IRGB4062DPbF

IRGP4062DPbF
IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features VCES = 600V
Low VCE (ON) Trench IGBT Technology
Low switching losses IC = 24A, TC = 100C
Maximum Junction temperature 175 C
5 S short circuit SOA G tSC 5s, TJ(max) = 175C
Square RBSOA
100% of the parts tested for ILM E VCE(on) typ. = 1.65V
Positive VCE (ON) Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
n-channel
Tight parameter distribution
Lead Free Package C C C

Benefits
High Efficiency in a wide range of applications E E
E C C
Suitable for a wide range of switching frequencies due to C G G
G
Low VCE (ON) and Low Switching losses
Rugged transient Performance for increased reliability TO-220AB TO-247AC TO-247AD
Excellent Current sharing in parallel operation IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF
Low EMI
G C E
Gate Collector Emitter
Absolute Maximum Ratings
Parameter Max. Units
V CES Collector-to-Emitter Voltage 600 V
IC @ TC = 25C Continuous Collector Current 48
IC @ TC = 100C Continuous Collector Current 24
ICM Pulse Collector Current, VGE = 15V 72
ILM Clamped Inductive Load Current, VGE = 20V c 96 A
IF @ TC = 25C Diode Continous Forward Current 48
IF @ TC = 100C Diode Continous Forward Current 24
IFM Diode Maximum Forward Current e 96
V GE Continuous Gate-to-Emitter Voltage 20 V
Transient Gate-to-Emitter Voltage 30
PD @ TC = 25C Maximum Power Dissipation 250 W
PD @ TC = 100C Maximum Power Dissipation 125
TJ Operating Junction and -55 to +175
TST G Storage Temperature Range C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm)

Thermal Resistance
Parameter Min. Typ. Max. Units
R JC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB 0.60
R JC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-220AB 1.53
R JC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247 0.65 C/W
R JC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-247 1.62
R CS Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50
R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) 80

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Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 100A f CT6
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.30 V/C VGE = 0V, IC = 1mA (25C-175C) CT6

1.60 1.95 IC = 24A, VGE = 15V, TJ = 25C 5,6,7

VCE(on) Collector-to-Emitter Saturation Voltage 2.03 V IC = 24A, VGE = 15V, TJ = 150C 9,10,11

2.04 IC = 24A, VGE = 15V, TJ = 175C

VGE(th) Gate Threshold Voltage 4.0 6.5 V VCE = VGE, IC = 700A 9, 10,
VGE(th)/TJ Threshold Voltage temp. coefficient -18 mV/C VCE = VGE, IC = 1.0mA (25C - 175C) 11, 12

gfe Forward Transconductance 17 S VCE = 50V, IC = 24A, PW = 80s

ICES Collector-to-Emitter Leakage Current 2.0 25 A VGE = 0V, VCE = 600V
775 VGE = 0V, VCE = 600V, TJ = 175C
VFM Diode Forward Voltage Drop 1.80 2.6 V IF = 24A 8

1.28 IF = 24A, TJ = 175C

IGES Gate-to-Emitter Leakage Current 100 nA VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig
Qg Total Gate Charge (turn-on) 50 75 IC = 24A 24

Qge Gate-to-Emitter Charge (turn-on) 13 20 nC VGE = 15V CT1

Qgc Gate-to-Collector Charge (turn-on) 21 31 VCC = 400V

Eon Turn-On Switching Loss 115 201 IC = 24A, VCC = 400V, VGE = 15V CT4

Eoff Turn-Off Switching Loss 600 700 J RG = 10, L = 200H, LS = 150nH, TJ = 25C
Etotal Total Switching Loss 715 901 Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time 41 53 IC = 24A, VCC = 400V, VGE = 15V CT4

tr Rise time 22 31 ns RG = 10, L = 200H, LS = 150nH, TJ = 25C

td(off) Turn-Off delay time 104 115
tf Fall time 29 41
Eon Turn-On Switching Loss 420 IC = 24A, VCC = 400V, VGE=15V 13, 15

