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Q. 1 In the circuit shown below what is the output voltage ^Vouth if a silicon transistor
Q and an ideal op-amp are used?
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(A) - 15 V
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(B) - 0.7 V
(C) + 0.7 V
i a(D) + 15 V
Q. 2
o
is TRUE if the gain k is increased?d
In a voltage-voltage feedback as shown below, which one of the following statements
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(A) The input impedance increases and output impedance decreases
(B) The input impedance increases and output impedance also increases
(C) The input impedance decreases and output impedance also decreases
(D) The input impedance decreases and output impedance increases
(A) 8 (B) 32
(C) 50 (D) 200
Q. 4 In the circuit shown below, the knee current of the ideal Zener dioide is 10 mA
. To maintain 5 V across RL , the minimum value of RL in W and the minimum
power rating of the Zener diode in mW, respectively, are
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a .
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(A) 125 and 125 (B) 125 and 250
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(C) 250 and 125 (D) 250 and 250
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Q. 5 In the circuit shown below the op-amps are ideal. Then, Vout in Volts is
(A) 4 (B) 6
(C) 8 (D) 10
(A) XY (B) XY
(C) XY (D) XY
Q. 7 A voltage 1000 sin wt Volts is applied across YZ . Assuming ideal diodes, the
voltage measured across WX in Volts, is
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o d (B) _sin wt + sin wt i /2
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(A) sin wt
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(C) ^sin wt - sin wt h /2 (D) 0 for all t
Q. 8
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In the circuit shown below, the silicon npn transistor Q has a very high value of
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b . The required value of R2 in kW to produce IC = 1 mA is
(A) 20 (B) 30
(C) 40 (D) 50
Q. 10 The current ib through the base of a silicon npn transistor is 1 + 0.1 cos (10000pt) mA
At 300 K, the rp in the small signal model of the transistor is
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(A) 250 W
a . (B) 27.5 W
(C) 25 W
d i (D) 22.5 W
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Q. 11 The diodes and capacitors in the circuit shown are ideal. The voltage v (t) across
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the diode D1 is
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(A) cos (wt) - 1 (B) sin (wt)
(C) 1 - cos (wt) (D) 1 - sin (wt)
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(D) high pass filter with f3dB = rad/s
(R1 + R2) C
Q. 14
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The voltage gain Av of the circuit shown below is
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(A) Av . 200 (B) Av . 100
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(C) Av . 20 (D) Av . 10
Q. 15
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ONE MARK
In the circuit shown below, capacitors C1 and C2 are very large and are shorts at
the input frequency. vi is a small signal input. The gain magnitude vo at 10 M
vi
rad/s is
Q. 16 The circuit below implements a filter between the input current ii and the output
voltage vo . Assume that the op-amp is ideal. The filter implemented is a
i n
Q. 17 In the circuit shown below, for the MOS transistors, mn Cox = 100 mA/V 2 and the
.
threshold voltage VT = 1 V . The voltage Vx at the source of the upper transistor is
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a .
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(A) 1 V (B) 2 V
(C) 3 V (D) 3.67 V
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Q. 18 For a BJT, the common base current gain a = 0.98 and the collector base
junction reverse bias saturation current ICO = 0.6 mA . This BJT is connected in
the common emitter mode and operated in the active region with a base drive
current IB = 20 mA . The collector current IC for this mode of operation is
(A) 0.98 mA (B) 0.99 mA
(C) 1.0 mA (D) 1.01 mA
Q. 19 For the BJT, Q1 in the circuit shown below, b = 3, VBEon = 0.7 V, VCEsat = 0.7 V
. The switch is initially closed. At time t = 0 , the switch is opened. The time t at
which Q1 leaves the active region is
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(A) 10 ms (B) 25 ms
(C) 50 ms (D) 100 ms
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Q. 20 The bias current IDC through the diodes is
(A) 1 mA (B) 1.28 mA
(C) 1.5 mA
a .
(D) 2 mA
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(C) 2 cos (wt) mV (D) 22 cos (wt) mV
.
2010
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Q. 22
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The amplifier circuit shown below uses a silicon transistor. The capacitors CC
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and CE can be assumed to be short at signal frequency and effect of output
resistance r0 can be ignored. If CE is disconnected from the circuit, which one of
the following statements is true
(D) Both input resistance Ri and the magnitude of voltage gain AV increases
Q. 23 In the silicon BJT circuit shown below, assume that the emitter area of transistor
Q1 is half that of transistor Q2
Q. 24
is
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Assuming the OP-AMP to be ideal, the voltage gain of the amplifier shown below
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a .
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(A) - R2 w (B) - R 3
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R1 R1
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R || R 3
(C) - 2 (D) -b R2 + R 3 l
R1 R1
2010 TWO MARKS
Q. 27 The transfer characteristic for the precision rectifier circuit shown below is
(assume ideal OP-AMP and practical diodes)
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Statement for Linked Answer Question 30 and 31
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Consider for CMOS circuit shown, where the gate voltage v0 of the n-MOSFET is
a
increased from zero, while the gate voltage of the p -MOSFET is kept constant
i
at 3 V. Assume, that, for both transistors, the magnitude of the threshold voltage
d
is 1 V and the product of the trans-conductance parameter is 1mA. V - 2
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Q. 30
For small increase in VG beyond 1V, which of the following gives the correct
description of the region of operation of each MOSFET
(A) Both the MOSFETs are in saturation region
(B) Both the MOSFETs are in triode region
(C) n-MOSFETs is in triode and p -MOSFET is in saturation region
(D) n- MOSFET is in saturation and p -MOSFET is in triode region
Q. 31 Estimate the output voltage V0 for VG = 1.5 V. [Hints : Use the appropriate
current-voltage equation for each MOSFET, based on the answer to Q.4.16]
(A) 4 - 1 (B) 4 + 1
2 2
(C) 4 - 3 (D) 4 + 3
2 2
Q. 32 In the circuit shown below, the op-amp is ideal, the transistor has VBE = 0.6 V
and b = 150 . Decide whether the feedback in the circuit is positive or negative
and determine the voltage V at the output of the op-amp.
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(A) V0 (t) =- 1500 (A cos 20t + B sin 106 t)
(B) V0 (t) = - 1500( A cos 20t + B sin 106 t)
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(C) V0 (t) =- 1500B sin 106 t
(D) V0 (t) =- 150B sin 106 t
Q. 35 For the circuit shown in the following figure, transistor M1 and M2 are identical
NMOS transistors. Assume the M2 is in saturation and the output is unloaded.
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Consider the following circuit using an ideal OPAMP. The I-V characteristic of
the diode is described by the relation I = I 0 _eV - 1i where VT = 25 mV, I0 = 1m A
V
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t
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and V is the voltage across the diode (taken as positive for forward bias). For an
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input voltage Vi =- 1 V , the output voltage V0 is
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(A) 0 V (B) 0.1 V
(C) 0.7 V (D) 1.1 V
Q. 37
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The OPAMP circuit shown above represents a
Q. 38 Two identical NMOS transistors M1 and M2 are connected as shown below. Vbias
is chosen so that both transistors are in saturation. The equivalent gm of the pair
is defied to be 2Iout at constant Vout
2Vi
The equivalent gm of the pair is
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(A) - 12V to +12 V
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(C) -5 V to +5 V (D) 0 V and 5 V
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Statement for Linked Answer Question 40 and 41
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In the following transistor circuit, VBE = 0.7 V, r3 = 25 mV/IE , and b and all the
capacitances are very large
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(B) a large input resistance and a small output resistance
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(C) a small input resistance and a large output resistance
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(D) a small input resistance and a small output resistance
a .
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d i TWO MARKS
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Q. 44 For the Op-Amp circuit shown in the figure, V0 is
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(A) -2 V
(C) -0.5 V
(B) -1 V
(D) 0.5 V
Q. 45 For the BJT circuit shown, assume that the b of the transistor is very large and
VBE = 0.7 V. The mode of operation of the BJT is
Q. 46 In the Op-Amp circuit shown, assume that the diode current follows the equation
I = Is exp (V/VT ). For Vi = 2V, V0 = V01, and for Vi = 4V, V0 = V02 .
