41 ZFRi

2 iZ
3.85x lO 24 2010 (99.999999%)

l o ;

()

1953Calvin Fuller Gerald Pearson

Il Daryl Chapin ;

6% P-N (thin film)

| |
Junction (bulk)

6%)

(Dye-sensitized solar cell , DSSC) CIGS

;:<\: (generation) :

(band

; gap) 1. 0- 1. 7eV'
(two-step dip-coating) crGS( copper indium gallium

-(UV-Ozone) diselenide) CdTe(cadmium telluride)

f 11& ;

(photoelectrochemical)

(organic solar cell) 20.3% '

ill(quantum dot solar cell)

() ;

1 16 222 20142 119


41 ZFRi
2 iZ
3.85x lO 24 2010 (99.999999%)

l o ;

()

1953Calvin Fuller Gerald Pearson

Il Daryl Chapin ;

6% P-N (thin film)

| |
Junction (bulk)

6%)

(Dye-sensitized solar cell , DSSC) CIGS

;:<\: (generation) :

(band

; gap) 1. 0- 1. 7eV'
(two-step dip-coating) crGS( copper indium gallium

-(UV-Ozone) diselenide) CdTe(cadmium telluride)

f 11& ;

(photoelectrochemical)

(organic solar cell) 20.3% '

ill(quantum dot solar cell)

() ;

1 16 222 20142 119

 tf[~
12

,
( )DSSC

(1)

(2)

<0.1% 0 1991 Michael

o (3)
Grtzel DSSC
(4)
TiO

TiO (5)

1 DSSC
(extinction coefficient)

12mA cm- 2 DSSC;

7.12 % [1) 0 DSSC
2S+ + 31 2S + 13
DSSC{ 7.12%
@
DSSC

(dye-sensitized solar cell, 4 ( )DSSC
DSSC) 20
/:; + 2e 31
DSSC 2
: i DSSC 20 2 (Fermi
:
DSSC level)
@ (S)
1
(S*)
DSSC ( )DSSC 5
S+hu S'
. DSSC
@
DSSC 1 : (1)

(2)



Y S+ + eii0 2 (recombination)
DSSC o (3)
@ (back reaction) .2 6 7
(4)
@
i . (5)

eTi02 ~ ecathode {

@ S+ + eii0 2 S

222 20142 121

 tf[~
12

,
( )DSSC

(1)

(2)

<0.1% 0 1991 Michael

o (3)
Grtzel DSSC
(4)
TiO

TiO (5)

1 DSSC
(extinction coefficient)

12mA cm- 2 DSSC;

7.12 % [1) 0 DSSC
2S+ + 31 2S + 13
DSSC{ 7.12%
@
DSSC

(dye-sensitized solar cell, 4 ( )DSSC
DSSC) 20
/:; + 2e 31
DSSC 2
: i DSSC 20 2 (Fermi
:
DSSC level)
@ (S)
1
(S*)
DSSC ( )DSSC 5
S+hu S'
. DSSC
@
DSSC 1 : (1)

(2)



Y S+ + eii0 2 (recombination)
DSSC o (3)
@ (back reaction) .2 6 7
(4)
@
i . (5)

eTi02 ~ ecathode {

@ S+ + eii0 2 S

222 20142 121


r
rv

3.

gm \R

@ V

A @
DSSC N. Papageorgiou

@
(Pt)

-u JX

/
(H , PtCI 6 HO) (isopropanol)
5mM j9I (spin

coating) (spray coating)

(
0
385 C 15

(4J ~ f
2 DSSC(' \l )

!J) ( U

I ) S. S. Kim
()
1:; + 2e2 3r

1:; + 2e;ubstrate 3r :

1:; + 2e- 3r (sputter) [51 (pulse curren t)

[] (thermal decompose) X.

(dark current) Fang 3[5.6[

10nm /

i (charge transfer

DSSC resistance , Rc

DSSC 1 : (grain size)

1. PVP-Pt PVP-Pt

DSSC() (exchange current [ PVP(poly-vinylpyrrolione)

density)

2. (activation overpotential) (>100 /cm') (NaBH)PVP

( 1 - ) (colloidal)

122 222 20142 123


r
rv

3.

gm \R

@ V

A @
DSSC N. Papageorgiou

@
(Pt)

-u JX

/
(H , PtCI 6 HO) (isopropanol)
5mM j9I (spin

coating) (spray coating)

(
0
385 C 15

(4J ~ f
2 DSSC(' \l )

!J) ( U

I ) S. S. Kim
()
1:; + 2e2 3r

1:; + 2e;ubstrate 3r :

1:; + 2e- 3r (sputter) [51 (pulse curren t)

[] (thermal decompose) X.

