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Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 0.57
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy 310 mJ
IAR Avalanche Current 45 A
EAR Repetitive Avalanche Energy 26 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current 80 MOSFET symbol D
S
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 80A, VGS = 0V
trr Reverse Recovery Time 99 150 ns TJ = 150C, IF = 80A, VDD = 50V
Qrr Reverse RecoveryCharge 460 700 nC di/dt = 100A/s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF8010
10000 1000
VGS VGS
TOP 15V TOP 15V
12V 12V
10V
4.0V
10
10
4.0V
1
20s PULSE WIDTH
20s PULSE WIDTH Tj = 175C
Tj = 25C 1
0.1
0.1 1 10 100
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
1000 3.5
I D = 80A
T J = 175C 3.0
ID, Drain-to-Source Current ()
2.5
100
(Normalized)
2.0
1.5
T J = 25C
10
1.0
100000 12
VGS = 0V, f = 1 MHZ ID= 80A
Ciss = C gs + Cgd, C ds SHORTED
VDS= 80V
Ciss 8
1000 6
Coss
4
100
Crss 2
0
10
0 20 40 60 80 100
1 10 100
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1000 10000
TJ = 175 C 100
10 100sec
10
1msec
T J= 25 C
1
1 Tc = 25C 10msec
Tj = 175C
Single Pulse
V GS = 0 V
0.1
0.1
0.0 0.5 1.0 1.5 2.0 1 10 100 1000
V SD,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
80
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
60
RG
+
-VDD
ID , Drain Current (A)
10V
Pulse Width 1 s
40
Duty Factor 0.1 %
0
25 50 75 100 125 150 175
TC , Case Temperature ( C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
(Z thJC )
1
Thermal Response
D = 0.50
P DM
0.20
0.1
0.10 t1
0.05 t2
SINGLE PULSE
0.02 Notes:
0.01 (THERMAL RESPONSE)
1. Duty factor D = t1/ t 2
2. Peak T J = P DM x Z thJC +T C
0.01
0.00001 0.0001 0.001 0.01 0.1 1
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IRF8010
15V 600
ID
TOP 18A
500 32A
L DRIVER BOTTOM 45A
VDS
100
V(BR)DSS
tp
0
25 50 75 100 125 150 175
Current Regulator
Same Type as D.U.T.
QG
50K
.2F
10 V 12V
.3F
QGS QGD +
V
D.U.T. - DS
VG VGS
3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRF8010
- +
-
RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple 5% ISD
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IRF8010
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045) LEAD ASSIGNMENTS
MIN 1 - GATE
1 2 3 2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)
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