Professional Documents
Culture Documents
6, November 2014
using the negative feedback [8]. However, the negative amplifier under linear operating conditions is derived from
feedback network deteriorates NF and lowers the maximum the equation:
power gain of transistor. GT [dB] G1[dB] G2 [dB] (9)
Another widely used negative feedback technology is the
source inductive degeneration LS [4], [9], [10], which With a low NF, LNA must have a high gain for processing
enhances circuit stability, achieves noise matching, and signal applied to the input port of circuit. If the LNA does not
provides good linearity. However, its small inductance L nH have a high gain, then the signal will be affected by noise in
can not be achieved and controlled easily. What is worse, a LNA circuit itself and attenuated, so high gain is an important
little change in the inductance significantly influences the parameter of LNA.
gain, stability, and noise figure. For instance, excessive E. Third-Order Intercept Point
source inductance can bring about LNA oscillations because LNA should be linear enough to handle strong
of gain peaking at higher frequencies [11]. Therefore, such a interferences without introducing intermodulation distortion.
LNA has to be designed carefully to avoid instability. To The linearity of an LNA is strongly coupled to the gm.
solve these problems, LS is replaced by a microstrip Nonlinearities arise from the fact that gm is not constant when
transmission line with the length of l according to the a signal is applied to the gate. There are many measures of
formula: linearity, but the most commonly used benchmark for a
11.81L
l (5) typical receiver application is the third-order intercept (IP3).
Z0 r The relation between the input IP3 (IIP3) and the output IP3
where r is the relative permittivity of the layout. (OIP3) is defined as:
IIP3 =OIP3-Gain (10)
B. Stability
In RF amplifier design, in order to achieve a normal With the rapid development of wireless communication,
amplification and avoid the occurrence of self-oscillation, the CDMA system has added to the challenge because of its high
stability of amplifier should be ensured. Unconditional linearity or high IP3 requirement. As discussed before, high
stability can simplify amplifier design and show a stable state gain in the first stage implies a low total noise figure.
for any signal source impedance and load impedance, which However, high gain in the first stage also means that the total
can be expressed by Rowlett Criteria [12]: linearity gets worse. Thus, a compromise between noise and
linearity has to be made in LNA design.
2 2 2
1 S11 S 22
K 1 (6)
2 S12 S 21
III. CIRCUIT IMPLEMENTATION
S11S 22 S12 S 21 1 (7)
The LNA design has been based on ATF-531P8 enhanced
When the stability factor K is greater than unity, circuit pHEMT (Agilent Co., Ltd.). The device is ideal as a
will be unconditionally stable for any combination of source single-voltage high linearity, low-noise, and medium-power
and load impedances. Otherwise, the circuit is potentially amplifier. With a permittivity of 3.38, a thickness of 0.508
unstable with the possibility of oscillation. mm, and a loss of less than 0.0027, Rogers 4003C dielectric
substrate has been selected. The proposed LNA topology is
C. Noise Figure basically a two-stage common source (CS) amplifier due to
When one designs a receiver front-end, each component its better noise characteristic than a common gate (CG)
has to be designed with a noise figure and gain so that the amplifier.
specification for the whole front-end is met. In a cascade
A. Design with Distributed Elements
amplifier, the total noise figure can be calculated using Friis
formula [9]: Fig. 2 shows the topology of the amplifier designed using
distributed elements. Shunt feedback resistor in two stages
( NF2 1) ( NF3 1) and source microstrip line in the second stage are utilized to
NFT NF1 (8)
G1 G1G2
obtain good gain flatness and keep the amplifier stable.
where NFn and Gn are the noise figure and gain of n-th stage The LNA is biased at VDS=4V and IDS=135mA with supply
amplifier, respectively. According to (8), the gain voltage VCC1 of +5V. C3 and C4 are filtering capacitors, and
dependency of NF results in the fact that once the gain G1 is the voltage divider consists of resistors R2 and R3, through
increased, the NF of subsequent stages is less important. The which VCC1 provides an adequate gate voltage. Drain resistor
total NFT is mainly determined by the noise figure from the R1 is used to ensure a proper drain voltage. For narrow band
first stage in the receiver chain. Therefore, trying to achieve a amplifiers, /4 microstrip lines used for RF blocking are
good NF, most of the design effort must be put on the first always introduced in gate and drain bias circuits [13]. In this
stage in the receiver chain. paper about wideband amplifier, the length of transmission
lines TL19 and TL20 are close to /4 at the center frequency of
D. Gain the desired passband. The bias circuit of the second stage
Power gain of 2-ports circuit network with power amplifier is the same as that of the first one.
impedance or load impedance at amplifiers is classified into The 1000pF capacitors Cin, C6, and Cout at input/output
Operating Power Gain(GP), Transducer Power Gain(GT), and ports and inter-stage are used as DC blocking capacitors.
