Dr.

Mohd Ayyub Khan

Assistant Professor
Department of Electronics Engineering

carriers are confined controlled flow of

within the solid carriers in evacuated
materials, deals with glass chambers,
low power deals with high power

Triodes, Tetrode,
Pentode, etc.
(freq < 1 GHZ)
Klystron, Magnetron,
TWT, etc.
(freq > 1 GHZ)
 V

At high freq, Zin f

becomes very small.

Advantages:

Limitations:
velocity modulation
 current
modulation

How energy from bunched electrons leads to amplification

d
 i

i beam-coupling coefficient

i depth of velocity
modulation
 L

Expression within
square bracket should
be zero to get same L
L

ta, tb tc
L

N
X bunching parameter

i If I J X
I i

J X

X
Jn nX n

The catcher cavity only passes the fundamental

component of the current i2
i
If I J X
J X If X
 If I J X
X i

If X
L

RF signal is ignored and only DC input is considered

 plasma oscillations.
plasma frequency p

reduced plasma frequency

q q= R p,

i I
V Rshl O V Rshl
I V q
i iV
V q

q reduced plasma frequency I

O Rsh Rshl
V Rsh V q
I I
I O i i V V
V q V q
Rsh
I I
V O i i V R V R
V q V q
I V
i R O Rshl
IV V V q
1st Intermediate 2nd Intermediate
cavities cavities I
I O i V
V q

I
V O i V R
V q

I I
I O i V O V Rsh
V q
V q

V i I I
O V R O V Rsh
V q
V q

I V I V I V I I
I O i V O V Rsh
V q V q

V i I I
O V R O V Rsh Rshl
V q V q
 I
V Rshl O V Rsh Rshl
V q

Rshl

I
O Rsh Rshl
V Rsh V q