The relationship between V01 and V02 is
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Q. 47 In the CMOS inverter circuit shown, if the trans conductance parameters of the
NMOS and PMOS transistors are
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kn = kp = mn Cox Wn = mCox p = 40mA/V2
Ln Lp
and their threshold voltages ae VTHn = VTHp = 1 V the current I is
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a
(A) 0 A (B) 25 mA
(C) 45 mA
d i (D) 90 mA
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Q. 48 For the Zener diode shown in the figure, the Zener voltage at knee is 7 V, the knee
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current is negligible and the Zener dynamic resistance is 10 W. If the input voltage
(Vi) range is from 10 to 16 V, the output voltage (V0) ranges from
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(A) 7.00 to 7.29 V (B) 7.14 to 7.29 V
(C) 7.14 to 7.43 V (D) 7.29 to 7.43 V
(C) 1 (D) 1
1 - sRC 1 + sRC
Q. 50 If Vi = V1 sin (wt) and V0 = V2 sin (wt + f), then the minimum and maximum values
of f (in radians) are respectively
(A) - p and p (B) 0 and p
2 2 2
(C) - p and 0 p
(D) - and 0
2
Q. 51 The input impedance (Zi) and the output impedance (Z0) of an ideal trans-
conductance (voltage controlled current source) amplifier are
(A) Zi = 0, Z0 = 0
(B) Zi = 0, Z0 = 3
(C) Zi = 3, Z0 = 0
(D) Zi = 3, Z0 = 3
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Q. 52 An n-channel depletion MOSFET has following two points on its ID - VGs curve:
c
(i) VGS = 0 at ID = 12 mA and
(ii) VGS =- 6 Volts at ID = 0 mA
a .
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Which of the following Q point will given the highest trans conductance gain for
d
small signals?
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(A) VGS =- 6 Volts (B) VGS =- 3 Volts
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(C) VGS = 0 Volts (D) VGS = 3 Volts
2006
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Q. 53
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For the circuit shown in the following figure, the capacitor C is initially uncharged.
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At t = 0 the switch S is closed. The Vc across the capacitor at t = 1 millisecond is
In the figure shown above, the OP-AMP is supplied with !15V .
Q. 54 For the circuit shown below, assume that the zener diode is ideal with a breakdown
voltage of 6 volts. The waveform observed across R is
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in
In the transistor amplifier circuit shown in the figure below, the transistor has
the following parameters:
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bDC = 60 , VBE = 0.7V, hie " 3
The capacitance CC can be assumed to be infinite.
.
In the figure above, the ground has been shown by the symbol 4
a
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Q. 55
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Under the DC conditions, the collector-or-emitter voltage drop is
(A) 4.8 Volts (B) 5.3 Volts
(C) 6.0 Volts (D) 6.6 Volts
Q. 59 If the unregulated voltage increases by 20%, the power dissipation across the
transistor Q1
(A) increases by 20% (B) increases by 50%
(C) remains unchanged
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(D) decreases by 20%
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2005 ONE MARK
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Q. 60 The input resistance Ri of the amplifier shown in the figure is
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(A) 30 kW w
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(B) 10 kW
4
(C) 40 kW (D) infinite
Q. 61
The effect of current shunt feedback in an amplifier is to
(A) increase the input resistance and decrease the output resistance
(B) increases both input and output resistance
(C) decrease both input and output resistance
(D) decrease the input resistance and increase the output resistance
Q. 64 For an npn transistor connected as shown in figure VBE = 0.7 volts. Given that
reverse saturation current of the junction at room temperature 300 K is 10 - 13 A,
the emitter current is
(A) 30 mA (B) 39 mA
(C) 49 mA (D) 20 mA
Q. 65 The voltage e0 is indicated in the figure has been measured by an ideal voltmeter.
Which of the following can be calculated ?
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(A) Bias current of the inverting input only
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(B) Bias current of the inverting and non-inverting inputs only
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(C) Input offset current only
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(D) Both the bias currents and the input offset current
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Q. 66 The Op-amp circuit shown in the figure is filter. The type of filter and its cut. Off
frequency are respectively
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(A) high pass, 1000 rad/sec. (B) Low pass, 1000 rad/sec
(C) high pass, 1000 rad/sec (D) low pass, 10000 rad/sec
Q. 67 The circuit using a BJT with b = 50 and VBE = 0.7V is shown in the figure. The
base current IB and collector voltage by VC and respectively
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Q. 68 The Zener diode in the regulator circuit shown in the figure has a Zener voltage
of 5.8 volts and a zener knee current of 0.5 mA. The maximum load current
drawn from this current ensuring proper functioning over the input voltage range
between 20 and 30 volts, is
Q. 69 Both transistors T1 and T2 show in the figure, have a b = 100 , threshold voltage of
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1 Volts. The device parameters K1 and K2 of T1 and T2 are, respectively, 36 mA/V2
and 9 mA/V 2 . The output voltage Vo i s
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a .
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(A) 1 V
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(C) 3 V
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Common Data For Q. 70 to 72
Given, rd = 20kW , IDSS = 10 mA, Vp =- 8 V
Q. 73 Given the ideal operational amplifier circuit shown in the figure indicate the
correct transfer characteristics assuming ideal diodes with zero cut-in voltage.
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2004 ONE MARK
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25 mV, the transconductance (gm) and the input resistance (rp) of the transistor
in the common emitter configuration, are
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(A) gm = 25 mA/V and rp = 15.625 kW (B) gm = 40 mA/V and rp = 4.0 kW
c
(C) gm = 25 mA/V and rp = 2.5 k W (D) gm = 40 mA/V and rp = 2.5 kW
Q. 78
a .
The value of C required for sinusoidal oscillations of frequency 1 kHz in the
circuit of the figure is
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(A) 1 mF
2p
(B) 2p mF
(C) 1 mF (D) 2p 6 mF
2p 6
Q. 79 In the op-amp circuit given in the figure, the load current iL is
(A) - Vs (B) Vs
R2 R2
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(C) - Vs (D) Vs
RL R1
Q. 80 In the voltage regulator shown in the figure, the load current can vary from 100
mA to 500 mA. Assuming that the Zener diode is ideal (i.e., the Zener knee
current is negligibly small and Zener resistance is zero in the breakdown region),
the value of R is
(A) 7 W (B) 70 W
(C) 70 W (D) 14 W
3
in
Q. 81 In a full-wave rectifier using two ideal diodes, Vdc and Vm are the dc and peak
.
values of the voltage respectively across a resistive load. If PIV is the peak inverse
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voltage of the diode, then the appropriate relationships for this rectifier are
(A) Vdc = Vm , PIV = 2Vm (B) Idc = 2 Vm , PIV = 2Vm
.
p p
(C) Vdc = 2 Vm , PIV = Vm
p
i a (D) Vdc Vm , PIV = Vm
p
Q. 82
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the circuit shown in the figure d
Assume that the b of transistor is extremely large and VBE = 0.7V, IC and VCE in
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(A) IC = 1 mA, VCE = 4.7 V (B) IC = 0.5 mA, VCE = 3.75 V
(C) IC = 1 mA, VCE = 2.5 V (D) IC = 0.5 mA, VCE = 3.9 V
Q. 83 Choose the correct match for input resistance of various amplifier configurations
shown below :
Configuration Input resistance
CB : Common Base LO : Low
CC : Common Collector MO : Moderate
CE : Common Emitter HI : High
(A) CB - LO, CC - MO, CE - HI
(B) CB - LO, CC - HI, CE - MO
(C) CB - MO, CC - HI, CE - LO
(D) CB - HI, CC - LO, CE - MO
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Q. 85 If the input to the ideal comparators shown in the figure is a sinusoidal signal of 8
V (peak to peak) without any DC component, then the output of the comparators
has a duty cycle of
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(A) 1/2 (B) 1/3
.
(C) 1/6 (D) 1/2
Q. 86
c o
If the differential voltage gain and the common mode voltage gain of a differential
.
amplifier are 48 dB and 2 dB respectively, then common mode rejection ratio is
a
i
(A) 23 dB (B) 25 dB
d
(C) 46 dB (D) 50 dB
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Generally, the gain of a transistor amplifier falls at high frequencies due to the
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Q. 87
(A) internal capacitances of the device
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(B) coupling capacitor at the input
(C) skin effect
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(D) coupling capacitor at the output
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2003 TWO MARKS
Q. 89 In the amplifier circuit shown in the figure, the values of R1 and R2 are such that
the transistor is operating at VCE = 3 V and IC = 1.5 mA when its b is 150. For
a transistor with b of 200, the operating point (VCE , IC ) is
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Q. 90 The oscillator circuit shown in the figure has an ideal inverting amplifier. Its
frequency of oscillation (in Hz) is
(A) 1 (B) 1
(2p 6 RC) (2pRC)
(C) 1 (D) 6
in
( 6 RC) (2pRC)
.
