Banasthali Vidyapith

Department of Electronics
Course Handout (Session 2017-18)

M.Tech. I Sem (VLSI Design)

Course title High Power Semiconductor Devices
Total number of Lectures 45
Weekly Load 4 hr
Faculty Name Hemant Kumar Sharma

Text Books/Reference Books

1. Physics of Semiconductor Devices, 2nd Edition, Willey Publication 1981.

2. Semiconductor Devices, Basic Principles, Jasprit Singh, Wiley Publication.
3. Principles of Semiconductor Devices, Sima Dimitrijev, Oxford University Press.
4. Principles of Power Electronics, John G Kassakian, Mrtin F Schlecht, G C
Verghese,Pearson Publications.
5. Power Electronics, Dr P S Bhimra, Khanna Publications.
6. Fundamentals of Power Semiconductor Devices by B. Jayant Baliga, Springer
Publications.
7. Semiconductor Physics and Devices, Basic Principles, Donald A Neamen, TMH
Publications
8. Power Electronics by M D Singh, TMH Publications

Continuous Assessment

S.No. Component Duration (In MM Date Syllabus

Hours)
1 Class Test 1 1 10 3rd week of August Section A
2 Class Test 2 1 10 3rd Week of October Section B
3 Periodical 1 1.5 10 As per schedule Section A &
B
4 Assignment 1 Week 10 Tutorials will be
given in class
5 Attendance 10
 Banasthali Vidyapith
Department of Electronics
Course Handout (Session 2017-18)

Lecture Plan

Lecture Learning Objective Topics to be covered Reference

Number Books
1-4 Basic Introduction Theory of BJT and MOS T1,T7
5-7 Device Model Small signal models of bipolar and T2,T7
MOS transistors, Gummel Poon
Model
8-10 High current effects in High level injection, non uniform T2,T3
diodes current distribution under high
current injection
11-13 Power BJT Introduction of Power BJT T5, T8
14-16 Effects in power BJT High current effects in transistor, T3.T6
kirk effect, Crowding
17-19 Secondary effects in Pinch in effects, Secondary break T1,T7
power BJT down
20-23 Operation of BJT Operation of BJT under High T1,T7
frequency and high current
24-27 SCR Basic introduction, working T5, T8
operation, relation between shorted
emitter and dv/dt ratings
28-31 Other high power GTO operation, Inverter grade SCR T5
devices
32-35 Diffusion techniques Diffusion techniques for SCRs T8
36-39 Power VMOS device Basic introduction, sturucture Heat T1,T4
transfer in power devices
40-45 Power MOS devices VMOS, DMOS devices, basic T1,T5
operation, device structures and
models, Device packaging