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TIP42 SERIES(TIP42/42A/42B/42C)

TIP42 SERIES(TIP42/42A/42B/42C)
Medium Power Linear Switching Applications
Complement to TIP41/41A/41B/41C

1 TO-220

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor


Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP42 - 40 V
: TIP42A - 60 V
: TIP42B - 80 V
: TIP42C - 100 V
VCEO Collector-Emitter Voltage : TIP42 - 40 V
: TIP42A - 60 V
: TIP42B - 80 V
: TIP42C - 100 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -6 A
ICP Collector Current (Pulse) -10 A
IB Base Current -2 A
PC Collector Dissipation (TC=25C) 65 W
PC Collector Dissipation (Ta=25C) 2 W
TJ Junction Temperature 150 C
TSTG Storage Temperature - 65 ~ 150 C

Electrical Characteristics TC=25C unless otherwise noted


Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: TIP42 IC = -30mA, IB = 0 -40 V
: TIP42A -60 V
: TIP42B -80 V
: TIP42C -100 V
ICEO Collector Cut-off Current
: TIP42/42A VCE = -30V, IB = 0 -0.7 mA
: TIP42B/42C VCE = -60V, IB = 0 -0.7 mA
ICES Collector Cut-off Current
: TIP42 VCE = -40V, VEB = 0 -400 A
: TIP42A VCE = -60V, VEB = 0 -400 A
: TIP42B VCE = -80V, VEB = 0 -400 A
: TIP42C VCE = -100V, VEB = 0 -400 A
IEBO Emitter Cut-off Current VEB = -5V, IC = 0 -1 mA
hFE * DC Current Gain VCE = -4V, IC = -0.3A 30
VCE = -4V, IC = -3A 15 75
VCE(sat) * Collector-Emitter Saturation Voltage IC = -6A, IB = -600mA -1.5 V
VBE(sat) * Base-Emitter Saturation Voltage VCE = -4V, IC = -6A -2.0 V
fT Current Gain Bandwidth Product VCE = -10V, IC = -500mA 3.0 MHz
* Pulse Test: PW300s, Duty Cycle2%

2000 Fairchild Semiconductor International Rev. A, February 2000


TIP42 SERIES(TIP42/42A/42B/42C)
Typical Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE


1000 -2.0

VCE = -4V IC /IB = 10

-1.6
hFE, DC CURRENT GAIN

VBE(sat)
100
-1.2

-0.8
10 VCE(sat)

-0.4

1 -0.0
-0.01 -0.1 -1 -10 -0.01 -0.1 -1 -10 -100

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage


Collector-Emitter Saturation Voltage

-100 100

80
IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

IC(MAX) (PULSE)
-10
0.5

60
1m

ms

IC(MAX) (DC)
5m

s
s

40
-1

TIP42
20
TIP42A
TIP42B
TIP42C
-0.1 0
-1 -10 -100 0 25 50 75 100 125 150 175

o
VCE[V], COLLECTOR-EMITTER VOLTAGE T C[ C], CASE TEMPERATURE

Figure 3. Safe Operating Area Figure 4. Power derating

2000 Fairchild Semiconductor International Rev. A, February 2000


TIP42 SERIES(TIP42/42A/42B/42C)
Package Demensions

TO-220

1.30 0.10 9.90 0.20 4.50 0.20

(8.70)

2.80 0.10
(1.70)

+0.10
3.60 0.10 1.30 0.05

18.95MAX.
(3.70)

15.90 0.20
9.20 0.20

(1.46)

(3.00)
(45
)
(1.00)
13.08 0.20

10.08 0.30

1.27 0.10 1.52 0.10

0.80 0.10 +0.10


0.50 0.05 2.40 0.20
2.54TYP 2.54TYP
[2.54 0.20] [2.54 0.20]

10.00 0.20

Dimensions in Millimeters

2000 Fairchild Semiconductor International Rev. A, February 2000


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not intended to be an exhaustive list of all such trademarks.

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FACT Quiet Series QS
FAST Quiet Series
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PRODUCT STATUS DEFINITIONS


Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2000 Fairchild Semiconductor International Rev. E

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