Electronic Circuits

(ECE-106) (Basic Semiconductor Concepts)

Ref: Robert L. Boylestad and Louis Nashelsky, Electronic Devices and Circuit Theory, 11th Ed, Pearson Education and
Microelectronic Circuits, Sedra and Smith, 6th Edition, Oxford University press.

Dr. Ramesh Vaddi

Assistant Professor, Electronics And Communication Engineering, DSPM
International Institute Of Information Technology - Naya Raipur (A Joint Initiative
Of Govt. Of Chhattisgarh And NTPC), Chattisgarh-493661, India
Email: Vaddiramesh2k9@gmail.Com, Ramesh@iiitnr.Edu.In
webpage: https://sites.google.com/site/nsicspiotiiitnr/
 Contents

Basic properties of semiconductors.

Intrinsic and Doped Semiconductors
Carrier Conduction mechanisms
 Introduction

To become a proficient circuit designer, one has to go beyond the black-box or

system-level abstraction and learn about the basic devices from which electronic
circuits are assembled : diodes (this section), and transistors (next two sections).
These solid-state devices are made using semiconductor materials,
predominantly silicon.
In This, we begin with a study of the crystal structure of semiconductors and
look at the two types of charge carriers available for current conduction:
electrons and holes.
The most significant property of semiconductors is that their conductivity can be
varied over a very wide range through the introduction of controlled amounts of
impurity atoms into the semiconductor crystal in a process called doping.
 Semiconductors

Semiconductors are a group of materials having electrical conductivities

intermediate between metals and insulators.
It is significant that the conductivity of these materials can be varied over orders
of magnitude by changes in temperature, optical excitation, and impurity
content.
This variability of electrical properties makes the semiconductor materials
natural choices for electronic device investigations.
 Semiconductors

Two kinds of semiconductors:

-single-element semiconductors, such as germanium and silicon (in group IV
in the periodic table),
- compound semiconductors, such as gallium-arsenide, formed by combining
elements from groups III V, II-VI etc .
The elemental semiconductor Ge was widely used in the early days of
semiconductor development for transistors and diodes.
Silicon is now used for the majority of rectifiers, transistors, and modern
integrated circuits.
 Semiconductors

Compound semiconductors are widely

Table 1-1. Common semiconductor materials: (a) the
used in high-speed devices and devices portion of the periodic table where semiconductors
requiring the emission or absorption occur; (b) elemental and compound semiconductors.
of light.
The two-element (binary) III-V
compounds such as GaN, GaP, and
GaAs are common in light-emitting
diodes (LEDs).
An important microwave device, the
Gunn diode, is usually made of GaAs
or InP.
Semiconductor lasers are made using
GaAs, AlGaAs, etc.
 Semiconductors

Figure 1-12 Steps involved in manufacturing Si wafers: (a) A 300 mm Si cylindrical ingot, with a notch on one
side, being loaded into a wire saw to produce Si wafers; (b) a technician holding a cassette of 300 mm wafers.
(Photographs courtesy of MEMC Electronics Intl.) (c) Molecular beam epitaxy facility in the Microelectronics
Research Center at the University of Texas at Austin.
 Energy bands

Every solid has its own characteristic

energy band structure . This variation in
band structure is responsible for the wide
range of electrical characteristics observed
in various materials.
For electrons to experience acceleration in
an applied electric field, they must be able
to move into new energy states.
This implies there must be empty states
(allowed energy states which are not
already occupied by electrons) available to
the electrons. Insulator Semiconductor Metal
 Energy bands

For example, if relatively few electrons

reside in an otherwise empty band, ample
unoccupied states are available into which
the electrons can move
On the other hand, the silicon band
structure is such that the valence band is
completely filled with electrons at 0 K and
the conduction band is empty.
There can be no charge transport within
the valence band, since no empty states are
available into which electrons can move.
There are no electrons in the conduction Insulator Semiconductor Metal
band, so no charge transport can take place
there either. Thus silicon has a high
resistivity typical of insulators at 0 K .
 Energy bands

