Professional Documents
Culture Documents
Complementary Silicon
Plastic Power Transistors http://onsemi.com
MAXIMUM RATINGS AYWW
STYLE 1
Rating Symbol Value Unit 1
2
Collector - Emitter Voltage TIP31, TIP32 VCEO 40 Vdc 3
TIP31A, TIP32A 60
TIP31B, TIP32B 80
TIP31C, TIP32C 100
Collector-Base Voltage TIP31, TIP32 VCB 40 Vdc TIP3xx = Device Code
TIP31A, TIP32A 60 xx = 1, 1A, 1B, 1C,
TIP31B, TIP32B 80 2, 2A, 2B, 2C,
TIP31C, TIP32C 100 A = Assembly Location
Y = Year
Emitter-Base Voltage VEB 5.0 Vdc
WW = Work Week
Collector Current Continuous IC 3.0 Adc
G Pb-Free Package
Peak 5.0
Base Current IB 1.0 Adc
Total Power Dissipation PD ORDERING INFORMATION
@ TC = 25C 40 W See detailed ordering and shipping information in the package
Derate above 25C 0.32 W/C dimensions section on page 2 of this data sheet.
Total Power Dissipation PD
@ TA = 25C 2.0 W
Derate above 25C 0.016
W/C
Unclamped Inductive Load Energy (Note 1) E 32 mJ
Operating and Storage Junction TJ, Tstg 65 to C
Temperature Range +150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Ambient RqJA 62.5 C/W
Thermal Resistance, Junction-to-Case RqJC 3.125 C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2) TIP31, TIP32 VCEO(sus) 40 - Vdc
(IC = 30 mAdc, IB = 0) TIP31A, TIP32A 60 -
TIP31B, TIP32B 80 -
TIP31C, TIP32C 100 -
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31, TIP32, TIP31A, TIP32A ICEO - 0.3 mAdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C, TIP32B, TIP32C - 0.3
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
(VCE = 60 Vdc, VEB = 0)
TIP31, TIP32
TIP31A, TIP32A
ICES
- 200
mAdc
- 200
(VCE = 80 Vdc, VEB = 0) TIP31B, TIP32B - 200
(VCE = 100 Vdc, VEB = 0) TIP31C, TIP32C - 200
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO - 1.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) hFE 25 - -
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) 10 50
Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)
Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) - 1.8 Vdc
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 - MHz
Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 - -
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device Package Shipping
TIP31 TO-220 50 Units / Rail
TIP31G TO-220 50 Units / Rail
(Pb-Free)
TIP31A TO-220 50 Units / Rail
TIP31AG TO-220 50 Units / Rail
(Pb-Free)
TIP31B TO-220 50 Units / Rail
TIP31BG TO-220 50 Units / Rail
(Pb-Free)
TIP31C TO-220 50 Units / Rail
TIP31CG TO-220 50 Units / Rail
(Pb-Free)
TIP32 TO-220 50 Units / Rail
TIP32G TO-220 50 Units / Rail
(Pb-Free)
TIP32A TO-220 50 Units / Rail
TIP32AG TO-220 50 Units / Rail
(Pb-Free)
TIP32B TO-220 50 Units / Rail
TIP32BG TO-220 50 Units / Rail
(Pb-Free)
TIP32C TO-220 50 Units / Rail
TIP32CG TO-220 50 Units / Rail
(Pb-Free)
http://onsemi.com
2
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
TC TA
40 4.0
20 2.0
TA
10 1.0
0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (C)
t1
0.3 tr @ VCC = 10 V
t3 Cjd << Ceb
APPROX
+11 V t1 7.0 ns -4.0 V
0.1
100 < t2 < 500 ms
Vin t3 < 15 ns 0.07 td @ VEB(off) = 2.0 V
0.05
0.03
t2 DUTY CYCLE 2.0%
0.02
TURN-OFF PULSE APPROX -9.0 V 0.03 0.05 0.1 0.3 0.5 1.0 3.0
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. IC, COLLECTOR CURRENT (AMP)
http://onsemi.com
3
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
0.3
0.2
0.2
0.1
0.1 P(pk)
0.05 ZqJC(t) = r(t) RqJC
0.07
RqJC(t) = 3.125C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
0.03 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.02
0.01 TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
3.0 300
2.0 IB1 = IB2
TJ = +25C
ts IC/IB = 10
ts = ts - 1/8 tf 200
1.0 tf @ VCC = 30 V TJ = 25C
CAPACITANCE (pF)
0.7
0.5
t, TIME (s)
http://onsemi.com
4
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
500 2.0
25C
100
1.2 IC = 0.3 A 1.0 A 3.0 A
70 -55C
50
30 0.8
0.4
10
7.0
5.0 0
0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)
1.4 +2.5
+1.0
103 107
VCE = 30 V VCE = 30 V
102 IC = 10 x ICES
IC, COLLECTOR CURRENT (A)
106
TJ = 150C
101
IC ICES
105
100 100C
104 IC = 2 x ICES
10-1 REVERSE FORWARD
Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance
http://onsemi.com
5
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
PACKAGE DIMENSIONS
TO-220
CASE 221A-09
ISSUE AE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
-T- PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
T S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
K J 0.014 0.025 0.36 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
http://onsemi.com TIP31A/D
6