High Voltage IGBT IXGH 25N160 VCES = 1600 V

IXGT 25N160 IC25 = 75 A

For Capacitor Discharge VCE(sat) = 2.5 V
Applications
Preliminary Data Sheet

Symbol Test Conditions Maximum Ratings TO-247 (IXGH)

VCES TJ = 25C to 150C 1600 V
VCGR TJ = 25C to 150C; RGE = 1 M 1600 V
VGES Continuous 20 V
G
VGEM Transient 30 V C
E
C (TAB)

IC25 TC = 25C 75 A
TO-268 (IXGT)
IC110 TC = 110C 25 A
ICM TC = 25C, VGE = 20 V, 1 ms 200 A
SSOA VGE = 15 V, TVJ = 125C, RG = 20 ICM = 100 A G
E
(RBSOA) Clamped inductive load @ 0.8 VCES
C (TAB)
PC TC = 25C 300 W
G = Gate, C = Collector,
TJ -55 ... +150 C E = Emitter, TAB = Collector
TJM 150 C
Tstg -55 ... +150 C Features

Maximum Lead temperature for soldering 300 C High peak current capability
1.6 mm (0.062 in.) from case for 10 s Low saturation voltage
Maximum Tab temperature for soldering SMD devices for 10 s 260 C MOS Gate turn-on
-drive simplicity
Md Mounting torque (TO-247) 1.13/10 Nm/lb-in Rugged NPT structure
Weight TO-247 6 g International standard packages
TO-268 4 g - JEDEC TO-268 and
- JEDEC TO-247 AD
Molding epoxies meet UL 94 V-0
flammability classification
Symbol Test Conditions Characteristic Values
(TJ = 25C unless otherwise specified) Applications
min. typ. max.
Capacitor discharge
BVCES IC = 250 A, VGE = 0 V 1600 V Pulser circuits
VGE(th) IC = 250 A, VCE = VGE 3.0 5.0 V
Advantages
ICES VCE = 0.8 VCES 50 A
VGE = 0 V TJ = 125C 1 mA High power density
Suitable for surface mounting
IGES VCE = 0 V, VGE = 30 V 100 nA Easy to mount with 1 screw,
(isolated mounting screw hole)
VCE(sat) IC = IC110, VGE = 15 V 2.5 V
IC = 100 A, VGE = 20 V 4.7 V

2005 IXYS All rights reserved DS99381(12/05)

 IXGH 25N160
IXGT 25N160

Symbol Test Conditions Characteristic Values

TO-247 AD Outline
(TJ = 25C unless otherwise specified)
min. typ. max.

gfs IC = 50 A; VCE = 10 V, Note 1 14 21 S

IC(ON) VGE = 15V, VCE = 10V, Note 1 200 A P

Cies VCE = 25 V, VGE = 0 V, f = 1 MHz 2090 pF

Coes 94 pF
Cres 34 pF
Qg IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 84 nC
Qge 15 nC e

Dim. Millimeter Inches

Qgc 37 nC Min. Max. Min. Max.
td(on) Resistive load 47 ns A 4.7 5.3 .185 .209
A1 2.2 2.54 .087 .102
tri IC = 100 A, VGE = 15 V, Note 1 236 ns A2 2.2 2.6 .059 .098

td(off) VCE = 1200 V, RG = 10 86 ns b 1.0 1.4 .040 .055

b1 1.65 2.13 .065 .084
tfi 440 ns b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
RthJC 0.42 K/W D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
RthCK (TO-247) 0.25 K/W e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
Notes: 1. Pulse test, t < 300 s, duty cycle < 2 % P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
TO-268: Minimum Recommended Footprint R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

TO-268 Outline

Dim. Millimeter Inches

Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A1 2.7 2.9 .106 .114
A2 .02 .25 .001 .010
b 1.15 1.45 .045 .057
b2 1.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E1 13.3 13.6 .524 .535
PRELIMINARY TECHNICAL INFORMATION e 5.45 BSC .215 BSC
The product presented herein is under development. The Technical Specifications H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a subjective L1 1.20 1.40 .047 .055
pre-production design evaluation. Ixys reserves the right to change limits, test conditions, L2 1.00 1.15 .039 .045
and dimensions without notice. L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
 IXGH 25N160
IXGT 25N160
Fig. 1. Output Characteristics Fig. 2. Exteded Output Characteristics
@ 25C @ 25C
150 275
VGE = 25V VGE = 25V
250
20V
125 20V
225

