FGA15N120ANTD 1200V NPT Trench IGBT

May 2006

FGA15N120ANTD tm

1200V NPT Trench IGBT

Features Description
NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
Low saturation voltage: VCE(sat), typ = 1.9V
and switching performances, high avalanche ruggedness and
@ IC = 15A and TC = 25C
easy parallel operation.
Low switching loss: Eoff, typ = 0.6mJ
This device is well suited for the resonant or soft switching appli-
@ IC = 15A and TC = 25C
cation such as induction heating, microwave oven, etc.
Extremely enhanced avalanche capability

TO-3P
G C E E

Absolute Maximum Ratings

Symbol Description FGA15N120ANTD Units
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage 20 V
IC Collector Current @ TC = 25C 30 A
Collector Current @ TC = 100C 15 A
ICM Pulsed Collector Current (Note 1) 45 A
IF Diode Continuous Forward Current @ TC = 100C 15 A
IFM Diode Maximum Forward Current 45 A
PD Maximum Power Dissipation @ TC = 25C 186 W
Maximum Power Dissipation @ TC = 100C 74 W
TJ Operating Junction Temperature -55 to +150 C
Tstg Storage Temperature Range -55 to +150 C
TL Maximum Lead Temp. for soldering 300 C
Purposes, 1/8 from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RJC Thermal Resistance, Junction-to-Case for IGBT -- 0.67 C/W
RJC Thermal Resistance, Junction-to-Case for Diode -- 2.88 C/W
RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W

Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature

2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGA15N120ANTD Rev. A
 FGA15N120ANTD 1200V NPT Trench IGBT
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGA15N120ANTD FGA15N120ANTD TO-3P -- -- 30

Electrical Characteristics of the IGBT TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 3 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- 250 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 15mA, VCE = VGE 4.5 6.5 8.5 V
VCE(sat) Collector to Emitter IC = 15A, VGE = 15V -- 1.9 2.4 V
Saturation Voltage
IC = 15A, VGE = 15V, -- 2.2 -- V
TC = 125C
IC = 30A, VGE = 15V -- 2.3 -- V

Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V, -- 2650 -- pF
f = 1MHz
Coes Output Capacitance -- 143 -- pF
Cres Reverse Transfer Capacitance -- 96 -- pF

Switching Characteristics
td(on) Turn-On Delay Time VCC = 600 V, IC = 15A, -- 15 -- ns
RG = 10, VGE = 15V,
tr Rise Time -- 20 -- ns
Inductive Load, TC = 25C
td(off) Turn-Off Delay Time -- 160 -- ns
tf Fall Time -- 100 180 ns
Eon Turn-On Switching Loss -- 3 4.5 mJ
Eoff Turn-Off Switching Loss -- 0.6 0.9 mJ
Ets Total Switching Loss -- 3.6 5.4 mJ
td(on) Turn-On Delay Time VCC = 600 V, IC = 15A, -- 15 -- ns
tr Rise Time RG = 10, VGE = 15V, -- 20 -- ns
Inductive Load, TC = 125C
td(off) Turn-Off Delay Time -- 170 -- ns
tf Fall Time -- 150 -- ns
Eon Turn-On Switching Loss -- 3.2 4.8 mJ
Eoff Turn-Off Switching Loss -- 0.8 1.2 mJ
Ets Total Switching Loss -- 4.0 6.0 mJ
Qg Total Gate Charge VCE = 600 V, IC = 15A, -- 120 180 nC
VGE = 15V
Qge Gate-Emitter Charge -- 16 22 nC
Qgc Gate-Collector Charge -- 50 65 nC

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FGA15N120ANTD Rev. A
 FGA15N120ANTD 1200V NPT Trench IGBT
Electrical Characteristics of DIODE T C = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

VFM Diode Forward Voltage IF = 15A TC = 25C -- 1.7 2.7 V
TC = 125C -- 1.8 --
trr Diode Reverse Recovery Time IF = 15A TC = 25C -- 210 330 ns
dI/dt = 200 A/s
TC = 125C -- 280 --
Irr Diode Peak Reverse Recovery Cur- TC = 25C -- 27 40 A
rent TC = 125C -- 31 --
Qrr Diode Reverse Recovery Charge TC = 25C -- 2835 6600 nC
TC = 125C -- 4340 --

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FGA15N120ANTD Rev. A
 FGA15N120ANTD 1200V NPT Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage
Characteristics
200 150
o
T C = 25 C 20V Common Emitter
17V VGE = 15V
15V o
12V 120 TC = 25 C
Collector Current, IC [A]

150 TC = 125 C
o

Collector Current , IC [A]

90
V GE = 10V
100

60

50
30

0
0
0 2 4 6 8 10
0 2 4 6
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]

Figure 3. Saturation Voltage vs. Case Figure 4. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.0
Common Emitter Common Emitter
V GE = 15V o
T C = 25 C
Collector-Emitter Voltage, VCE [V] 16
Collector-Emitter Voltage, VCE [V]

IC = 24A

2.5 12

IC = 15A
8

2.0

4
15A
24A

I C = 7.5A
0
1.5
0 4 8 12 16 20
25 50 75 100 125 150
o Gate-Emitter Voltage, V GE [V]
Case Temperature, TC [ C]

Figure 5. Saturation Voltage vs. VGE Figure 6. Capacitance Characteristics

3500
Common Emitter
o
16 TC = 125 C
3000 Ciss
Collector-Emitter Voltage, VCE [V]

2500
12
Capacitance [pF]

2000

Common Emitter
8 1500
VGE = 0V, f = 1MHz
o
T C = 25 C
1000
4 24A 15A Coss
500 Crss