(dark current) Fang 3[5.6[

10nm /

i (charge transfer

DSSC resistance , Rc

DSSC 1 : (grain size)

1. PVP-Pt PVP-Pt

DSSC() (exchange current [ PVP(poly-vinylpyrrolione)

density)

2. (activation overpotential) (>100 /cm') (NaBH)PVP

( 1 - ) (colloidal)

122 222 20142 123

 412
l

pvpftiJ (

FTO)
[1 01 0 (roll-to-roll)

PVP-Pt

Indium Tin Oxide coated polyethylene

3 (a) (b) SEM Naphthalate(lTO-PEN)[JIndium Tin Oxide
coated polyethylene Terephthalate(ITO-
PET) .
PVP Pt

181 4 150'C ;

()
(conditioner)

PVP PVP
() DSSC
Pt PVP-Pt

Pilx() . G. Wang

XPS
PVP {
l' DSSC1

1111 , Espen Olsen

DSSC
c:::a ITO grain
Naked ITO I ( ~~ Conditioner PtI4
; .. PVP pped Pt
'~h~ >UHhUHh

MPN *ff
Conditioned ITO | )
AES
;
pvp- pped Pt pi\ v. Ztt .lt4.
n ITO I (c) DSSC PVP

[ PVP-Pt FTO
;

Heating treatment 4 ) 4l6)Q, 9;l.Qn
(300'C 5min Twice) I () ()

DSSC [

4 i.' DSSC (325'C) .

124 222 20142 125

 412
l

pvpftiJ (

FTO)
[1 01 0 (roll-to-roll)

PVP-Pt

Indium Tin Oxide coated polyethylene

3 (a) (b) SEM Naphthalate(lTO-PEN)[JIndium Tin Oxide
coated polyethylene Terephthalate(ITO-
PET) .
PVP Pt

181 4 150'C ;

()
(conditioner)

PVP PVP
() DSSC
Pt PVP-Pt

Pilx() . G. Wang

XPS
PVP {
l' DSSC1

1111 , Espen Olsen

DSSC
c:::a ITO grain
Naked ITO I ( ~~ Conditioner PtI4
; .. PVP pped Pt
'~h~ >UHhUHh

MPN *ff
Conditioned ITO | )
AES
;
pvp- pped Pt pi\ v. Ztt .lt4.
n ITO I (c) DSSC PVP

[ PVP-Pt FTO
;

Heating treatment 4 ) 4l6)Q, 9;l.Qn
(300'C 5min Twice) I () ()

DSSC [

4 i.' DSSC (325'C) .

124 222 20142 125


f
ITO-PEN 70"C 2% { suriyn

PVP( 8000) 5

0.12SM NaBH 4S"C 5

()
:

PtC/~-+ BH4 + 3H2 0
Pt + B01- + 6C/- + 2H 2 + 6H+I I-V

H '
pvP-Pt ITO-PEN
ITO i

CO Ho IV

i - J-V

PVP l (short circuit current , I .J

Pt; (short circuit current density,

( )PVP-Pt ITO-PEN ( )DSSC J)(open circuit voltage , V~)

ITO-PEN suriyn( (fill factor, FF)

( )PVP-Pt 10 (efficiency)

PVP-Pt 5 100"C J-V

i!lq 6 J

(
ITO-PEN

.. ITO

20

JU
PVP-Pt
E 15

<
1 _J-Vcurve
i P
e
w
PVp.Pt ITO-PEN
3

55
E
V I
-
0.0 0.2 0 .4
-0.64 Voc 0.8
Voltage (V)

5 6 DSSCJ-V()()

126 222 20142 121


f
ITO-PEN 70"C 2% { suriyn

PVP( 8000) 5

0.12SM NaBH 4S"C 5

()
:

PtC/~-+ BH4 + 3H2 0
Pt + B01- + 6C/- + 2H 2 + 6H+I I-V

H '
pvP-Pt ITO-PEN
ITO i

CO Ho IV

i - J-V

PVP l (short circuit current , I .J

Pt; (short circuit current density,

( )PVP-Pt ITO-PEN ( )DSSC J)(open circuit voltage , V~)

ITO-PEN suriyn( (fill factor, FF)

( )PVP-Pt 10 (efficiency)

