MCC



omponents
20736 Marilla Street Chatsworth S8550

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Features
TO-92 Plastic-Encapsulate Transistors
Capable of 0.625Watts(Tamb=25 OC) of Power Dissipation. PNP Silicon
Collector-current 0.5A
Collector-base Voltage 40V Transistors
Operating and storage junction temperature range: -55OC to +150 OC
Marking Code: S8550

Pin Configuration
TO-92
A E

C
BE

Electrical Characteristics @ 25OC Unless Otherwise Specified

B
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage 40 --- Vdc
(IC=100uAdc, IE =0)
V(BR)CEO Collector-Emitter Breakdown Voltage 25 --- Vdc
(IC=0.1mAdc, IB =0)
V(BR)EBO Emitter-Base Breakdown Voltage 5.0 --- Vdc
C
(IE =100uAdc, IC=0)
ICBO Collector Cutoff Current --- 0.1 uAdc
(VCB=40Vdc, IE =0)
ICEO Collector Cutoff Current --- 0.2 uAdc
(VCE=20Vdc, IB =0)
IEBO Emitter Cutoff Current --- 0.1 uAdc
(VEB =3.0Vdc, IC=0)
ON CHARACTERISTICS D
hFE(1) DC Current Gain 85 300 ---
(IC=50mAdc, V CE=1.0Vdc)
hFE(2) DC Current Gain 40 --- ---
(IC=500mAdc, V CE=1.0Vdc)
VCE(sat) Collector-Emitter Saturation Voltage --- 0.6 Vdc
(IC=500mAdc, IB =50mAdc)
G
VBE(sat) Base-Emitter Saturation Voltage --- 1.2 Vdc
(IC=500mAdc, IB =50mAdc) DIMENSIONS
VEB Base- Emitter Voltage --- 1.4 Vdc
INCHES MM
(IE =100mAdc)
DIM MIN MAX MIN MAX NOTE
SMALL-SIGNAL CHARACTERISTICS A .175 .185 4.45 4.70
B .175 .185 4.46 4.70
fT Transistor Frequency 150 --- MHz C .500 --- 12.7 ---
(IC=20mAdc, V CE=6.0Vdc, f=30MHz) D .016 .020 0.41 0.63

CLASSIFICATION OF HFE (1) E

G
.135
.095
.145
.105
3.43
2.42
3.68
2.67
Rank B C D
Range 85-160 120-200 160-300

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Revision: 2 2003/06/30
This datasheet has been downloaded from http://www.digchip.com at this page