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EC 6201 ELECTRONIC DEVICES

UNIT I UNIT IV
1. PN junction diode forward & reverse bias, VI 1. Operation & characteristics of Zener diode.
characteristics. N15, A15, N14, A14 N15, N14, A14
2. PN junction diode current components. A14 2. Operation & characteristics of Tunnel diode.
3. PN junction diode switching characteristics. N15, A15
N15, N14, A14 3. Operation & characteristics of Varactor diode.
4. Drift current, Diffusion current. A15, N14, A14

N15, A15 4. Operation & characteristics of LASER diode.


A14
5. Drift capacitance, Diffusion capacitance.
5. Operation & characteristics of Schottky
6. Intrinsic semiconductor, Extrinsic
barrier diode. N15, A14
semiconductor.
6. Operation & characteristics of LDR.
7. Problems.
7. Metal Semiconductor junction. A15

UNIT II
UNIT V
1. Common Emitter configuration.
A15, N14, A14 1. Operation & characteristics of SCR.
2. Common Base configuration. N15, A14 N15, A14
3. Common Collector configuration. A14 2. Operation & characteristics of UJT. N15, N14
4. NPN/PNP transistor operation. A15 3. Operation & characteristics of TRIAC
5. Multi emitter transistor. 4. Operation & characteristics of DIAC.
6. Ebers Moll model. N14 5. Operation& characteristics of Solar cell. A14
7. h-Parameters. N15, A15 6. Operation& characteristics of Photo
8. Compare CE, CB, CC. N15, A14 transistor. N14
9. Early effect. A15, N14 7. Operation& characteristics of LED
8. Operation & characteristics of Opto coupler.
N14
UNIT III
9. Operation & characteristics of LCD N15, A15
1. Operation& characteristics of JFET.
10 Operation & characteristics of CCD.
N15, A15, N14, A14
N15, A15, N14, A14
2. Operation& characteristics of DE MOSFET.
N15, A15, A14 11. Power BJT. A15
3. Operation & characteristics of E MOSFET. 12. Power MOSFET. A15
N14, A14
4. Operation& characteristics of FINFET. A14
5. Operation& characteristics of Dual gate
MOSFET. A15, A14
ST.MOTHER THERESA ENGINEERING COLLEGE

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