Freescale Semiconductor Document Number: MRFE6S9135H

Technical Data Rev. 1, 11/2007

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9135HR3
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
MRFE6S9135HSR3
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1000 mA, Pout = 39 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 940 MHz, 39 W AVG., 28 V
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal SINGLE W - CDMA
PAR = 7.5 dB @ 0.01% Probability on CCDF. LATERAL N - CHANNEL
Power Gain 21 dB RF POWER MOSFETs
Drain Efficiency 32.3%
Device Output Signal PAR 6.4 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset - 39.5 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 180 W CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use CASE 465B - 03, STYLE 1
Qualified Up to a Maximum of 32 VDD Operation NI - 880
Integrated ESD Protection MRFE6S9135HR3
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C - 02, STYLE 1

NI - 880S
MRFE6S9135HSR3

Table 1. Maximum Ratings

Rating Symbol Value Unit
Drain- Source Voltage VDSS - 0.5, +66 Vdc
Gate- Source Voltage VGS - 0.5, +12 Vdc
Storage Temperature Range Tstg - 65 to +150 C
Case Operating Temperature TC 150 C
Operating Junction Temperature (1,2) TJ 225 C

Table 2. Thermal Characteristics

Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case RJC C/W
Case Temperature 80C, 136 W CW 0.39
Case Temperature 80C, 39 W CW 0.48
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

Freescale Semiconductor, Inc., 2007. All rights reserved. MRFE6S9135HR3 MRFE6S9135HSR3

RF Device Data
Freescale Semiconductor 1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22 - A114) II (Minimum)
Machine Model (per EIA/JESD22 - A115) A (Minimum)
Charge Device Model (per JESD22 - C101) IV (Minimum)

Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current IDSS 10 Adc
(VDS = 66 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current IDSS 1 Adc
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current IGSS 10 Adc
(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics
Gate Threshold Voltage VGS(th) 1.4 2.1 2.9 Vdc
(VDS = 10 Vdc, ID = 400 Adc)
Gate Quiescent Voltage VGS(Q) 2.2 2.9 3.7 Vdc
(VDD = 28 Vdc, ID = 1000 mAdc, Measured in Functional Test)
Drain- Source On - Voltage VDS(on) 0.15 0.2 0.35 Vdc
(VGS = 10 Vdc, ID = 2.8 Adc)

Dynamic Characteristics (1)

Reverse Transfer Capacitance Crss 1.3 pF
(VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance Coss 410 pF
(VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance Ciss 343 pF
(VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 39 W Avg. W - CDMA, f = 940 MHz,
Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain Gps 20 21 23 dB
Drain Efficiency D 30.5 32.3 %
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF PAR 6.1 6.4 dB
Adjacent Channel Power Ratio ACPR - 39.5 - 38 dBc
Input Return Loss IRL - 15 -9 dB
1. Part internally matched both on input and output.
(continued)

MRFE6S9135HR3 MRFE6S9135HSR3
RF Device Data
2 Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, 920 - 960 MHz Bandwidth
Video Bandwidth @ 160 W PEP Pout where IM3 = - 30 dBc VBW MHz
(Tone Spacing from 100 kHz to VBW) 10
IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 40 MHz Bandwidth @ Pout = 39 W Avg. GF 0.3 dB
Average Deviation from Linear Phase in 40 MHz Bandwidth 1
@ Pout = 135 W CW
Average Group Delay @ Pout = 135 W CW, f = 940 MHz Delay 3.6 ns
Part - to - Part Insertion Phase Variation @ Pout = 135 W CW, 19
f = 940 MHz, Six Sigma Window
Gain Variation over Temperature G 0.015 dB/C
( - 30C to +85C)
Output Power Variation over Temperature P1dB 0.01 dBm/C
( - 30C to +85C)

MRFE6S9135HR3 MRFE6S9135HSR3
RF Device Data
Freescale Semiconductor 3
 VSUPPLY
+
B1 R3
VBIAS C20 C21 C22 C23 C24
+ Z7
R2
C4 C5 C6
RF
R1 C8 C11 C12 OUTPUT
Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17
RF
INPUT C25
Z1 Z2 Z3 Z4 Z5 Z6
C7 C9 C10 C13 C14
C1
C2 C3 DUT
Z8

