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Features A
A
Description K A A
TO-220AB
TS1220-xxxT
TN1215-xxxB X X 15 mA DPAK
TN1215-xxxG X X 15 mA D2PAK
TN1215-xxxH X X 15 mA IPAK
TS1220-xxxB X X 0.2 mA DPAK
TS1220-xxxH X 0.2 mA IPAK
TS1220-xxxT X 0.2 mA TO-220AB
TYNx12RG X X X 15 mA TO-220AB
TYNx12TRG X X X 5 mA TO-220AB
1 Characteristics
IDRM Tj = 25 C 5 A
VDRM = VRRM, RGK = 220 MAX.
IRRM Tj = 125 C 2 mA
MIN. 2 0.5 2
IGT mA
VD = 12 V RL = 33 MAX. 15 5 15
VGT MAX. 1.3 V
VGD VD = VDRM RL = 3.3 k Tj = 125 C MIN. 0.2 V
IH IT = 500 mA Gate open MAX. 40 30 15 30 mA
IL IG = 1.2 IGT MAX. 80 60 30 60 mA
dV/dt VD = 67 % VDRM Gate open Tj =125 C MIN. 200 40 200 V/s
VTM ITM = 24 A tp = 380 s Tj = 25 C MAX. 1.6 V
Vt0 Threshold voltage Tj = 125 C MAX. 0.85 V
Rd Dynamic resistance Tj = 125 C MAX. 30 m
IDRM Tj = 25 C 5 A
VDRM = VRRM MAX.
IRRM Tj = 125 C 2 mA
Figure 3. Average and D.C. on-state current Figure 4. Relative variation of thermal
versus ambient temperature impedance junction to case versus
(DPAK) pulse duration
IT(AV)(A) K=[Zth(j-c)/Rth(j-c)]
3.0
1.0
Device mounted on FR4 with
2.5 recommended pad layout
D.C.
1.5
= 180
DPAK
1.0
0.2
0.5
Tamb(C) tp(s)
0.0 0.1
0 25 50 75 100 125 1E-3 1E-2 1E-1 1E+0
D2PAK
1.2
0.10 TO-220AB / IPAK 1.0
IH & IL
0.8 RGK = 1k
0.6
0.4
0.2
tp(s) Tj(C)
0.01 0.0
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 -40 -20 0 20 40 60 80 100 120 140
0.6 1.5
0.4 1.0
0.2 Tj(C) 0.5
0.0 RGK(k)
-40 -20 0 20 40 60 80 100 120 140 0.0
1E-2 1E-1 1E+0 1E+1
Figure 9. Relative variation of dV/dt immunity Figure 10. Relative variation of dV/dt immunity
versus gate-cathode resistance versus gate-cathode capacitance
(typical values) for TS12 series (typical values) for TS12 series
dV/dt[RGK] / dV/dt[RGK=220] dV/dt[CGK] / dV/dt[RGK=220]
10.0 4.0
Tj = 125C VD = 0.67 x VDRM
VD = 0.67 x VDRM Tj = 125C
3.5 RGK = 220
3.0
2.5
1.0 2.0
1.5
1.0
0.5
RGK(k) CGK(nF)
0.1 0.0
0 200 400 600 800 1000 1200 0 25 50 75 100 125 150
Figure 11. Surge peak on-state current versus Figure 12. Non-repetitive surge peak on-state
number of cycles current and corresponding values
of It versus sinusoidal pulse width
Figure 13. On-state characteristics (maximum Figure 14. Thermal resistance junction to
values) ambient versus copper surface
under tab (DPAK and D2PAK)
ITM(A) Rth(j-a)(C/W)
200 100
Tj max.: Epoxy printed circuit board FR4
100 Vt0=0.85V
Rd=30m
copper thickness = 35 m
80
60
Tj=max
DPAK
10
Tj=25C 40
D2PAK
20
VTM(V) S(cm)
1 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 2 4 6 8 10 12 14 16 18 20
TS 12 20 - 600 B (-TR)
TYN 6 12 T RG
3 Package information
I b2
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
L
F
b1 0.61 0.88 0.024 0.034
A b2 1.23 1.32 0.048 0.051
I4
C 4.40 4.60 0.173 0.181
l3
c2
c1 0.49 0.70 0.019 0.027
a1
c2 2.40 2.72 0.094 0.107
l2
a2
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
M
b1 c1 I 3.75 3.85 0.147 0.151
e
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102
L4
H2 10 10.40 0.393 0.409
F L2 16.4 typ. 0.645 typ.
M L4 13 14 0.511 0.551
G1 E
L5 2.65 2.95 0.104 0.116
G
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
A
B 0.64 0.90 0.025 0.035
E
C2
B2 5.20 5.40 0.204 0.212
B2
L2 B3 0.95 0.037
B5 0.30 0.035
D C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.019 0.023
H B3
L1
L
B A1
D 6 6.20 0.236 0.244
V1 E 6.40 6.60 0.252 0.260
e 2.28 0.090
e B5 C
6.7 3 3 1.6
2.3
6.7
2.3
1.6
16.90
10.30 5.08
1.30
3.70
8.90
4 Ordering information
5 Revision history
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