Available Power Gain(GA) [5]. The total gain of a dual-stage Input/output and inter-stage matching networks are the single
457
International Journal of Information and Electronics Engineering, Vol. 4, No. 6, November 2014
short-circuit stub matchings designed using Smith Chart width of 1.12mm are not only the input and output pads but
matching techniques. Short-circuit stub requires a shorter also the parts of matching networks. To obtain good
length than open-circuit stub, which is due to the fact that the simulation results, the microstrip line dimensions and
open-circuit stub models a negative susceptance. nominal values of the lumped elements are optimized and
Transmission lines TL1 and TL2 with a length of 4mm and a tuned by trial and error in the simulation.
capacitor Cgd on the performance of amplifier. Neutralization RS is the signal source impedance, usually 50. With given
cancels signal flowing through Cgd by adding a shunt values of gm and Cgs, we can obtain the desired impedance
negative feedback path consisting of a resistor Rf, a capacitor gmLs/Cg, the real part of Zin1 denoted by Re(Zin1), to match RS
Cf, and an inductor Lf [14]. Now, the gain flatness is mainly and acquire a good gain performance. However, the optimum
determined by the impedance Zf of feedback path: source impedance to achieve the best NF is not the same as
1 the one that achieves the maximum gain. The imaginary part
Z f j (L f ) Rf (11)
C f of Zin1 is cancelled at resonance frequency:
458
International Journal of Information and Electronics Engineering, Vol. 4, No. 6, November 2014
1 g L
Z in 2 jLs 2 m s2 (19)
jC gs C gs
1 C R 1
Z out1 [ j (L3 Cds R52 ) ds 5 ] || (20)
C6 C5 jC7
459
International Journal of Information and Electronics Engineering, Vol. 4, No. 6, November 2014
performances in [16]-[18], a higher gain with a low NF and a an OIP3 above 33.461dBm. The other LNA obtains better
high OIP3 is achieved in a wider frequency band in this paper. performances and trade-off among them. Therefore, the
Although Chaudhari et al [19] presented a LNA over a wider lumped elements are still employed to design LNA at high
frequency band of 0.08-7 GHz, the obtained NF is much frequencies by many authors. The LNA has a 19.4 0.46dB
higher, 6-8dB. gain, a NF less than 1.894dB, and an OIP3 above 34dBm. Its
VSWR2 are always under 2 at frequencies ranging from
0.5GHz to 4.5GHz, while VSWR1 varies between 2.0 and
2.23 over the frequency band of 0.5-0.7GHz. These results
are better than those in other papers. Such LNA can be
applied in the front-end of WCDMA and WLAN
infrastructures to reduce the noise figures of the following
blocks and improve the gain.
REFERENCES
[1] J. X. Zhao, M. R. Lu, and J. Deng, Fundamentals of Radio Frequency
Circuit, 2nd ed., Xian: Xidian University Press, 2011, ch. 4, pp.
107-110.
[2] G. S. Kong, Z. X. Luo, T. L. Zhang, and K. Yang, Design of 1-4 GHz
broadband low noise amplifier, Research & Progress of Solid State
Electronics, vol. 31, no. 2, pp. 165-168, Apr. 2011.
[3] O. Garcia-Perez, D. Segovia-Vargas, L. E. Garcia-Munoz, J. L.
Jimenez-Martin, and V. Gonzalez-Posadas, Broadband differential
low-noise amplifier for active differential arrays, IEEE Trans.
Microwave Theory Tech., vol. 59, no. 1, pp. 108-115, Jan. 2011.
[4] P. Andreani and H. Sjland, Noise optimization of an inductively
degenerated CMOS low noise amplifier, IEEE Trans. on Circuits
and SystemsII: Analog and Digital Signal Processing, vol. 48, no. 9,
pp. 835-841, Sep. 2001.
[5] A. B. Ibrahim, A. R. Othman, M. N. Husain, and M. S. Johal, Low
noise, high gain LNA at 5.8GHz with cascode and cascaded
techniques using T-matching network for wireless applications.
International Journal of Information and Electronics Engineering,
vol. 1, no. 2, pp. 146-149, Sep. 2011.
[6] S. Anderssony, C. Svenssony, and O. Drugge, Wideband LNA for a
multistandard wireless receiver in 0.18 m CMOS, in Proc. 29th
European Solid-State Circuits Conf., Estoril, Sep. 2003, pp. 655-658.
[7] M. Sumathi and S. Malarvizhi, Performance comparison of RF
CMOS low noise amplifiers in 0.18m technology scale,
International Journal of VLSI design & Communication Systems, vol.
2, no. 2, pp. 45-53, June 2011.