VSUPPLY
+
C15 C16 C17 C18 C19

Z1 0.263 x 0.065 Microstrip Z11 0.202 x 0.980 x 0.444 Taper

Z2 0.310 x 0.065 Microstrip Z12 0.114 x 0.444 Microstrip
Z3 0.910 x 0.120 Microstrip Z13 0.145 x 0.444 x 0.110 Taper
Z4 0.248 x 1.020 x 0.120 Taper Z14 0.180 x 0.110 Microstrip
Z5 0.363 x 1.020 Microstrip Z15 0.585 x 0.110 Microstrip
Z6 0.057 x 1.120 Microstrip Z16 0.443 x 0.065 Microstrip
Z7, Z8 0.823 x 0.120 Microstrip Z17 0.274 x 0.065 Microstrip
Z9 0.060 x 0.980 Microstrip PCB Taconic RF - 35, 0.030, r = 3.5
Z10 0.149 x 0.980 Microstrip

Figure 1. MRFE6S9135HR3(HSR3) Test Circuit Schematic

Table 5. MRFE6S9135HR3(HSR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer
B1 Short RF Bead 2743019447 Fair- Rite
C1, C6, C15, C20, C25 39 pF Chip Capacitors ATC100B390JT500XT ATC
C2, C14 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson
C3 2.0 pF Chip Capacitor ATC100B2R0JT500XT ATC
C4 33 F, 25 V Electrolytic Capacitor EMVY250ADA330MF55G Nippon Chemi - Con
C5, C16, C17, C18, C21, 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata
C22, C23
C7, C8 6.8 pF Chip Capacitors ATC100B6R8JT500XT ATC
C9, C10, C11, C12, C13 4.7 pF Chip Capacitors ATC100B4R7JT500XT ATC
C19, C24 470 F, 63 V Electrolytic Capacitors EKME630ELL471MK25S United Chemi - Con
R1, R3 3.3 , 1/3 W Chip Resistors CRCW12103R30FKEA Vishay
R2 2.2 K, 1/4 W Chip Resistor CRCW12062201FKEA Vishay

MRFE6S9135HR3 MRFE6S9135HSR3
RF Device Data
4 Freescale Semiconductor
 C24
R3
B1

R2 C5
C6 C21 C22
C20
C4

C23
C3 R1 C8

C1 C11 C12 C14 C25

CUT OUT AREA

C9 C10
C13
C2 C7
C18

C15
C16 C17

MRFE6S9135H
C19
Rev. 1

Figure 2. MRFE6S9135HHR3(HSR3) Test Circuit Component Layout

MRFE6S9135HR3 MRFE6S9135HSR3
RF Device Data
Freescale Semiconductor 5
 TYPICAL CHARACTERISTICS

22 33

EFFICIENCY (%)
D, DRAIN
21 32
D
20 31

Gps, POWER GAIN (dB)

19 VDD = 28 Vdc, Pout = 39 W (Avg.) 30
IDQ = 1000 mA, SingleCarrier WCDMA

IRL, INPUT RETURN LOSS (dB)

Gps
18 3.84 MHz Channel Bandwidth, Input Signal 0.3 0
PAR = 7.5 dB @ 0.01% Probability (CCDF)
17 0.6 5

PARC (dBc)
16 0.9 10
PARC
15 1.2 15
IRL
14 1.5 20
860 880 900 920 940 960 980 1000 1020
f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance
@ Pout = 39 Watts Avg.

21 46

EFFICIENCY (%)
D, DRAIN
20 Gps 45

19 44
Gps, POWER GAIN (dB)

18 D VDD = 28 Vdc, Pout = 80 W (Avg.)

43
IDQ = 1000 mA, SingleCarrier WCDMA

IRL, INPUT RETURN LOSS (dB)

17 3.84 MHz Channel Bandwidth, Input Signal 2.4 0
PAR = 7.5 dB @ 0.01% Probability (CCDF)
16 2.6 5

PARC (dBc)
15 2.8 10
PARC
14 3 15
IRL
13 3.2 20
860 880 900 920 940 960 980 1000 1020
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance
@ Pout = 80 Watts Avg.