Semiconductor materials at 0 K have

basically the same structure as insulatorsa
filled valence band separated from an empty
conduction band by a band gap containing
no allowed energy states (Fig. ).
The difference lies in the size of the band
gap Eg, which is much smaller in
semiconductors than in insulators.
For example, the semiconductor Si has a
band gap of about 1.1 eV compared with 5
eV for diamond.
The relatively small band gaps of Insulator Semiconductor Metal
semiconductors allow for excitation of
electrons from the lower (valence) band to
the upper (conduction) band by reasonable
amounts of thermal or optical energy.
 Energy bands
At room temperature a semiconductor with a 1-
eV band gap will have a significant number of
electrons excited thermally across the energy
gap into the conduction band, whereas an
insulator with Eg = 10 eV will have a negligible
number of such excitations.
Thus an important difference between
semiconductors and insulators is that the
number of electrons available for conduction can
be increased greatly in semiconductors by
thermal or optical energy.
In metals the bands either overlap or are only
partially filled. Thus electrons and empty energy
states are intermixed within the bands so that Insulator Semiconductor Metal
electrons can move freely under the influence of
an electric field.
 Intrinsic Semiconductors

Ge and Si atoms have four valence

electrons.
At sufficiently low temperatures,
absolute zero (0 K), all the covalent
bonds are intact and no electrons are
available to conduct electric current.
Thus, at such low temperatures, the
intrinsic silicon crystal behaves as an
insulator.
At higher temperatures electron-hole
pairs are generated as valence band
electrons are excited thermally across
the band gap to the conduction band.
 Intrinsic Semiconductors

At room temperature, sufficient thermal energy exists to break some of the

covalent bonds, a process known as thermal generation.
when a covalent bond is broken, an electron is freed. The free electron can
wander away from its parent atom, and it becomes available to conduct electric
current if an electric field is applied to the crystal.
As the electron leaves its parent atom, it leaves behind a net positive charge, equal
to the magnitude of the electron charge.
Thus, an electron from a neighboring atom may be attracted to this positive
charge, and leaves its parent atom.
This action fills up the hole that existed in the ionized atom but creates a new
hole in the other atom.
 Intrinsic Semiconductors

This process may repeat itself, with the result that we effectively have a positively
charged carrier, or hole, moving through the silicon crystal structure and being
available to conduct electric current.
The charge of a hole is equal in magnitude to the charge of an electron.
We can thus see that as temperature increases, more covalent bonds are broken
and electronhole pairs are generated.
The increase in the numbers of free electrons and holes results in an increase in
the conductivity of silicon (opposite phenomenon in conductors).
 Intrinsic Semiconductors

This process may repeat itself, with the result that we effectively have a positively
charged carrier, or hole, moving through the silicon crystal structure and being
available to conduct electric current.
The charge of a hole is equal in magnitude to the charge of an electron.
We can thus see that as temperature increases, more covalent bonds are broken
and electronhole pairs are generated.
The increase in the numbers of free electrons and holes results in an increase in
the conductivity of silicon (opposite phenomenon in conductors).
Thermal generation results in free electrons and holes in equal numbers and
hence equal concentrations, where concentration refers to the number of charge
carriers per unit volume (cm3).
 Intrinsic Semiconductors

The free electrons and holes move randomly through the silicon crystal structure,
and in the process some electrons may fill some of the holes.
This process, called recombination, results in the disappearance of free
electrons and holes.
The recombination rate is proportional to the number of free electrons and holes,
which in turn is determined by the thermal generation rate.
The latter is a strong function of temperature.
 Intrinsic Semiconductors

In thermal equilibrium, the recombination rate is equal to the generation rate,

and one can conclude that the concentration of free electrons n is equal to the
concentration of holes p,
Where ni denotes the number of free electrons and holes in a unit volume (cm3) of
intrinsic silicon at a given temperature. Results from semiconductor physics gives
ni as

where B is a material-dependent parameter that is 7.3x1015cm3 K3 2 for

silicon; Eg, a parameter known as the bandgap energy, is 1.12 electron volt (eV)
for silicon; and k is Boltzmanns constant (8.62 x 10-5 eV/K).
It is interesting to know that the band gap energy Eg is the minimum energy
required to break a covalent bond and thus generate an electron hole pair.
 Intrinsic Semiconductors

The product of the hole and free-electron concentration as n p= ni2

Calculate the value of ni for silicon at room temperature ( K).
 Doped Semiconductors

The intrinsic silicon crystal described has equal concentrations of free electrons
and holes, generated by thermal generation.
These concentrations are far too small for silicon to conduct appreciable current
at room temperature.
Also, the carrier concentrations and hence the conductivity are strong functions of
temperature, not a desirable property in an electronic device.
Fortunately, a method was developed to change the carrier concentration in a
semiconductor crystal substantially and in a precisely controlled manner.
This process is known as doping, and the resulting silicon is referred to as doped
silicon.
 Doped Semiconductors

