TCRT1000, TCRT1010

Vishay Semiconductors

Reflective Optical Sensor with Transistor Output

FEATURES
TCRT1000 TCRT1010
• Package type: leaded
• Detector type: phototransistor
• Dimensions (L x W x H in mm): 7 x 4 x 2.5
• Peak operating distance: 1 mm
• Operating range within > 20 % relative collector
current: 0.2 mm to 4 mm
• Typical output current under test: IC = 0.5 mA
21836
• Daylight blocking filter
• Emitter wavelength: 950 nm
• Lead (Pb)-free soldering released
• Compliant to RoHS directive 2002/95/EC and in
A C E C 19155_1 accordance to WEEE 2002/96/EC

DESCRIPTION APPLICATIONS
The TCRT1000 and TCRT1010 are reflective sensors which • Optoelectronic scanning and switching devices i.e., index
include an infrared emitter and phototransistor in a leaded sensing, coded disk scanning etc. (optoelectronic encoder
package which blocks visible light. assemblies for transmissive sensing).

PRODUCT SUMMARY
DISTANCE FOR DISTANCE RANGE FOR TYPICAL OUTPUT DAYLIGHT
PART NUMBER MAXIMUM CTRrel (1) RELATIVE Iout > 20 % CURRENT UNDER TEST (2) BLOCKING FILTER
(mm) (mm) (mA) INTEGRATED
TCRT1000 1 0.2 to 4 0.5 Yes
TCRT1010 1 0.2 to 4 0.5 Yes
Notes
(1) CTR: current transfere ratio, I /I
out in
(2) Conditions like in table basic charactristics/sensor

ORDERING INFORMATION
ORDERING CODE PACKAGING VOLUME (1) REMARKS
TCRT1000 Bulk MOQ: 1000 pcs, 1000 pcs/bulk Straight leads
TCRT1010 Bulk MOQ: 1000 pcs, 1000 pcs/bulk Bent leads
Note
(1) MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

SENSOR
Total power dissipation Tamb ≤ 25 °C Ptot 200 mW
Ambient temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
2 mm distance to package,
Soldering temperature Tsd 260 °C
t≤5s
INPUT (EMITTER)
Reverse voltage VR 5 V
Forward current IF 50 mA
Forward surge current tp ≤ 10 µs IFSM 3 A
Power dissipation Tamb ≤ 25 °C PV 100 mW
Junction temperature Tj 100 °C

Document Number: 83752 For technical questions, contact: sensorstechsupport@vishay.com www.vishay.com

Rev. 1.7, 17-Aug-09 1
TCRT1000, TCRT1010
Vishay Semiconductors Reflective Optical Sensor with
Transistor Output

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

OUTPUT (DETECTOR)
Collector emitter voltage VCEO 32 V
Emitter collector voltage VECO 5 V
Collector current IC 50 mA
Power dissipation Tamb ≤ 25 °C PV 100 mW
Junction temperature Tj 100 °C
Note
(1) T
amb = 25 °C, unless otherwise specified

ABSOLUTE MAXIMUM RATINGS

300
P - Power Dissipation (mW)

Coupled device
200

Phototransistor
100
IR - diode

0
0 25 50 75 100
95 11071 Tamb - Ambient Temperature (°C)

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (1)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

SENSOR
VCE = 5 V, IF = 20 mA,
Collector current IC (2) 0.3 0.5 mA
d = 1 mm (figure 2)
Cross talk current VCE = 5 V, IF = 20 mA, (figure 1) ICX (3) 1 µA
Collector emitter saturation IF = 20 mA, IC = 0.1 mA,
VCEsat (2) 0.3 V
voltage d = 1 mm (figure 2)
INPUT (EMITTER)
Forward voltage IF = 50 mA VF 1.25 1.6 V
Radiant intensity IF = 50 mA, tp = 20 ms Ie 75 mW/sr
Peak wavelength IF = 100 mA λP 940 nm
Virtual source diameter Method: 63 % encircled energy d 1.2 mm
OUTPUT (DETECTOR)
Collector emitter voltage IC = 1 mA VCEO 32 V
Emitter collector voltage IE = 100 µA VECO 5 V
Collector dark current VCE = 20 V, IF = 0 A, E = 0 lx ICEO 200 nA
Notes
(1) T
amb = 25 °C, unless otherwise specified
(2) Measured with the ‘Kodak neutral test card", white side with 90 % diffuse reflectance
(3) Measured without reflecting medium

www.vishay.com For technical questions, contact: sensorstechsupport@vishay.com Document Number: 83752

2 Rev. 1.7, 17-Aug-09
 TCRT1000, TCRT1010
Reflective Optical Sensor with Vishay Semiconductors
Transistor Output

Reflecting medium
(Kodak neutral test card)

~~
~
d ~
~~ Detector

Emitter

A C E C
95 10893

Fig. 2 - Test Condition

BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified

1000 10.0
Kodak Neutral Card
(White Side)
I C - Collector Current (mA)
d = 1 mm I F = 50 mA
IF - Forward Current (mA)

100
1.0 20 mA

10 mA
10
5 mA
0.1
1 2 mA

0.1 0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100
96 11862 VF - Forward Voltage (V) 95 11075 V CE - Collector Emitter Voltage (V)

Fig. 3 - Forward Current vs. Forward Voltage Fig. 5 - Collector Current vs. Collector Emitter Voltage

2.0 100
CTR rel - Relative Current Transfer Ratio

CTR - Current Transfer Ratio (%)

d = 1 mm
VCE = 5 V
1.5
10

1.0

1
0.5
VCE = 5 V
I F = 20 mA
d = 1 mm
0 0.1
- 25 0 25 50 75 100 0.1 1 10 100
95 11074 Tamb - Ambient Temperature (°C) 95 11076 I F - Forward Current (mA)

Fig. 4 - Relative Current Transfer Ratio vs. Ambient Temperature Fig. 6 - Current Transfer Ratio vs. Forward Current

Document Number: 83752 For technical questions, contact: sensorstechsupport@vishay.com www.vishay.com

Rev. 1.7, 17-Aug-09 3
TCRT1000, TCRT1010
Vishay Semiconductors Reflective Optical Sensor with
Transistor Output

10 120
VCE = 5 V Sensing Object

I Crel - Relative Collector Current

I C - Collector Current (mA)

I F = 20 mA 100
s
1 80

d
60

0.1 40
d = 1 mm
20 VCE = 5 V
I F = 20 mA
0.01 0
0 2 4 6 8 10 1 2 3 4 5 6
95 11077 d - Distance (mm) 95 11078 s - Displacement (mm)
Fig. 7 - Collector Current vs. Distance Fig. 8 - Relative Collector Current vs. Displacement

PACKAGE DIMENSIONS in millimeters

14768

14769

www.vishay.com For technical questions, contact: sensorstechsupport@vishay.com Document Number: 83752

4 Rev. 1.7, 17-Aug-09
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Revision: 18-Jul-08 1