22 10
IDQ = 1500 mA VDD = 28 Vdc, f1 = 935 MHz, f2 = 945 MHz
INTERMODULATION DISTORTION (dBc)

TwoTone Measurements
21 1250 mA 20
Gps, POWER GAIN (dB)

IMD, THIRD ORDER

1000 mA
20 30 IDQ = 500 mA
750 mA
750 mA
19 40

500 mA
18 50 1000 mA 1250 mA
VDD = 28 Vdc, f1 = 935 MHz, f2 = 945 MHz 1500 mA
TwoTone Measurements
17 60
1 10 100 400 1 10 100 400
Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Figure 6. Third Order Intermodulation Distortion
Output Power versus Output Power

MRFE6S9135HR3 MRFE6S9135HSR3
RF Device Data
6 Freescale Semiconductor
 TYPICAL CHARACTERISTICS

10 0

IMD, INTERMODULATION DISTORTION (dBc)

IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1000 mA, f1 = 935 MHz VDD = 28 Vdc, Pout = 160 W (PEP)
20 f2 = 945 MHz, TwoTone Measurements 10 IDQ = 1000 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz

30 20

IM3U
40 3rd Order 30
IM3L IM5U
5th Order
50 40 IM5L

60 7th Order 50 IM7U

IM7L
70 60
1 10 100 400 1 10 100
Pout, OUTPUT POWER (WATTS) PEP TWOTONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products Figure 8. Intermodulation Distortion Products
versus Output Power versus Tone Spacing

1 55
SingleCarrier WCDMA, 3.84 MHz Channel Bandwidth
OUTPUT COMPRESSION AT THE 0.01%

Ideal
0 50

D, DRAIN EFFICIENCY (%)

PROBABILITY ON CCDF (dB)

1 45

1 dB = 38.71 W
2 40
2 dB = 54.21 W
3 35
3 dB = 85.92 W
Actual
4 30
VDD = 28 Vdc, IDQ = 1000 mA, f = 940 MHz
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
5 25
20 30 40 50 60 70 80 90 100
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power

23 70 22
30_C IDQ = 1000 mA
Gps TC = 30_C
22 25_C 60 f = 940 MHz
21
Gps, POWER GAIN (dB)

25_C
D, DRAIN EFFICIENCY (%)

21 85_C 50
Gps, POWER GAIN (dB)

20 85_C 40 20

19 30
19

18 20
VDD = 28 Vdc 18
17 D IDQ = 1000 mA 10 28 V
VDD = 24 V
f = 940 MHz 32 V
16 0 17
1 10 100 300 0 20 40 60 80 100 120 140 160 180 200 220 240
Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency Figure 11. Power Gain versus Output Power
versus CW Output Power

MRFE6S9135HR3 MRFE6S9135HSR3
RF Device Data
Freescale Semiconductor 7
 TYPICAL CHARACTERISTICS

108

107

MTTF (HOURS)
106

105
90 110 130 150 170 190 210 230 250
TJ, JUNCTION TEMPERATURE (C)

This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 39 W Avg., and D = 32.3%.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.

Figure 12. MTTF versus Junction Temperature

W - CDMA TEST SIGNAL

100 10
3.84 MHz
20 Channel BW
10
30
1
PROBABILITY (%)

40
Compressed Output Input Signal
Signal @ 39 W Pout 50
0.1
(dB)

60
0.01
WCDMA. ACPR Measured in 3.84 MHz 70
Channel Bandwidth @ 5 MHz Offset.
0.001 80
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF 90 ACPR in 3.84 MHz ACPR in 3.84 MHz
0.0001 Integrated BW Integrated BW
0 2 4 6 8 10 100
PEAKTOAVERAGE (dB)
110
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 9 7.2 5.4 3.6 1.8 0 1.8 3.6 5.4 7.2 9
64 DPCH, 50% Clipping, Single - Carrier Test Signal
f, FREQUENCY (MHz)
Figure 14. Single - Carrier W - CDMA Spectrum