The output voltage of the regulated power supply shown in the figure is
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Q. 91
a .
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(A) 3 V (B) 6 V
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(C) 9 V (D) 12 V
Q. 92 If the op-amp in the figure is ideal, the output voltage Vout will be equal to
(A) 1 V (B) 6 V
(C) 14 V (D) 17 V
Q. 93 Three identical amplifiers with each one having a voltage gain of 50, input
resistance of 1 kW and output resistance of 250 W are cascaded. The opened
circuit voltages gain of the combined amplifier is
(A) 49 dB (B) 51 dB
(C) 98 dB (D) 102 dB
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Q. 96 A 741-type opamp has a gain-bandwidth product of 1 MHz. A non-inverting
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amplifier suing this opamp and having a voltage gain of 20 dB will exhibit a -3
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dB bandwidth of
c
(A) 50 kHz (B) 100 kHz
.
(C) 1000 kHz (D) 1000 kHz
a
17 7.07
Q. 97
d i
Three identical RC-coupled transistor amplifiers are cascaded. If each of the
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amplifiers has a frequency response as shown in the figure, the overall frequency
response is as given in
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Q. 98 The circuit in the figure employs positive feedback and is intended to generate
V (f) 1
sinusoidal oscillation. If at a frequency f0, B (f) = 3 f = +0c, then to sustain
V0 (f) 6
oscillation at this frequency
. in
Q. 99 An amplifier using an opamp with a slew-rate SR = 1 V/m sec has a gain of 40
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dB. If this amplifier has to faithfully amplify sinusoidal signals from dc to 20 kHz
without introducing any slew-rate induced distortion, then the input signal level
.
must not exceed.
a
(A) 795 mV (B) 395 mV
(C) 79.5 mV
d i (D) 39.5 mV
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A zener diode regulator in the figure is to be designed to meet the specifications:
Q. 100
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IL = 10 mA V0 = 10 V and Vin varies from 30 V to 50 V. The zener diode has
Vz = 10 V and Izk (knee current) =1 mA. For satisfactory operation
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(A) R # 1800W
(C) 3700W # R # 4000W
(B) 2000W # R # 2200W
(D) R $ 4000W
Q. 101 The voltage gain Av = v0 of the JFET amplifier shown in the figure is IDSS = 10
vt
mA Vp =- 5 V(Assume C1, C2 and Cs to be very large
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Statement 2:
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Bistable multi vibrator can be used for storing binary information.
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(A) Only statement 1 is correct
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(B) Only statement 2 is correct
a
(C) Both the statements 1 and 2 are correct
i
(D) Both the statements 1 and 2 are incorrect
d
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2001 TWO MARKS
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Q. 105
gain b0 = 90 . For this transistor fT and fb are
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(A) fT = 1.64 # 108 Hz and fb = 1.47 # 1010 Hz
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(B) fT = 1.47 # 1010 Hz and fb = 1.64 # 108 Hz
(C) fT = 1.33 # 1012 Hz and fb = 1.47 # 1010 Hz
Q. 106
(D) fT = 1.47 # 1010 Hz and fb = 1.33 # 1012 Hz
The transistor shunt regulator shown in the figure has a regulated output voltage
of 10 V, when the input varies from 20 V to 30 V. The relevant parameters for
the zener diode and the transistor are : Vz = 9.5 , VBE = 0.3 V, b = 99 , Neglect the
current through RB . Then the maximum power dissipated in the zener diode (Pz )
and the transistor (PT ) are
4
(A) Hartely oscillator with foscillation = 79.6 MHz
(B) Colpitts oscillator with foscillation = 50.3 MHz
(C) Hartley oscillator with foscillation = 159.2 MHz
(D) Colpitts oscillator with foscillation = 159.3 MHz
. in
Q. 108 The inverting OP-AMP shown in the figure has an open-loop gain of 100.
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The closed-loop gain V0 is
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Vs
(A) - 8 (B) - 9
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(C) - 10 (D) - 11
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Q. 109 In the figure assume the OP-AMPs to be ideal. The output v0 of the circuit is
t
(A) 10 cos (100t) (B) 10 #0 cos (100t) dt
t
(C) 10 - 4 #0 cos (100t) dt (D) 10 - 4 d cos (100t)
dt
Q. 111 In the differential amplifier of the figure, if the source resistance of the current
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
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a .
(A) -1 V
(C) +1 V
d i (B) 2 V
(D) +15 V
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Q. 113 The current gain of a bipolar transistor drops at high frequencies because of
(A) transistor capacitances (B) high current effects in the base
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(C) parasitic inductive elements (D) the Early effect
Q. 114
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If the op-amp in the figure, is ideal, then v0 is
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(A) zero (B) (V1 - V2) sin wt
(C) - (V1 + V2) sin wt (D) (V1 + V2) sin wt
Q. 116 Assume that the op-amp of the figure is ideal. If vi is a triangular wave, then v0
will be
Q. 117 The most commonly used amplifier is sample and hold circuits is
(A) a unity gain inverting amplifier
in
(B) a unity gain non-inverting amplifier
(C) an inverting amplifier with a gain of 10
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(D) an inverting amplifier with a gain of 100
a .
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2000 TWO MARKS
Q. 118
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In the circuit of figure, assume that the transistor is in the active region. It has a
large b and its base-emitter voltage is 0.7 V. The value of Ic is
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(A) Indeterminate since Rc is not given (B) 1 mA
(C) 5 mA (D) 10 mA
Q. 119 If the op-amp in the figure has an input offset voltage of 5 mV and an open-loop
voltage gain of 10000, then v0 will be
(A) 0 V (B) 5 mV
(C) + 15 V or -15 V (D) +50 V or -50 V
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Q. 120 The first dominant pole encountered in the frequency response of a compensated
op-amp is approximately at
(A) 5 Hz (B) 10 kHz
(C) 1 MHz (D) 100 MHz
Q. 122 In the cascade amplifier shown in the given figure, if the common-emitter
stage (Q1) has a transconductance gm1 , and the common base stage (Q2) has
a transconductance gm2 , then the overall transconductance g (= i 0 /vi) of the
cascade amplifier is
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a .
(A) gm1
d i (B) gm2
g
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(C) m1 (D) m2
2 2
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Q. 123 Crossover distortion behavior is characteristic of
(A) Class A output stage (B) Class B output stage
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(C) Class AB output stage (D) Common-base output stage
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1999 TWO MARK
Q. 126 The circuit of the figure is an example of feedback of the following type
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Q. 128 From a measurement of the rise time of the output pulse of an amplifier whose is
a small amplitude square wave, one can estimate the following parameter of the
amplifier
in
(A) gain-bandwidth product (B) slow rate
.
(C) upper 3dB frequency (D) lower 3dB frequency
co
Q. 129 The emitter coupled pair of BJTs given a linear transfer relation between the
.
differential output voltage and the differential output voltage and the differential
i a
input voltage Vid is less a times the thermal voltage, where a is
d
(A) 4 (B) 3
o
(C) 2 (D) 1
Q. 130
. n
In a shunt-shunt negative feedback amplifier, as compared to the basic amplifier
(A) both, input and output impedances,decrease
w
(B) input impedance decreases but output impedance increases
w
(C) input impedance increase but output
w
(D) both input and output impedances increases.
Q. 131
1998
A multistage amplifier has a low-pass response with three real poles at
TWO MARKS
Q. 132 One input terminal of high gain comparator circuit is connected to ground and a
sinusoidal voltage is applied to the other input. The output of comparator will be
(A) a sinusoid (B) a full rectified sinusoid
(C) a half rectified sinusoid (D) a square wave
Q. 133 In a series regulated power supply circuit, the voltage gain Av of the pass
transistor satisfies the condition
(A) Av " 3 (B) 1 << Av < 3
(C) Av . 1 (D) Av << 1
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
Q. 134 For full wave rectification, a four diode bridge rectifier is claimed to have the
following advantages over a two diode circuit :
(A) less expensive transformer,
(B) smaller size transformer, and
(C) suitability for higher voltage application.
