EEE422

Power Electronics Laboratory

Lab Report
Section: 01
Experiment no. 01

Name of the experiment:

Power Semiconductor Diodes: Characteristics and Applications

Prepared by:
Name: Nehal Hasnain Refath ID: 13221012
Objective: A power diode has a P-I-N structure as compared to the signal diode
having a P-N structure. Here, I (in P-I-N) stands for intrinsic semiconductor layer
to bear the high-level reverse voltage as compared to the signal diode beside that
fr ther benifts we use pwer did ever nrma dide

I-V Characteristics power diode

 50mA

0mA

-50mA

-100mA

-150mA
-200V -180V -160V -140V -120V -100V -80V -60V -40V -20V -0V 20V
I(D1)
V_V1

Conducting period (0-2) : The part of an alternating-voltage cycle during which

the current flows in the forward direction
 1.5mA

1.0mA

0.5mA

0A

-0.5mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V 2.0V
I(D1)
V_V1

Reverse breakdown:
0A

-1.0mA

-2.0mA

-3.0mA

-4.0mA

-5.0mA
-80V -79V -78V -77V -76V -75V -74V -73V -72V -71V -70V
I(D1)
V_V1

Single phase Half-wave Rectifier:

 400V

0V

SEL>>
-400V
V(V1:+)
400mA

200mA

0A

-200mA
0s 5ms 10ms 15ms 20ms 25ms 30ms 35ms 40ms
I(D1)
Time

For the half-wave rectifier of Fig. R=100, L=0.1H, f=60Hz, Vm=100V

Graph of current:
100V

50V

0V

-50V
0s 2ms 4ms 6ms 8ms 10ms 12ms 14ms 16ms 18ms 20ms 22ms 24ms 26ms 28ms 30ms
V2(D1)
Time
Replacing the diode with break-diode:

Average, RMS current and power absorbed by RL load:

400mA

300mA

200mA

100mA

0A
0s 2ms 4ms 6ms 8ms 10ms 12ms 14ms 16ms 18ms 20ms 22ms 24ms 26ms 28ms 30ms
I(D2) AVG( I(D2)) RMS( I(D2))
Time
Half-wave rectifier circuit with parametric sweep:

6.0A

5.0A

4.0A

3.0A

2.0A

1.0A

0A
0s 2ms 4ms 6ms 8ms 10ms 12ms 14ms 16ms 18ms 20ms 22ms 24ms 26ms 28ms 30ms
AVG(I(D2))
Time

The actual Inductor value for which 2A average current is achievable :

3.0A

2.5A

2.0A

1.5A

1.0A

0.5A

0A
0s 2ms 4ms 6ms 8ms 10ms 12ms 14ms 16ms 18ms 20ms 22ms 24ms 26ms 28ms 30ms
AVG(I(D2))
Time