 0.5V

1.6
Normalized Rds

40

35 V GS = 0V
1.5
30
1.4

ID(A)
25
1.3 20 V G S =- 0.5V

1.2 15

10
1.1 V G S = -1V
5
1.0 0
0 50 100 150 0 1 2 3 4 5
T emp(C) VDS(V)

Figure 7 RDSON =f(T); ID = -10A; IG = 40mA Figure 8 ID vs VDS Characteristics

0 100
-2
10s
-4
Id, Drain Current (A)

-6 Ig = 40mA
ID (Amps)

Single Pulse 100s

-8
10 Tc = 25C
-10
-12 1ms
-14 10ms
Rdson Limit
-16 DC
Thermal Limit
-18 Package Limit
1
-20
0.1 1 10 100
-1.10 -1.00 -0.90 -0.80 -0.70 -0.60 -0.50
Vds, Drain-to-Source Voltage (V)
VDS (Volts)

Figure 9 PN Diode Voltage vs Current Figure 10 Safe Operating Area

Total Power Dissipation (W) ZthJA = f(tp) (parameter D= tp/T)

75

1.E+00
60 D = 0.5

0.2
45
Ptot (W)

ZthJA (K/W)

0.1
30 1.E-01
0.05 P(pk)
tp
0.02
15 T
0.01 Note:
1. Duty Factor D = tp/T
Single Pulse 2. Peak Tj = P(pk)*ZthJA + TA
0
1.E-02
0 50 100 150 200 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Temperature (C) tp (s)

Figure 11 Total Power Dissipation Figure 12 Normalized Thermal Response

4 Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA

Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1014D Product Specification
Ordering Information
Product Number PN Marking Package Notes:
LU1014D LU1014D TO251 (IPAK) This product is Pb-Free and has Tin Plated leads

Package and Marking Information

E A
DIMENSIONS
C2
mm. inch B2
DIM.
TYP. MIN. MAX. TYP. MIN. MAX.

L2
A 2.19 2.40 0.086 0.094
A1 0.89 1.14 0.035 0.045 LU1014D

IPAK
XXXXX

D
XXXX
b 0.76 1.14 0.030 0.045

L3
b1 0.64 0.90 0.025 0.035

L1
B2 5.20 5.46 0.205 0.215
C 0.45 0.60 0.017 0.023

L
L
C2 0.45 0.60 0.017 0.023
D 5.97 6.22 0.235 0.244 C
e
D1 5.64 0.222 A1
b
E 6.35 6.73 0.250 0.265 b1
e 2.28 0.090
Back View
H 13.19 13.06 13.32 0.514 0.525
L 5.95 7.6 0.234 0.300
L1 2.03 2.29 0.079 0.090

D1
L3 0.63 1.14 0.025 0.045

Life Support Policy

LOVOLTECHs PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH, Inc. As used herein:
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or
sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling can
be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information
Preliminary
No Identification Needed
In definition or in This datasheet contains the design specifications for product development.
Design Specifications may change without notice.
Initial Production This datasheet contains preliminary data; additional and application data will be
published at a later date. Lovoltech, Inc. reserves the right to make changes at any
time without notice in order to improve design.
In Production This datasheet contains final specifications. Lovoltech reserves the right to make
changes at any time without notice in order to improve the design.

Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA 5

Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1014D Product Specification