2SK1151(L)(S), 2SK1152(L)(S)

Silicon N-Channel MOS FET

ADE-208-1245 (Z)
1st. Edition
Mar. 2001

Application

High speed power switching

Features

Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter

Outline

DPAK-1
4
4

1
2
3
1
2 3

1. Gate
G
2. Drain
3. Source
4. Drain

S
2SK1151(L)(S), 2SK1152(L)(S)
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1151 VDSS 450 V
2SK1152 500
Gate to source voltage VGSS 30 V
Drain current ID 1.5 A
1
Drain peak current I D(pulse)* 6 A
Body to drain diode reverse drain current I DR 1.5 A
2
Channel dissipation Pch* 20 W
Channel temperature Tch 150 C
Storage temperature Tstg 55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at TC = 25C

2
 2SK1151(L)(S), 2SK1152(L)(S)
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1151 V(BR)DSS 450 V I D = 10 mA, VGS = 0
breakdown voltage 2SK1152 500
Gate to source breakdown V(BR)GSS 30 V I G = 100 A, VDS = 0
voltage
Gate to source leak current I GSS 10 A VGS = 25 V, VDS = 0
Zero gate voltage 2SK1151 I DSS 100 A VDS = 360 V, VGS = 0
drain current 2SK1152 VDS = 400 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 3.0 V I D = 1 mA, VDS = 10 V
Static Drain to source 2SK1151 RDS(on) 3.5 5.5 I D = 1 A, VGS = 10 V *1
on stateresistance 2SK1152 4.0 6.0
Forward transfer admittance |yfs| 0.6 1.1 S I D = 1 A, VDS = 20 V *1
Input capacitance Ciss 160 pF VDS = 10 V, VGS = 0,
Output capacitance Coss 45 pF f = 1 MHz
Reverse transfer capacitance Crss 5 pF
Turn-on delay time t d(on) 5 ns I D = 1 A, VGS = 10 V,
Rise time tr 10 ns RL = 30
Turn-off delay time t d(off) 20 ns
Fall time tf 10 ns
Body to drain diode forward VDF 1.0 V I F = 1.5 A, VGS = 0
voltage
Body to drain diode reverse t rr 220 ns I F = 1.5 A, VGS = 0,
recovery time diF/dt = 100 A/s
Note: 1. Pulse test

3
2SK1151(L)(S), 2SK1152(L)(S)

Power vs. Temperature Derating Maximum Safe Operation Area

30 10

10
n) ted his
10
Channel Dissipation Pch (W)

s
3

i t
0
s

DS lim in
R is ion
1

Drain Current ID (A)

PW
m

by rea rat
D

(o
20 C s

a pe
1.0

=
O

10
pe

m
ra

s
tio

(1
0.3 n

Sh
(T

ot
C

)
=
10 0.1 25
C
)
0.03 2SK1151
Ta = 25C 2SK1152
0.01
0 50 100 150 1 10 100 1,000
Case Temperature TC (C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

2.0 2.0
15 V 5V
VDS = 20 V
Pulse Test 6V
1.6 1.6 Pulse Test
10 V
Drain Current ID (A)

Drain Current ID (A)

4.5 V
1.2 1.2

0.8 0.8
4V 25C
75C
0.4 0.4
VGS = 3.5 V
TC = 25C

0 4 8 12 16 20 0 2 4 6 8 10
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

4
 2SK1151(L)(S), 2SK1152(L)(S)

Drain to Source Saturation Voltage Static Drain to Source on State

vs. Gate to Source Voltage Resistance vs. Drain Current
100

Static Drain to Source on State Resistance

20
Drain to Source Saturation Voltage

Pulse Test 50 Pulse Test

16

20 VGS = 10 V

RDS (on) ()
VDS (on) (V)

12
2A
10
8
5 15 V

1A
4
ID = 0.5 A 2

1
0 4 8 12 16 20 0.05 0.1 0.2 0.5 1.0 2 5
Gate to Source Voltage VGS (V) Drain Current ID (A)

Static Drain to Source on State Forward Transfer Admittance

Resistance vs. Temperature vs. Drain Current
Forward Transfer Admittance yfs (S)

