Professional Documents
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ADE-208-1253 (Z)
1st. Edition
Mar. 2001
Application
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-3P
G 1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
2SK1167, 2SK1168
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1167 VDSS 450 V
2SK1168 500
Gate to source voltage VGSS 30 V
Drain current ID 15 A
1
Drain peak current I D(pulse)* 60 A
Body to drain diode reverse drain current I DR 15 A
2
Channel dissipation Pch* 100 W
Channel temperature Tch 150 C
Storage temperature Tstg 55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at TC = 25C
2
2SK1167, 2SK1168
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1167 V(BR)DSS 450 V I D = 10 mA, VGS = 0
breakdown voltage 2SK1168 500
Gate to source breakdown V(BR)GSS 30 V I G = 100 A, VDS = 0
voltage
Gate to source leak current I GSS 10 A VGS = 25 V, VDS = 0
Zero gate voltage 2SK1167 I DSS 250 A VDS = 360 V, VGS = 0
drain current 2SK1168 VDS = 400 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 3.0 V I D = 1 mA, VDS = 10 V
Static Drain to source 2SK1167 RDS(on) 0.25 0.36 I D = 8 A, VGS = 10 V *1
on state resistance 2SK1168 0.30 0.40
Forward transfer admittance |yfs| 8 13 S I D = 8 A, VDS = 10 V *1
Input capacitance Ciss 2050 pF VDS = 10 V, VGS = 0,
Output capacitance Coss 600 pF f = 1 MHz
Reverse transfer capacitance Crss 75 pF
Turn-on delay time t d(on) 30 ns I D = 8 A, VGS = 10 V,
Rise time tr 110 ns RL = 3.75
Turn-off delay time t d(off) 150 ns
Fall time tf 70 ns
Body to drain diode forward VDF 1.0 V I F = 15 A, VGS = 0
voltage
Body to drain diode reverse t rr 500 ns I F = 15 A, VGS = 0,
recovery time diF/dt = 100 A/s
Note: 1. Pulse test
3
2SK1167, 2SK1168
Power vs. Temperature Derating Maximum Safe Operation Area
100
150
10
s
Channel Dissipation Pch (W)
30 10
0
PW s
0.3 2SK1168
Ta= 25C 2SK1167
0.1
0 50 100 150 1 3 10 30 100 300 1,000
Case Temperature TC (C) Drain to Source Voltage VDS (V)
12 5.0 V 12
8 8
4.5 V
75C 25C
4 4
VGS = 4V TC = 25C
0 4 8 12 16 20 0 2 4 6 8 10
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
4
2SK1167, 2SK1168
Pulse Test
8 2
20 A
1.0
VDS (on) (V)
RDS(on) ()
6
VGS = 10 V
0.5
4
10 A
0.2 15 V
2 ID = 5 A
0.1
0.05
0 4 8 12 16 20 1 2 5 10 20 50 100
Gate to Source Voltage VGS (V) Drain Current ID (A)
50
Forward Transfer Admittance yfs (S)
0.6
5
10 A
0.4
5A
2
0.2
1.0
0 0.5
40 0 40 80 120 160 0.2 0.5 1.0 2 5 10 20
Case Temperature TC (C) Drain Current ID (A)
5
2SK1167, 2SK1168
f = 1 MHz
VGS = 0
2,000 Ciss
Pulse Test
Capacitance C (pF)
1,000 1,000
500 Coss
200 100
100
Crss
50 10
0.2 0.5 1.0 2 5 10 20 0 10 20 30 40 50
Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)
VDS t d (off)
400 V 200
300 12
VGS tr
100 tf
200 8
50
t d (on)
ID = 15 A
100 VDD = 400 V 4
250 V 20
100 V
0 10
0 20 40 60 80 100 0.5 1.0 2 5 10 20 50
Gate Charge Qg (nc) Drain Current ID (A)
6
2SK1167, 2SK1168
12
4
5 V, 10 V
VGS = 0, 10 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
D=1 TC = 25C
1.0
0.5
0.3 0.2
0.1 chc (t) = S(t) chc
0.1 0.05 chc = 1.25C/W,TC = 25C
PDM
0.02
0.03 0 . 0 1 ulse D = PW
ot P T
1Sh PW
T
0.01
10 100 1m 10 m 100 m 1 10
Pulse Width PW (s)
Vout 10 % 10 %
50
. 30 V 90 % 90 %
Vin = 10 V VDD =.
td (on) tr td (off) tf
7
2SK1167, 2SK1168
Package Dimensions
As of January, 2001
5.0 0.3
15.6 0.3 4.8 0.2 Unit: mm
3.2 0.2 1.5
1.0
0.5
19.9 0.2
14.9 0.2
0.3
2.0
1.6
3.6 0.9
1.0
8
2SK1167, 2SK1168
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third partys rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
9
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