MRFE6S9135HR3 MRFE6S9135HSR3
RF Device Data
8 Freescale Semiconductor
 f = 980 MHz
f = 820 MHz Zo = 10
Zload

Zsource
f = 820 MHz

f = 980 MHz

VDD = 28 Vdc, IDQ = 1000 mA, Pout = 39 W Avg.

f Zsource Zload
MHz W W
820 3.39 - j6.99 2.18 - j0.80
840 3.32 - j6.86 2.20 - j0.71
860 3.05 - j6.74 2.21 - j0.66
880 2.72 - j6.47 2.20 - j0.64
900 2.46 - j6.16 2.20 - j0.64
920 2.41 - j5.80 2.18 - j0.62
940 2.41 - j5.58 2.13 - j0.63
960 2.38 - j5.45 2.03 - j0.66
980 2.13 - j5.38 1.87 - j0.70
Zsource = Test circuit impedance as measured from
gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Input Device Output

Matching Under Matching
Network Test Network

Z Z
source load

Figure 15. Series Equivalent Source and Load Impedance

MRFE6S9135HR3 MRFE6S9135HSR3
RF Device Data
Freescale Semiconductor 9
 PACKAGE DIMENSIONS

B G NOTES:
1 2X Q 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M1994.
bbb M T A M B M
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
B FROM PACKAGE BODY.
(FLANGE) 4. DELETED
3
INCHES MILLIMETERS
K 2
DIM MIN MAX MIN MAX
A 1.335 1.345 33.91 34.16
B 0.535 0.545 13.6 13.8
D C 0.147 0.200 3.73 5.08
D 0.495 0.505 12.57 12.83
bbb M T A M B M
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
M (INSULATOR) R (LID)
G
H
1.100 BSC
0.057 0.067
27.94 BSC
1.45 1.70
K 0.170 0.210 4.32 5.33
bbb M T A M B M ccc M T A M B M
M 0.872 0.888 22.15 22.55
N (LID) S (INSULATOR)
N
Q
0.871
.118
0.889
.138
19.30
3.00
22.60
3.51
ccc M T A M B M R 0.515 0.525 13.10 13.30
aaa M T A M B M
S 0.515 0.525 13.10 13.30
H aaa 0.007 REF 0.178 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
C
STYLE 1:
F PIN 1. DRAIN
2. GATE
E T SEATING
3. SOURCE
PLANE
A A
(FLANGE)
CASE 465B - 03
ISSUE D
NI - 880
MRFE6S9135HR3

B NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
1 Y14.5M1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
B
(FLANGE) INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.905 0.915 22.99 23.24
K 2 B 0.535 0.545 13.60 13.80
C 0.147 0.200 3.73 5.08
D 0.495 0.505 12.57 12.83
D E 0.035 0.045 0.89 1.14
bbb M T A M B M F 0.003 0.006 0.08 0.15
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M (INSULATOR) R (LID) M 0.872 0.888 22.15 22.55
N 0.871 0.889 19.30 22.60
ccc M T A M B M R 0.515 0.525 13.10 13.30
bbb M T A M B M
S 0.515 0.525 13.10 13.30
N (LID) S (INSULATOR) aaa 0.007 REF 0.178 REF
bbb 0.010 REF 0.254 REF
ccc M T A M B M aaa M T A M B M ccc 0.015 REF 0.381 REF
H STYLE 1:
PIN 1. DRAIN
2. GATE
C 3. SOURCE

F
E T SEATING
PLANE
A A CASE 465C - 02
(FLANGE)
ISSUE D
NI - 880S
MRFE6S9135HSR3

MRFE6S9135HR3 MRFE6S9135HSR3
RF Device Data
10 Freescale Semiconductor
 PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Nov. 2007 Initial Release of Data Sheet

1 Nov. 2007 Updated Fig. 12, MTTF versus Junction Temperature, to reflect a 32.3% typical efficiency rating, p. 8

MRFE6S9135HR3 MRFE6S9135HSR3
RF Device Data
Freescale Semiconductor 11
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MRFE6S9135HR3 MRFE6S9135HSR3
Document Number: MRFE6S9135H RF Device Data
Rev. 1, 11/2007
12 Freescale Semiconductor