10 5
Static Drain-Source on State Resistance

ID = 2 A
VGS = 10 V VDS = 20 V
8 Pulse Test 2 Pulse Test 25C

1.0
RDS (on) ()

6
1A TC = 25C
0.5 75C
0.5 A
4
0.2
2
0.1

0
40 0 40 80 120 160 0.05 0.1 0.2 0.5 1.0 2 5
Case Temperature TC (C) Drain Current ID (A)

5
2SK1151(L)(S), 2SK1152(L)(S)

Body to Drain Diode Reverse Typical Capacitance

Recovery Time vs. Drain to Source Voltage
1,000
1,000
VGS = 0
f = 1 MHz
Reverse Recovery Time trr (ns)

500 di/dt = 100A/s, Ta = 25C

VGS = 0
Pulse Test Ciss

Capacitance C (pF)
200 100

100 Coss

50
10

20
Crss

10 1
0.05 0.1 0.2 0.5 1.0 2 5 0 10 20 30 40 50
Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)

Dynamic Input Characteristics Switching Characteristics

500 20 100
100 V VGS = 10 V VDD = 30 V

PW = 2 s, duty < 1%
Drain to Source Voltage VDS (V)

Gate to Source Voltage VGS (V)

250 V 50
400 16
Switching Time t (ns)

VDS 400 V
td (off)
20
300 12 tf
VGS 10
200 8 td (on)
5
ID = 1.5 A tr
100 VDD = 400 V 4
250 V 2
100 V
0 1
0 2 4 6 8 10 0.05 0.1 0.2 0.5 1.0 2 5
Gate Charge Qg (nc) Drain Current ID (A)

6
 2SK1151(L)(S), 2SK1152(L)(S)
Reverse Drain Current vs.
Source to Drain Voltage
2.0

Reverse Drain Current IDR (A)

1.6 Pulse Test

1.2

0.8

0.4 5 V,10 V

VGS=0, 10V

0 0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)

Normalized Transient Thermal Impedance vs. Pulse Width

3

D=1 TC = 25C
1.0
0.5

0.3 0.2
0.1 chc(t) = S (t) chc
0.1 0.05 chc = 6.25C/W, TC = 25C
PDM
0.02
D = PW
0.03 lse T
0.01 ot Pu PW
S h
1 T
0.01
10 100 1m 10 m 100 m 1 10
Pulse Width PW (s)

Switching Time Test Circuit

Wavewforms
Vin Monitor
90 %
Vout Monitor
D.U.T
RL Vin 10 %

Vout 10 % 10 %
50
. 30 V 90 % 90 %
Vin = 10 V VDD =.
td (on) tr td (off) tf

7
2SK1151(L)(S), 2SK1152(L)(S)

Package Dimensions

As of January, 2001
Unit: mm

1.7 0.5
6.5 0.5 2.3 0.2
5.4 0.5 0.55 0.1

5.5 0.5
1.2 0.3

16.2 0.5
1.15 0.1
3.1 0.5

0.8 0.1

2.29 0.5 2.29 0.5 0.55 0.1

Hitachi Code DPAK (L)-(1)

JEDEC
EIAJ Conforms
Mass (reference value) 0.42 g

8
 2SK1151(L)(S), 2SK1152(L)(S)

As of January, 2001
1.7 0.5 Unit: mm

6.5 0.5 2.3 0.2

5.4 0.5 0.55 0.1 (4.9)

(5.3)
5.5 0.5
1.2 Max

0 0.25

1.15 0.1
0.8 0.1 0.55 0.1
2.5 0.5

2.29 0.5 2.29 0.5

Hitachi Code DPAK (S)-(1),(2)

JEDEC
EIAJ Conforms
Mass (reference value) 0.28 g

9
2SK1151(L)(S), 2SK1152(L)(S)

As of January, 2001
1.5 0.5 Unit: mm

6.5 0.5 2.3 0.2

5.4 0.5 0.55 0.1 (5.1)
(0.1) (0.1)

(5.1)
5.5 0.5
1.2 Max

0 0.25

1.15 0.1
0.8 0.1 0.55 0.1
2.5 0.5

2.29 0.5 2.29 0.5

Hitachi Code DPAK (S)-(3)

JEDEC
EIAJ Conforms
Mass (reference value) 0.28 g

10
 2SK1151(L)(S), 2SK1152(L)(S)

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