Of these,
(A) only (1) and (2) are true (B) only (1) and (3) are true
(C) only (2) and (3) are true (D) (1), (2) as well as (3) are true
Q. 135 In the MOSFET amplifier of the figure is the signal output V1 and V2 obey the
relationship
. i n
c o
(A) V1 = V2
a . (B) V1 =-V2
i
2 2
(C) V1 = 2V2
o d (D) V1 =- 2V2
.n
Q. 136 For small signal ac operation, a practical forward biased diode can be modelled as
(A) a resistance and a capacitance in series
w
(B) an ideal diode and resistance in parallel
w
(C) a resistance and an ideal diode in series
w
(D) a resistance
Q. 137
1997 ONE MARK
In the BJT amplifier shown in the figure is the transistor is based in the forward
active region. Putting a capacitor across RE will
(A) decrease the voltage gain and decrease the input impedance
(B) increase the voltage gain and decrease the input impedance
(C) decrease the voltage gain and increase the input impedance
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
(D) increase the voltage gain and increase the input impedance
Q. 139 In a common emitter BJT amplifier, the maximum usable supply voltage is
limited by
(A) Avalanche breakdown of Base-Emitter junction
(B) Collector-Base breakdown voltage with emitter open (BVCBO)
(C) Collector-Emitter breakdown voltage with base open (BVCBO)
(D) Zener breakdown voltage of the Emitter-Base junction
in
1997 TWO MARKS
.
co
Q. 140 In the circuit of in the figure is the current iD through the ideal diode (zero cut
in voltage and forward resistance) equals
a .
d i
n o
.
w
(A) 0 A (B) 4 A
w
(C) 1 A (D) None of the above
w
Q. 141 The output voltage V0 of the circuit shown in the figure is
(A) - 4 V (B) 6 V
(C) 5 V (D) - 5.5 V
Q. 142 A half wave rectifier uses a diode with a forward resistance Rf . The voltage is
Vm sin wt and the load resistance is RL . The DC current is given by
(A) Vm (B) Vm
2 RL p (R f + RL)
(C) 2Vm (D) Vm
p RL
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
Q. 143 In the circuit of the given figure, assume that the diodes are ideal and the meter
is an average indicating ammeter. The ammeter will read
. i n
c o
a .
i
(A) a non-inverting amplifier (B) an inverting amplifier
(C) an oscillator
1996
.n TWO MARKS
Q. 145
w
In the circuit shown in the given figure N is a finite gain amplifier with a gain
w
of k , a very large input impedance, and a very low output impedance. The input
w
impedance of the feedback amplifier with the feedback impedance Z connected
as shown will be
(A) Z b1 - 1 l (B) Z (1 - k)
k
(C) Z (D) Z
(k - 1) (1 - k)
Q. 146 A Darlington stage is shown in the figure. If the transconductance of Q1 is gm1 and
c
Q2 is gm2 , then the overall transconductance gmc ;T i cc E is given by
vbe
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
Q. 147 Value of R in the oscillator circuit shown in the given figure, so chosen that it just
oscillates at an angular frequency of w. The value of w and the required value of
R will respectively be
co
(C) 2 # 10 4 rad/ sec, 105 W (D) 105 rad/ sec, 105 W
Q. 148
a .
A zener diode in the circuit shown in the figure is has a knee current of 5 mA,
d i
and a maximum allowed power dissipation of 300 mW. What are the minimum
and maximum load currents that can be drawn safely from the circuit, keeping
o
the output voltage V0 constant at 6 V?
. n
w
w
w
(A) 0 mA, 180 mA (B) 5 mA, 110 mA
(C) 10 mA, 55 mA (D) 60 mA, 180 mA
***********
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
SOLUTIONS
i n
we have
.
VC = 0
VB = 0
c o
.
IC = 5 mA
i a
i.e.,the base collector junction is reverse biased (zero voltage) therefore, the
d
collector current (IC ) can have a value only if base-emitter is forward biased.
o
Hence,
.n
VBE = 0.7 volts
& VB - VE = 0.7
w
& 0 - Vout = 0.7
Vout =- 0.7 volt
w
or,
Sol. 2 Option (A) is correct.
w
The i/p voltage of the system is given as
Vin = V1 + Vf = V1 + k Vout
= V1 + k A 0 V1 ^Vout = A 0 V1h
= V1 ^1 + k A 0h
Therefore, if k is increased then input voltage is also increased so, the input
impedance increases. Now, we have
Vout = A 0 V1 = A 0Vin = A 0 Vin
^1 + k A 0h ^1 + k A 0h
Since, Vin is independent of k when seen from output mode, the output voltage
decreases with increase in k that leads to the decrease of output impedance.
Thus, input impedance increases and output impedance decreases.
Sol. 3 Option (A) is correct.
For the given circuit, we obtain the small signal model as shown in figure below :
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
. in
It gives the lower cutoff frequency of transfer function.
co
i.e., w0 = 1
C ^RD + RL h
.
or, f0 = 1 = 1
2pC ^RD + RL h 2p # 10-6 # 20 # 103
= 7.97 . 8 Hz
i a
Option (B) is correct.
d
Sol. 4
n o
.
w
w
w
From the circuit, we have
Is = I Z + I L
or, I Z = Is - I L (1)
Since, voltage across zener diode is 5 V so, current through 100 W resistor is
obtained as
Is = 10 - 5 = 0.05 A
100
Therefore, the load current is given by
IL = 5
RL
Since, for proper operation, we must have
IZ $ Iknes
So, from Eq. (1), we write
0.05 A - 5 $ 10 mA
RL
50 mA - 5 $ 10 mA
RL
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40 mA $ 5
RL
40 # 10 $ 5
-3
RL
1 # RL
40 # 10-3 5
5 # RL
40 # 10-3
or, 125 W # RL
Therefore, minimum value of RL = 125 W
Now, we know that power rating of Zener diode is given by
PR = VZ IZ^maxh
IZ^maxh is maximum current through zener diode in reverse bias. Maximum
currrent through zener diode flows when load current is zero. i.e.,
IZ^maxh = Is = 10 - 5 = 0.05
100
Therefore, PR = 5 # 0.05 W = 250 mW
i n
Sol. 5 Option (C) is correct.
o.
. c
i a
o d
.n
w
w
w
For the given ideal op-Amps we can assume
V 2- = V 2+ = V2 (ideal)
V 1+ = V 1- = V1 (ideal)
So, by voltage division
V1 = Vout # 1
2
Vout = 2V1
and, as the I/P current in Op-amp is always zero therefore, there will be no
voltage drop across 1 KW in II op-amp
i.e., V2 = 1 V
Therefore,
V1 - V2 = V2 - ^- 2h
1 1
& V1 - 1 = 1 + 2
or, V1 = 4
Hence, Vout = 2V1 = 8 volt
Sol. 6 Option (B) is correct.
For the given circuit, we can make the truth table as below
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
X Y Z
0 0 0
0 1 1
1 0 0
1 1 0
Logic 0 means voltage is v = 0 volt and logic 1 means voltage is 5 volt
For x = 0 , y = 0 , Transistor is at cut off mode and diode is forward biased. Since,
there is no drop across forward biased diode.
So, Z =Y=0
For x = 0 , y = 1, Again Transistor is in cutoff mode, and diode is forward biased.
with no current flowing through resistor.
So, Z =Y=1
For x = 1, y = 0 , Transistor is in saturation mode and so, z directly connected to
ground irrespective of any value of Y .
i.e., Z = 0 (ground)
in
Similarly for X = Y = 1
.
Z = 0 (ground)
co
Hence, from the obtained truth table, we get
Z =XY
Sol. 7 Option (D) is correct.
a .
i
Given, the input voltage
d
VYZ = 100 sin wt
n o
.
w
w
w
For + ve half cycle
VYZ > 0
i.e., VY is a higher voltage than VZ
So, the diode will be in cutoff region. Therefore, there will no voltage difference
between X and W node.
i.e., VWX = 0
Now, for - ve half cycle all the four diodes will active and so, X and W
terminal is short circuited
i.e., VWX = 0
Hence, VWX = 0 for all t
Sol. 8 Option (C) is correct.
The equivalent circuit can be shown as
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
n
^ h^ h
3R2 - 0.7 - 10-3 500 = 0
i
or,
R1 + R 2
or, 3R2
60 kW + R2
o.
= 0.7 + 0.5
or,
. c
3R2 = ^60 kWh^1.2h + 1.2R2
or,
i a
1.8R2 = ^60 kWh # ^1.2h
Hence,
o d R2 = 60 # 1.2 = 40 kW
1.8
.n
Sol. 9 Option (D) is correct.
