BJT inductive load.

Figure 2.1 H bridge.

In figure 2, well be using the same digital system shown in figure 1a. Vcc is now 6 Volts. The
motor is 6 V, 800 m A.

Design.

= 800
Based on ,

2 = 6 = 800

By KLV applied to the loop around the two Q2 and Q6 through ground, we get,

= 2 + + 6 (2.1)

Solving 2.1 for and substituting Collector-Emitter Saturation Voltage ( ) values for
TIP32 and TIP110 according datasheet,

= 6 2.5 1.2 = 2.3

 5
Design condition 1 =

From the design condition 1, solving for 2 and substituting the known 2 and 2 for
TIP32 according datasheet,

5 2
2 = = 160
2

Now, using the same considerations for TIP110,

5 6
6 = = 4
6

The Thevenin equivalent network for TIP32 is as shown in figure 2.2

Figure 2.2 Thevenin equivalent circuit.

Where:

( 1 )4
= (2.2)
4 + 5

4 5
11 = = (2.3)
4 + 5

Design condition 2 = 2

From design condition 2, we get the voltage required to reach the saturation condition,

= 6 1.8 = 4.2

Which is consistent with the 5 V supplied from the digital system.

By KVL, applied to the loop in figure 3, we get,

2 2 = 0 (2.4)
If 5 10 4, and 1 = 0.7, from equation 2.2,

= 0.1( 1 )

Thus,
= (6 0.7) = 0.53

From equation 2.4, solving for Rth,

2 6 0.53 1.8
= = = 22.94
2 160

The commercial value for Rth doesnt exist so well be using a 22 resistor. We assume
5 10 4, so from equation 2.3 Rth R4, for that matter:

R4 = R7 = 22 and R5 = R6 = 220

Finally, applying KVL to the loop in the base of BC337, we get,

1 3 = 0

Solving for R3,

1
3 =

2
Design condition 3 =

Substituting values and using design condition 3,

5 2.8
3 = = 1375
2(800)
1000

Theres no 1375 resistor, therefore:

R3 = R9 = 1200

Similarly, applying KVL for the loop in the base of TIP110, and solving for the base resistor,

5
8 =

Substituting values and using design condition 3,

5 2.8
8 = = 2500
2(160)
250
Theres no 2500 resistor, therefore:
R8 = R10 = 2200

The current through the diodes should be less than the current through the motor, since
the current through the motor is 800 m A well using 1N4006, threshold of this diode is 800
V which is almost twice Vcc.