By doping, a crystal can be altered so that it has a predominance of either

electrons or holes.
There are two types of doped semiconductors, n-type (mostly electrons) and
p-type (mostly holes).
When a crystal is doped such that the equilibrium carrier concentrations are
different from the intrinsic carrier concentration ni, the material is said to be
extrinsic.
When impurities are introduced into an otherwise perfect crystal, additional
levels are created in the energy band structure, usually within the band gap.
 Doped Semiconductors
For example, an impurity from column V of the
periodic table (P, As, and Sb) introduces an energy
level very near the conduction band in Ge or Si.
This level is filled with electrons at 0 K, and very
little thermal energy is required to excite these
electrons to the conduction band (Fig. ).
Thus at about 50-100 K virtually all of the electrons
in the impurity level are "donated" to the
conduction band.
Such an impurity level is called a donor level, and
the column V impurities in Ge or Si are called
donor impurities.
Thus semiconductors doped with a significant
number of donor atoms will have n0 >> (ni, p0) at
room temperature. This is n-type material.
 Doped Semiconductors

Atoms from column III (B, Al, Ga, and In) introduce
impurity levels in Ge or Si near the valence band.
These levels are empty of electrons at 0 K (Fig. ). At
low temperatures, enough thermal energy is
available to excite electrons from the valence band
into the impurity level, leaving behind holes in the
valence band.
Since this type of impurity level "accepts" electrons
from the valence band, it is called an acceptor level,
and the column III impurities are acceptor
impurities in Ge and Si.
Doping with acceptor impurities can create a
semiconductor with a hole concentration much
greater than the conduction band electron
concentration (this type is p-type material).
 Doped Semiconductors

Figure. A silicon crystal doped by a pentavalent element. Figure. A silicon crystal doped with a trivalent impurity.
Each dopant atom donates a free electron and is thus Each dopant atom gives rise to a hole, and the
called a donor. The doped semiconductor becomes n type. semiconductor becomes p type.
 Doped Semiconductors

If the concentration of donor atoms is ND, where ND is usually much greater than ni, the
concentration of free electrons in the n-type silicon will be

subscript n denotes n-type silicon. Thus nn is determined by the doping concentration and not by
temperature.
This is not the case, however, for the hole concentration. All the holes in the n-type silicon are
those generated by thermal ionization.
Their concentration can be found by noting that the relationship in Eq. (1) applies equally well for
doped silicon, provided thermal equilibrium is achieved. Thus for n-type silicon

Substituting for nn, we obtain for pn,

Finally, we note that in n-type silicon the concentration of free electrons will be much larger than
that of holes. Hence electrons are said to be the majority charge carriers and holes the minority
charge carriers in n-type silicon.
 Doped Semiconductors

If the acceptor doping concentration is NA, where NA >>ni the hole concentration becomes

where the subscript p denotes p-type silicon. Thus, here the majority carriers are holes and their
concentration is determined by NA. The concentration of minority electrons can be found by using
the relationship

and substituting pp for from Eq.

The concentration of the minority electrons will have the same temperature dependence as that of
ni2.
 Doped Semiconductors

It should be emphasized that a piece of n-type or p-type silicon is electrically neutral; the charge of
the majority free carriers (electrons in the n-type and holes in the p-type silicon) are neutralized
by the bound charges associated with the impurity atoms.
Eg 1: Consider an n-type silicon for which the dopant concentration ND = 1017 cm3.
Find the electron and hole concentrations at T = 300 K.
Eg 2: For a silicon crystal doped with boron, what must be NA if at T = 300 K the
electron concentration drops below the intrinsic level by a factor of 106?
 Current Flow in Semiconductors

There are two different mechanisms for the

movement of charge carriers and hence for current
flow in semiconductors: drift and diffusion.
Drift Current:
When an electrical field E is established in a
semiconductor crystal, holes are accelerated in the
direction of E, and free electrons are accelerated in
the direction opposite to that of E. The holes
acquire a velocity vp-drift given by,
vp-drift =pE

Where p is a constant called the hole mobility: It represents the degree of ease by which holes move through
the silicon crystal in response to the electrical field E. Since velocity has the units of centimeters per second and
E has the units of volts per centimeter, we see from Eq. that the mobility p must have the units of centimeters
squared per volt-second (cm2/V.s). For intrinsic silicon p =480 cm2/V.s.
 Drift Current

