SP8M3

Transistors

Switching
SP8M3

zFeatures zExternal dimensions (Unit : mm)

1) Low on-resistance.
SOP8
2) Built-in G-S Protection Diode.
5.00.2
3) Small and Surface Mount Package (SOP8).

(5)
(8)
3.90.15
6.00.3

0.50.1
zApplication
Power switching, DC / DC converter.

(1)

(4)

Max.1.75
0.20.1

1.50.1
0.40.1

0.15
1.27
0.1
Each lead has same dimensions

zAbsolute maximum ratings (Ta=25C) zEquivalent circuit

Limits (8) (7) (6) (5) (8) (7) (6) (5)
Parameter Symbol Unit
Nchannel Pchannel
Drain-source voltage VDSS 30 30 V
Gate-source voltage VGSS 20 20 V
Continuous ID 5.0 4.5 A
Drain current 1 2 2
Pulsed IDP 20 18 A (1) (2) (3) (4)

Source current Continuous IS 1.6 1.6 A (1) Tr1 (Nch) Source

(Body diode) Pulsed ISP 20 18 A 1 (2) Tr1 (Nch) Gate
1 1
(3) Tr2 (Pch) Source
Total power dissipation PD 2 W 2
(4) Tr2 (Pch) Gate
Channel temperature Tch 150 C (1) (2) (3) (4)
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
Storage temperature Tstg 55 to +150 C (7) Tr1 (Nch) Drain
1 ESD PROTECTION DIODE
1 Pw10s, Duty cycle1% 2 BODY DIODE (8) Tr1 (Nch) Drain
2 MOUNTED ON A CERAMIC BOARD.
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.

zThermal resistance (Ta=25C)

Parameter Symbol Limits Unit

Channel to ambient Rth (ch-a) 62.5 C / W
MOUNTED ON A CERAMIC BOARD.

Rev.A 1/5
 SP8M3
Transistors
N-ch
zElectrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage IGSS 10 A VGS=20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30 V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS 1 A VDS=30V, VGS=0V
Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA
36 51 ID=5.0A, VGS=10V
Static drain-source on-state
RDS (on) 52 73 m ID=5.0A, VGS=4.5V
resistance
58 82 ID=5.0A, VGS=4V

Forward transfer admittance Yfs 3.0 S ID=5.0A, VDS=10V

Input capacitance Ciss 230 pF VDS=10V

Output capacitance Coss 80 pF VGS=0V
Reverse transfer capacitance Crss 50 pF f=1MHz
Turn-on delay time td (on) 6 ns ID=2.5A, VDD 15V

Rise time tr 8 ns VGS=10V

Turn-off delay time td (off) 22 ns RL=6.0

Fall time tf 5 ns RG=10

Total gate charge Qg 3.9 5.5 nC VDD 15V

Gate-source charge Qgs 1.1 nC VGS=5V

Gate-drain charge Qgd 1.4 nC ID=5.0A

Pulsed

zBody diode characteristics (Source-Drain Characteristics) (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VSD 1.2 V IS=6.4A, VGS=0V

Pulsed

Rev.A 2/5
 SP8M3
Transistors
P-ch
zElectrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage IGSS 10 A VGS= 20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30 V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS 1 A VDS=30V, VGS=0V
Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA
40 56 ID= 4.5A, VGS= 10V
Static drain-source on-state
RDS (on) 57 80 m ID= 2.5A, VGS= 4.5V
resistance
65 90 ID= 2.5A, VGS= 4.0V

Forward transfer admittance Yfs 3.5 S ID= 2.5A, VDS= 10V

Input capacitance Ciss 850 pF VDS= 10V

Output capacitance Coss 190 pF VGS=0V
Reverse transfer capacitance Crss 120 pF f=1MHz
Turn-on delay time td (on) 10 ns ID= 2.5A, VDD 15V

Rise time tr 25 ns VGS= 10V

Turn-off delay time td (off) 60 ns RL=6.0

Fall time tf 25 ns RG=10

Total gate charge Qg 8.5 nC VDD 15V

Gate-source charge Qgs 2.5 nC VGS= 5V

Gate-drain charge Qgd 3.0 nC ID= 4.5A

Pulsed

zBody diode characteristics (Source-Drain Characteristics) (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VSD 1.2 V IS= 1.6A, VGS=0V

Pulsed

Rev.A 3/5
 SP8M3
Transistors
N-ch
zElectrical characteristic curves
1000 10000 10
Ta=25C Ta=25C Ta=25C

GATE-SOURCE VOLTAGE : VGS (V)

f=1MHz VDD=15V 9 VDD=15V
VGS=0V VGS=10V ID=5A
8
RG=10 RG=10

SWITCHING TIME : t (ns)

