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Applications
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PFC circuits
Symbol Test Conditions Characteristic Values
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Uninterruptible power supplies (UPS)
(TJ = 25C, unless otherwise specified)
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Switched-mode and resonant-mode
min. typ. max. power supplies
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AC motor speed control
VGE(th) IC = 250 A, VCE = VGE 3.0 5.0 V
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DC servo and robot drives
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DC choppers
ICES VCE = VCES TJ = 25C 50 A
VGE = 0 V TJ = 150C 1 mA
Advantages
IGES VCE = 0 V, VGE = 20 V 100 nA
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High power density
VCE(sat) IC = 50 A, VGE = 15 V TJ = 25C 2.1 2.5 V z
Very fast switching speeds for high
TJ = 125C 1.8 V frequency applications
gfs IC = 50 A; VCE = 10 V, 40 58 S
Pulse test, t 300 s, duty cycle 2 %
P
Cies 3900 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 280 pF
Cres 97 pF
Qg 146 nC
e
Qge IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 28 nC
Dim. Millimeter Inches
Qgc 50 nC Min. Max. Min. Max.
A 4.7 5.3 .185 .209
td(on) 18 ns A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
tri Inductive load, TJ = 25C 25 ns b 1.0 1.4 .040 .055
td(off) IC = 50 A, VGE = 15 V 95 150 ns b1 1.65 2.13 .065 .084
VCE = 400 V, RG = Roff = 2 b2 2.87 3.12 .113 .123
tfi 35 ns C .4 .8 .016 .031
D 20.80 21.46 .819 .845
Eoff 0.48 0.8 mJ E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
td(on) 18 ns L 19.81 20.32 .780 .800
L1 4.50 .177
tri Inductive load, TJ = 125C 25 ns
P 3.55 3.65 .140 .144
Eon IC = 50 A, VGE = 15 V 0.45 mJ Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
td(off) VCE = 400 V, RG = Roff = 2 130 ns S 6.15 BSC 242 BSC
tfi 80 ns
Eoff 1.2 mJ TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 60N60C2
IXGT 60N60C2
I C - Amperes
60 125
50 100
40 7V
75
30
50
20
5V 25
10 5V
0 0
0.5 1 1.5 2 2.5 3 3.5 1 1.5 2 2.5 3 3.5 4 4.5
V CE - Volts V CE - Volts
70 7V 1
I C - Amperes
60
0.9
50
I C = 50A
0.8
40
30 5V 0.7
I C = 25A
20
0.6
10
0 0.5
0.5 1 1.5 2 2.5 3 3.5 25 50 75 100 125 150
V CE - Volts TJ - Degrees Centigrade
4 150
I C - Amperes
3.5 125
VCE - Volts
3 100
2.5 75
I C = 100A
T J = 125 C
2 50
50A 25 C
1.5 25A 25 -40 C
1 0
5 6 7 8 9 10 11 12 13 14 15 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5
V GE - Volts V GE - Volts
100 6
90 TJ = 125 C
T J = -40 C VGE = 15V I C = 100A
80
5
25 C
VCE = 400V
70
E off - milliJoules
125 C 4
g f s - Siemens
60
I C = 75A
50 3
40
2 I C = 50A
30
20 I C = 25A
1
10
0 0
0 25 50 75 100 125 150 175 200 2 4 6 8 10 12 14 16
I C - Amperes R G - Ohms
5 5
R G = 2 Ohms R G = 2 Ohms
R G = 10 Ohms - - - - - I C = 100A
R G= 10 Ohms - - - - -
4 VG E = 15V 4
VG E = 15V
VC E = 400V
E off - MilliJoules
VC E = 400V
E off - milliJoules
T J = 125 C
3 3
I C = 75A
2 2
I C = 50A
T J = 25 C
1 1
I C = 25A
0 0
20 30 40 50 60 70 80 90 100 25 50 75 100 125
I C - Amperes TJ - Degrees Centigrade
15 10000
f = 1M Hz
VC E = 300V
I C = 50A
12 C ies
I G = 10mA
Capacitance - pF
1000
9
VG E - Volts
C oes
6
100
C res
3
0 10
0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 40
Q G - nanoCoulombs V CE - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 60N60C2
IXGT 60N60C2
0 .3
0 .25
R (th) J C - (C/W)
0 .2
0 .15
0.1
0 .05
1 10 10 0 10 0 0
Puls e W idth - millis ec onds