The free electrons acquire a drift velocity vn-drift given by,

vn-drift = -nE
where the result is negative because the electrons move in the direction opposite to E. Here
nis the electron mobility, which for intrinsic silicon is about 1350 cm2/V.s.
Note that n is about 2.5 times p, signifying that electrons move with much greater ease
through the silicon crystal than do holes.
Let the concentration of holes be p and that of free electrons be n.
We wish to calculate the current component due to the flow of holes.
Consider a plane perpendicular to the x direction. In one second, the hole charge that crosses
that plane will be (Aqpvp-drift) coulombs,
where A is the cross-sectional area of the silicon bar and q is the magnitude of
electron charge.
Then the hole component of the drift current flowing through the bar,
Ip = Aqpvp-drift
 Drift Current

Substituting for vp-drift from Eq. (1), we obtain

Ip = A q p pE
We are usually interested in the current density Jp, which is the current per unit cross
sectional area, Jp= q p pE

The current component due to the drift of free electrons can be found in a similar manner.
Note, however, that electrons drifting from right to left result in a current component from left to
right. This is because of the convention of taking the direction of current flow as the direction of
flow of positive charge and opposite to the direction of flow of negative charge. Thus,
In = A q n vn-drift
Substituting for vn-drift from Eq. , we obtain In and Jn as
In = A q n nE
Jn= q n nE
 Drift Current

The total drift current density can now be found by summing Jp and Jn,
J= Jp + Jn = q p pE + q n nE = q (pp+n n) E
This relationship can be written as
J = E or J= E/
where the conductivity and resistivity are given by
= q (pp+n n) and
= 1/ = 1/q (p p+n n)
Eg 1: Find the resistivity of (a) intrinsic silicon and (b) p-type silicon with NA= 1016/cm3. Use ,
Ni= 1010/cm3 and and assume that for intrinsic silicon n= 1350 cm2/V.s and p= 480
cm2/V.s , and for the doped silicon n= 1110 cm2/V.s and p= 400 cm2/V.s
(Note that doping results in reduced carrier mobilities).
Eg 2: A uniform bar of n-type silicon of 2 m length has a voltage of 1 V applied across it. If ND=
1016/cm3 and n= 1350 cm2/V.s , find (a) the electron drift velocity, (b) the time it takes an
electron to cross the 2-m length, (c) the drift-current density, and (d) the drift current in the
case the silicon bar has a cross sectional area of0.25 m2 .
 Diffusion Current

Carrier diffusion occurs when the density of

charge carriers in a piece of semiconductor is
not uniform.
Holes/electrons will diffuse from the region of
high concentration to the region of low
concentration.
The diffusion of charge carriers gives rise to a
net flow of charge, or diffusion current.

Figure. A bar of silicon (a) into which holes are injected, thus creating the hole
concentration profile along the x axis, shown in (b). The holes diffuse in the positive
direction of x and give rise to a hole diffusion current in the same direction.
Note that we are not showing the circuit to which the silicon bar is connected.
 Diffusion Current

The magnitude of the current at any point is

proportional to the slope of the concentration
profile, or the concentration gradient, at that
point,.
where Jp is the hole-current density (A/cm2), q is
the magnitude of electron charge, Dp is a constant
called the diffusion constant or diffusivity of
holes; and p(x) is the hole concentration at point
x. Note that the gradient is negative, resulting in a
positive current in the x direction, as should be
expected.
 Diffusion Current

In the case of electron diffusion resulting from an

electron concentration gradient, a similar
relationship applies, giving the electron-current
density.
where is the diffusion constant or diffusivity of
electrons.
For holes and electrons diffusing in intrinsic
silicon, typical values for the diffusion constants
are Dp = 12 cm2/s and Dn = 35 cm2/s.
 Diffusion Current

Eg 1: Consider a bar of silicon in which a hole concentration profile described by

is established. Find the hole-current density at x = 0. Let p0= 1016/cm3 and Lp=1m. If the cross-
sectional area of the bar is 100 m2, find the current Ip

Eg 2: The linear electron-concentration profile shown in Fig. has been

established in a piece of silicon. If n0= 1017/cm3 and W = 1 m, find
the electron-current density in micro amperes per micron squared
(A/m2). If a diffusion current of 1 mA is required what must the
cross-sectional area (in a direction perpendicular to the page) be?
 Relationship between D and

A simple but powerful relationship ties the diffusion constant with the mobility,

where VT=kT/q. The parameter VT is known as the thermal voltage. At room temperature,
T=300K and VT =25.9mV.
The relationship is known as the Einstein relationship.