CAPACITANCE : C (pF)

1000 tf
Pulsed 7 Pulsed
Ciss 6
100 100 td (off) 5
4
Coss
tr 3
Crss 10
2
td (on) 1
10 1 0
0.01 0.1 1 10 100 0.01 0.1 1 10 0 1 2 3 4 5 6 7 8
DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC)

Fig.1 Typical Capacitance Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics
vs. Drain-Source Voltage

10 300 10
ON-STATE RESISTANCE : RDS (on) (m)

VDS=10V Ta=25C VGS=0V

Pulsed Pulsed Pulsed
250 Ta=125C

SOURCE CURRENT : Is (A)

DRAIN CURRENT : ID (A)

Ta=75C
1 Ta=125C
Ta=25C
Ta=75C 1 Ta= 25C
200
Ta=25C ID=5A
STATIC DRAIN-SOURCE

Ta= 25C
ID=2.5A
0.1 150

100 0.1
0.01
50

0.001 0 0.01
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 0.0 0.5 1.0 1.5
GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source Fig.6 Source Current vs.
On-State Resistance vs. Source-Drain Voltage
Gate-Source Voltage

1000 1000 1000

ON-STATE RESISTANCE : RDS (on) (m)

ON-STATE RESISTANCE : RDS (on) (m)

ON-STATE RESISTANCE : RDS (on) (m)

VGS=10V VGS=4.5V VGS=4V

Ta=125C Ta=125C Ta=125C
Pulsed Pulsed Ta=75C
Pulsed
Ta=75C Ta=75C
Ta=25C Ta=25C Ta=25C
Ta= 25C Ta= 25C Ta= 25C
100 100 100
STATIC DRAIN-SOURCE

STATIC DRAIN-SOURCE

STATIC DRAIN-SOURCE

10 10 10

1 1 1
0.1 1 10 0.1 1 10 0.1 1 10
DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A)

Fig.7 Static Drain-Source Fig.8 Static Drain-Source Fig.9 Static Drain-Source

On-State Resistance On-State Resistance On-State Resistance
vs. Drain Current () vs. Drain Current () vs. Drain Current ()

Rev.A 4/5
 SP8M3
Transistors
P-ch
zElectrical characteristic curves
10000 10000 8
Ta=25C Ta=25C Ta=25C

GATE-SOURCE VOLTAGE : VGS (V)

f=1MHz VDD= 15V 7 VDD= 15V
VGS=0V VGS= 10V ID= 4.5A
RG=10 RG=10

SWITCHING TIME : t (ns)

CAPACITANCE : C (pF)

1000 6
Pulsed Pulsed
1000
Ciss tf 5
td (off)
100 4

Coss 3
100
Crss td (on)
10 2
tr
1

10 1 0
0.01 0.1 1 10 100 0.01 0.1 1 10 0 1 2 3 4 5 6 7 8 9 10
DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC)

Fig.1 Typical Capacitance Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics
vs. Drain-Source Voltage

10 200 10
ON-STATE RESISTANCE : RDS (on) (m)

VDS= 10V Ta=25C VGS=0V

Pulsed Pulsed Pulsed

SOURCE CURRENT : IS (A)

Ta=125C
DRAIN CURRENT : ID (A)

Ta=125C Ta=75C
1 150 ID=4.5A
Ta=75C Ta=25C
Ta=25C ID=2.0A 1 Ta= 25C
STATIC DRAIN-SOURCE

Ta= 25C

0.1 100

0.1
0.01 50

0.001 0 0.01
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 0.0 0.5 1.0 1.5
GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source Fig.6 Source Current vs.
On-State Resistance vs. Source-Drain Voltage
Gate-Source Voltage

1000 1000 1000

ON-STATE RESISTANCE : RDS (on) (m)

ON-STATE RESISTANCE : RDS (on) (m)

ON-STATE RESISTANCE : RDS (on) (m)

VGS= 10V VGS= 4.5V VGS= 4V

Pulsed Pulsed Pulsed

Ta=125C Ta=125C
Ta=125C Ta=75C Ta=75C
STATIC DRAIN-SOURCE

STATIC DRAIN-SOURCE

STATIC DRAIN-SOURCE

Ta=75C Ta=25C Ta=25C

Ta=25C Ta= 25C Ta= 25C
100 Ta= 25C 100 100

10 10 10
0.1 1 10 0.1 1 10 0.1 1 10
DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A)

Fig.7 Static Drain-Source Fig.8 Static Drain-Source Fig.9 Static Drain-Source

On-State Resistance On-State Resistance On-State Resistance
vs. Drain Current () vs. Drain Current () vs. Drain Current ()

Rev.A 5/5
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1