PVP-Pt 5 100"C J-V

i!lq 6 J

(
ITO-PEN

.. ITO

20

JU
PVP-Pt
E 15

<
1 _J-Vcurve
i P
e
w
PVp.Pt ITO-PEN
3

55
E
V I
-
0.0 0.2 0 .4
-0.64 Voc 0.8
Voltage (V)

5 6 DSSCJ-V()()

126 222 20142 121

 41

(; 1

(9)

(resistan )

; FF D
( citance) +12

pmax
(inductance) -12
JJVOC;
() (a) (b)

{
.7 (a) (b)
Pm Jm"Vm Jsc"1 r"FF
(i mpedance) (B)
==- =--"'=- (A)
Pin Pin

Ro
() (symmetric cell) (Nernst diffusion
(EIS) (C) ( )PVP-Pt
resistance)

V(t) Vmsin( t) EIS8 PVP1'NaBH

Z()= = (B)
I(t) Imsin( t 0) + Nyq st plot '(X11) TEM

V' + jV" R RICPE

Z() = Z' + jZ" =
/' + j l"
(c)
3-5nm' NaBH

(AC) (DC)j

e rna Ro

[16]

EIS fH 7(a)
( )PVP-Pt ITO-PEN

( 5mV lOmV) ITO-PEN

/2 SEM 10

7(b) R

(serIes resIStance);RCharge transfer

20-100nm InO;
resistance) ; CPE Z' (ohm-cm') PVP-Pt
Rs : series resistance
(9) charge transfer resistance
IOnm'
Ro : Nernst diffusion resislance
(constant phase element) R"

1 CPE .8 Nyquist plot lOOnm

128 22 2 2 142 29
 41

(; 1

(9)

(resistan )

; FF D
( citance) +12

pmax
(inductance) -12
JJVOC;
() (a) (b)

{
.7 (a) (b)
Pm Jm"Vm Jsc"1 r"FF
(i mpedance) (B)
==- =--"'=- (A)
Pin Pin

Ro
() (symmetric cell) (Nernst diffusion
(EIS) (C) ( )PVP-Pt
resistance)

V(t) Vmsin( t) EIS8 PVP1'NaBH

Z()= = (B)
I(t) Imsin( t 0) + Nyq st plot '(X11) TEM

V' + jV" R RICPE

Z() = Z' + jZ" =
/' + j l"
(c)
3-5nm' NaBH

(AC) (DC)j

e rna Ro

[16]

EIS fH 7(a)
( )PVP-Pt ITO-PEN

( 5mV lOmV) ITO-PEN

/2 SEM 10

7(b) R

(serIes resIStance);RCharge transfer

20-100nm InO;
resistance) ; CPE Z' (ohm-cm') PVP-Pt
Rs : series resistance
(9) charge transfer resistance
IOnm'
Ro : Nernst diffusion resislance
(constant phase element) R"

1 CPE .8 Nyquist plot lOOnm

128 22 2 2 142 29
 F;

l.
- bare ITO-PEN
- PVP-Pton ITO-PEN 13
100
14
14 3400

cm-] -OH 2900cm- ' C-H

-
4 600 800 1000
wavelength (nm)
-OH
11 PVP-Pt ITO-PENIIUV-Vi sibie:

iTO-PEN: PVP-Pt iTO-PEN

( )PVP-Pt ITO-PEN
() PVP-Pt ITO-PEN

j ITO -PVP-

PVP-Pt:

PVP-Pt OH
12
10 iTO-PEN (a)(b)SEM

-OH
JltpvP-Pt
PVP-Pt {l
60% -
IRIl PVP-Pt ITO-PEN 550nm 75.3% ' !'IIJ
ITO-PEN 85.1% '
4.25 f.lg/ -
- 11 ' cm' (I CP-AES) FT-IR mq ~ 12

t30 222 20142 131

 F;

l.
- bare ITO-PEN
- PVP-Pton ITO-PEN 13
100
14
14 3400

cm-] -OH 2900cm- ' C-H

-
4 600 800 1000
wavelength (nm)
-OH
11 PVP-Pt ITO-PENIIUV-Vi sibie:

iTO-PEN: PVP-Pt iTO-PEN

( )PVP-Pt ITO-PEN
() PVP-Pt ITO-PEN

j ITO -PVP-

PVP-Pt:

PVP-Pt OH
12
10 iTO-PEN (a)(b)SEM

-OH
JltpvP-Pt
PVP-Pt {l
60% -
IRIl PVP-Pt ITO-PEN 550nm 75.3% ' !'IIJ
ITO-PEN 85.1% '
4.25 f.lg/ -
- 11 ' cm' (I CP-AES) FT-IR mq ~ 12

t30 222 20142 131


/rhv

16 2
-6 0
1 L
~ -40

E . ...
-20 ;;: -20 ..
.0 min
. 3 min
. 20 40 60
L80 8.09 % .

