NAMAKKAL- TRICHY MAIN ROAD, THOTTIAM DEPARTMENT OF ELECTRONICS AND COMMUNIATION ENGINEERING EX-05 MODEL EXAMINATION Rev: 0 EC 6701 RF & MICROWAVE ENGINEERING VII SEMESTER Date:09.10.2017 Session : AN Time: 3 hours Max Marks: 100 PART - A (1002=20 MARKS) Sl.No. Questions Blooms CO Why it is difficult to measure Z, Y, h and ABCD parameters at microwave 1. U 1 frequencies? 2. Give the relationship between [s] and [z]. R 1 3. What are the need for impedance matching networks? U 2 4. Define transducer power gain and unilateral power gain. R 2 A directional coupler is having coupling factor of 25 dB and directivity of 45 dB. 5. Ap 3 If the incident power is 110 mW, what is the coupled power? A 25 mW signal is fed into one of collinear port 1 of a lossless H plane T junction. 6. Calculate the power delivered through each port when other ports are terminated in Ap 3 matched load. 7. What is negative resistance in Gunn diode? U 4 A helix travelling wave tube operates at 4 GHz, under a beam voltage of 10 kV 8. and beam current of 500mA. If the helix is 25 and interaction length is 20cm, Ap 4 find the gain parameter. 9. Distinguish between TWT and Klystron. A 5 10. What are the possible errors in VSWR measurement? R 5
PART B(516=80 marks)
Sl.No. Questions Blooms CO 2 + 4 6 (a) (i) Evaluate the S parameters from the Z parameters. [] = [ ] , 50. 4 Ap 1 (8) 11. (ii) Derive the expression for the Scattering matrix of multiport network.(8) A 1 OR (b) (i) Explain and prove the properties of the S parameter.(8) R 1 (ii) Write in detail about capacitor and inductor. (8) U 1 (a) (i)A microwave amplifier is characterized by its S parameters. Derive equations A 2 For power gain, available power gain and transducer gain.(10) (ii) Output impedance of a transmitter operating frequency of 2 GHz is ZT=(150+j50). Design an L type matching network so that maximum power is delivered to the antenna Ap 2 whose input impedance is ZA=(50+j20)&Z0=50 . (6) OR 12. (b) (i) Explain various stabilization methods and also explain stability considerations for U 2 RF transistor amplifier design. (16) (ii) Design a T-type matching network that transforms load impedance ZL = (60-j30) ohms into a Zin= (10+j20) ohms input impedance and that has a maximum nodal quality factor of Ap 2 3. Compute the values for the matching network components assuming that matching is required at f = 1GHz. Assume Z0 = 50 ohms. (a) (i) Explain the principle of operation of the Magic Tee and obtain their S matrix. U 3 Discuss about the applications of Magic Tee.(8) (ii) Explain the types of attenuator and discuss the working principle of precision U 3 13. type attenuator.(8) OR (b) Describe the Gunn effect with the aid of Two valley model theory and explain the R 3 Gunn diode operation. (16) (a)(i) A two cavity klystron amplifier has the following parameters: Beam voltage Vo = 1000v, Beam current Io = 25mA, Frequency f = 3 GHz, Ro = 40 k, Gap spacing I either cavity d = 1mm, Spacing between the two cavities L = 4cm, Effective Ap 4 shunt impedance, Rsh = 30 k, Calculate input gap voltage, voltage gain and efficiency. 14. (8) (ii) Explain the working principle of Travelling Wave Tube Amplifier.(8) U 4 OR (b) Derive the equation of velocity modulated wave and discuss the concept ofbunching A 4 effect in two cavity klystron. (a) (i) Explain the measurement of VSWR with the help of neat block diagram.(8) U 5 (ii) Describe the measurement of power at microwave frequencies in detail.(8) U 5 OR 15. (b) (i) Explain the procedure to measure the impedance of a load at microwave frequency. U 5 (8) (ii) Describe how the frequency of a given microwave source can be measured.(8) U 5