Eoff Turn-Off Switching Loss 840 J RG=10, L= 200H, LS=150nH, TJ = 175C f CT4

Etotal Total Switching Loss 1260 Energy losses include tail & diode reverse recovery WF1, WF2

td(on) Turn-On delay time 40 IC = 24A, VCC = 400V, VGE = 15V 14, 16

tr Rise time 24 ns RG = 10, L = 200H, LS = 150nH CT4

td(off) Turn-Off delay time 125 TJ = 175C WF1

tf Fall time 39 WF2

Cies Input Capacitance 1490 pF VGE = 0V 23

Coes Output Capacitance 129 VCC = 30V

Cres Reverse Transfer Capacitance 45 f = 1.0Mhz
TJ = 175C, IC = 96A 4

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2

Rg = 10, VGE = +20V to 0V

SCSOA Short Circuit Safe Operating Area 5 s VCC = 400V, Vp =600V 22, CT3

Rg = 10, VGE = +15V to 0V WF4

Erec Reverse Recovery Energy of the Diode 621 J TJ = 175C 17, 18, 19

trr Diode Reverse Recovery Time 89 ns VCC = 400V, IF = 24A 20, 21

Irr Peak Reverse Recovery Current 37 A VGE = 15V, Rg = 10, L =200H, Ls = 150nH WF3

Notes:
VCC = 80% (VCES), VGE = 20V, L = 100H, RG = 10
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

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50 300
45
250
40
35
200
30

Ptot (W)
IC (A)

25 150

20
100
15
10
50
5
0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180
T C (C) T C (C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
1000 1000

100
100
10sec
IC (A)

IC (A)

10

100sec
10
1 1msec
Tc = 25C
Tj = 175C DC
Single Pulse
0.1 1
1 10 100 1000 10000 10 100 1000
VCE (V) VCE (V)
Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA
TC = 25C, TJ 175C; VGE =15V TJ = 175C; VGE =20V

90 90

80 80

70 VGE = 18V 70
VGE = 15V VGE = 18V
60 VGE = 12V 60 VGE = 15V
VGE = 10V VGE = 12V
50 VGE = 8.0V 50
ICE (A)
ICE (A)

VGE = 10V
VGE = 8.0V
40 40

30 30

20 20

10 10

0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8

VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40C; tp = 80s TJ = 25C; tp = 80s

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90 120

80 VGE = 18V
VGE = 15V 100
70 VGE = 12V
VGE = 10V
60 VGE = 8.0V 80 -40c
25C
50
ICE (A)

175C

IF (A)
60
40

30 40

20
20
10

0 0
0 1 2 3 4 5 6 7 8 0.0 1.0 2.0 3.0
VF (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 175C; tp = 80s tp = 80s
20 20
18 18
16 16
14 14
12 ICE = 12A 12 ICE = 12A
VCE (V)

VCE (V)

10 ICE = 24A 10 ICE = 24A

ICE = 48A ICE = 48A
8 8
6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)
Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40C TJ = 25C
20 120

18
100
16
T J = 25C
14
80 TJ = 175C
12 ICE = 12A
VCE (V)

ICE (A)

10 ICE = 24A 60
ICE = 48A
8
40
6
4
20
2
0 0
5 10 15 20 0 5 10 15
VGE (V) VGE (V)

Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics

TJ = 175C VCE = 50V; tp = 10s

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1800 1000

1600

1400 tdOFF

Swiching Time (ns)

1200 100
EOFF
Energy (J)

tdON
1000
tF
800
EON
600 10 tR
400

200

0 1
0 10 20 30 40 50 60 10 20 30 40 50

IC (A) IC (A)

Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V
1600 1000

1400

1200 tdOFF
EON
Swiching Time (ns)
1000
Energy (J)

EOFF
800 100
tdON
600

400 tF

200 tR

0 10
0 25 50 75 100 125 0 25 50 75 100 125
RG ()
Rg ()
Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 175C; L = 200H; VCE = 400V, ICE = 24A; VGE = 15V TJ = 175C; L = 200H; VCE = 400V, ICE = 24A; VGE = 15V
40 45
RG = 10
40
35
35
30
RG = 22 30
IRR (A)

IRR (A)

25 25
RG = 47
20
20
RG = 100 15
15
10

10 5
0 10 20 30 40 50 60 0 25 50 75 100 125
IF (A) RG (

Fig. 17 - Typ. Diode IRR vs. IF Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175C TJ = 175C

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45 4000
48A
40 3500

35 10
3000
30 22

QRR (nC)
2500
IRR (A)

47
25 24A
100
2000
20
1500
15
12A
1000
10

5 500
0 500 1000 1500 0 500 1000 1500
diF /dt (A/s) diF /dt (A/s)
Fig. 19 - Typ. Diode IRR vs. diF/dt Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175C VCC = 400V; VGE = 15V; TJ = 175C