"'Smin z' (ohmcml ) 0.83 % ITO-PEN

FT-IR .
10 min
FTO (I TO
!
-10
PEN lSru FTO 10ru ) .
. 13 FT-IR- 'N

-5 PVP-Pt FTO R" fl

(<10cm') .
100 10 20 3
1
- - - Omin
- 5min z' (ohm cm2)
80 30 min
)( _.- 60min
15 PVP-Pt ITO-PEN.
Nyquist plot

20
-0 H c-O 20 ITO-PEN
4000

\
3000 20 o 1000
wavelength (nm) E 15
SEM
2
14 - F IR 10nm;
~ 10 A PVP-Pt on ITO-PEN A
g PVP-Pt on FTO
A .. (4.2S g/cm')
E 5 A

60% ;

A
Pt FTO PVP-Pt ITO-PEN E 4

/PVP-Pt
4 -F IR
0.0 2 0.4 0.6 0.8
5
voltage (V)
5
10 Rct{ 3_70cm'

16 J-V: PVP-Pl FTO Rctf 3.70cm' ;
6_S0cm' .
PVP-Pl ITO-PEN 8.09%
EIS

15 -

Rct Rct( 5 () 2 FTO ITO-PEN

30.S0cm' 3.70cm' . J..e: /mAcm -2 Vf1C-. /V FF ~I%

FT0 1i! 17.76 0.71 7 8.92

-
ITO-PEN 17.72 0.68 0.67 8.09

132 22 2 20142 133


/rhv

16 2
-6 0
1 L
~ -40

E . ...
-20 ;;: -20 ..
.0 min
. 3 min
. 20 40 60
L80 8.09 % .

"'Smin z' (ohmcml ) 0.83 % ITO-PEN

FT-IR .
10 min
FTO (I TO
!
-10
PEN lSru FTO 10ru ) .
. 13 FT-IR- 'N

-5 PVP-Pt FTO R" fl

(<10cm') .
100 10 20 3
1
- - - Omin
- 5min z' (ohm cm2)
80 30 min
)( _.- 60min
15 PVP-Pt ITO-PEN.
Nyquist plot

20
-0 H c-O 20 ITO-PEN
4000

\
3000 20 o 1000
wavelength (nm) E 15
SEM
2
14 - F IR 10nm;
~ 10 A PVP-Pt on ITO-PEN A
g PVP-Pt on FTO
A .. (4.2S g/cm')
E 5 A

60% ;

A
Pt FTO PVP-Pt ITO-PEN E 4

/PVP-Pt
4 -F IR
0.0 2 0.4 0.6 0.8
5
voltage (V)
5
10 Rct{ 3_70cm'

16 J-V: PVP-Pl FTO Rctf 3.70cm' ;
6_S0cm' .
PVP-Pl ITO-PEN 8.09%
EIS

15 -

Rct Rct( 5 () 2 FTO ITO-PEN

30.S0cm' 3.70cm' . J..e: /mAcm -2 Vf1C-. /V FF ~I%

FT0 1i! 17.76 0.71 7 8.92

-
ITO-PEN 17.72 0.68 0.67 8.09

132 22 2 20142 133

 |

Electrochemical Society 1997 , 144 (3) , 4847-4853 Hsu , w. -C.; Char Y. -H. , Durability

83% 876. [1O ]Lan, J.- L.; Wan , C.-C.; Wei , T.-C.; Hsu , test of PVP-capped Pt nanoclusters
ITO-PEN [5]Kim, S.-; Nah , Y.-c.; Noh , Y.-Y.; Jo , w. -C.; Peng, c.; Chang, Y.-H.; Ch counter electrode for highly efficiency
J.; Kim , D.- Electrodeposited Pt for C.-M. , Improvement of Photovoltaic dye-sensitized solar cel l. Progress
PVP cost-efficient and flexible dye-sensitized Performance of Dye-Sensitized in Photovoltaics: Research and
solar cells. Electrochimica Acta 2006 , Solar Cell by Post Heat Treatment Applications 2012 , 20 (1), 44-50.
51 (1 8), 3814-3819 of Polymer-Capped Nano-Platinum [1 5] Chen, L.; Tan , w.; Zhang , J.; Zh X.;