Let v > 0.7 V and diode is forward biased. By applying Kirchoffs voltage law
w10 - i # 1k - v = 0
w
10 - :v - 0.7 D (1000) - v = 0
w
500
10 - (v - 0.7) # 2 - v = 0
10 - 3v + 1.4 = 0
v = 11.4 = 3.8 V > 0.7
3
(Assumption is true)
. in
The peak rectifier adds + 1 V to peak voltage, so overall peak voltage lowers down
co
by - 1 volt.
So, vo = cos wt - 1
a .
i
Sol. 12 Option (A) is correct.
d
We put a test source between terminal 1, 2 to obtain equivalent impedance
n o
.
w
w
w ZTh = Vtest
Itest
Applying KCL at top right node
Vtest + Vtest - 99I = I
9 k + 1k 100 b test
0 - Vi (jw) 0 - Vo (jw)
+ =0
1 +R R2
1
jw C
Vo (jw) - Vi (jw)
=
R2 1 +R
1
jw C
Vi (jw) R2
Vo (jw) =-
R1 - j 1
wC
n
At w " 0 (Low frequencies), 1 " 3, so V = 0
i
o
wC
At w " 3 (higher frequencies)
o.
1 " 0, so V (jw) =- R2 V (jw)
. c
o
wC R1 i
a
The filter passes high frequencies so it is a high pass filter.
d i
H (jw) = Vo = - R2
Vi R1 - j 1
o
wC
.n
H (3) = - R 2
= R 2
R1 R1
w
At 3 dB frequency, gain will be 2 times of maximum gain 6H (3)@
w
H ^ jw0h = 1 H (3)
2
w
R2 1 R2
So,
1
= b R1 l
2
R1 + 2 2 2
w0 C
2R 12 = R 12 + 1
w02 C 2
R 12 =1
w 2C 2
w0 = 1
R1 C
Sol. 14 Option (D) is correct.
DC Analysis :
VC - 100IB - 0.7 = 0
VC = 100IB + 0.7 ...(i)
IC - IE = 13.7 - VC = (b + 1) IB
12k
13.7 - VC = 100I ...(ii)
B
12 # 103
Solving equation (i) and (ii),
IB = 0.01 mA
Small Signal Analysis :
Transforming given input voltage source into equivalent current source.
. in
co
This is a shunt-shunt feedback amplifier.
.
Given parameters,
a
rp = VT = 25 mV = 2.5 kW
i
IB 0.01 mA
d
b 100
gm = = = 0.04 s
o
rp 2.5 # 1000
n
Writing KCL at output node
. v0 + g v + v0 - vp = 0
w
m p
RC RF
w
v 0 : 1 + 1 D + v p :gm - 1 D = 0
RC RF RF
w
Substituting RC = 12 kW, RF = 100 kW, gm = 0.04 s
v 0 (9.33 # 10-5) + v p (0.04) = 0
Writing KCL at input node
v 0 =- 428.72Vp ...(i)
vi = v p + v p + v p - vo
Rs Rs rp RF
vi = v 1 + 1 + 1 - v 0
p:
Rs Rs rp RF D RF
vi = v (5.1 10-4) - v 0
p #
Rs RF
Substituting Vp from equation (i)
vi = - 5.1 # 10-4 v - v 0
0
Rs 428.72 RF
vi =- 1.16 # 10-6 v 0 - 1 # 10-5 v 0 Rs = 10 kW (source resistance)
10 # 103
vi =- 1.116 # 10-5
10 # 103
Av = v 0 = 1 - 8.96
vi 10 # 103 # 1.116 # 10-5
Sol. 15 Option (A) is correct.
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
. i n
c o
a .
d i
o
.n
From diagram we can write
Ii = Vo + Vo
w
R1 sL1
w
Transfer function
H (s) = Vo = sR1 L1
w
I1 R1 + sL1
jw R 1 L 1
or H (jw) =
R 1 + jw L 1
At w = 0 H (jw) = 0
At w = 3 H (jw) = R1 = constant . Hence HPF.
Sol. 17 Option (C) is correct.
Given circuit is shown below.
For transistor M2 ,
VGS = VG - VS = Vx - 0 = Vx
VDS = VD - VS = Vx - 0 = Vx
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
mn C 0x m C
(4) (5 - Vx - 1) 2 = n 0x 1 (Vx - 1) 2
2 2
4 (4 - Vx ) 2 = (Vx - 1) 2
or 2 (4 - Vx ) = ! (Vx - 1)
Taking positive root, 8 - 2Vx = Vx - 1
Vx = 3 V
At Vx = 3 V for M1,VGS = 5 - 3 = 2 V < VDS . Thus our assumption is true and
Vx = 3 V .
Sol. 18 Option (D) is correct.
We have a = 0.98
Now b = a = 4.9
in
1-a
.
In active region, for common emitter amplifier,
co
IC = bIB + (1 + b) ICO ...(1)
Substituting ICO = 0.6 mA and IB = 20 mA in above eq we have,
IC = 1.01 mA
a .
Sol. 19 Option (C) is correct.
d i
o
In active region VBEon = 0.7 V
n
Emitter voltage VE = VB - VBEon =- 5.7 V
Emitter Current
. IE = E
V - (- 10) - 5.7 - (- 10)
= = 1 mA
w
4.3k 4.3k
w
Now IC . IE = 1 mA
Applying KCL at collector
w i1 = 0.5 mA
Since i1 = C dVC
dt
or VC = 1 # i1 dt = i1 t ...(1)
C C
with time, the capacitor charges and voltage across collector changes from 0
towards negative.
. i n
Sol. 22 Option (A) is correct.
c o
.
The equivalent circuit of given amplifier circuit (when CE is connected, RE is
a
short-circuited)
d i
o
.n
w
w
Input impedance Ri = RB || r p
Voltage gain AV = gm RC
w
Now, if CE is disconnected, resistance RE appears in the circuit
VB =- 10 - (- 0.7) =- 9.3 V
0 - (- 9.3)
Collector current I1 = = 1 mA
(9.3 kW)
b 1 = 700 (high), So IC . IE 1
in
1 2
1 - (b 1 + 1) IB = IB + IB
.
1 1 2
IB
co
1 = (700 + 1 + 1) 2
+ IB
2 2
.
IB . 2
a
2
702
i
I 0 = IC = b 2 : IB = 715 # 2 . 2 mA
d
2
702
o
Sol. 24 Option (A) is correct.
n
The circuit is as shown below :
.
w
w
w
So, 0 - Vi + 0 - Vo = 0
R1 R2
or Vo =- R2
Vi R1
Sol. 25 Option (B) is correct.
By small signal equivalent circuit analysis
. i n
Current
4R R
c o
I = 20 - 0 + Vi - 0 = 5 + Vi
R
If I > 0, diode D2 conducts
a .
2
d i
So, for 5 + VI > 0 & VI > - 5, D2 conducts
o
Equivalent circuit is shown below
.n
w
w
w
Output is Vo = 0 . If I < 0 , diode D2 will be off
5 + VI < 0 & V < - 5, D is off
I 2
R
The circuit is shown below
0 - Vi + 0 - 20 + 0 - Vo = 0
R 4R R
or Vo =- Vi - 5
At Vi =- 5 V, Vo = 0
At Vi =- 10 V, Vo = 5 V
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
. in
Sol. 31 Option (C) is correct.
co
Sol. 32 Option (D) is correct.
The circuit is shown in fig below
a .
d i
n o
.
w
w
w
The voltage at non inverting terminal is 5 V because OP AMP is ideal and
inverting terminal is at 5 V.
Thus IC = 10 - 5 = 1 mA
5k
VE = IE RE = 1m # 1.4k = 1.4V IE = IC
= 0.6 + 1.4 = 2V
Thus the feedback is negative and output voltage is V = 2V .
Sol. 33 Option (D) is correct.
The output voltage is
hfe RC
V0 = Ar Vi .- Vi
hie
Here RC = 3 W and hie = 3 kW
Thus V0 . - 150 # 3k Vi
3k
.- 150 (A cos 20t + B sin 106 t)
Since coupling capacitor is large so low frequency signal will be filtered out, and
best approximation is
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
i n
2 2
.
Hence Ix = Ibias
Sol. 36 Option (B) is correct.
c o
.
