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Abstract Wide bandgap power devices have emerged as an frequency of operation. This has created a growing need for
often superior alternative power switch technology for many power device technologies that can deliver high temperature,
power electronic applications. These devices theoretically have high-power density, and high-frequency operation. For
excellent material properties enabling power device operation at
higher switching frequencies and higher temperatures compared example, a variety of applications in the aircraft, automotive,
with conventional silicon devices. However, material defects and energy exploration industries require power conversion
can dominate device behavior, particularly over time, and this systems to operate at an ambient temperature significantly
should be strongly considered when trying to model actual > 200 C, far beyond Si material limits. Consequently, a new
characteristics of currently available devices. Compact models generation of so-called wide bandgap semiconductor devices
of wide bandgap power devices are necessary to analyze and
evaluate their impact on circuit and system performance. has emerged as viable replacements for the current Si-based
Available compact models, i.e., models compatible with circuit- power devices.
level simulators, are reviewed. In particular, this paper presents A substantial amount of research and development activity
a review of compact models for silicon carbide power diodes and has occurred over the past 20 years in the silicon carbide (SiC)
MOSFETs. and gallium nitride (GaN) fields. These efforts have deliv-
Index Terms Gallium-nitride (GaN), modeling, power device ered several classes of power semiconductor devices, with
modeling, power semiconductor devices, silicon-carbide (SiC), voltage ratings from 30 V to 15 kV and growing, for a wide
wide bandgap. variety of applications. Circuit and system researchers have
collaborated in parallel to demonstrate the efficacy of these
I. I NTRODUCTION
device technologies in demonstration designs ranging from
TABLE II
P UBLISHED SiC P OWER D IODE M ODELS
Fig. 3. Cross-sectional views of (a) SiC Schottky diode, (b) SiC p-i-n diode,
and (c) SiC hybrid diode.
C. Semiphysics-Based Models
In [44], the conventional p-n junction Shockley equation
was used to model forward conduction and reverse leakage
currents for SiC JBS. The temperature dependence of series
resistance was modeled as a second-order relationship with the
difference between the device junction temperature and ambi-
ent temperature. However, the reverse recovery characteristic
was not included in this model. The charge-controlled model
was used in [35] to accurately model the dynamic effects of
parasitic device capacitance. In [47], the Shockley equation
was also applied to model a SiC Schottky diode; and the effects
of image force barrier lowering and tunneling on reverse
leakage current were considered. In [36], the forward current
voltage characteristic of a SiC Schottky diode was modeled
voltage drop of a Schottky contact and the high blocking using standard Schottky diode equations based on thermionic
voltage of p-i-n diodes and have become common- emission theory. Note that the parameters used, such as
place starting with the second generation of SiC diode Schottky barrier height and effective Richardson constant,
structures. Hybrid diodes have Schottky-like ON-state have a clear physical meaning. The reverse leakage current
and switching behavior and p-i-n-like OFF-state char- was modeled using a parallel conductance. Zhang et al. [41]
acteristics at the same time. An MPS or JBS presented a SiC Schottky diode model using the standard
diode consists of interleaved Schottky and p+ doped Schottky diode equation, including the temperature effect on
regions [Fig. 3(c)]. For very small ON-state voltage carrier mobility. The parameter extraction procedure of this
drop, only Schottky contact areas are active. On the approach to model a SiC Schottky diode was presented in [49].
other hand, when the diodes are reverse-biased, Schottky However, this model was not complete, because the tempera-
contact conduction areas are electrically shielded by ture and reverse bias voltage effects on reverse leakage current
p-i-n junction depletion regions. An additional advantage were not included. In [38][40], modified Schottky diode
of hybrid diodes is increased surge current capability, models were proposed, considering the dependence of the
due to the conduction of the p-i-n areas at higher forward reverse leakage current on the electric field and temperature.
voltages.
To evaluate the behavior of power electronics systems, D. Physics-Based Models
accurate power diode device models are required for power
converter designers. Consequently, accurate and reliable power The Mantooth unified diode model is capable of describing
diode models are necessary. Most of the SiC power diode SiC p-i-n, Schottky, and MPS diodes under different
models published have been reviewed, and they are listed simulation conditions, including forward bias, emitter
chronologically in Table II. recombination, conductivity modulation, breakdown behav-
ior, reverse recovery, and temperature effects [26][30]. The
temperature dependence of the forward series resistance,
B. Behavioral Models semiconductor material bandgap, and carrier mobility was
In [43], the linear model of a SiC Schottky diode, including considered in this model. In [31], the lumped charge method
a dc voltage drop and a series resistor, has been reported. was used to model SiC p-i-n diodes. The main idea of this
Linear equations have been used to approximate the tem- approach is that the n-drift region is divided into a number
perature effects on the dc voltage drop and on series resis- of small subregions, and charge control equations are applied
tance. In [34], the exact same method has been applied to to each subregion. For a high voltage JBS diode, a novel
estimate power loss characteristics of a SiC Schottky diode. physics-based model was developed in [42]. The forward
A behavioral model of SiC merged p-i-n Schottky diodes was ON -resistance was more accurately approximated, consider-
presented in [32] and [33]. The forward and reverse current ing the current spreading from anode to cathode due to
versus voltage relationships were described using exponential the presence of nonconducting p+ regions on the anode
equations, and model parameters were approximated using side [Fig. 3(c)]. The electric field at Schottky contact and
MANTOOTH et al.: MODELING OF WIDE BANDGAP POWER SEMICONDUCTOR DEVICESPART I 429
the FowlerNordheim tunneling currents were considered to This high blocking voltage was achieved using an 85-m thick
model the reverse leakage current. and 8 1014 cm3 doped n-type drift epilayer. A specific
ON -resistance of 123 mcm2 was obtained with a gate
Fig. 4. (a) Cross-sectional views of SiC UMOSFET. (b) SiC DMOSFET [40].
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May 2014. conductor power devices, control of power elec-
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