[8] G. Gonzalez, Microware Transistor Amplifiers Analysis and Design,
2nd ed., New Jersey: Prentice Hall, 2003, ch. 4, pp. 333-338.
[9] B. M. Liu, C. H. Wang, M. L. Ma, and S. Q. Guo, An
Ultra-Low-Voltage and Ultra-Low-Power 2.4 GHz LNA Design,
Radioengineering, vol. 18, no. 4, pp. 527-531, Dec. 2009.
[10] R. C. Liu, C. R. Lee, H. Wang, and C. K. Wang, A 5.8-GHz
two-stage high-linearity low-voltage low noise amplifier in a 0.35 m
CMOS technology, in Proc. IEEE Radio Frequency Integrated
Circuits Symposium, Seattle, 2002, pp. 221-224.
[11] A. P. Adsul and S. K. Bodhe, Performance evaluation of different
LNAs having noise cancellation and phase linearity characteristics
for IR-UWB systems, International Journal of Engineering and
Technology, vol. 3, no. 6, pp. 419-428, Dec. 2011.
[12] R. Ludwing and G. Bogdanov, RF Circuit Design Theory and
Application. 2nd ed., New Jersey: Prentice Hall, 2000, ch. 9, pp.
470-477.
[13] F. Yang, Y. W. Zhou, Y. Z. Ma, and H. T. Wang, Design and
implementation of an S-band GaN high power amplifier, Fire
Fig. 5. Simulation results (a) stability factor (b) gain and noise figure (c) Control Radar Technology, vol. 40, no. 3, pp. 86-89, Sep. 2011.
input and output VSWRs (d) output third-order intercept point. [14] D. J. Cassan and J. R. Long, A 1-V transformer-feedback low-noise
amplifier for 5-GHz wireless LAN in 0.18m CMOS, IEEE Journal
of Solid-State Circuits, vol. 38, no. 3, pp. 427-435, Mar. 2003.
[15] F. Zhang and P. R. Kinget, Low-power programmable gain CMOS
V. CONCLUSION distributed LNA IEEE Journal of Solid-state Circuits, vol. 41, no. 6,
pp. 1333-1343, June 2006.
This paper presents two wideband low noise amplifier [16] Y. L. Wang, M. L. Her, and H. H. Lin, Design and implementation of
designed with microstrip lines for 2.0-3.8GHz range and with LNA with high gain and low power consumption for UWB system, in
lumped elements for 0.5-4GHz using shunt resistive Proc. 15th Asia-Pacific Conf. Communications, Shanghai, 2009, pp.
422-425.
feedback and source inductive degeneration technologies. [17] C. W. Kim, M. S. Kang, P. T. Anh, H. T. Kim, and S. G. Lee, An
Simulation results of the LNA with microstrip lines matching ultra-wideband CMOS low noise amplifier for 35-GHz UWB
show the maximum gain of 18.86dB with a gain flatness of system, IEEE Journal of Solid-state Circuits, vol. 40, no. 2, pp.
544-547, Feb. 2005.
0.7dB, the maximum NF of 2.4dB, less than 2.4 VSWRs, and [18] F. Bruccoleri, E. A. M. Klumperink, and B. Nauta, Wide-band
460
International Journal of Information and Electronics Engineering, Vol. 4, No. 6, November 2014
CMOS low-noise amplifier exploiting thermal noise canceling, IEEE Mr. Yao has published several papers as the first author in journals
Journal of Solid-state Circuits, vol. 39, no. 2, pp. 275-282, June 2004. including Chinese Physics B, Materials Science in Semiconductor
[19] J. Chaudhari, R. Jani, and S. Oza, A 0.08-7 GHz low power low noise Processing, Acta Metallurgica Sinica, Research & Progress of Solid State
amplifier design using 0.18 m CMOS technology, International Electronics.
Journal of Computer Science & Emerging Technologies, vol. 4, no. 20,
pp. 513-519, Aug. 2011.
Tongxiu Fan was born in Qingdao, Shangdong, China,
Yinhua Yao was born in Fuzhou, Fujian, China, in in 1978. He received the B.Sc. degree of electromagnetic
1986. He received the B.Sc. degree of electronics field and microwave technology from Xidian University,
science and technology from Xidian University, Xian, Xian, China, in 2002.
China in 2010 and the M.Sc. degree of microelectronics He is a RF engineer working in No.36 Research
from Xidian University, Xian, China, in 2013. Institute of CETC, Jiaxing, Zhejiang, China, from 2002.
He works as a RF engineer of No.36 Research His research interests include filtering, radio frequency
Institute of CETC, Jiaxing, Zhejiang, China, from 2013. circuit and wireless communications.
His previous research interest is ZnO infrared stealth Mr. Fan has published several papers as the first author in Communication
materials design and current research interests include radio frequency Countermeasures.
circuit and wireless communications.
461