2SK3798

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV)

2SK3798
Switching Regulator Applications
Unit: mm

Low drain-source ON resistance: RDS (ON) = 2.5 (typ.)

High forward transfer admittance: |Yfs| = 2.8 S (typ.)
Low leakage current: IDSS = 100 A (VDS = 720 V)
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 900 V

Drain-gate voltage (RGS = 20 k) VDGR 900 V
Gate-source voltage VGSS 30 V
1: Gate
DC (Note 1) ID 4 2: Drain
Drain current Pulse (t = 1 ms) A 3: Source
IDP 12
(Note 1)
Drain power dissipation (Tc = 25C) PD 40 W JEDEC
Single pulse avalanche energy
EAS 345 mJ JEITA SC-67
(Note 2)
TOSHIBA 2-10U1B
Avalanche current IAR 4 A
Repetitive avalanche energy (Note 3) EAR 4.0 mJ Weight : 1.7 g (typ.)

Channel temperature Tch 150 C

Storage temperature range Tstg -55~150 C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2
Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 3.125 C/W

Thermal resistance, channel to ambient Rth (ch-a) 62.5 C/W

Note 1: Ensure that the channel temperature does not exceed 150. 1

Note 2: VDD = 90 V, Tch = 25C, L = 39.6 mH, IAR = 4.0 A, RG = 25

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution. 3

Start of commercial production

2004-11
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 2SK3798
Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 30 V, VDS = 0 V 10 A

Gate-source breakdown voltage V (BR) GSS IG =10 A, VDS = 0 V 30 V
Drain cut-off current IDSS VDS = 720 V, VGS = 0 V 100 A
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 2 A 2.5 3.5
Forward transfer admittance Yfs VDS = 20 V, ID = 2 A 1.4 2.8 S
Input capacitance Ciss 800
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 20 pF

Output capacitance Coss 85

10 V ID = 2 A VOUT
Rise time tr VGS 20
0V
Turn-on time ton RL = 65
50
Switching time 100 ns
Fall time tf 45
VDD
200 V

Turn-off time toff Duty 1%, tw = 10 s 165

Total gate charge Qg 26

Gate-source charge Qgs VDD
400 V, VGS = 10 V, ID = 4 A 14 nC

Gate-drain charge Qgd 12

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR 4 A

Pulse drain reverse current (Note 1) IDRP 12 A

Forward voltage (diode) VDSF IDR = 4 A, VGS = 0 V 1.7 V
Reverse recovery time trr IDR = 4 A, VGS = 0 V, 1100 ns
Reverse recovery charge Qrr dIDR/dt = 100 A/s 8.3 C

Marking

Note 4: A line under a Lot No. identifies the indication of product

Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

K3798 Part No. (or abbreviation code)
environmental matters such as the RoHS compatibility of Product.
Lot No.
The RoHS is the Directive 2011/65/EU of the European Parliament
Note 4 and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.

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 2SK3798

ID VDS ID VDS
4 8
10 COMMON SOURCE COMMON SOURCE
6 Tc = 25C Tc = 25C
10
5.75 PULSE TEST PULSE TEST

(A)
(A)

3 6
5.5

DRAIN CURRENT ID
DRAIN CURRENT ID

5.25 5.75
2 4

5 5.5

5.25
1 2
4.75
5
4.75
VGS = 4.5 V
VGS = 4.5 V
0 0
0 4 8 12 16 20 24 0 4 8 12 16 20 24 28 32 36

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID VGS VDS VGS

8 20
VDS (V)

Tc = 55C COMMON SOURCE

COMMON SOURCE
Tc = 25
VDS = 20 V
(A)

16 PULSE TEST
6 PULSE TEST 25
DRAIN CURRENT ID

DRAIN-SOURCE VOLTAGE

12 ID = 4 A

4
100
8

2
2
4
1

0 0
0 2 4 6 8 10 0 4 8 12 16 20

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

Yfs ID RDS (ON) ID

10 10
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE COMMON SOURCE

DRAIN-SOURCE ON RESISTANCE

VDS = 20 V Tc = 25C
Tc = 55C
PULSE TEST 25 PULSE TEST
RDS (ON) ()

100
Yfs (S)

1
VGS = 10, 15 V

0.1 1
0.1 1 10 0.01 0.1 1 10

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

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RDS (ON) Tc IDR VDS

10 10
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

VGS = 10 V
PULSE TEST Tc = 25C
5

DRAIN REVERSE CURRENT

8 PULSE TEST
3
RDS (ON) ( )

IDR (A)
1
ID = 4 A 1
4
0.5

0.3 10 VGS = 0, 1 V
2 2

3 1

0 0.1
80 40 0 40 80 120 160 0 0.4 0.8 1.2 1.6

CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE VDS Vth Tc

10000 5
GATE THRESHOLD VOLTAGE

4
(pF)

Ciss
1000
C

3
CAPACITANCE

Vth (V)

100 Coss

2
Crss
COMMON SOURCE
10 COMMON SOURCE
VDS = 10 V
VGS = 0 V 1
ID = 1 mA
f = 1 MHz
Tc = 25C PULSE TEST
1 0
0.1 1 3 5 10 30 50 100 80 40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C)

DYNAMIC INPUT / OUTPUT

PD Tc CHARACTERISTICS
60 500 20
VDS (V)

(V)
DRAIN POWER DISSIPATION

VGS

VDS
400 16
DRAIN-SOURCE VOLTAGE

40
GATE-SOURCE VOLTAGE

400
300 VDD = 100 V 12
PD (W)

200
200 8
20
COMMON SOURCE
100 VGS
ID = 4 A 4
Tc = 25C
PULSE TEST
0 0 0
0 40 80 120 160 0 10 20 30 40

CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC)

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rth tw
10
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)

1 Duty=0.5

0.2

0.1
0.1
0.05
0.02 PDM

t
SINGLE PULSE
0.01
T
0.01
Duty = t/T
Rth (ch-c) = 3.125C/W
0.001
10 100 1 10 100 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS Tch

100 400
AVALANCHE ENERGY

300
ID max (PULSED) * 100 s *
10
EAS (mJ)
(A)

ID max (CONTINUOUS) *
200
DRAIN CURRENT ID

1 ms *

1
100
DC OPERATION
Tc = 25C

0
25 50 75 100 125 150
0.1
CHANNEL TEMPERATURE (INITIAL)
Tch (C)
SINGLE NONREPETITIVE PULSE Tc=25

CURVES MUST BE DERATED LINEARLY WITH

INCREASE IN TEMPERATURE. BVDSS

0.01 15 V
1 10 100 1000
15 V IAR
DRAIN-SOURCE VOLTAGE VDS (V)
VDD VDS

TEST CIRCUIT WAVE FORM

RG = 25 1 B VDSS
AS = L I2
VDD = 90 V, L = 39.6mH 2 B V
VDSS DD

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 2SK3798
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in this document, and related hardware, software and systems (collectively "Product") without notice.

This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.

Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
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APPLICATIONS.

PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
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applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

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