The circuit is using ideal OPAMP. The non inverting terminal of OPAMP is at
a
ground, thus inverting terminal is also at virtual ground.
d i
o
.n
w
w
w
Thus current will flow from -ive terminal (0 Volt) to -1 Volt source. Thus the
current I is
0 - (- 1)
I = = 1
100k 100k
The current through diode is
I = I 0 _eV - 1i
V
t
Now VT = 25 mV and I0 = 1 mA
I = 10-6 8e 25 # 10 - 1B = 1 5
V
Thus -3
10
or V = 0.06 V
Now V0 = I # 4k + V = 1 # 4k + 0.06 = 0.1 V
100k
Sol. 37 Option (B) is correct.
The circuit is using ideal OPAMP. The non inverting terminal of OPAMP is at
ground, thus inverting terminal is also at virtual ground.
Thus we can write
vi = -Rv
R1 + sL sR C + 1
2
2 2
or v0 =- R2
vi (R1 + sL)( sR2 C2 + 1)
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
and from this equation it may be easily seen that this is the standard form of
T.F. of low pass filter
H (s) = K
(R1 + sL)( sR2 C2 + 1)
and form this equation it may be easily seen that this is the standard form of
T.F. of low pass filter
H (s) = K
as2 + bs + b
. in
co
Sol. 38 Option (C ) is correct.
.
The current in both transistor are equal. Thus gm is decide by M1.
a
Option (C) is correct.
i
Sol. 39
Let the voltage at non inverting terminal be V1, then after applying KCL at non
inverting terminal side we have
o d
15 - V1 + V0 - V1 = V1 - (- 15)
10
.
10
n 10
w
or V
V1 = 0
3
w
If V0 swings from -15 to +15 V then V1 swings between -5 V to +5 V.
w
Sol. 40 Option (A) is correct.
For the given DC values the Thevenin equivalent circuit is as follows
IC
gm = = 1m = 1 A/V IC . IE
VT 25m 25
Vo =- gm Vp # (3k 3k )
=- 1 Vin (1.5k) Vp = Vin
25
=- 60Vin
or Am = Vo =- 60
Vin
Sol. 42 Option (C) is correct.
i n
The circuit shown in (C) is correct full wave rectifier circuit.
.
c o
a .
d i
o
.n
Sol. 43 Option (A) is correct.
w
In the transconductance amplifier it is desirable to have large input resistance
and large output resistance.
Sol. 44
w
Option (C) is correct.
w
We redraw the circuit as shown in fig.
in
IR = ID
Vi = I eV /V
.
co
or s
D T
.
or VD = VT 1n Vi
Is R
For the first condition
ia
o d
VD = 0 - Vo1 = VT 1n 2
Is R
. n
For the first condition
VD = 0 - Vo1 = VT 1n 4
w
Is R
w
Subtracting above equation
Vo1 - Vo2 = VT 1n 4 - VT 1n 2
w
Is R Is R
Vo1 - Vo2 = VT 1n 4 = VT 1n2
or
2
Sol. 47 Option (D) is correct.
We have Vthp = Vthp = 1 V
WP W
and = N = 40mA/V2
LP LN
From figure it may be easily seen that Vas for each NMOS and PMOS is 2.5 V
mA
Thus ID = K (Vas - VT ) 2 = 40 2 (2.5 - 1) 2 = 90 m A
V
Sol. 48 Option (C) is correct.
We have VZ = 7 volt, VK = 0, RZ = 10W
Circuit can be modeled as shown in fig below
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
n
Applying voltage division rule
i
(V + Vi)
.
V+ = R1 (V0 + Vi) = o
R1 + R1 2
o
1 (V + Vi)
or Vi = o
c
1 + sCR 2
or Vo
=- 1 + 2
a .
i
Vi 1 + sRC
d
V0 = 1 - sRC
o
Vi 1 + sRC
.n
Sol. 50 Option (C) is correct.
V0 = H (s) = 1 - sRC
w
Vi 1 + sRC
w
1 - jwRC
H (jw) =
1 + jwRC
=- 2 tan - 2 wRC
Minimum value, fmin = - p (at w " 3)
Maximum value, fmax = 0( at w = 0)
. in
.co
i a
d
Applying KVL we have
o
VCC - RC (IC + IB) - VCE = 0 ...(1)
n
and VCC - RB IB - VBE = 0 ...(2)
.
Substituting IC = bIB in (1) we have
w
VCC - RC (bIB + IB) - VCE = 0 ...(3)
w
Solving (2) and (3) we get
VCE = VCC - VCC - VBE
w
...(4)
1+ RB
RC (1 + b)
Now substituting values we get
VCE = 12 - 12 - 0.7
53
= 5.95 V
1+
1 + (1 + 60)
Sol. 56 Option (B) is correct.
We have b' = 110 # 60 = 66
100
Substituting b' = 66 with other values in (iv) in previous solutions
VCE = 12 - 12 - 0.7 = 5.29 V
1+ 53
1 + (1 + 66)
Thus change is = 5.29 - 59.5 # 100 =- 4.3%
5.95
Sol. 57 Option (A) is correct.
Sol. 58 Option (C) is correct.
The Zener diode is in breakdown region, thus
V+ = VZ = 6 V = Vin
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
Rf
Vo = Vin c1 +
R1 m
We know that
n
IC = 0.9 A
Power dissipation
. i
P = VCE IC = 9 # 0.9 = 8.1 W
Thus % increase in power is
c o
.
8.1 - 5.4 # 100 = 50%
a
5.4
Sol. 60 Option (B) is correct.
d i
Since the inverting terminal is at virtual ground, the current flowing through the
voltage source is
o
.n Is = Vs
10k
or
w Vs = 10 kW = R
w
in
Is
w
Sol. 61 Option (D) is correct.
The effect of current shunt feedback in an amplifier is to decrease the input
resistance and increase the output resistance as :
Rif = Ri
1 + Ab
Rof = R0 (1 + Ab)
where Ri " Input resistance without feedback
Rif " Input resistance with feedback.
Sol. 62 Option (B) is correct.
The CE configuration has high voltage gain as well as high current gain. It
performs basic function of amplifications. The CB configuration has lowest Ri
and highest Ro . It is used as last step to match a very low impedance source and
to drain a high impedance load
Thus cascade amplifier is a multistage configuration of CE-CB
Sol. 63 Option (D) is correct.
Common mode gain
ACM =- RC
2RE
And differential mode gain
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ADM =- gm RC
Thus only common mode gain depends on RE and for large value of RE it
decreases.
Sol. 64 Option (C) is correct.
IE = Is `e nV - 1j = 10 - 13 c
VBE
T
0.7 - 1m = 49 mA
1 # 26 # 10- 3
e
Sol. 65 Option (C) is correct.
The circuit is as shown below
. in
co
Writing equation for I- have
e 0 - V- = I
.
-
1M
or
i
e0 = I- (1M) + V-
a ...(1)
d
Writing equation for I+ we have
o
0 - V+
= I+
n
1M
or
. V+ = - I+ (1M) ...(2)
w
Since for ideal OPAMP V+ = V- , from (1) and (2) we have
w
e0 = I- (1M) - I + (1M)
w
= (I- - I+) (1M) = IOS (1M)
Thus if e0 has been measured, we can calculate input offset current IOS only.
Sol. 66
Option (C) is correct.
At low frequency capacitor is open circuit and voltage acr s non-inverting terminal
is zero. At high frequency capacitor act as short circuit and all input voltage
appear at non-inverting terminal. Thus, this is high pass circuit.
The frequency is given by
w = 1 = 1 = 1000 rad/sec
RC 1 # 10 # 1 # 10 - 6
3
n
or L
i
1k
.
or IL = 24.2 - 0.5 = 23.7 mA
Sol. 69 Option (D) is correct.
c o
Option (B) is correct.
.
Sol. 70
i a
The small signal model is as shown below
o d
.n
w
w
w
From the figure we have
and Zin = 2 MW
Z0 = rd RD = 20k 2k = 20 kW
11
Sol. 71 Option (A) is correct.
The circuit in DC condition is shown below
Since the FET has high input resistance, gate current can be neglect and we get
VGS =- 2 V
Since VP < VGS < 0 , FET is operating in active region
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(- 2) 2
ID = IDSS c1 - VGS m = 10 c1 -
2
(- 8) m
Now = 5.625 mA
VP
Now VDS = VDD - ID RD = 20 - 5.625 m # 2 k = 8.75 V
Sol. 72 Option (B) is correct.
The transconductance is
gm = 2
VP ID IDSS
in
Vu = 2k Vsat = 2 10 = 8 V
.
2.5k 2.5
co
when upper diode is in ON condition
.
Vu = 2k Vsat = 2 (- 10) =- 5 V
a
2.5k 4
Sol. 74 Option (B) is correct.
d i
An ideal OPAMP is an ideal voltage controlled voltage source.
