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6.002x ELECTRONICS
Energy,
CMOS
T
T1 T2
S1 closed S1 open 1
S 2 open S 2 closed
T = T1 + T2 =
f
t
2
Review Inverter RL
Eqvt. ckt On for T/2
VS Off for T/2
RL
VS +
C
RON
vO
vIN RON C
2
vIN VS
P= + CVS f
2
2 RL
T T
2 2
P STATIC P DYNAMIC
T t
1
T=
f 3
Review Inverter numbers
2
V
One gate: P = S + CVS 2 f
2 RL
C =1f F
P STATIC P DYNAMIC
RL = 10 k
25 15 9
P = 5 10
6
+ 10 25 3 10 f = 3 109
2 10
4
VS = 5 V
6.25KW! 375W
bad
disaster !
1
How to get rid of static power when input is high
VS VS
Intuition:
vI high vI low RL
i RL vO high
vI high vO low vI low
MOSFET
RON off
Problem case No problem
2
New Device PFET
N-channel MOSFET (NFET) P-channel MOSFET (PFET)
1
Consider this circuit
2
Behavior of the circuit VS
3
Key: no path from VS to GND! no static power!
Lets compute P DYNAMIC
VS
vO
vI
vI
T
t
1
f =
T
1
Using numbers from our previous example for CMOS
2
P = CVS f
C =1f F
RL = 10 k
f = 3 109
VS = 5 V
# gates = 5 106
2
2
Scaling up Increase frequency and number of gates, P = CVS f
but if everything else stayed the same C =1f F
Gates f
RL = 10 k
P
100 ~2.5 f = 3 109
106 MHz watts VS = 5 V
300 ~15
2x106 MHz watts
600 ~30
2x106 MHz watts
~375
5x106 3 GHz watts
~1875
25x106 3 GHz watts
3
How to reduce power 2
P = CVS f
C =1f F
RL = 10 k
f = 3 109
VS = 5 V
13
2
Real numbers P = CVS f
Transistors f P
Intel Pentium
2.5x106 66 MHz 15W 700nm, 1993
Intel PII
7.5x106 400 MHz 35W 350nm, 1997
Intel PIII
44x106 1 GHz 15W 180nm, 1999
Intel PIV
120x106 3 GHz 75W 130nm, 2001
2
Scaling up leakage arises, causes static power dissipation
3
CMOS Logic
S on S
G D G D
1
In general, if we want to implement F
2
If we want to implement F
e.g. F = A B
VS
VS
short
when F
is true, A B
else open
A
Z Z
B short A
when F
is true, B
else open