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1N581x
ORDERING INFORMATION
MAXIMUM RATINGS
Rating Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage VRRM 20 30 40 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
NonRepetitive Peak Reverse Voltage VRSM 24 36 48 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Forward Current (Note 1.) IO 1.0 A
(VR(equiv) 0.2 VR(dc), TL = 90C,
RJA = 80C/W, P.C. Board Mounting, see Note 4., TA = 55C)
Ambient Temperature (Rated VR(dc), PF(AV) = 0, RJA = 80C/W) TA 85 80 75 C
NonRepetitive Peak Surge Current IFSM 25 (for one cycle) A
(Surge applied at rated load conditions, halfwave, single phase 60 Hz,
TL = 70C)
Operating and Storage Junction Temperature Range TJ, Tstg 65 to +125 C
(Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied) TJ(pk) 150 C
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1N5817, 1N5818, 1N5819
such that IDC = 0.4 A (IF(AV) = 0.5 A), I(FM)/I(AV) = 10, Input 115 23
Voltage = 10 V(rms), RJA = 80C/W.
Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
105 RJA (C/W) = 110
Step 1. Find VR(equiv) = (1.41)(10)(0.65) = 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 109C 80
Step 1. Find @ VR = 9.2 V and RJA = 80C/W. 95
Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W 60
I(FM)
@ = 10 and IF(AV) = 0.5 A. 85
I(AV)
Step 4. Find TA(max) from equation (3).
Step 4. Find TA(max) = 109 (80) (0.5) = 69C. 75
4.0 5.0 7.0 10 15 20 30 40
**Values given are for the 1N5818. Power is slightly lower for the VR, DC REVERSE VOLTAGE (VOLTS)
1N5817 because of its lower forward voltage, and higher for the
Figure 3. Maximum Reference Temperature
1N5819.
1N5819
Table 1. Values for Factor F
Circuit Half Wave Full Wave, Bridge Full Wave, Center Tapped*
Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive
Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3
Square Wave 0.75 1.5 0.75 0.75 1.5 1.5
*Note that VR(PK) 2.0 Vin(PK). Use line to center tap voltage for Vin.
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1N5817, 1N5818, 1N5819
{
70 5
Capacitive
1.0 10
60 Loads dc
MAXIMUM 0.7 20
50 0.5 SQUARE WAVE
TYPICAL
40 0.3 TJ 125C
0.2
30
0.1
20
0.07
10 0.05
1 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0 0.2 0.4 0.6 0.8 1.0 2.0 4.0
L, LEAD LENGTH (INCHES) IF(AV), AVERAGE FORWARD CURRENT (AMP)
1.0
0.7
0.5
0.3
ZJL(t) = ZJL r(t)
0.2
Ppk Ppk DUTY CYCLE, D = tp/t1
0.1 tp PEAK POWER, Ppk, is peak of an
0.07 TIME equivalent square power pulse.
0.05 t1
TJL = Ppk RJL [D + (1 - D) r(t1 + tp) + r(tp) - r(t1)]
where
0.03 TJL = the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.:
0.02 r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
t, TIME (ms)
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1N5817, 1N5818, 1N5819
TA(A) PD TA(K)
Use of the above model permits junction to lead thermal re- (Subscripts A and K refer to anode and cathode sides, re-
sistance for any mounting configuration to be found. For a spectively.) Values for thermal resistance components are:
given total lead length, lowest values occur when one side of RL = 100C/W/in typically and 120C/W/in maximum
the rectifier is brought as close as possible to the heatsink. RJ = 36C/W typically and 46C/W maximum.
Terms in the model signify:
TA = Ambient Temperature TC = Case Temperature
TL = Lead Temperature TJ = Junction Temperature
RS = Thermal Resistance, Heatsink to Ambient
RL = Thermal Resistance, Lead to Heatsink
RJ = Thermal Resistance, Junction to Case
PD = Power Dissipation 125
IFSM, PEAK SURGE CURRENT (AMP)
115 1 Cycle
20
TL = 70C
f = 60 Hz
10
105
7.0
5.0 TC = 100C 95
i F, INSTANTANEOUS FORWARD CURRENT (AMP)
3.0 85
Surge Applied at
2.0 Rated Load Conditions
25C 75
1.0 2.0 3.0 5.0 7.0 10 20 30 40 70 100
NUMBER OF CYCLES
1.0
0.7 Figure 8. Maximum NonRepetitive Surge Current
0.5
30
TJ = 125C
20
0.3
I R, REVERSE CURRENT (mA)
15
0.2 100C
5.0
3.0
2.0
0.1 75C
1.0
0.07
0.5
0.05 0.3 25C
0.2
0.03 0.1 1N5817
1N5818
0.02 0.05 1N5819
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.03
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0 4.0 8.0 12 16 20 24 28 32 36 40
VR, REVERSE VOLTAGE (VOLTS)
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1N5817, 1N5818, 1N5819
C, CAPACITANCE (pF)
ity carrier injection and stored charge. Satisfactory circuit
70 1N5817
analysis work may be performed by using a model consist-
ing of an ideal diode in parallel with a variable capacitance. 1N5818
50
(See Figure 10.) 1N5819
Rectification efficiency measurements show that opera- 30
tion will be satisfactory up to several megahertz. For exam- TJ = 25C
ple, relative waveform rectification efficiency is approxi- 20 f = 1.0 MHz
mately 70 percent at 2.0 MHz, e.g., the ratio of dc power to
RMS power in the load is 0.28 at this frequency, whereas 10
perfect rectification would yield 0.406 for sine wave inputs. 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
However, in contrast to ordinary junction diodes, the loss in VR, REVERSE VOLTAGE (VOLTS)
waveform efficiency is not indicative of power loss: it is
Figure 10. Typical Capacitance
simply a result of reverse current flow through the diode ca-
pacitance, which lowers the dc output voltage.
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1N5817, 1N5818, 1N5819
PACKAGE DIMENSIONS
AXIAL LEAD
PLASTIC
CASE 5904
ISSUE M
B NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
D
K MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 5.97 6.60 0.235 0.260
A B 2.79 3.05 0.110 0.120
D 0.76 0.86 0.030 0.034
K 27.94 --- 1.100 ---
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1N5817, 1N5818, 1N5819
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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