MODEL ANSWER

INTERNATIONAL ISLAMIC UNIVERSITY MALAYSIA

MID TERM EXAMINATION
SEMESTER II, 2013/2014 SESSION
KULLIYYAH OF ENGINEERING

Program : ENGINEERING Level of Study : UG1

Time : 10.00 am 12.00 pm Date : 12/04/2014
Duration : 2 hours Course Code : ECE 1312
Section(s) : 1-9
Course Title : Electronics

This Question Paper Consists of Nine (9) Printed Pages Including Cover Page With Five (5)
Questions.

INSTRUCTION(S) TO CANDIDATES
DO NOT O PEN UNTIL YOU ARE ASKED TO DO SO
Total mark of this examination is 50.
This examination is worth 30% of the total assessment
Answer all 5 (Five) questions.

Any form of cheating or attempt to cheat is a serious offence which may lead to
dismissal.
Question 1(10 marks)

a) Define active and passive components. Give two examples for each of the active and
passive components. (3 marks)

Active components are components that require power supply in order to operate
and passive components are components that do not require power supply to
operate.

Eg: passive components - capacitor and resistor.

Eg: active components transistors such as BJT and FET

b) One of the important semiconductor material properties is the bandgap energy.

i. What is bandgap energy?

Bandgap energy is the minimum energy required for an electron to jump

from valence band into conduction band

ii. Semiconductor A has a bandgap of 1.1eV and semiconductor B has a bandgap

of 2.3eV. Which semiconductor material will have its current less affected
with temperature (is it semiconductor A or B)? Explain why.

Semiconductor B because due to its bigger bandgap energy, it will require

larger temperaturefor the electrons to jump to the valence band and
becomes free electrons. Then, its current will be less affected with
temperature.

(4 marks)
c) Calculate the majority and minority carrier concentrations in silicon at T = 300 K
when Na = 1017 cm-3 Assume, ni= 1.51010 cm-3 for Silicon.

nopo = ni2

since Na>>ni , po = majority carriers = Na = 1017 cm-3

so, no = ni2 / po = 2.25 x 103 cm-3are the minority carriers

(3 marks)
Question 2 (10 marks)

a) Silicon with an intrinsic carrier concentration of 1.5 1010 /cm3 is doped with
5 1017 atoms/cm3 of an element X. After doping, silicon becomes an n-type
material.
(5 marks)
i. Give an example of element X.

ii. Calculate the electron and hole concentrations in the material at T= 300K.

Answers:

i. Element X = Arsenic or Phosphorus

ii. nopo = ni2

sinceNd>>ni , no = 5 x 1017 cm-3

so, po = ni2 / no = 4.5 x 102 cm-3

b) Explain what happens to the carriers when p-type and n-type materials are put
next to each other, as shown in the Figure 2(b). Include the mechanisms involved
and the direction of the flow of electrons and holes. (5 marks)

p n

Figure 2(b)

After joining p-type and n-type semiconductors, electrons from the n region diffuse into the
p region. As electrons diffuse, they leave positively charged ions in the n region. Likewise,
holes from the p-type diffuse into the n-type region, leaving negatively charged ions in the
p region. This creates a charge separation layer known as depletion region that sets up an
electric field. This electric field will create a force that will stop the diffusion of carriers
Question 3 (10 marks)

a) Find the diode voltage VD and the battery voltage V, so that the current I= 0.4 mA for the
circuit in Figure 3 (a). Assume that the diode cut-in voltage V = 0.65 V. Also, determine
the power dissipated by the diode. (5 marks)

Figure 3(a)

VD= V = 0.65 V

KVL: 4.7 I + 0.65 + V 5 = 0

V = 5 0.65 4.7 (0.4) = 2.47 V

Power dissipated: I x VD =0.26 mW

 b) Determine the quiescent current, IDQ and the time varying current, id for circuit as shown
in Figure 3(b). Given that the circuit and diode parameters are VPS = 20V, R = 20k,
V = 0.65 V, and vi = 0.2 sin t. (5 marks)

Figure 3 (b)

DC Analysis AC Analysis

V + IDQR 20 = 0 idrd + id R - 0.2 sin t = 0

IDQ = (20 0.65) / 20 = 0.9675 mA id( 20026.87) = 0.2 sin t

Sord = VT / ID = 26.87 id = 10 sin tA

Question 4 (10 marks)

a) Plot theoutput voltage, vofor the circuit in Figure 4(a) for each V value. The input is
shown in the figure.

Assume

i. V =0 V

ii. V =0.65V

(5 marks)

Figure 4(a)

i. V =0 V ii. V =0.65 V

VO VO

20 19.35

5
5
t
t
b) Calculate the common-emitter current gain , collector current, IC and emitter current, IE
for a common-base current gain = 0.95 and a base current IB = 35 A. Assume the
transistor is biased in the forward active mode. (5 marks)

= / (1 ) = 19

IC = IB= 0.665 mA

IE = IC + IB = 0.7 mA
Question 5 (10 marks)

For the transistor circuit shown in Figure 5, assume VBE(on) = 0.7V and = 100.

Figure 5

a) Find the values of IBQ, ICQ, IEQ and VCEQ. (5 marks)

b) Deduce the output load line equation for the circuit and sketch the load line by
showing theoperating point (Q-point) of this transistor circuit.

(5 marks)

a) KVL at BE Loop KVL at CE Loop

220 IB + 0.7 4 = 0 2 IC + VCE 10 = 0

IB= 0.015 mA VCE = 10 3 = 7 V

IC = IB =1.5 mA

IE = IC + IB =1.515 mA

b) The output line equation is

deduced from the KVL equation at
CE loop

2 IC + VCE 10 = 0

IC = - VCE + 10
2