200
100 15V

IC - Amperes
I C - Amperes

15V 175

150
75
125
10V
100
50
75
10V
50
25
25

0 0
0 1 2 3 4 5 6 0 2 4 6 8 10 12 14 16 18 20
VCE - Volts VCE - Volts

Fig. 3. Output Characteristics Fig. 4. Dependence of VCE(sat) on

@ 125C Junction Temperature
150 2.1
VGE = 25V VGE = 15V
20V 1.9
125

1.7 I C = 150A
VCE(sat) - Normalized

100 15V
IC - Amperes

1.5

75 1.3
I C = 100A
10V
1.1
50

0.9
I C = 50A
25
0.7

0 0.5
0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150
VCE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage Fig. 6. Input Admittance

vs. Gate-to-Emitter Voltage
10 200

9 TJ = 25C 180

160 TJ = - 40C
8
I C = 150A 25C
140
100A 125C
IC - Amperes

7
VCE - Volts

50A 120

6 100

80
5
60
4
40
3
20

2 0
7 9 11 13 15 17 19 21 23 25 4 5 6 7 8 9 10 11 12 13 14 15
VGE - Volts VGE - Volts

2005 IXYS All rights reserved

 IXGH 25N160
IXGT 25N160
Fig. 8. Resistive Turn-On Rise Time
Fig. 7. Transconductance
vs. Junction Temperature
27 480

24 440

21 I C = 150A
400

t r - Nanoseconds
g f s - Siemens

18
360
TJ = - 40C RG = 10
15
25C VGE = 15V
320
125C
12 VCE = 1200V
280 I C = 100A
9
240
6

3 200
I C = 50A

0 160
0 20 40 60 80 100 120 140 160 180 200 25 35 45 55 65 75 85 95 105 115 125
I C - Amperes TJ - Degrees Centigrade

Fig. 9. Resistive Turn-On Rise Time Fig. 10. Resistive Turn-On Switching Times
vs. Collector Current vs. Gate Resistance
500 700 82
tr td(on) - - - -
460 RG = 10 650 78
TJ = 125C, VGE = 15V
VGE = 15V
600 VCE = 1200V 74
420
VCE = 1200V I C = 150A

t d ( o n ) - Nanoseconds
t r - Nanoseconds

550 70
t r - Nanoseconds

380
500 66
340 TJ = 125C
450 62
300
400 I C = 50A, 100A 58
260
350 54
220 TJ = 25C
300 50

180 250 46

140 200 42
50 60 70 80 90 100 110 120 130 140 150 10 15 20 25 30 35 40 45 50
I C - Amperes RG - Ohms

Fig. 11. Resistive Turn-Off Switching Times Fig. 12. Resistive Turn-Off Switching Times
vs. Junction Temperature vs. Collector Current
1200 125 1140 124

1100 120 tf td(off) - - - -

980 RG = 10, VGE = 15V 116
1000 115
VCE = 1200V
t d ( o f f ) - Nanoseconds
t d ( o f f ) - Nanoseconds

900 110
I C = 50A
t f - Nanoseconds
t f - Nanoseconds

820 108
800 105
tf td(off) - - - -
700 100 TJ = 25C
RG = 10, VGE = 15V 660 100
600 VCE = 1200V 95

500 90
I C = 100A, 150A 500 92
400 85 TJ = 25C

300 80 340 84
200 75

100 70 180 76
25 35 45 55 65 75 85 95 105 115 125 50 60 70 80 90 100 110 120 130 140 150
TJ - Degrees Centigrade I C - Amperes

IXYS reserves the right to change limits, test conditions, and dimensions.
 IXGH 25N160
IXGT 25N160
Fig. 13. Resistive Turn-Off Switching Times
Fig. 14. Gate Charge
vs. Gate Resistance
1000 450 16
tf td(off) - - - -
VCE = 800V
900 TJ = 125C, VGE = 15V 400 14
I C = 50A
VCE = 1200V
800 350 I G = 10 mA

t d ( o f f ) - Nanoseconds
12
t f - Nanoseconds

700 I C = 50A 300 10

VGE - Volts
600 250 8

500 200 6

400 150 4
I C = 150A, 100A

300 100 2

200 50 0
10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 60 70 80 90
RG - Ohms QG - NanoCoulombs

Fig. 15. Reverse-Bias Safe Operating Area Fig. 16. Capacitance

110 10,000
f = 1 MHz
100
C ies
90
Capacitance - PicoFarads

80
1,000
IC - Amperes

70

60

50
C oes
40
100
30
TJ = 125C
20 RG = 20
dV / dT < 10V / ns C res
10

0 10
200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 35 40
VCE - Volts VCE - Volts

Fig. 17. Maximum Transient Thermal Resistance

1.00
R(th)JC - C / W

0.10

0.01
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds

2005 IXYS All rights reserved