[1] O'Regan , 8.; Gratzel , M. , A lowcost
high-efficiency solar cell based on dye-
sensitized colloidal Ti0 2 films. Nature
1991 , 353.
[2] Fang, X.; ~ T.; Guan , G.; Akiyama ,
M.; Kida , T.; Abe , E. , Effect of the
thickness of the Pt film coated on a
counter electrode on the performance
of a dye-sensitized solar cell. Journal of
Electroanalytical Chemistry 2004 , 570
(2) , 257-263.
[3] Fang , X.; Ma , T.; Guan , G.;
Akiyama , M.; Abe , E. , Performances
[6] Yang , C.-C.; Zhang , H. Q.; Zheng , Y. R. ,
DSSC with a novel Pt counter electrodes
using pulsed electroplating techniques.
Current Applied Physics 20 11 (1) ,
SI47-S153.
[7] Li n , C.-Y.; Lin , J.-Y.; Wan , C.-C.;
Wei , T. -C. , High-performance and low
platinum loading electrodeposited-Pt
counter electrodes for dye-sensitized
solar cells. Electrochimica Acta 20 11 ,
56 (5) , 1941-1946.
[8]Wei , T. C.; Wan , C. C.; Wang
Poly(N -vinyl-2-pyrrolidone )-capped
platinum nano c1 usters on indium-tin
oxide glass as counterelectrode for dye-
sensitized solar cells. Applied Physics
Counterelectrode. In t. J. El ectrochem
Sci. 2011 , 6.
[11]Wang , G.; Lin , Xi X.; Li , X.;
Wang , W. , X-ray photoelectron
spectroscopy analysis of the stability
of platinized catalytic electrodes in
dye-sensitized solar cells. Surface
and Interface Analysis 2004, 36 (11) ,
1437-1440.
[12] Olsen, E.; Hagen , G.; Lindqui S.
Dissolution of platinum in methoxy
propionitrile containing LiI1 2. solar
Energy Materials and Solar Cells
2000, 63 (3) , 267-273
[13] Li n , L.-Y.; Nien , P.-C.; Lee , C.-
P.; Tsai , K.- W.; Yeh , M.-H.; Vittal ,
Zhang , X.; Li n, Y. , Fabrication of high
performance Pt counter electrodes
on conductive plastic substrate for
flexible dye-sensitized solar cells.
Electrochirnica Acta 2010 , 55 (1 1) ,
3721-3726.
[16] Hossain , M. J.; Tsunoyama , H.;
Yamauchi , M.; Ic hikuni , N.; Tsukuda ,
T. , High-yield synthesis of PVP-
stabilized small Pt clusters by
microfluidic method. Catalysis Today
2012 , 183 (1) , 101-107

characteristics of dye-sensitized solar Letlers 2006, 88 (1 0) , 103122. R.; Ho , K.-C. , Low- Temperature

cells based on counter electrodes with [9]Wei , T.-C.; Wan , C.-C.; Wang , Y.- Y.; Flexible Photoanode and Net-Like :

:
Pt films of different thickness. Journal Chen , c. -m.; Shiu, H. -s. , Immobilization Pt Counter Electrode for Improving
:

of Photochemistry and Photobiology A: of Poly(Nly 1-2-pyrrol idone )-Capped the Performance of Dye-Sensitized

Chemistry 2004 , 164 (1-3) , 179-182. Platinum Nano c1 usters on Indium-Tin Solar Cells. The Journal of Physical

[4] Papageorgiou , N. , An Iodine/Triiodide Oxide Glass and Its Application in Dye- Chemistry C 2010 , 114 (49) , 21808-

Reduction El ectrocatalyst for Aqueous Sensitized Solar Cells. The Journal of 21815.

and Organic Media. Journal of The Physical Chemistry C 2007 , 111 (12) , [14] Lan , J.-L.; Wan , C.-C.; W T.-C.;

134 22 2 20142 135

 |

Electrochemical Society 1997 , 144 (3) , 4847-4853 Hsu , w. -C.; Char Y. -H. , Durability