1000 16 280

14 240
800
RG = 47
RG = 10 12 200
Energy (J)

Current (A)
600
Time (s)

RG = 22 10 160
RG = 100
400
8 120

200
6 80

0 4 40
0 10 20 30 40 50 60 8 10 12 14 16 18
IF (A) VGE (V)

Fig. 21 - Typ. Diode ERR vs. IF Fig. 22 - VGE vs. Short Circuit Time
TJ = 175C VCC = 400V; TC = 25C
10000 16

14 V CES = 300V
VGE, Gate-to-Emitter Voltage (V)

V CES = 400V
12
1000 Cies
Capacitance (pF)

10

6
100 Coes
4

2
Cres
10 0
0 20 40 60 80 100 0 5 10 15 20 25 30 35 40 45 50 55
VCE (V) Q G, Total Gate Charge (nC)

Fig. 23 - Typ. Capacitance vs. VCE Fig. 24 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 24A; L = 600H

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D = 0.50

0.20
Thermal Response ( Z thJC )

0.1
0.10
0.05 R1 R2
R1 R2 Ri (C/W) i (sec)
0.02 J C
0.01 J 0.2329 0.000234
0.01 1 2
1 2 0.3631 0.007009
Ci= iRi
SINGLE PULSE Ci iRi

0.001 ( THERMAL RESPONSE )

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-220AB

10

1 D = 0.50
Thermal Response ( Z thJC )

0.20
0.10
0.1 0.05
R1 R2 R3
R1 R2 R3 Ri (C/W) i (sec)
0.02 J
0.01 J
C

0.476 0.000763
1 2 3
0.01 1 2 3 0.647 0.003028
Ci= iRi 0.406 0.023686
Ci iRi

0.001
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-220AB

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D = 0.50
Thermal Response ( Z thJC )

0.20
0.1
0.10
R1 R2
0.05 R1 R2 Ri (C/W) i (sec)
J C
J 0.2782 0.000311
1 2
0.02 1 2 0.3715 0.006347
0.01 0.01 Ci= iRi
Ci iRi

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 27. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247

10

1 D = 0.50
Thermal Response ( Z thJC )

0.20
0.10
0.1 0.05
R1 R2 R3
0.02 R1 R2 R3 Ri (C/W) i (sec)
J
0.01 J
C

0.693 0.001222
0.01 1 2 3
1 2 3 0.621 0.005254
Ci= iRi 0.307 0.038140
Ci iRi

0.001 SINGLE PULSE

( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 28. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247

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L
VC C 80 V DU T
D UT 4 80V
0
Rg
1K

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

d io d e clamp /
DU T
L

4x
- 5V
DC V360V
CC
DU T /
DUT D RIVER VCC
Rg

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

VCC
R=
ICM

DUT VCC
Rg

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

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600 30 600 60
tf
500 25 500 50
90% ICE V CE
C tr
400 20 400 40
ICE ICE
V CE
300 C 15 300 C 30
VCE (V)

VCE (V)
90% test

200 10 200 20
5% V CE
10% ICE
100 5 100 10
5% ICE 5% V CE

0 0 0 0
EOFF Loss
EON
-100 -5 -100 -10
-0.40 0.10 0.60 11.70 11.90 12.10 12.30
Time(s) Time (s)
Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175C using Fig. CT.4 @ TJ = 175C using Fig. CT.4

30 600 300
QRR ICE
20 500 250

10
tRR 400 200
0
300 V CE 150
VCE (V)
IRR (A)

-10 Peak
ICE (A)
10%
IRR 200 100
-20 Peak
IRR
100 50
-30

-40 0 0

-50 -100 -50

-0.15 -0.05 0.05 0.15 0.25 -5.00 0.00 5.00 10.00
time (S) time (S)
Fig. WF3 - Typ. Diode Recovery Waveform Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175C using Fig. CT.4 @ TJ = 25C using Fig. CT.3

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TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)
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TO-220AB package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

(;$03/( 7+,6,6$1,5)3(
:,7+$66(0%/< 3$57180%(5
/27&2'( ,17(51$7,21$/
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TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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TO-247AD Package Outline
Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information

(;$03/( 7+,6,6$1,5*3%.'(
:,7+$66(0%/< 3$57180%(5
/27&2'( ,17(51$7,21$/
$66(0%/('21:: 5(&7,),(5
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TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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