IC = 7.5A 0
0
0.1 1 10
0 4 8 12 16 20
Collector-Emitter Voltage, VCE[V]
Gate-Emitter Voltage, V GE [V]

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FGA15N120ANTD Rev. A
 FGA15N120ANTD 1200V NPT Trench IGBT
Typical Performance Characteristics (Continued)

Figure 7. Turn-On Characteristics vs. Gate Figure 8. Turn-Off Characteristics vs. Gate
Resistance Resistance
100
Common Emitter
1000 V CC = 600V, V GE = 15V
IC = 15A td(off)
o
T C = 25 C
tr T C = 125 C
o

Switching Time [ns]

Switching Time [ns]

10 td(on)
100
tf

Common Emitter
V CC = 600V, V GE = 15V
IC = 15A
o
T C = 25 C
o
T C = 125 C 10
1 0 10 20 30 40 50 60 70
0 10 20 30 40 50 60 70
Gate Resistance, R G [ ]
Gate Resistance, RG[ ]

Figure 9. Switching Loss vs. Gate Resistance Figure 10. Turn-On Characteristics vs.
Collector Current
Common Emitter
Common Emitter
V GE = 15V, R G = 10
V CC = 600V, V GE = 15V o
T C = 25 C
IC = 15A 100 o
o T C = 125 C
10 T C = 25 C
o
Switching Time [ns]

T C = 125 C
Switching Loss [mJ]

tr

Eon

td(on)
Eoff
10
1

10 15 20 25 30
0 10 20 30 40 50 60 70
Collector Current, IC [A]
Gate Resistance, R G [ ]

Figure 11. Turn-Off Characteristics vs. Figure 12. Switching Loss vs. Collector Current
Collector Current

Common Emitter Common Emitter

V GE = 15V, R G = 10 VGE = 15V, RG = 10
o o
T C = 25 C 10 T C = 25 C
o
T C = 125 C T C = 125 C
o Eon
td(off)
Switching Loss [mJ]
Switching Time [ns]

100

Eoff
1
tf

10 0.1
10 15 20 25 30 5 10 15 20 25 30
Collector Current, IC [A] Collector Current, IC [A]

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FGA15N120ANTD Rev. A
 FGA15N120ANTD 1200V NPT Trench IGBT
Typical Performance Characteristics (Continued)

Figure 13. Gate Charge Characteristics Figure 14. SOA Characteristics

15
Common Emitter
RL = 40
o 10 0
T C = 25 C Ic M A X (P u lse d)
12
50s
Gate-Emitter Voltage, VGE [V]

Ic M A X (C o n tinu o us )
1 00 s

Collector Current, Ic [A]

600V
10
9
400V 1m s
D C O p e ra tio n

1
6 Vcc = 200V

S in g le N on re p etitive
3 0.1 P u lse T c = 25 C
o

C urves m u st b e de rate d
lin ea rly w ith incre ase
in te m pe ratu re
0 0 .0 1
0 20 40 60 80 100 120 0.1 1 10 10 0 10 00

Gate Charge, Qg [nC] C o lle c to r - E m itte r V o lta g e , V C E [V ]

Figure 15. Turn-Off SOA

100
Collector Current, IC [A]

10

Safe Operating Area

o
V GE = 15V, T C = 125 C
1
10 100 1000

Collector-Emitter Voltage, VCE [V]

Figure 16. Transient Thermal Impedance of IGBT

10

1
Thermal Response [Zthjc]

0.5

0.1 0.2
0.1
0.05 Pdm

0.01 0.02 t1
0.01
t2

single pulse Duty factor D = t1 / t2

Peak Tj = Pdm Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1 10

Rectangular Pulse Duration [sec]

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FGA15N120ANTD Rev. A
 FGA15N120ANTD 1200V NPT Trench IGBT
Typical Performance Characteristics (Continued)

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

50 30

di/dt = 200A/s
25

Reverse Recovery Currnet , Irr [A]

10
Forward Current , IF [A]

20

o
TJ = 125 C
15
di/dt = 100A/s
o
TJ = 25 C
1
10

o
TC = 125 C 5
o
TC = 25 C
0.1 0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 5 10 15 20 25

Forward Voltage , VF [V] Forward Current , IF [A]

Figure 19. Stored Charge Figure 20. Reverse Recovery Time

7000 400
Stored Recovery Charge , Qrr [nC]

6000

di/dt = 200A/s Reverse Recovery Time , trr [ns] 300 di/dt = 100A/s
5000

4000 di/dt = 100A/s

200
3000 di/dt = 200A/s

2000 100

1000

0
0
5 10 15 20 25
5 10 15 20 25

Forward Current , IF [A] Forward Current , IF [A]

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FGA15N120ANTD Rev. A
 FGA15N120ANTD 1200V NPT Trench IGBT
Mechanical Dimensions

TO-3P
15.60 0.20
4.80 0.20
13.60 0.20

3.80 0.20
3.20 0.10 +0.15
9.60 0.20 1.50 0.05

18.70 0.20
12.76 0.20

19.90 0.20

23.40 0.20
13.90 0.20

2.00 0.20
3.50 0.20

3.00 0.20
16.50 0.30

1.00 0.20 1.40 0.20

+0.15
0.60 0.05
5.45TYP 5.45TYP
[5.45 0.30] [5.45 0.30]

Dimensions in Millimeters

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FGA15N120ANTD Rev. A
 FGA15N120ANTD 1200V NPT Trench IGBT
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I19

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FGA15N120ANTD Rev. A