83% 876. [1O ]Lan, J.- L.; Wan , C.-C.; Wei , T.-C.; Hsu , test of PVP-capped Pt nanoclusters
ITO-PEN [5]Kim, S.-; Nah , Y.-c.; Noh , Y.-Y.; Jo , w. -C.; Peng, c.; Chang, Y.-H.; Ch counter electrode for highly efficiency
J.; Kim , D.- Electrodeposited Pt for C.-M. , Improvement of Photovoltaic dye-sensitized solar cel l. Progress
PVP cost-efficient and flexible dye-sensitized Performance of Dye-Sensitized in Photovoltaics: Research and
solar cells. Electrochimica Acta 2006 , Solar Cell by Post Heat Treatment Applications 2012 , 20 (1), 44-50.
51 (1 8), 3814-3819 of Polymer-Capped Nano-Platinum [1 5] Chen, L.; Tan , w.; Zhang , J.; Zh X.;

[1] O'Regan , 8.; Gratzel , M. , A lowcost
high-efficiency solar cell based on dye-
sensitized colloidal Ti0 2 films. Nature
1991 , 353.
[2] Fang, X.; ~ T.; Guan , G.; Akiyama ,
M.; Kida , T.; Abe , E. , Effect of the
thickness of the Pt film coated on a
counter electrode on the performance
of a dye-sensitized solar cell. Journal of
Electroanalytical Chemistry 2004 , 570
(2) , 257-263.
[3] Fang , X.; Ma , T.; Guan , G.;
Akiyama , M.; Abe , E. , Performances
[6] Yang , C.-C.; Zhang , H. Q.; Zheng , Y. R. ,
DSSC with a novel Pt counter electrodes
using pulsed electroplating techniques.
Current Applied Physics 20 11 (1) ,
SI47-S153.
[7] Li n , C.-Y.; Lin , J.-Y.; Wan , C.-C.;
Wei , T. -C. , High-performance and low
platinum loading electrodeposited-Pt
counter electrodes for dye-sensitized
solar cells. Electrochimica Acta 20 11 ,
56 (5) , 1941-1946.
[8]Wei , T. C.; Wan , C. C.; Wang
Poly(N -vinyl-2-pyrrolidone )-capped
platinum nano c1 usters on indium-tin
oxide glass as counterelectrode for dye-
sensitized solar cells. Applied Physics
Counterelectrode. In t. J. El ectrochem
Sci. 2011 , 6.
[11]Wang , G.; Lin , Xi X.; Li , X.;
Wang , W. , X-ray photoelectron
spectroscopy analysis of the stability
of platinized catalytic electrodes in
dye-sensitized solar cells. Surface
and Interface Analysis 2004, 36 (11) ,
1437-1440.
[12] Olsen, E.; Hagen , G.; Lindqui S.
Dissolution of platinum in methoxy
propionitrile containing LiI1 2. solar
Energy Materials and Solar Cells
2000, 63 (3) , 267-273
[13] Li n , L.-Y.; Nien , P.-C.; Lee , C.-
P.; Tsai , K.- W.; Yeh , M.-H.; Vittal ,
Zhang , X.; Li n, Y. , Fabrication of high
performance Pt counter electrodes
on conductive plastic substrate for
flexible dye-sensitized solar cells.
Electrochirnica Acta 2010 , 55 (1 1) ,
3721-3726.
[16] Hossain , M. J.; Tsunoyama , H.;
Yamauchi , M.; Ic hikuni , N.; Tsukuda ,
T. , High-yield synthesis of PVP-
stabilized small Pt clusters by
microfluidic method. Catalysis Today
2012 , 183 (1) , 101-107

characteristics of dye-sensitized solar Letlers 2006, 88 (1 0) , 103122. R.; Ho , K.-C. , Low- Temperature

cells based on counter electrodes with [9]Wei , T.-C.; Wan , C.-C.; Wang , Y.- Y.; Flexible Photoanode and Net-Like :

:
Pt films of different thickness. Journal Chen , c. -m.; Shiu, H. -s. , Immobilization Pt Counter Electrode for Improving
:

of Photochemistry and Photobiology A: of Poly(Nly 1-2-pyrrol idone )-Capped the Performance of Dye-Sensitized

Chemistry 2004 , 164 (1-3) , 179-182. Platinum Nano c1 usters on Indium-Tin Solar Cells. The Journal of Physical

[4] Papageorgiou , N. , An Iodine/Triiodide Oxide Glass and Its Application in Dye- Chemistry C 2010 , 114 (49) , 21808-

Reduction El ectrocatalyst for Aqueous Sensitized Solar Cells. The Journal of 21815.

and Organic Media. Journal of The Physical Chemistry C 2007 , 111 (12) , [14] Lan , J.-L.; Wan , C.-C.; W T.-C.;

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