Sol. 75 Option (C) is correct.
n o
.
In voltage series feed back amplifier, input impedance increases by factor (1 + Ab)
w
and output impedance decreases by the factor (1 + Ab).
w
Rif = Ri (1 + Ab)
Rof = Ro
w
(1 + Ab)
Sol. 76 Option (A) is correct.
This is a Low pass filter, because
At w = 3 V0 = 0
Vin
and at w = 0 V0 = 1
Vin
Sol. 77 Option (D) is correct.
When IC >> ICO
IC
gm = = 1mA = 0.04 = 40 mA/V
VT 25mV
b
rp = = 100 - 3 = 2.5 kW
gm 40 # 10
Sol. 78 Option (A) is correct.
The given circuit is wein bridge oscillator. The frequency of oscillation is
2pf = 1
RC
or C = 1 = 1 = 1 m
2pRf 2p # 103 # 103 2p
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n
R1 R1
or 2V- - Vo = Vs
. i ...(1)
o
Applying KCL at non-inverting terminal
. c
V+ V - Vo
+ IL + + =0
a
R2 R2
i
or 2V+ - Vo + IL R2 = 0 ...(2)
o d
Since V- = V+ , from (1) and (2) we have
Vs + IL R2 = 0
or
.n IL =- Vs
w
R2
Sol. 80 Option (D) is correct.
w
If IZ is negligible the load current is
w
12 - Vz = I
L
R
as per given condition
100 mA # 12 - VZ # 500 mA
R
At IL = 100 mA 12 - 5 = 100 mA VZ = 5 V
R
or R = 70W
At IL = 500 mA 12 - 5 = 500 mA VZ = 5 V
R
or R = 14 W
Thus taking minimum we get
R = 14 W
Sol. 81 Option (B) is correct.
Sol. 82 Option (C) is correct.
The Thevenin equivalent is shown below
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VT = R1 V = 1
#5 = 1 V
R1 + R2 C 4+1
Since b is large is large, IC . IE , IB . 0 and
IE = VT - VBE = 1 - 0.7 = 3 mA
RE 300
Now VCE = 5 - 2.2kIC - 300IE
= 5 - 2.2k # 1m - 300 # 1m = 2.5 V
in
Sol. 83 Option (B) is correct.
.
For the different combinations the table is as follows
co
CE CE CC CB
.
Ai High High Unity
Av High
i a Unity High
d
Ri Medium High Low
Ro Medium
n o Low High
w
doubler.
w
Sol. 85 Option (B) is correct.
If the input is sinusoidal signal of 8 V (peak to peak) then
Vi = 4 sin wt
The output of comparator will be high when input is higher than Vref = 2 V and
will be low when input is lower than Vref = 2 V. Thus the waveform for input is
shown below
From fig, first crossover is at wt1 and second crossover is at wt2 where
4 sin wt1 = 2V
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c
.
internal capacitance that are diffusion capacitance and transition capacitance.
Sol. 88 Option (A) is correct.
i a
d
We have Ri = 1kW, b = 0.2, A = 50
o
Ri
Thus, Rif = = 1 kW
.n
(1 + Ab) 11
Sol. 89 Option (A) is correct.
w
The DC equivalent circuit is shown as below. This is fixed bias circuit operating
w
in active region.
w
In first case VCC - IC1 R2 - VCE1 = 0
or 6 - 1.5mR2 - 3 = 0
or R2 = 2kW
I
IB1 = C1 = 1.5m = 0.01 mA
b1 150
In second case IB2 will we equal to IB1 as there is no in R1.
Thus IC2 = b2 IB2 = 200 # 0.01 = 2 mA
VCE2 = VCC - IC2 R2 = 6 - 2m # 2 kW = 2 V
Sol. 90 Option (A) is correct.
The given circuit is a R - C phase shift oscillator and frequency of its oscillation
is
f = 1
2p 6 RC
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co
V+ = 8 (3) = 8 kW
1+8 3
.
8
V+ = V- = V
a
3
V- - 2 + V- - Vo = 0
d i
Now applying KCL at inverting terminal we get
1 5
n o
.
or Vo = 6V- - 10
w
= 6 # 8 - 10 = 6 V
3
Sol. 93
w
Option (C) is correct.
w
The equivalent circuit of 3 cascade stage is as shown in fig.
V2 = 1k 50V1 = 40V1
1k + 0.25k
Similarly V3 = 1k 50V2 = 40V2
1k + 0.25k
or V3 = 40 # 40V1
Vo = 50V3 = 50 # 40 # 40V1
or AV = Vo = 50 # 40 # 40 = 8000
V1
or 20 log AV = 20 log 8000 = 98 dB
Sol. 94 Option (D) is correct.
If a constant current is made to flow in a capacitor, the output voltage is integration
of input current and that is sawtooth waveform as below :
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t
VC = 1 # idt
C 0
The time period of wave form is
T = 1 = 1 = 2 m sec
f 500
20 # 10
-3
1
6 #
Thus 3= idt
2 # 10 0
or i (2 # 10 - 3 - 0) = 6 # 10 - 6
or i = 3 mA
Thus the charging require 3 mA current source for 2 msec.
Sol. 95 Option (C) is correct.
In voltage-amplifier or voltage-series amplifier, the Ri increase and Ro decrease
because
Rif = Ri (1 + Ab)
Rof = Ro
n
(1 + Ab)
Sol. 96 Option (B) is correct.
. i
Let x be the gain and it is 20 db, therefore
c o
.
20 log x = 20
i a
or x = 10
d
Since Gain band width product is 106 Hz, thus
o
So, bandwidth is
.n
6 6
BW = 10 = 10 = 105 Hz = 100 kHz
Gain 10
w
Sol. 97 Option (A) is correct.
In multistage amplifier bandwidth decrease and overall gain increase. From
w
bandwidth point of view only options (A) may be correct because lower cutoff
w
frequency must be increases and higher must be decreases. From following
calculation we have
We have fL = 20 Hz and fH = 1 kHz
For n stage amplifier the lower cutoff frequency is
fL 20
f = Ln 1
= = 39.2 . 40 Hz
1
2n - 1 23 - 1
The higher cutoff frequency is
1
fHn = fH 2 2 - 1 = 0.5 kHz
Sol. 98 Option (A) is correct.
As per Barkhousen criterion for sustained oscillations Ab $ 1 and phase shift
must be or 2pn .
V (f)
Now from circuit A= O = 1 + R2
Vf (f) R1
V (f )
b (f) = 1 +0 = f
6 VO (f)
Thus from above equation for sustained oscillation
6 = 1 + R2
R1
or R2 = 5R1
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or Vm = SR = -6 1
AV V2pf 10 # 100 # 2p # 20 # 103
or VM = 79.5 mV
Sol. 100 Option (A) is correct.
The circuit is shown as below
. in
. co
i a
d
I = IZ + IL
o
For satisfactory operations
. n
Vin - V0 > IZ + IL [IZ + IL = I]
R
When Vin = 30 V,
w
w
30 - 10 $ (10 + 1) mA
R
or
w 20
R
$ 11 mA
or
when Vin = 50 V
R # 1818 W
50 - 10 $ (10 + 1) mA
R
40 $ 11 # 10 - 3
R
or R # 3636W Thus R # 1818W
Sol. 101 Option (D) is correct.
We have
IDSS = 10 mA and VP =- 5 V
Now VG = 0
and VS = ID RS = 1 # 2.5W = 2.5 V
Thus VGS = VG - VS = 0 - 2.5 =- 2.5 V
Now gm = 2IDSS 81 - ` - 2.5 jB = 2 mS
VP -5
AV = V0 =- gm RD
Vi
So, =- 2ms # 3k =- 6
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i n
Sol. 105 Option (B) is correct.
.
