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MDD1502
Single N-channel Trench MOSFET 30V, 45.7A, 8.5m
Thermal Characteristics
Note :
5.0V
20 8 VGS = 10V
3.0V
10 4
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 10 15 20 25 30 35
1.8 100
Notes :
Notes :
ID = 16.0A
1. VGS = 10 V
1.6 2. ID = 16.0 A
Drain-Source On-Resistance
80
Drain-Source On-Resistance
RDS(ON), (Normalized)
1.4
RDS(ON) [m ],
60
1.2
40
1.0
TA = 25
20
0.8
0.6 0
-50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10
16
Notes :
Notes : VGS = 0V
VDS = 5V 1
10
IDR, Reverse Drain Current [A]
12
ID, Drain Current [A]
TA=25
0
8 10
TA=25
4
-1
10
900
Capacitance [pF]
6
600
Notes ;
300 Coss 1. VGS = 0 V
2. f = 1 MHz
2
Crss
0 0
0 4 8 12 16 0 5 10 15 20 25 30
60
Operation in This Area
is Limited by R DS(on)
2
10 50
10 ms
ID, Drain Current [A]
100 ms 40
10
1 1s
10s
DC 30
0
10 20
Single Pulse 10
-1 TJ=Max rated
10
TC=25
0
-1 0 1 2 25 50 75 100 125 150
10 10 10 10
Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Case Temperature
1
10
D=0.5
Z JA(t), Thermal Response
0 0.2
10
0.1
0.05
-1
0.02
10
0.01
-2
single pulse
10 Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Z JC* R JC(t) + TC
-3
10
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]
D-PAK (TO-252)
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