If fT is the frequency at which the short circuit common emitter gain attains unity
o
magnitude then
. c
gm 38 # 10 - 3
fT = = = 1.47 # 1010 Hz
2p (Cm + Cp)
a
2p # (10 - 14 + 4 # 10 - 13)
i
If fB is bandwidth then we have
d
f 10
fB = T = 1.47 # 10 = 1.64 # 108 Hz
o
b 90
.n
Sol. 106 Option (C) is correct.
w
If we neglect current through RB then it can be open circuit as shown in fig.
w
w
Maximum power will dissipate in Zener diode when current through it is maximum
and it will occur at Vin = 30 V
I = Vin - Vo = 30 - 10 = 1 A
20 20
I IC + IZ = bIB + IZ Since IC = bIB
= bIZ + IZ = (b + 1) IZ since IB = IZ
or IZ = I = 1 = 0.01 A
b+1 99 + 1
Power dissipated in zener diode is
PZ = VZ IZ = 9.5 # 0.01 = 95 mW
IC = bIZ = 99 # 0.1 = 0.99 A
VCE = Vo = 10 V
Power dissipated in transistor is
PT = VC IC = 10 # 0.99 = 9.9 W
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. in
co
Let V- be the voltage of inverting terminal, since non inverting terminal a at
.
ground, the output voltage is
a
Vo = AOL V- ...(1)
d i
Now applying KCL at inverting terminal we have
o
V- - Vs + V- - V0 = 0 ...(2)
R1 R2
.
From (1) and (2) we have
n
w
VO = A = - R2
CL
Vs R - R2 + R1
w
ROL
Substituting the values we have
w ACL = - 10k
10 k 1 k
=- 1000 . - 11
89
1k - +
100k
Sol. 109 Option (A) is correct.
The first OPAMP stage is the differentiator and second OPAMP stage is integrator.
Thus if input is cosine term, output will be also cosine term. Only option (A) is
cosine term. Other are sine term. However we can calculate as follows. The circuit
is shown in fig
i n
Since source resistance of the current source is infinite REE = 3 , common mode
gain AC = 0
.
Sol. 112 Option (D) is correct.
c o
.
In positive feed back it is working as OP-AMP in saturation region, and the input
a
i
applied voltage is +ve.
d
So, V0 =+ Vsat = 15 V
o
Sol. 113 Option (A) is correct.
.n
At high frequency
gm
w
Ai =- '
gbc + jw (C)
w
or, Ai \ 1
Capacitance
and
w Ai a 1
frequency
Thus due to the transistor capacitance current gain of a bipolar transistor
drops.
Sol. 114 Option (C) is correct.
As OP-AMP is ideal, the inverting terminal at virtual ground due to ground at
non-inverting terminal. Applying KCL at inverting terminal
sC (v1 sin wt - 0) + sC (V2 sin wt - 0) + sC (Vo - 0) = 0
or Vo =- (V1 + V2) sin wt
Sol. 115 Option (D) is correct.
There is R - C , series connection in parallel with parallel R - C combination.
So, it is a wein bridge oscillator because two resistors R1 and R2 is also in parallel
with them.
Sol. 116 Option (A) is correct.
The given circuit is a differentiator, so the output of triangular wave will be
square wave.
Sol. 117 Option (B) is correct.
In sampling and hold circuit the unity gain non-inverting amplifier is used.
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VT = R1 V = 5
# 15 = 5 V
R1 + R2 C 10 + 5
Since b is large is large, IC . IE , IB . 0 and
IE = VT - VBE
RE
5 - 0.7 = 4.3
in
= = 10 mA
0.430kW 0.430KW
.
co
Sol. 119 Option (C) is correct.
The output voltage will be input offset voltage multiplied by open by open loop
.
gain. Thus
i a
So V0 = 5mV # 10, 000 = 50 V
d
But V0 = ! 15 V in saturation condition
o
So, it can never be exceeds !15 V
. n
So, V0 = ! Vset = ! 15V
w
Sol. 120 Option (A) is correct.
Option (A) is correct.
w
Sol. 121
w
Option (A) is correct.
By drawing small signal equivalent circuit
by applying KCL at E2
Vp
gm1 Vp - 2
= gm2 Vp
1
rp2
2
at C2 i 0 =- gm2 Vp 2
gm1 Vp =- i 0 :1 + 1 D
1
gm2 rp 2
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gm2 rp
2
= b >> 1
so gm1 Vp1
=- i 0
i0 =- gm1
Vp 1
i0 = gm1 a Vp = Vi
Vi 1
. i
Ri = Input impedance
n
o
So, R in = 1 # 103 (1 + 0.99 # 100) = 100 kW
c
Similarly output impedance is given by
ROUT = R0
a . R 0 = output impedance
i
(1 + bv Av)
d
Thus ROUT = 100 = 1W
(1 + 0.99 # 100)
o
.n
Sol. 125 Option (B) is correct.
Regulation = Vno - load - Vfuel - load
w
Vfull - load
= 30 - 25 # 100 = 20%
w 25
w
Output resistance = 25 = 25 W
1
Sol. 126
Option (D) is correct.
This is a voltage shunt feedback as the feedback samples a portion of output
voltage and convert it to current (shunt).
Sol. 127 Option (A) is correct.
In a differential amplifier CMRR is given by
(1 + b) IQ R 0
CMRR = 1 ;1 + E
2 VT b
So where R 0 is the emitter resistance. So CMRR can be improved by increasing
emitter resistance.
Sol. 128 Option (C) is correct.
We know that rise time (tr ) is
tr = 0.35
fH
where fH is upper 3 dB frequency. Thus we can obtain upper 3 dB frequency it
rise time is known.
Sol. 129 Option (D) is correct.
In a BJT differential amplifier for a linear response Vid < VT .
GATE SOLVED PAPER - EC ANALOG ELECTRONIC
in
Sol. 131 Option (A) is correct.
.
Sol. 132 Option (D) is correct.
co
Comparator will give an output either equal to + Vsupply or - Vsupply . So output is
.
a square wave.
a
Sol. 133 Option (C) is correct.
i
In series voltage regulator the pass transistor is in common collector
d
o
configuration having voltage gain close to unity.
n
Sol. 134 Option (D) is correct.
.
In bridge rectifier we do not need central tap transformer, so its less expensive
w
and smaller in size and its PIV (Peak inverse voltage) is also greater than the two
w
diode circuit, so it is also suitable for higher voltage application.
w
Sol. 135 Option (C) is correct.
In the circuit we have
and
V2 = IS # RD
2
V1 = IS # RD
V2 = 1
V1 2
V1 = 2V2
Sol. 136 Option (C) is correct.
Sol. 137 Option (C) is correct.
The equivalent circuit of given amplifier circuit (when CE is connected, RE is
short-circuited)
Input impedance Ri = RB || r p
Voltage gain AV = gm RC
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n
common emitter stage is followed by common base stage.
Sol. 139 Option (C) is correct.
. i
o
We know that collect-emitter break down voltage is less than compare to collector
. c
base breakdown voltage.
a
BVCEO < BVCBO
i
both avalanche and zener break down. Voltage are higher than BVCEO .So BVCEO
d
limits the power supply.
Sol. 140 Option (C) is correct.
o
.n
w
w
w
If we assume consider the diode in reverse bias then Vn should be greater than VP .
VP < Vn
by calculating
VP = 10 # 4 = 5 Volt
4+4
Vn = 2 # 1 = 2 Volt
here VP > Vn (so diode cannot be in reverse bias mode).
so current Ib = 0 - 3 + 10 - 3
4 4
Ib = 10 - 6 = 1 amp
4
Sol. 141 Option (D) is correct.
Applying node equation at terminal (2) and (3) of OP -amp
in
Va - Q Va - V0
+ =0
.
5 10
co
2Va - 4 + Va - V0 = 0
.
V0 = 3Va - 4
a
Va - V0 + Va - 0 = 0
i
100 10
Va - V0 + 10Va = 0
o
11Va = V0 d
. n
Va = V0
11
So
w V0 = 3V0 - 4
w
11
w
8V0 =- 4
11
V0 =- 5.5 Volts
Sol. 142 Option (B) is correct.
Circuit with diode forward resistance looks
n
V0 = kVi
after connecting feedback impedance Z
. i
c o
a .
d i
o
.n
given input impedance is very large, so after connecting Z we have
w
Ii = Vi - V0 V0 = kVi
Z
w Ii = Vi - kVi
Z
w
input impedance Zin = Vi = Z
Ii (1 - k)
Sol. 146 Option (A) is correct.
Sol. 147 Option (A) is correct.
For the circuit, In balanced condition It will oscillated at a frequency
w= 1 = 1 = 105 rad/ sec
LC 10 # 10-3 # .01 # 10-6
In this condition
R1 = R 3
R2 R4
5 =R
100 1
R = 20 kW = 2 # 10 4 W
Sol. 148 Option (C) is correct.
V0 kept constant at V0 = 6 volt
so current in 50 W resistor
I = 9-6
50 W
I = 60 m amp
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. in
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i a
o d
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w
w
w